D Series Power MOSFET
|
|
- Scot Joshua West
- 5 years ago
- Views:
Transcription
1 D Series Power MOSFET SiHGN5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V. Q g (Max.) (nc) 58 Q gs (nc) 8 Q gd (nc) Configuration Single TO27C S G D ORDERING INFORMTION Package Lead (Pb)free Lead (Pb)free and Halogenfree G D S NChannel MOSFET FETURES Optimal Design Low rea Specific OnResistance Low Input Capacitance (C iss ) Reduced Capacitive Switching Losses High Body Diode Ruggedness valanche Energy Rated (UIS) Optimal Efficiency and Operation Low Cost Simple Gate Drive Circuitry Low FigureofMerit (FOM): R on x Q g Fast Switching Material categorization: For definitions of compliance please see Note * Lead (Pb)containing terminations are not RoHScompliant. Exemptions may apply. PPLICTIONS Consumer Electronics Displays (LCD or Plasma TV) Server and Telecom Power Supplies SMPS Industrial Welding, Induction Heating, Motor Drives Battery Chargers TO27C SiHGN5DE3 SiHGN5DGE3 BSOLUTE MXIMUM RTINGS (T C = 25 C, unless otherwise noted) PRMETER SYMBOL LIMIT UNIT DrainSource Voltage 5 GateSource Voltage ± 3 V V GS GateSource Voltage C (f > Hz) 3 Continuous Drain Current (T J = 5 C) V GS at V T C = 25 C I D T C = C 9 Pulsed Drain Current a I DM 38 Linear Derating Factor.6 W/ C Single Pulse valanche Energy b E S 56 mj Maximum Power Dissipation P D 28 W Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C DrainSource Voltage Slope T J = 25 C 2 dv/dt Reverse Diode dv/dt d. V/ns Soldering Recommendations (Peak Temperature) for s 3 c C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. V DD = 5 V, starting T J = 25 C, L = 2.3 mh, R g = 25, I S = 7. c..6 mm from case. d. I SD I D, starting T J = 25 C. S2229Rev., 2May2 Document Number: 953
2 SiHGN5D THERML RESISTNCE RTINGS PRMETER SYMBOL TYP. MX. UNIT Maximum Junctiontombient R thj 62 Maximum JunctiontoCase (Drain) R thjc.6 C/W SPECIFICTIONS (T J = 25 C, unless otherwise noted) PRMETER SYMBOL TEST CONDITIONS MIN. TYP. MX. UNIT Static DrainSource Breakdown Voltage V GS = V, I D = 25 μ 5 V Temperature Coefficient /T J Reference to 25 C, I D = 25 μ.58 V/ C GateSource Threshold Voltage (N) V GS(th) = V GS, I D = 25 μ V GateSource Leakage I GSS V GS = ± 3 V ± n = 5 V, V GS = V Zero Gate Voltage Drain Current I DSS = V, V GS = V, T J = 25 C μ DrainSource OnState Resistance R DS(on) V GS = V I D = Forward Transconductance a g fs = 5 V, I D = S Dynamic Input Capacitance C iss V GS = V, Output Capacitance C oss = V, Reverse Transfer Capacitance C rss f = MHz 2 Effective Output Capacitance, Energy pf related a C o(er) 87 V GS = V, = V to V Effective Output Capacitance, Time related b C o(tr) 25 Total Gate Charge Q g GateSource Charge Q gs V GS = V I D = 7, = V 8 nc GateDrain Charge Q gd TurnOn Delay Time t d(on) 6 32 Rise Time t r V DD = V, I D = TurnOff Delay Time t d(off) R g = 9., V GS = V ns Fall Time t f Gate Input Resistance R g f = MHz, open drain.7 DrainSource Body Diode Characteristics MOSFET symbol D Continuous SourceDrain Diode Current I S showing the G integral reverse Pulsed Diode Forward Current I SM S 56 p n junction diode Diode Forward Voltage V SD T J = 25 C, I S = 7, V GS = V.2 V Reverse Recovery Time t rr 39 ns T J = 25 C, I F = I S = 7, Reverse Recovery Charge Q rr 3. μc di/dt = /μs, V R = 2 V Reverse Recovery Current I RRM 8 Note a. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 % S. b. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while is rising from % to 8 % S. S2229Rev., 2May2 2 Document Number: 953
3 SiHGN5D TYPICL CHRCTERISTICS (25 C, unless otherwise noted) I D, DraintoSource Current () 3 2 TOP 5 V V 3 V 2 V V V 9. V 8. V 7. V 6. V T J = 25 C R DS(on), DraintoSource On Resistance (Normalized) I D = 7 V GS = V 5. V , DraintoSource Voltage (V) Fig. Typical Output Characteristics T J, Junction Temperature ( C) Fig. Normalized OnResistance vs. Temperature I D, DraintoSource Current () TOP 5 V V 3 V 2 V V V 9. V 8. V 7. V 6. V BOTYTOM 5. V T J = 5 C 5. V , DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics Capacitance (pf) C oss C rss C iss, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage V GS = V, f = MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd I D, DraintoSource Current () 3 2 T J = 5 C T J = 25 C V GS, GatetoSource Voltage (V) = V = 25 V = V V GS, GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics Q g, Total Gate Charge (nc) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage S2229Rev., 2May2 3 Document Number: 953
4 SiHGN5D I SD, Reverse Drain Current () T J = 5 C T J = 25 C V GS = V I D, Drain Current () V SD, SourceDrain Voltage (V) Fig. 7 Typical SourceDrain Diode Forward Voltage T J, Case Temperature ( C) Fig. 9 Maximum Drain Current vs. Case Temperature 625 I D, Drain Current () Operation in this rea Limited by R DS(on) Limited by R DS(on) * I DM = Limited μs ms T C = 25 C ms T J = 5 C Single Pulse BVDSS Limited., DraintoSource Voltage (V) * V GS > minimum V GS at which R DS(on) is s, DraintoSource Brakdown Voltage (V) T J, Junction Temperature ( C) Fig. 8 Maximum Safe Operating rea Fig. Typical DraintoSource Voltage vs. Temperature Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse..... Pulse Time (s) Fig. Normalized Thermal Transient Impedance, JunctiontoCase S2229Rev., 2May2 Document Number: 953
5 SiHGN5D R D t p V GS D.U.T. V DD R G V DD V Pulse width μs Duty factor. % I S Fig. 2 Switching Time Test Circuit Fig. 5 Unclamped Inductive Waveforms 9 % V Q G Q GS Q GD % V GS t d(on) t r t d(off) t f V G Charge Fig. 3 Switching Time Waveforms Fig. 6 Basic Gate Charge Waveform Vary t p to obtain required I S L Current regulator Same type as D.U.T. 5 kω R G V t p I S D.U.T.. Ω V DD 2 V V GS.2 μf.3 μf D.U.T. V DS 3 m Fig. Unclamped Inductive Test Circuit I G I D Current sampling resistors Fig. 7 Gate Charge Test Circuit S2229Rev., 2May2 5 Document Number: 953
6 SiHGN5D Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V GS = V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 8 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S2229Rev., 2May2 6 Document Number: 953
7 TO27C (High Voltage) Package Information 3 B R/2 Q E E/2 S 2 7 ØP (Datum B) Ø k M D B M ØP D2 2 x R (2) D D 2 3 D Thermal pad 5 L C 2 x b2 3 x b. M C M b Lead ssignments. Gate 2. Drain 3. Source. Drain 2 x e L See view B C DDE (b, b2, b) () Section C C, D D, E E MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX D E E b e 5.6 BSC.25 BSC b Ø k.25. b L b L b N 7.62 BSC.3 BSC b Ø P c Ø P c Q D R D S 5.5 BSC.27 BSC ECN: X33Rev. D, Jul3 DWG: 597 Notes. Dimensioning and tolerancing per SME Y.5M Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed.27 mm (.5") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions D and E. 5. Lead finish uncontrolled in L. 6. Ø P to have a maximum draft angle of.5 to the top of the part with a maximum hole diameter of 3.9 mm (.5"). 7. Outline conforms to JEDEC outline TO27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E. M D B M View (b, b3, b5) Base metal c Revision: Jul3 Document Number: 936
8 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 8Feb7 Document Number: 9
9 Mouser Electronics uthorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SIHGN5DE3 SIHGN5DGE3
D Series Power MOSFET
D Series Power MOSFET SiHG22N5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.23 Q g max. (nc) 98 Q gs (nc) 3 Q gd (nc) 22 Configuration Single TO27C D FETURES Optimal Design Low
More informationD Series Power MOSFET
D Series Power MOSFET SiHG32N5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.5 Q g max. (nc) 96 Q gs (nc) 8 Q gd (nc) 29 Configuration Single TO27C S G D ORDERING INFORMTION Package
More informationPower MOSFET FEATURES. PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V DS 500 V Gate-source voltage V GS ± 30
Power MOSFET TO27C S G D NChannel MOSFET PRODUCT SUMMRY (V) at T J max. 56 R DS(on) () = V.27 Q g max. (nc) 76 Q gs (nc) 2 Q gd (nc) 3 Configuration Single G D S FETURES Low figureofmerit R on x Q g %
More informationD Series Power MOSFET
D Series Power MOSFET IRFP6B, SiHG6B PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C () V GS = V.25 Q g max. (nc) 7 Q gs (nc) Q gd (nc) 28 Configuration Single TO27C S G D ORDERING INFORMTION Package
More informationD Series Power MOSFET
D Series Power MOSFET SiHG25ND PRODUCT SUMMRY (V) at T J max. 5 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO27C S G D ORDERING INFORMTION Package
More informationD Series Power MOSFET
D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.3 Q g max. (nc) 25 Q gs (nc) 23 Q gd (nc) 37 Configuration Single Super247 S D G ORDERING INFORMATION Package
More informationD Series Power MOSFET
D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.85 Q g (max.) (nc) 3 Q gs (nc) 4 Q gd (nc) 7 Configuration Single TO22AB D G FEATURES Optimal Design Low Area
More informationE Series Power MOSFET
E Series Power MOSFET SiHG73N6E PRODUCT SUMMRY (V) at T J max. 65 R DS(on) max. at 25 C (Ω) V GS = V.39 Q g max. (nc) 362 Q gs (nc) 8 Q gd (nc) 98 Configuration Single TO27C S G D ORDERING INFORMTION Package
More informationD Series Power MOSFET
D Series Power MOSFET SiHP6N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C () V GS = V. Q g max. (nc) 8 Q gs (nc) 3 Q gd (nc) 4 Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING
More informationD Series Power MOSFET
D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V 3.2 Q g max. (nc) 2 Q gs (nc) 2 Q gd (nc) 3 Configuration Single DPAK (TO252) D G ORDERING INFORMATION
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHG7N6EF PRODUCT SUMMRY (V) at T J max. 65 R DS(on) typ. at 25 C () V GS = 1 V.33 Q g (Max.) (nc) 38 Q gs (nc) 62 Q gd (nc) 12 Configuration Single TO27C S
More informationD Series Power MOSFET
D Series Power MOSFET TO22 FULLPAK D G S G D S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.28 Q g max. (nc) 76 Q gs (nc) Q gd (nc) 7 Configuration Single ORDERING
More informationD Series Power MOSFET
D Series Power MOSFET IRF8B PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) Q gd (nc) 5 Configuration Single D TO22AB FEATURES Optimal design Low area specific
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHG7N6EF PRODUCT SUMMRY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = 1 V.65 Q g max. (nc) 228 Q gs (nc) 32 Q gd (nc) 62 Configuration Single TO27C S G
More informationD Series Power MOSFET
D Series Power MOSFET SiHG32N5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.5 Q g max. (nc) 96 Q gs (nc) 8 Q gd (nc) 29 Configuration Single TO247C S G D ORDERING INFORMTION Package
More informationD Series Power MOSFET
D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
More informationE Series Power MOSFET
E Series Power MOSFET SiHPN8E D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 85 R DS(on) typ. (Ω) at 25 C V GS = V.8 Q g max. (nc) 88 Q gs (nc) 9 Q gd (nc) 6 Configuration Single FEATURES
More informationEF Series Power MOSFET With Fast Body Diode
EF Series Power MOSFET With Fast Body Diode SiHG8N6EF TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.28 Q g max. (nc) 4 Q gs (nc) 43 Q gd (nc) 43 Configuration
More informationEL Series Power MOSFET
EL Series Power MOSFET SiHA3N6AEL ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) 4 Q gd (nc) 9 Configuration
More informationD Series Power MOSFET
D Series Power MOSFET SiHPND PRODUCT SUMMARY (V) at T J max. 5 R DS(on) max. at 25 C () = V. Q g max. (nc) 8 Q gs (nc) 3 Q gd (nc) Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING INFORMATION
More informationE Series Power MOSFET
E Series Power MOSFET SiHP33N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. () at 25 C V GS = V.99 Q g max. (nc) 5 Q gs (nc) 24 Q gd (nc) 42 Configuration Single D TO22AB G G DS S NChannel MOSFET
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHP2N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.76 Q g (Max.) (nc) 84 Q gs (nc) 4 Q gd (nc) 24 Configuration Single D TO22AB G
More informationD Series Power MOSFET
D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C () V GS = V.4 Q g max. (nc) 58 Q gs (nc) 8 Q gd (nc) 4 Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING INFORMATION
More informationEL Series Power MOSFET
EL Series Power MOSFET SiHP22N6EL PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C (Ω) V GS = V.7 Q g max. (nc) 74 Q gs (nc) 5 Q gd (nc) 5 Configuration Single FEATURES Reduced figureofmerit (FOM)
More informationE Series Power MOSFET
E Series Power MOSFET SiHG8N6E TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.26 Q g max. (nc) 443 Q gs (nc) 85 Q gd (nc) 39 Configuration Single G
More informationE Series Power MOSFET
E Series Power MOSFET SiHDN8E DPAK (TO5) D PRODUCT SUMMARY G S NChannel MOSFET (V) at T J max. 85 R DS(on) typ. (Ω) at 5 C V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 8 Configuration Single G D S FEATURES
More informationE Series Power MOSFET
E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 7 R DS(on) max. at 25 C (Ω) V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 32 Configuration Single TO22 FULLPAK D G G D S S NChannel MOSFET ORDERING
More informationE Series Power MOSFET
E Series Power MOSFET SiHP35N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. () at 25 C V GS = V.82 Q g max. (nc) 32 Q gs (nc) 22 Q gd (nc) 46 Configuration Single D TO22AB G G DS S NChannel MOSFET
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHP33N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.98 Q g (Max.) (nc) 55 Q gs (nc) 22 Q gd (nc) 43 Configuration Single D TO22AB
More informationD Series Power MOSFET
D Series Power MOSFET SiHUND PRODUCT SUMMRY (V) at T J max. R DS(on) max. ( ) at 2 C V GS = V.2 Q g (max.) (nc) 2 Q gs (nc) Q gd (nc) Configuration Single D IPK (TO2) G D S G D S NChannel MOSFET FETURES
More informationEF Series Power MOSFET with Fast Body Diode
EF Series Power MOSFET with Fast Body Diode SiHA21N6EF ThinLead TO22 FULLPAK PRODUCT SUMMARY S D G NChannel MOSFET (V) at T J max. 65 R DS(on) max. () at 25 C V GS = 1 V.176 Q g max. (nc) 84 Q gs (nc)
More informationEF Series Power MOSFET With Fast Body Diode
EF Series Power MOSFET With Fast Body Diode SiHP38N6EF D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.6 Q g max. (nc) 89 Q gs (nc) 26 Q gd (nc)
More informationE Series Power MOSFET
E Series Power MOSFET SiHS9N65E PRODUCT SUMMARY (V) at T J max. 7 R DS(on) () typ. at 25 C V GS = V.25 Q g (nc) max. 59 Q gs (nc) 84 Q gd (nc) 6 Configuration Single FEATURES Low figureofmerit (FOM) R
More informationE Series Power MOSFET
E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C ( ) V GS =.56 Q g max. (nc) 82 Q gs (nc) 29 Q gd (nc) 62 Configuration Single FEATURES Low figureofmerit (FOM) R on x Q g
More informationE Series Power MOSFET
E Series Power MOSFET SiHD2N5E PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C (Ω) V GS = V.38 Q g max. (nc) 5 Q gs (nc) 6 Q gd (nc) Configuration Single FEATURES Low figureofmerit (FOM) R on
More informationD Series Power MOSFET
D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C () V GS = V.28 Q g (max.) (nc) 76 Q gs (nc) Q gd (nc) 7 Configuration Single D TO22 FULLPAK G FEATURES Optimal Design Low
More informationEF Series Power MOSFET With Fast Body Diode
EF Series Power MOSFET With Fast Body Diode SiHF35N6EF TO22 FULLPAK D FEATURES A specific on resistance (m cm 2 ) reduction of 25 % G D S G S NChannel MOSFET Low figureofmerit (FOM) R on x Q g Low input
More informationPower MOSFET FEATURES. IRFP22N50APbF SiHFP22N50A-E3 IRFP22N50A SiHFP22N50A
Power MOSFET IRFP22N50, SiHFP22N50 PRODUCT SUMMRY (V) 500 R DS(on) ( ) V GS = 10 V 0.23 Q g (Max.) (nc) 120 Q gs (nc) 32 Q gd (nc) 52 Configuration Single D TO-27C G FETURES Low Gate Charge Q g Results
More informationE Series Power MOSFET with Fast Body Diode
E Series Power MOSFET with Fast Body Diode ThinLead TO22 FULLPAK S D G PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 7 R DS(on) max. () at 25 C V GS = V.8 Q g max. (nc) 6 Q gs (nc) 4 Q gd (nc) 33 Configuration
More informationD Series Power MOSFET
D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
More informationE Series Power MOSFET
E Series Power MOSFET SiHA2N5E PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C (Ω) V GS = V.84 Q g max. (nc) 92 Q gs (nc) Q gd (nc) 9 Configuration Single FEATURES Low figureofmerit (FOM) R on
More informationS Series Power MOSFET
S Series Power MOSFET PRODUCT SUMMARY at T J max. (V) 65 R DS(on) max. at 25 C (Ω) = V.9 Q g max. (nc) 98 Q gs (nc) 7 Q gd (nc) 25 Configuration Single D D 2 PAK (TO263) FEATURES Generation one High E
More informationPower MOSFET FEATURES. IRFP240PbF SiHFP240-E3 IRFP240 SiHFP240
Power MOSFET PRODUCT SUMMRY V DS (V) 200 R DS(on) ( ) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO-247C S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb G
More informationPower MOSFET. IRFP450APbF SiHFP450A-E3 IRFP450A SiHFP450A
IRFP450, SiHFP450 Power MOSFET PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 64 Q gs (nc) 16 Q gd (nc) 26 Configuration Single D FETURES Low Gate Charge Q g Results in Simple
More informationPower MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A
IRFP60, SiHFP60 Power MOSFET PRODUCT SUMMRY (V) 500 R DS(on) (Ω) = 0 V 0.27 Q g (Max.) (nc) 05 Q gs (nc) 26 Q gd (nc) 2 Configuration Single TO-27 S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb
More informationN-Channel 200 V (D-S) 175 C MOSFET
N-Channel 2 V (D-S) 175 C MOSFET SUG99E TO-27 S D Top View G PRODUCT SUMMRY V DS (V) 2 R DS(on) max. (Ω) at V GS = V.95 R DS(on) max. (Ω) at V GS = 7.5 V. Q g typ. (nc) 86 I D () d Configuration Single
More informationPower MOSFET. IRFIB7N50APbF SiHFIB7N50A-E3 IRFIB7N50A SiHFIB7N50A T C = 25 C
Power MOSFET IRFIB7N50, SiHFIB7N50 PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 0 V 0.52 Q g (Max.) (nc) 52 Q gs (nc) 3 Q gd (nc) 8 Configuration Single FETURES Low Gate Charge Q g Results in Simple
More informationD Series Power MOSFET
D Series Power MOSFET SiHPN4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.6 Q g max. (nc) 3 Q gs (nc) 4 Q gd (nc) 7 Configuration Single TO22AB G DS ORDERING INFORMATION Package
More informationPower MOSFET FEATURES. Super-247 IRFPS43N50KPbF SiHFPS43N50K-E3 IRFPS43N50K SiHFPS43N50K
Power MOSFET IRFPS43N50K, SiHFPS43N50K PRODUCT SUMMRY V DS (V) 500 R DS(on) ( ) V GS = V 0.078 Q g (Max.) (nc) 350 Q gs (nc) 85 Q gd (nc) 80 Configuration Single FETURES Low Gate Charge Q g Results in
More informationPower MOSFET FEATURES DESCRIPTION. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ± 20 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.10 Q g max. (nc) 25 Q gs (nc) 5.8 Q gd (nc) 11 Configuration Single D FEATURES Dynamic dv/dt rating 175 C operating temperature Fast switching
More informationPower MOSFET. IRFBC40LCPbF SiHFBC40LC-E3 IRFBC40LC SiHFBC40LC
Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) () = 10 V 1. Q g max. (nc) 39 Q gs (nc) 10 Q gd (nc) 19 Configuration Single D TO0AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET FEATURES. IRFBF30SPbF SiHFBF30S-E3. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 900 V Gate-Source Voltage V GS ± 20 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 900 R DS(on) ( ) V GS = 10 V 3.7 Q g (Max.) (nc) 78 Q gs (nc) 10 Q gd (nc) 42 Configuration Single D D 2 PAK (TO263) G G D S ORDERING INFORMATION Package Lead (Pb)free
More informationPower MOSFET. IRFBG20PbF SiHFBG20-E3 IRFBG20 SiHFBG20. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 1000 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) () V GS = 10 V 11 Q g max. (nc) 38 Q gs (nc) 4.9 Q gd (nc) 22 Configuration Single D TO220AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
More informationE Series Power MOSFET
E Series Power MOSFET SiHF22N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C (Ω) V GS = V.8 Q g max. (nc) 86 Q gs (nc) Q gd (nc) 24 Configuration Single D TO22 FULLPAK G S G D NChannel MOSFET
More informationPower MOSFET DESCRIPTION. IRFD9220PbF SiHFD9220-E3 IRFD9220 SiHFD9220
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) V GS = 10 V 1.5 Q g (Max.) (nc) 15 Q gs (nc) 3.2 Q gd (nc) 8.4 Configuration Single S HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated
More informationPower MOSFET. P-channel Fast switching. IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) max. () = 10 V 0.80 Q g max. (nc) 9 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single S TO0AB G G DS D PChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
More informationPower MOSFET FEATURES. Full Bridge PFC Boost. IRFP460APbF SiHFP460A-E3 IRFP460A SiHFP460A
IRFP460, SiHFP460 Power MOSFET PRODUCT SUMMRY (V) 500 R DS(on) (Ω) = 0 V 0.27 Q g (Max.) (nc) 05 Q gs (nc) 26 Q gd (nc) 42 Configuration Single TO-247 S G D ORDERING INFORMTION Package Lead (Pb)-free SnPb
More informationPower MOSFET. IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) () V GS = 10 V 0.55 Q g max. (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single D TO220 FULLPAK G S G D S NChannel MOSFET ORDERING INFORMATION Package
More informationPower MOSFET. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640
Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) () = 10 V 0.50 Q g max. (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single S TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche
More informationD Series Power MOSFET
D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. ( ) at 25 C V GS = V 3.2 Q g (max.) (nc) 2 Q gs (nc) 3 Q gd (nc) 5 Configuration Single DPAK (TO252) D G S G D S NChannel
More informationPower MOSFET FEATURES APPLICATIONS. IRFS9N60APbF IRFS9N60ATRRPbF a IRFS9N60ATRLPbF a SiHFS9N60A-E3 SiHFS9N60ATR-E3 a SiHFS9N60ATL-E3 a
Power MOSFET IRFS9N60, SiHFS9N60 PRODUCT SUMMRY V DS (V) 600 R DS(on) () V GS = 0 V 0.75 Q g max. (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single D D 2 PK (TO-263) G FETURES Low gate charge Q g results
More informationPower MOSFET FEATURES. IRL520PbF SiHL520-E3 IRL520 SiHL520
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
More informationPower MOSFET FEATURES. IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L
Power MOSFET IRFB7N50L, SiHFB7N50L PRODUCT SUMMARY V DS (V) 500 R DS(on) ( ) V GS = 0 V 0.28 Q g (Max.) (nc) 30 Q gs (nc) 33 Q gd (nc) 59 Configuration Single TO220AB G DS ORDERING INFORMATION Package
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES DESCRIPTION. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ± 20 T A = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.28 Q g max. (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET FEATURES Dynamic dv/dt rating Repetitive
More informationPower MOSFET FEATURES. IRF820PbF SiHF820-E3 IRF820 SiHF820. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 3.0 Q g (Max.) (nc) 4 Q gs (nc) 3.3 Q gd (nc) 13 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationE Series Power MOSFET
E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C ( ) = V.25 Q g max. (nc) 3 Q gs (nc) 5 Q gd (nc) 39 Configuration Single FEATURES Low FigureofMerit (FOM) R on x Q g Low Input
More informationPower MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A
Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
More informationPower MOSFET FEATURES. IRFB20N50KPbF SiHFB20N50K-E3 IRFB20N50K SiHFB20N50K
Power MOSFET IRFB20N50K, SiHFB20N50K PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 0 V 0.2 Q g (Max.) (nc) 0 Q gs (nc) 33 Q gd (nc) 54 Configuration Single D TO-220 G G DS S FETURES Low Gate Charge Q
More informationPower MOSFET FEATURES. Motor Drive. IRFPS40N60KPbF SiHFPS40N60K-E3 IRFPS40N60K SiHFPS40N60K T C = 25 C
Power MOSFET PRODUCT SUMMRY (V) 600 R DS(on) ( ) V GS = V 0. Q g (Max.) (nc) 330 Q gs (nc) 84 Q gd (nc) 50 Configuration Single D FETURES Low Gate Charge Q g Results in Simple Drive Requirement Improved
More informationPower MOSFET FEATURES. IRF9510PbF SiHF9510-E3 IRF9510 SiHF9510
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
More informationE Series Power MOSFET with Fast Body Diode
E Series Power MOSFET with Fast Body Diode PRODUCT SUMMARY (V) at T J max. 7 R DS(on) max. at 25 C () V GS = V.56 Q g max. (nc) 22 Q gs (nc) 7 Q gd (nc) 36 Configuration Single TO22AB G DS ORDERING INFORMATION
More informationPower MOSFET. IRFI830GPbF SiHFI830G-E3 IRFI830G SiHFI830G T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 1.5 Q g (Max.) (nc) 38 Q gs (nc) 5.0 Q gd (nc) 22 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET T C = 25 C
Power MOSFET PRODUCT SUMMRY V DS (V) 200 R DS(on) () = 10 V 0.18 Q g max. (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single D I 2 PK (TO262) G D S D 2 PK (TO263) G G D S S NChannel MOSFET FETURES
More informationPower MOSFET FEATURES. IRLD120PbF SiHLD120-E3 IRLD120 SiHLD120
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
More informationPower MOSFET. IRFD9024PbF SiHFD9024-E3 IRFD9024 SiHFD9024
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.28 Q g (Max.) (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES. IRLD014PbF SiHLD014-E3 IRLD014 SiHLD014
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 5 V 0.20 Q g (Max.) (nc) 8.4 Q gs (nc) 2.6 Q gd (nc) 6.4 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating For Automatic Insertion End Stackable
More informationPower MOSFET FEATURES. IRF9Z34PbF SiHF9Z34-E3 IRF9Z34 SiHF9Z34
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) = 10 V 0.14 Q g (Max.) (nc) 34 Q gs (nc) 9.9 Q gd (nc) 16 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationPower MOSFET FEATURES. IRFP27N60KPbF SiHFP27N60K-E3 IRFP27N60K SiHFP27N60K
Power MOSFET IRFP27N60K, SiHFP27N60K PRODUCT SUMMRY V DS (V) 600 R DS(on) ( ) V GS = V 8 Q g (Max.) (nc) 80 Q gs (nc) 56 Q gd (nc) 86 Configuration Single TO-27C S G D ORDERING INFORMTION Package Lead
More informationPower MOSFET FEATURES. IRFP23N50LPbF SiHFP23N50L-E3 IRFP23N50L SiHFP23N50L
Power MOSFET IRFP23N50L, SiHFP23N50L PRODUCT SUMMRY V DS (V) 500 R DS(on) ( ) V GS = V 0.90 Q g (Max.) (nc) 50 Q gs (nc) Q gd (nc) 72 Configuration Single TO-27C S G D ORDERING INFORMTION Package Lead
More informationPower MOSFET FEATURES. IRF9610PbF SiHF9610-E3 IRF9610 SiHF9610
IRF961, SiHF961 Power MOSFET PRODUCT SUMMARY (V) R DS(on) (Ω) = 1 V 3. Q g (Max.) (nc) 11 Q gs (nc) 7. Q gd (nc) 4. Configuration Single TO G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES. IRF710PbF SiHF710-E3 IRF710 SiHF710. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) ( ) = 3.6 Q g (Max.) (nc) 17 Q gs (nc) 3.4 Q gd (nc) 8.5 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
More informationPower MOSFET. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL110-GE3 SiHFL110TR-GE3 a Lead (Pb)-free T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D SOT223 G D S G D S NChannel MOSFET FEATURES Halogenfree According
More informationPower MOSFET. 50 I D T C = 100 C 50 Pulsed Drain Current a, e I DM 290 Linear Derating Factor 1.3 W/ C Single Pulse Avalanche Energy b, e E AS 100 mj
Power MOSFET PRODUCT SUMMRY V DS (V) 60 R DS(on) () V GS = 10 V 0.018 Q g (Max.) (nc) 110 Q gs (nc) 29 Q gd (nc) 36 Configuration Single D I 2 PK (TO-262) D 2 PK (TO-263) FETURES dvanced process technology
More informationPower MOSFET FEATURES. IRFPG40PbF SiHFPG40-E3 IRFPG40 SiHFPG40
Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) (Ω) V GS = 10 V 3.5 Q g (Max.) (nc) 120 Q gs (nc) 16 Q gd (nc) 65 Configuration Single TO247AC S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
More informationPower MOSFET FEATURES. IRFB18N50KPbF SiHFB18N50K-E3 IRFB18N50K SiHFB18N50K
Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.26 Q g (Max.) (nc) 20 Q gs (nc) 34 Q gd (nc) 54 Configuration Single D TO220 G G DS S NChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES. IRF530PbF SiHF530-E3 IRF530 SiHF530. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.16 Q g (Max.) (nc) 6 Q gs (nc) 5.5 Q gd (nc) 11 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510
Power MOSFET IRF510, SiHF510 PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt rating Repetitive avalanche rated 175 C
More informationPower MOSFET. IRFI9634GPbF SiHFI9634G-E3 IRFI9634G SiHFI9634G T C = 25 C. V GS at - 10 V
Power MOSFET PRODUCT SUMMARY (V) 250 R DS(on) (Ω) V GS = 10 V 1.0 Q g (Max.) (nc) 38 Q gs (nc) 8.0 Q gd (nc) 18 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET. IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 0.55 Q g (Max.) (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET. IRFD9110PbF SiHFD9110-E3 IRFD9110 SiHFD9110
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration HVMDIP S G Single S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES. IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Max.) (Ω) = 0.80 Q g (Max.) (nc) 29 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationPower MOSFET FEATURES. IRFZ14PbF SiHFZ14-E3 IRFZ14 SiHFZ14
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES DESCRIPTION. IRFD320PbF SiHFD320-E3 IRFD320 SiHFD320 T A = 25 C
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 1.8 Q g (Max.) (nc) 20 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single D HVMDIP FEATURES Dynamic dv/dt rating Repetitive avalanche rated For
More informationPower MOSFET FEATURES. IRF630PbF SiHF630-E3 IRF630 SiHF630. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 23 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
More informationPower MOSFET FEATURES. IRLD110PbF SiHLD110-E3 IRLD110 SiHLD110
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G S G D S NChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES DESCRIPTION. IRLD110PbF SiHLD110-E3 IRLD110 SiHLD110 T A = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
More information