P-Channel 100-V (D-S) MOSFET

Transcription

1 SUM9P-9L P-Channel -V (D-S) MOSFET PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D () Q g (Typ.).9 at V GS = - V at V GS = V nc FETURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC TO-263 S G Drain Connected to Tab G D S Top View Ordering Information: SUM9P-9L-E3 (Lead (Pb)-free) D P-Channel MOSFET BSOLUTE MXIMUM RTINGS T = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± 2 T C = 25 C - 9 T Continuous Drain Current (T J = 5 C) C = 25 C - 52 I D T = 25 C b, c T = 25 C b, c Pulsed Drain Current I DM - 9 T Continuous Source-Drain Diode Current C = 25 C - 25 T I = 25 C S - 9 b, c valanche Current I L =. mh S - 7 Single-Pulse valanche Energy E S 245 mj T C = 25 C 375 T Maximum Power Dissipation C = 25 C 25 P D W T = 25 C 3.6 b, c T = 25 C 4.5 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERML RESISTNCE RTINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-mbient b, d t s R thj 8 Maximum Junction-to-Case (Drain) Steady State R thjc.33.4 C/W Notes: a. Package Limited. b. Surface Mounted on " x " FR4 board. c. t = s. d. Maximum under Steady State conditions is 4 C/W. S9-659-Rev. E, 2-pr-9

2 SUM9P-9L SPECIFICTIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = - 25 µ - V V DS Temperature Coefficient ΔV DS /T J - 25 V GS(th) Temperature Coefficient ΔV GS(th) /T J I D = - 25 µ 5.9 mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = - 25 µ V Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V ± n V DS = - V, V GS = V - Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = V, T J = 75 C - 5 µ On-State Drain Current a I D(on) V DS V, V GS = - V - 9 V GS = - V, I D = - 2 Drain-Source On-State Resistance a.56.9 R DS(on) V GS = V, I D = Ω Forward Transconductance a g fs V DS = - 5 V, I D = S Dynamic b Input Capacitance C iss Output Capacitance C oss 7 V DS = - 5 V, V GS = V, f = MHz Reverse Transfer Capacitance C rss 69 pf V DS = - 5 V, V GS = - V, I D = Total Gate Charge Q g Gate-Source Charge Q gs V DS = - 5 V, V GS = V, I D = nc Gate-Drain Charge Q gd 5 Gate Resistance R g f = MHz 3.5 Ω Turn-On Delay Time t d(on) 2 3 Rise Time t r V DD = - 5 V, R L =.56 Ω Turn-Off Delay Time t d(off) I D - 9, V GEN = - V, R g = Ω ns Fall Time t f 87 3 Drain-Source Body Diode Characteristics Continous Source-Drain Diode I Current S T C = 25 C - 9 Pulse Diode Forward Current a I SM - 25 Body Diode Voltage V SD I S = V Body Diode Reverse Recovery Time t rr 8 2 ns Body Diode Reverse Recovery Charge Q rr I F = - 2, di/dt = /µs, T J = 25 C nc Reverse Recovery Fall Time t a 56 Reverse Recovery Rise Time t b 24 ns Notes a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 S9-659-Rev. E, 2-pr-9

3 SUM9P-9L TYPICL CHRCTERISTICS 25 C, unless otherwise noted V GS = V thru 4 V I D - Drain-Current () V Drain Current () - ( I D 3 2 T C = 25 C 25 C - 55 C V DS - Drain-to-Source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics.3 5 R D S(on) - On-Resistance (Ω).2. V GS = 4.5 V V GS = V C - Capacitance (pf) C rss C iss C oss I D - Drain Current () On-Resistance vs. Drain Current V DS - Drain-to-Source (V) Capacitance - Gate-to-Source Voltage (V) V G S I D = - 9 V DS = 5 V V DS = 8 V R D S o n ) - On-Resistance (Normalized) V GS = V I D = Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S9-659-Rev. E, 2-pr-9 3

4 ( t i SUM9P-9L TYPICL CHRCTERISTICS 25 C, unless otherwise noted. I S - Source Current () T J = 5 C 25 C R DS(on) - Drain-to-Source On-Resistance (Ω) C.2 25 C V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage I D = m 5 V G S h ) V a r a n c e ( V ).5.3. P o we r (W) T J - Temperature ( C) Threshold Voltage Time (s) Single Pulse, Junction-to-Case (T C = 25 C) 4 35 P o w e r Dissipation (W) I D - Drain Current () Limited by R * DS(on) µs µs ms ms DC 5 Single pulse T c = 25 C T C - Case-Temperature ( C) Power Derating (Junction-to-Case).. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating rea 4 S9-659-Rev. E, 2-pr-9

5 l i f f t i i SUM9P-9L TYPICL CHRCTERISTICS 25 C, unless otherwise noted 2 Drain Current () - I D I D a v - Peak valanche Curent () T C - Case Temperature ( C) Max valanche and Drain Current vs. Case Temperature t in - Time in valanche (s) valanche Current vs. Time e n t T h e r m a l I m p e d a n c e v e T r a n s e c z e d E N o r m a Single..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg? S9-659-Rev. E, 2-pr-9 5

6 TO-263 (D 2 PK): 3-LED Package Information -B- E -- L2 c2 D4 D2 D3 E K 6 E3 D L3 L D e b2 b Detail c E2. M M 2 PL - 5 L L4 DETIL (ROTTED 9 ) M b b SECTION - Notes. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. c c c* INCHES MILLIMETERS DIM. MIN. MX. MIN. MX b b b Thin lead Thick lead c Thin lead Thick lead c D D D D D E E E E e. BSC 2.54 BSC K L L L L L4. BSC.254 BSC M ECN: T3-77-Rev. K, 3-Sep-3 DWG: 5843 Revison: 3-Sep-3 Document Number: 798 THIS DOCUMENT IS SUBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN ND THIS DOCUMENT RE SUBJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?9

7 N826 RECOMMENDED MINIMUM PDS FOR D 2 PK: 3-Lead.42 (.668).635 (6.29).355 (9.7).45 (3.683).35 (3.429).2 (5.8).5 (.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: pr-5

8 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9