Power MOSFET T C = 25 C

Transcription

1 Power MOSFET PROUCT SUMMRY V S (V) 200 R S(on) () = 10 V 0.18 Q g max. (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single I 2 PK (TO262) G S 2 PK (TO263) G G S S NChannel MOSFET FETURES Surface mount Lowprofile throughhole vailable in tape and reel vailable ynamic dv/dt rating 10 C operating temperature vailable Fast switching Fully avalanche rated Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that are RoHScompliant and / or parts that are nonrohscompliant. For example, parts with lead (Pb) terminations are not RoHScompliant. Please see the information / tables in this datasheet for details. ESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combinations of fast switching, ruggedized device design, low onresistance and costeffectiveness. The 2 PK is a surface mount power package capable of accommodating die size up to HEX. It provides the highest power capability and the last lowest possible onresistance in any existing surface mount package. The 2 PK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The throughhole version (SiHF60L) is available for lowprofile applications. ORERING INFORMTION Package 2 PK (TO263) 2 PK (TO263) 2 PK (TO263) I 2 PK (TO262) Lead (Pb)free and Halogenfree SiHF60SGE3 SiHF60STRLGE3 a SiHF60STRRGE3 a SiHF60LGE3 Lead (Pb)free IRF60SPbF IRF60STRLPbF a IRF60STRRPbF a Note a. See device orientation. SOLUTE MXIMUM RTINGS (T C = 2 C, unless otherwise noted) PRMETER SYMOL LIMIT UNIT rainsource Voltage V S 200 GateSource Voltage ± 20 V Continuous rain Current at 10 V T C = 2 C 18 I T C = 100 C 11 Pulsed rain Current a, e I M 72 Linear erating Factor 1.0 W/ C Single Pulse valanche Energy b, e E S 80 mj valanche Current a I R 18 Repetitive valanche Energy a E R 13 mj Maximum Power issipation T C = 2 C 130 P T = 2 C 3.1 W Peak iode Recovery dv/dt c, e dv/dt.0 V/ns Operating Junction and Storage Temperature Range T J, T stg to 10 Soldering Recommendations (Peak temperature) d for 10 s 300 C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = 0 V, starting T J = 2 C, L = 2.7 mh, R g = 2, I S = 18 (see fig. 12). c. I S 18, di/dt 10 /μs, V V S, T J 10 C. d. 1.6 mm from case. e. Uses IRF60, SiHF60 data and test conditions. S16001Rev. E, 18Jan16 1 ocument Number: THIS OCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PROUCTS ESCRIE HEREIN N THIS OCUMENT RE SUJECT TO SPECIFIC ISCLIMERS, SET FORTH T

2 THERML RESISTNCE RTINGS PRMETER SYMOL TYP. MX. UNIT Maximum Junctiontombient (PC mounted, steadystate) a R thj 0 C/W Maximum JunctiontoCase (rain) R thjc 1.0 Note a. When mounted on 1" square PC (FR or G10 material). SPECIFICTIONS (T J = 2 C, unless otherwise noted) PRMETER SYMOL TEST CONITIONS MIN. TYP. MX. UNIT Static rainsource reakdown Voltage V S = 0 V, I = 20 μ 200 V V S Temperature Coefficient V S /T J Reference to 2 C, I = 1 m c 0.29 V/ C GateSource Threshold Voltage (th) V S =, I = 20 μ V GateSource Leakage I GSS = ± 20 V ± 100 n V S = 200 V, = 0 V 2 Zero Gate Voltage rain Current I SS V S = 160 V, = 0 V, T J = 12 C 20 μ rainsource OnState Resistance R S(on) = 10 V I = 11 b 0.18 Forward Transconductance g fs V S = 0 V, I = 11 d 6.7 S ynamic Input Capacitance C iss VGS = 0 V, 1300 Output Capacitance C oss V S = 2 V, 30 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. d 130 Total Gate Charge Q g 70 GateSource Charge Q gs I = 10 V = 18, V S = 160 V, see fig. 6 and 13 b, c 13 nc Gaterain Charge Q gd 39 TurnOn elay Time t d(on) 1 Rise Time t r V = 100 V, I = 18, 1 TurnOff elay Time t d(off) R g = 9.1, R =., see fig. 10 b, c ns Fall Time t f 36 Gate Input Resistance R g f = 1 MHz, open drain rainsource ody iode Characteristics Continuous Sourcerain iode Current I MOSFET symbol S showing the 18 integral reverse G Pulsed iode Forward Current a I SM p n junction diode 72 ody iode Voltage V S T J = 2 C, I S = 18, = 0 V b 2.0 V ody iode Reverse Recovery Time t rr ns ody iode Reverse Recovery Charge Q rr T J = 2 C, I F = 18, di/dt = 100 /μs b, c μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Uses IRF60/SiHF60 data and test conditions. S S16001Rev. E, 18Jan16 2 ocument Number: THIS OCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PROUCTS ESCRIE HEREIN N THIS OCUMENT RE SUJECT TO SPECIFIC ISCLIMERS, SET FORTH T

3 TYPICL CHRCTERISTICS (2 C, unless otherwise noted) I, rain Current () 91037_01 Top 1 V 10 V 8.0 V 7.0 V 6.0 V V.0 V ottom. V V 20 µs Pulse Width T C = 2 C V S, raintosource Voltage (V) Fig. 1 Typical Output Characteristics, T J = 2 C R S(on), raintosource On Resistance (Normalized) 91037_ I = 18 = 10 V T J, Junction Temperature ( C) Fig. Normalized OnResistance vs. Temperature I, rain Current () 91037_ Top ottom 1 V 10 V 8.0 V 7.0 V 6.0 V. V.0 V. V µs Pulse Width T C = 10 C V S, raintosource Voltage (V). V Fig. 2 Typical Output Characteristics, T J = 17 C Capacitance (pf) 91037_ = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss C rss V S, raintosource Voltage (V) Fig. Typical Capacitance vs. raintosource Voltage 20 I = 18 I, rain Current () 91037_ C 2 C 20 µs Pulse Width V S = 0 V , GatetoSource Voltage (V), GatetoSource Voltage (V) 91037_ V S = 100 V V S = 0 V V S = 160 V For test circuit see figure Q G, Total Gate Charge (nc) Fig. 3 Typical Transfer Characteristics Fig. 6 Typical Gate Charge vs. GatetoSource Voltage S16001Rev. E, 18Jan16 3 ocument Number: THIS OCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PROUCTS ESCRIE HEREIN N THIS OCUMENT RE SUJECT TO SPECIFIC ISCLIMERS, SET FORTH T

4 20 I S, Reverse rain Current () 91037_07 10 C 2 C = 0 V V S, Sourcetorain Voltage (V) Fig. 7 Typical Sourcerain iode Forward Voltage I, rain Current () 91037_ T C, Case Temperature ( C) Fig. 9 Maximum rain Current vs. Case Temperature I, rain Current () 91037_ Operation in this area limited by R S(on) 1 T C = 2 C T J = 10 C Single Pulse V S, raintosource Voltage (V) 10 µs 100 µs 1 ms 10 ms Fig. 10a Switching Time Test Circuit V S 90 % R g 10 V V S Pulse width 1 µs uty factor 0.1 % R.U.T. V Fig. 8 Maximum Safe Operating rea 10 % t d(on) t r t d(off) t f Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) 91037_ Single Pulse (Thermal Response) t 1, Rectangular Pulse uration (s) Fig. 10 Maximum Effective Transient Thermal Impedance, JunctiontoCase S16001Rev. E, 18Jan16 ocument Number: THIS OCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PROUCTS ESCRIE HEREIN N THIS OCUMENT RE SUJECT TO SPECIFIC ISCLIMERS, SET FORTH T P M t 1 t 2 Notes: 1. uty Factor, = t 1 /t 2 2. Peak T j = P M x Z thjc T C

5 1 V 10 V Q G V S L river Q GS Q G R g 20 V t p.u.t. I S 0.01 Ω V V G Charge Fig. 12a Unclamped Inductive Test Circuit Fig. 13a asic Gate Charge Waveform t p V S Current regulator Same type as.u.t. 0 kω 12 V 0.2 µf 0.3 µf.u.t. V S I S 3 m E S, Single Pulse Energy (mj) 91037_12c Fig. 12b Unclamped Inductive Waveforms Top ottom I V = 0 V Starting T J, Junction Temperature ( C) Fig. 13b Gate Charge Test Circuit I G I Current sampling resistors Fig. 12c Maximum valanche Energy vs. rain Current S16001Rev. E, 18Jan16 ocument Number: THIS OCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PROUCTS ESCRIE HEREIN N THIS OCUMENT RE SUJECT TO SPECIFIC ISCLIMERS, SET FORTH T

6 Peak iode Recovery dv/dt Test Circuit.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g river same type as.u.t. I S controlled by duty factor.u.t. device under test V river gate drive P.W. Period = P.W. Period = 10 V a.u.t. l S waveform Reverse recovery current ody diode forward current di/dt.u.t. V S waveform iode recovery dv/dt V Reapplied voltage Inductor current ody diode forward drop Ripple % I S Note a. = V for logic level devices Fig. 1 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S16001Rev. E, 18Jan16 6 ocument Number: THIS OCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PROUCTS ESCRIE HEREIN N THIS OCUMENT RE SUJECT TO SPECIFIC ISCLIMERS, SET FORTH T

7 Package Information TO263 (HIGH VOLTGE) (atum ) 3 E L1 H 1 2 C 3 C L2 etail c2 Gauge plane 0 to 8 L3 L L etail Rotated 90 CW scale 8:1 H 1 Seating plane 2 x b2 2 x e 2 x b M M Plating b1, b3 c ± 0.00 M ase metal E 1 (c) c1 Lead tip (b, b2) Section and C C Scale: none E1 View MILLIMETERS INCHES MILLIMETERS INCHES IM. MIN. MX. MIN. MX. IM. MIN. MX. MIN. MX E b E b e 2. SC SC b H b L c L c L c L3 0.2 SC SC L ECN: S82110Rev., 1Sep08 WG: 970 Notes 1. imensioning and tolerancing per SME Y1.M imensions are shown in millimeters (inches). 3. imension and E do not include mold flash. Mold flash shall not exceed mm (0.00") per side. These dimensions are measured at the outmost extremes of the plastic body at datum.. Thermal P contour optional within dimension E, L1, 1 and E1.. imension b1 and c1 apply to base metal only. 6. atum and to be determined at datum plane H. 7. Outline conforms to JEEC outline to TO263. ocument Number: Revision: 1Sep08 1

8 Package Information I 2 PK (TO262) (HIGH VOLTGE) (atum ) E c2 E L1 Seating plane 1 L2 C C L 3 x b2 3 x b c 1 E1 Section 2 x e M M Plating b1, b3 ase metal c c1 Lead tip (b, b2) Section and C C Scale: None MILLIMETERS INCHES MILLIMETERS INCHES IM. MIN. MX. MIN. MX. IM. MIN. MX. MIN. MX b E b E b e 2. SC SC b L c L c L c ECN: S822Rev., 27Oct08 WG: 977 Notes 1. imensioning and tolerancing per SME Y1.M imension and E do not include mold flash. Mold flash shall not exceed mm per side. These dimensions are measured at the outmost extremes of the plastic body. 3. Thermal pad contour optional within dimension E, L1, 1, and E1.. imension b1 and c1 apply to base metal only. ocument Number: Revision: 27Oct08 1

9 Legal isclaimer Notice Vishay isclaimer LL PROUCT, PROUCT SPECIFICTIONS N T RE SUJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHSCompliant fulfill the definitions and restrictions defined under irective 2011/6/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) recast, unless otherwise specified as noncompliant. Please note that some Vishay documentation may still make reference to RoHS irective 2002/9/EC. We confirm that all the products identified as being compliant to irective 2002/9/EC conform to irective 2011/6/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as HalogenFree follow HalogenFree requirements as per JEEC JS709 standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEEC JS709 standards. Revision: 02Oct12 1 ocument Number: 91000