D Series Power MOSFET
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- Ashlie Morris
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1 D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.85 Q g (max.) (nc) 3 Q gs (nc) 4 Q gd (nc) 7 Configuration Single TO22AB D G FEATURES Optimal Design Low Area Specific OnResistance Low Input Capacitance (C iss ) Reduced Capacitive Switching Losses High Body Diode Ruggedness Avalanche Energy Rated (UIS) Optimal Efficiency and Operation Low Cost Simple Gate Drive Circuitry Low FigureofMerit (FOM): R on x Q g Fast Switching Material categorization: For definitions of compliance please see Note * Lead (Pb)containing terminations are not RoHScompliant. Exemptions may apply. G DS ORDERING INFORMATION Package Lead (Pb)free S NChannel MOSFET APPLICATIONS Consumer Electronics Displays (LCD or Plasma TV) Server and Telecom Power Supplies SMPS Industrial Welding Induction Heating Motor Drives Battery Chargers TO22AB PbF ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 5 GateSource Voltage ± 3 V V GS GateSource Voltage AC (f > Hz) 3 Continuous Drain Current (T J = 5 C) V GS at V T C = 25 C 8.7 I D T C = C 5.5 A Pulsed Drain Current a I DM 8 Linear Derating Factor.25 W/ C Single Pulse Avalanche Energy b E AS 29 mj Maximum Power Dissipation P D 56 W Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C DrainSource Voltage Slope T J = 25 C 24 dv/dt Reverse Diode dv/dt d.37 V/ns Soldering Recommendations (Peak Temperature) c for s 3 C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. V DD = 5 V, starting T J = 25 C, L = 2.3 mh, R g = 25, I AS = 5 A. c..6 mm from case. d. I SD I D, starting T J = 25 C. S2375Rev. A, 8Jun2 Document Number: 952
2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 Maximum JunctiontoCase (Drain) R thjc.8 C/W SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage V GS = V, I D = 25 μa 5 V Temperature Coefficient /T J Reference to 25 C, I D = 25 μa.58 V/ C GateSource Threshold Voltage (N) V GS(th) = V GS, I D = 25 μa 3 5 V GateSource Leakage I GSS V GS = ± 3 V ± na = 5 V, V GS = V Zero Gate Voltage Drain Current I DSS = 4 V, V GS = V, T J = 25 C μa DrainSource OnState Resistance R DS(on) V GS = V I D = 4 A.7.85 Forward Transconductance a g fs = 2 V, I D = 4 A 3 S Dynamic Input Capacitance C iss VGS = V, 527 Output Capacitance C oss = V, 52 Reverse Transfer Capacitance C rss f = MHz 8 Effective Output Capacitance, Energy pf Related b C o(er) 46 = V to 4 V, V GS = V Effective Output Capacitance, Time Related c C o(tr) 64 Total Gate Charge Q g 5 3 GateSource Charge Q gs V GS = V I D = 4 A, = 4 V 4 nc GateDrain Charge Q gd 7 TurnOn Delay Time t d(on) 3 26 Rise Time t r V DD = 4 V, I D = 4 A 6 32 TurnOff Delay Time t d(off) R g = 9., V GS = V 7 34 ns Fall Time t f 22 Gate Input Resistance R g f = MHz, open drain.8 DrainSource Body Diode Characteristics Continuous SourceDrain Diode Current I MOSFET symbol D S 8 showing the G integral reverse Pulsed Diode Forward Current I SM p n junction diode 32 S A Diode Forward Voltage V SD T J = 25 C, I S = 4 A, V GS = V.2 V Reverse Recovery Time t rr 38 ns Reverse Recovery Charge Q rr T J = 25 C, I F = I S = 4 A, di/dt = A/μs, V R = 2 V.8 μc Reverse Recovery Current I RRM A Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 % S. c. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while is rising from % to 8 % S. S2375Rev. A, 8Jun2 2 Document Number: 952
3 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I D, DraintoSource Current (A) TOP 5 V 4 V 3 V 2 V V V 9. V 8. V 7. V 6. V T J = 25 C R DS(on), DraintoSource On Resistance (Normalized) I D = 4 A V GS = V , DraintoSource Voltage (V) Fig. Typical Output Characteristics T J, Junction Temperature ( C) Fig. 4 Normalized OnResistance vs. Temperature I D, DraintoSource Current (A) TOP 5 V 4 V 3 V 2 V V V 9. V 8. V 7. V 6. V 5. V T J = 5 C Capacitance (pf) C oss C rss C iss V GS = V, f = MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd , DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics , DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage I D, DraintoSource Current (A) T J = 5 C 4 T J = 25 C V GS, GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics V GS, GatetoSource Voltage (V) = 4 V = 25 V = V Q g, Total Gate Charge (nc) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage S2375Rev. A, 8Jun2 3 Document Number: 952
4 I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V V SD, SourceDrain Voltage (V) Fig. 7 Typical SourceDrain Diode Forward Voltage I D, Drain Current (A) T J, Case Temperature ( C) Fig. 9 Maximum Drain Current vs. Case Temperature I D, Drain Current (A).. Operation in this area limited by R DS(on) Limited by R DS(on) * T C = 25 C T J = 5 C Single Pulse BVDSS Limited μs ms ms, DraintoSource Voltage (V) * V GS > minimum V GS at which R DS(on) is specified, DraintoSource Brakdown Voltage (V) T J, Junction Temperature ( C) Fig. 8 Maximum Safe Operating Area Fig. Typical DraintoSource Voltage vs. Temperature Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse..... Pulse Time (s) Fig. Normalized Thermal Transient Impedance, JunctiontoCase S2375Rev. A, 8Jun2 4 Document Number: 952
5 R D V GS D.U.T. V Q G R G V DD Q GS Q GD V Pulse width µs Duty factor. % Fig. 2 Switching Time Test Circuit V G Charge Fig. 6 Basic Gate Charge Waveform 9 % Current regulator Same type as D.U.T. 5 kω 2 V.2 µf.3 µf % V GS t d(on) t r t d(off) t f D.U.T. V DS V GS Fig. 3 Switching Time Waveforms 3 ma I G I D Current sampling resistors L Fig. 7 Gate Charge Test Circuit Vary t p to obtain required I AS R G I AS D.U.T V DD V t p. Ω Fig. 4 Unclamped Inductive Test Circuit t p V DD I AS Fig. 5 Unclamped Inductive Waveforms S2375Rev. A, 8Jun2 5 Document Number: 952
6 Peak Diode Recovery dv/dt Test Circuit D.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as D.U.T. I SD controlled by duty factor D D.U.T. device under test V DD Driver gate drive P.W. Period D = P.W. Period V GS = V a D.U.T. l SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 8 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S2375Rev. A, 8Jun2 6 Document Number: 952
7 Package Information TO22 D L H() Q L() E 2 3 M * b() Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A b b() c D E e e() F H() J() L L() Ø P Q ECN: X5364Rev. C, 4Dec5 DWG: 63 Note M* =.52 inches to.64 inches (dimension including protrusion), heatsink hole for HVM e b C e() J() ASE Package Picture Xi an Revison: 4Dec5 Document Number: 66542
8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8Feb7 Document Number: 9
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E Series Power MOSFET SiHF22N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C (Ω) V GS = V.8 Q g max. (nc) 86 Q gs (nc) Q gd (nc) 24 Configuration Single D TO22 FULLPAK G S G D NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
More informationPower MOSFET. IRFD9024PbF SiHFD9024-E3 IRFD9024 SiHFD9024
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.28 Q g (Max.) (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES. IRFZ14PbF SiHFZ14-E3 IRFZ14 SiHFZ14
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
More informationPower MOSFET FEATURES. IRLD014PbF SiHLD014-E3 IRLD014 SiHLD014
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 5 V 0.20 Q g (Max.) (nc) 8.4 Q gs (nc) 2.6 Q gd (nc) 6.4 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating For Automatic Insertion End Stackable
More informationPower MOSFET FEATURES. IRF710PbF SiHF710-E3 IRF710 SiHF710. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) ( ) = 3.6 Q g (Max.) (nc) 17 Q gs (nc) 3.4 Q gd (nc) 8.5 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510
Power MOSFET IRF510, SiHF510 PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt rating Repetitive avalanche rated 175 C
More informationPower MOSFET FEATURES. IRFPG40PbF SiHFPG40-E3 IRFPG40 SiHFPG40
Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) (Ω) V GS = 10 V 3.5 Q g (Max.) (nc) 120 Q gs (nc) 16 Q gd (nc) 65 Configuration Single TO247AC S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
More informationPower MOSFET FEATURES. IRF530PbF SiHF530-E3 IRF530 SiHF530. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.16 Q g (Max.) (nc) 6 Q gs (nc) 5.5 Q gd (nc) 11 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationPower MOSFET FEATURES DESCRIPTION. IRF840PbF SiHF840-E3 IRF840 SiHF840 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) () = 0.85 Q g max. (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single D TO-220AB G G DS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free
More informationPower MOSFET. IRFI9634GPbF SiHFI9634G-E3 IRFI9634G SiHFI9634G T C = 25 C. V GS at - 10 V
Power MOSFET PRODUCT SUMMARY (V) 250 R DS(on) (Ω) V GS = 10 V 1.0 Q g (Max.) (nc) 38 Q gs (nc) 8.0 Q gd (nc) 18 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 0.55 Q g (Max.) (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL110-GE3 SiHFL110TR-GE3 a Lead (Pb)-free T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D SOT223 G D S G D S NChannel MOSFET FEATURES Halogenfree According
More informationPower MOSFET FEATURES DESCRIPTION. IRF720PbF SiHF720-E3 IRF720 SiHF720 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel
More informationPower MOSFET FEATURES. IRF620PbF SiHF620-E3 IRF620 SiHF620. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) = 0.80 Q g (Max.) (nc) 14 Q gs (nc) 3.0 Q gd (nc) 7.9 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
More informationPower MOSFET FEATURES. IRF630PbF SiHF630-E3 IRF630 SiHF630. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 23 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
More informationPower MOSFET FEATURES. IRF840PbF SiHF840-E3 IRF840 SiHF840
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
More informationPower MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationPower MOSFET FEATURES. IRF630PbF SiHF630-E3 IRF630 SiHF630. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 200 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. ( ) at 25 C V GS = V 3.2 Q g (max.) (nc) 2 Q gs (nc) 3 Q gd (nc) 5 Configuration Single DPAK (TO252) D G S G D S NChannel
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
More informationPower MOSFET FEATURES. IRF9630PbF SiHF9630-E3 IRF9630 SiHF9630
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Max.) (Ω) = 0.80 Q g (Max.) (nc) 29 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationPower MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G S G D S NChannel MOSFET ORDERING INFORMATION Package Lead
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 0 V 0.85 Q g (Max.) (nc) 38 Q gs (nc) 9.0 Q gd (nc) 8 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature
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Power MOSFET PRODUCT SUMMARY (V) 800 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 24 Q gd (nc) 110 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
More informationPower MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
More informationPower MOSFET. IRF9520PbF SiHF9520-E3 IRF9520 SiHF9520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET FEATURES. IRF744PbF SiHF744-E3 IRF744 SiHF744 T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY (V) 450 R DS(on) (Ω) = 0.63 Q g (Max.) (nc) 80 Q gs (nc) 1 Q gd (nc) 41 Configuration Single TO0 D G G D S S NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration HVMDIP S G Single S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 1.8 Q g (Max.) (nc) 20 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single D HVMDIP FEATURES Dynamic dv/dt rating Repetitive avalanche rated For
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Power MOSFET PRODUCT SUMMARY (V) 1 R DS(on) (Ω) = 1 V.2 Q g (Max.) (nc) 61 Q gs (nc) 14 Q gd (nc) 29 Configuration Single TO22 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
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D Series Power MOSFET SiHG22N5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.23 Q g max. (nc) 98 Q gs (nc) 3 Q gd (nc) 22 Configuration Single TO27C D FETURES Optimal Design Low
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Power MOSFET PRODUCT SUMMARY (V) 300 R DS(on) (Ω) = 0 V 0.75 Q g (Max.) (nc) 7 Q gs (nc) 4.8 Q gd (nc) 7.6 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = V 0.55 Q g (Max.) (nc) 39 Q gs (nc) Q gd (nc) 19 Configuration Single FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V Rating
More informationPower MOSFET. Package SOT-223 SOT-223 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration Single S SOT223 D G G D S D PChannel MOSFET FEATURES Surface Mount Available
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Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) (Ω) V GS = V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single TO220 G D S ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
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D Series Power MOSFET SiHG32N5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.5 Q g max. (nc) 96 Q gs (nc) 8 Q gd (nc) 29 Configuration Single TO27C S G D ORDERING INFORMTION Package
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 5.0 V 0.80 Q g (Max.) (nc) 16 Q gs (nc) 2.7 Q gd (nc) 9.6 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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