N-Channel 20-V (D-S) MOSFETs

Transcription

1 TNT/TS N-Channel -V (D-S) MOSFETs PRODUCT SUMMARY I D (A) V DS (V) r DS(on) ( ) TNT V GS =.5 V GS =.5 V.65. FEATURES BENEFITS APPLICATIONS Low On-Resistance:.9 Low Threshold:.9 V (typ).5-v or Lower Operation Fast Switching Speed: ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Low Battery Voltage Operation Direct Logic-Level Interfact: TTL/CMOS Dirvers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems, DC/DC Converters Solid-State Relays Load/Power Switching Cell Phones, Pagers TO-6 (SOT-) G S Top View Marking Code: D TNT: NOwll TNTS: NSwll w = Week Code ll = Lot Traceability ABSOLUTE MAXIMUM RATINGS (T A = 5 C UNLESS OTHERWISE NOTED) Parameter Symbol TNT TNTS c Unit Drain-Source Voltage V DS Gate-Source Voltage V GS 8 8 V T A = 5 C.7. Continuous Drain Current (T J = 5 C) b T A = 7 C I D.58. Pulsed Drain Current a I DM A Continuous Source Current (Diode Conduction) b I S.6. T A = 5 C.5. Power Dissipation b T A = 7 C P D..65 W Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol TNT TNTS c Unit Maximum Junction-to-Ambient b R thja 57 5 C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR Board, t sec. c. Copper lead frame. Document Number: 7 S-77 Rev. F, -Feb-

2 TNT/TS SPECIFICATIONS (T A = 5 C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V( BR)DSS V GS = V, I D = A 6 Gate-Threshold Voltage V GS(th) V DS = V GS, I D = 5 A V Gate-Body Leakage I GSS V DS = V, V GS = 8 V na V DS = 6 V, V GS = V. Zero Gate Voltage Drain Current I DSS T J = 85 C A V DS 5 V, V GS =.5 V.5 On-State Drain Current a I D(on) V DS 5 V, V GS =.5 V.5 A V GS =.5 V, I D =.6 A.9. Drain-Source On-Resistance a r DS(on) V GS =.5 V, I D =.6 A..5 Forward Transconductance a g fs V DS = 5 V, I D =.6 A. S Diode Forward Voltage a V SD I S =.6 A, V GS = V.8. V Dynamic Total Gate Charge Q g 9 8 Gate-Source Charge Q gs V DS = V, V GS =.5 V, I D =.6 A 5 pc Gate-Drain Charge Q gd 75 Input Capacitance C iss 9 Output Capacitance C oss V DS = V, V GS = V, f = MHz 5 pf Reverse Transfer Capacitance C rss Switching Turn-On Delay Time t d(on) 8 Rise Time t r VDD V = V, R L = 6 Turn-Off Delay Time t d(off) I D.6 A, V GEN =.5 V, R G = 6 ns Fall-Time t f 7 Notes a. Pulse test: PW s duty cycle %. VNLJ Document Number: 7 S-77 Rev. F, -Feb-

3 TNT/TS TYPICAL CHARACTERISTICS (T A = 5 C UNLESS OTHERWISE NOTED) 6 Output Characteristics Transfer Characteristics 5 V GS = 5,.5, V.5 V V T C = 55 C.5 V V 5 C 5 C,.5, V.5 V V DS Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 5 Capacitance r DS(on) Drain-Source On-Resistance ( Ω ) V GS =.5 V V GS =.5 V C Capacitance (pf) 5 5 C rss C oss C iss V DS Drain-to-Source Voltage (V) 5 Gate Charge.7 On-Resistance vs. Junction Temperature V DS = V I D =.6 A r DS(on) On-Resistance ( Ω ) (Normalized) V GS =.5 V I D =.6 A Q g Total Gate Charge (pc) T J Junction Temperature ( C) Document Number: 7 S-77 Rev. F, -Feb-

4 TNT/TS TYPICAL CHARACTERISTICS (T A = 5 C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage.8 On-Resistance vs. Gate-to-Source Voltage I S Source Current (A). T J = 5 C T J = 5 C r DS(on) On-Resistance ( Ω ).6.. I D =.6 A V SD Source-to-Drain Voltage (V). 5. Threshold Voltage Single Pulse Power. 8 V GS(th) Variance (V)... I D = 5 A Power (W) 6 T C = 5 C Single Pulse T J Junction Temperature ( C)..... Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse. Square Wave Pulse Duration (sec) Document Number: 7 S-77 Rev. F, -Feb-

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