Automotive P-Channel 20 V (D-S) 175 C MOSFET

Size: px
Start display at page:

Download "Automotive P-Channel 20 V (D-S) 175 C MOSFET"

Transcription

1 Automotive P-Channel V (D-S) 75 C MOSFET D 3 SOT-3 (TO-36) S FEATURES TrenchFET power MOSFET AEC-Q qualified d % R g and UIS tested Material categorization: for definitions of compliance please see /doc?999 G Top View Marking Code: 8S PRODUCT SUMMARY V DS (V) - R DS(on) ( ) at V GS = -4.5 V.5 R DS(on) ( ) at V GS = -.5 V.5 I D (A) -3. Configuration Single Package SOT-3 G P-Channel MOSFET S D ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V DS - Gate-source voltage V GS ± V Continuous drain current T C = 5 C -3. I D T C = 5 C -.8 Continuous source current (diode conduction) a I S -.5 A Pulsed drain current b I DM -.7 Single pulse avalanche current I AS -6 L =. mh Single pulse avalanche energy E AS.8 mj Maximum power dissipation b T C = 5 C P D T C = 5 C.67 W Operating junction and storage temperature range T J, T stg -55 to +75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient PCB mount c R thja 75 Junction-to-foot (drain) R thjf 75 C/W Notes a. Package limited b. Pulse test; pulse width 3 μs, duty cycle % c. When mounted on " square PCB (FR4 material) d. Parametric verification ongoing S8-8-Rev. D, 9-Feb-8 Document Number: 6676 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

2 SPECIFICATIONS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V DS V GS =, I D = -5 μa V Gate-source threshold voltage V GS(th) V DS = V GS, I D = -5 μa Gate-source leakage I GSS V DS = V, V GS = ± V - - ± na Zero gate voltage drain current I DSS V GS = V V DS = - V, T J = 5 C μa V GS = V V DS = - V V GS = V V DS = - V, T J = 75 C On-state drain current a I D(on) V GS = -4.5 V V DS 5 V A Notes a. Pulse test; pulse width 3 μs, duty cycle % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature V GS = -4.5 V I D = -.4 A Drain-source on-state resistance a R DS(on) V GS = -4.5 V I D = -.4 A, T J = 5 C V GS = -4.5 V I D = -.4 A, T J = 75 C V GS = -.5 V I D = -.8 A Forward transconductance b g fs V DS = - V, I D = -.4 A S Dynamic b Input capacitance C iss Output capacitance C oss V GS = V V DS = - V, f = MHz pf Reverse transfer capacitance C rss Total gate charge c Q g Gate-source charge c Q gs V GS = -4.5 V V DS = - V, I D = -.4 A nc Gate-drain charge c Q gd -. - Gate resistance R g f = MHz Turn-on delay time c t d(on) - 3 Rise time c t r V DD = - V, R L = Turn-off delay time c t d(off) I D -.9 A, V GEN = -4.5 V, R g = ns Fall time c t f - 8 Source-Drain Diode Ratings and Characteristics Pulsed current a I SM A Forward voltage V SD I F = - A, V GS = V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S8-8-Rev. D, 9-Feb-8 Document Number: 6676 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

3 TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) V GS = 5 V thru 3.5 V 8 8 I D - Drain Current (A) 6 4 V GS = 3 V V GS =.5 V I D - Drain Current (A) 6 4 T C = 5 C V GS = V V GS =.5 V V GS = V V DS - Drain-to-Source Voltage (V) Output Characteristics T C = 5 C T C = -55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics.5 g fs - Transconductance (S) T C = 5 C T C = -55 C T C = 5 C R DS(on) - On-Resistance (Ω) V GS =.5 V V GS = 4.5 V I D - Drain Current (A) Transconductance I D -DrainCurrent(A) On-Resistance vs. Drain Current C - Capacitance (pf) C oss C iss V GS - Gate-to-Source Voltage (V) I D =.4 A V DS =V C rss V DS - Drain-to-Source Voltage (V) Q g - Total Gate Charge (nc) Capacitance Gate Charge S8-8-Rev. D, 9-Feb-8 3 Document Number: 6676 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

4 TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted).. R DS(on) -On-Resistance (Normalized) I D =.8 A V GS =.5 V V GS = 4.5 V R DS(on) -On-Resistance (Normalized) I D =.4 A V GS =.5 V V GS = 4.5 V T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature (.8 A) T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature (.4 A) R DS(on) -On-Resistance (Ω).6.4. T J = 5 C R DS(on) -On-Resistance (Ω).6.4. T J = 5 C T J = 5 C T J = 5 C V GS - Gate-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage (.8 A) On-Resistance vs. Gate-to-Source Voltage (.4 A).5 I S - Source Current (A).. T J = 5 C T J = 5 C V GS(th) Variance (V) I D = 5 μa I D = 5 ma V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage T J - Temperature ( C) Threshold Voltage S8-8-Rev. D, 9-Feb-8 4 Document Number: 6676 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

5 THERMAL RATINGS (T A = 5 C, unless otherwise noted) - 9 I DM Limited V DS -Drain-to-Source Voltage (V) I D = ma I D - Drain Current (A). Limited by R * DS(on) T C = 5 C Single Pulse BVDSS Limited µs ms ms ms s, s, DC T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature... V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse 3. T JM - T A = P DM Z (t) thja 4. Surface Mounted Square Wave Pulse Duration (s) Notes: P DM Normalized Thermal Transient Impedance, Junction-to-Ambient t t t. Duty Cycle, D = t. Per Unit Base = R thja = 75 C/W S8-8-Rev. D, 9-Feb-8 5 Document Number: 6676 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

6 THERMAL RATINGS (T A = 5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (5 C) - Normalized Transient Thermal Impedance Junction-to-Foot (5 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.6", double sided with oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see /ppg?6676. S8-8-Rev. D, 9-Feb-8 6 Document Number: 6676 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?9

7 Package Information SOT-3 (TO-36): 3-LEAD b 3 E E S e e D A A. mm C.4" Seating Plane C q.5 mm Gauge Plane Seating Plane A C L L Dim MILLIMETERS INCHES Min Max Min Max A A A b c D E E e.95 BSC.374 Ref e.9 BSC.748 Ref L L.64 Ref.5 Ref S.5 Ref. Ref q ECN: S-3946-Rev. K, 9-Jul- DWG: 5479 Document Number: Jul-

8 AN87 Mounting LITTLE FOOT SOT-3 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. ambient air. This pattern uses all the available area underneath the body for this purpose..4.9 See Application Note 86, Recommended Minimum Pad Patterns With Outline Drawing Access for MOSFETs, ( for the basis of the pad design for a LITTLE FOOT SOT-3 power MOSFET footprint. In converting this footprint to the pad set for a power device, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package FIGURE. Footprint With Copper Spreading The electrical connections for the SOT-3 are very simple. Pin is the gate, pin is the source, and pin 3 is the drain. As in the other LITTLE FOOT packages, the drain pin serves the additional function of providing the thermal connection from the package to the PC board. The total cross section of a copper trace connected to the drain may be adequate to carry the current required for the application, but it may be inadequate thermally. Also, heat spreads in a circular fashion from the heat source. In this case the drain pin is the heat source when looking at heat spread on the PC board. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, thermal connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. Figure shows the footprint with copper spreading for the SOT-3 package. This pattern shows the starting point for utilizing the board area available for the heat spreading copper. To create this pattern, a plane of copper overlies the drain pin and provides planar copper to draw heat from the drain lead and start the process of spreading the heat so it can be dissipated into the A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least. inches. The use of wide traces connected to the drain plane provides a low-impedance path for heat to move away from the device. Document Number: Nov-3

9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9

Automotive N-Channel 30 V (D-S) 175 C MOSFET

Automotive N-Channel 30 V (D-S) 175 C MOSFET Automotive N-Channel 3 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 3 R DS(on) () at V GS = V.4 R DS(on) () at V GS = 4.5 V.3 I D (A) 8 Configuration Single D 3 SOT-3 (TO-36) G Top View S G D S N-Channel

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 60 V (D-S) 75 C MOSFET SQ309ES PRODUCT SUMMARY V DS (V) - 60 R DS(on) ( ) at V GS = - 0 V 0.335 R DS(on) ( ) at V GS = - 4.5 V 0.500 I D (A) -.7 Configuration Single FEATURES Halogen-free

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 75 C MOSFET SQ36ES PRODUCT SUMMARY V DS (V) -6 R DS(on) () at V GS = - V.77 R DS(on) () at V GS = -4.5 V.46 I D (A) -.8 Configuration Single D 3 SOT-3 (TO-36) G Top View

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel 00 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 00 R DS(on) () at V GS = 0 V 0.300 I D (A).67 Configuration Single Package SOT-3 D 3 SOT-3 (TO-36) G Top View Marking Code: 9E S G D

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested

More information

N-Channel 40 V (D-S) MOSFET

N-Channel 40 V (D-S) MOSFET N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) 4.5 at V GS = V 4.3.54 at V GS = 4.5 V 4..7 at V GS =.5 V 3.6 G S TO-36 (SOT-3) 3 D 3.8 nc FEATURES TrenchFET

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si33CDS P-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) -.39 at V GS = -4.5 V -6 e.5 at V GS = -.5 V -5.8.63 at V GS = -.8 V -5. TO-36 (SOT-3) 9 nc FEATURES TrenchFET

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET P-Channel 30-V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 0.90 at V GS = - 0 V -.7-30 0.330 at V GS = - 4.5 V -. nc FEATURES Halogen-free According to IEC 649-- Available

More information

P-Channel 12 V (D-S) MOSFET

P-Channel 12 V (D-S) MOSFET Si333DDS P-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.).8 at V GS = - 4.5 V - 6 e.3 at V GS = - 3.7 V - 6 e -.4 at V GS = -.5 V - 6 e 9 nc.63 at V GS =

More information

N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET Si4EDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = 4.5 V 4.9.4 at V GS =.5 V 4.4.5 at V GS =.8 V.9 FEATURES Halogen-free According to IEC 649-- Available TrenchFET

More information

P-Channel 60-V (D-S) MOSFET

P-Channel 60-V (D-S) MOSFET New Product P-Channel 60-V (D-S) MOSFET Si309CDS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 60 0.345 at V GS = - 0 V -.6 0.450 at V GS = - 4.5 V -.4 TO-36 (SOT-3).7 nc FEATURES Halogen-free

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3DDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) Max. I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES Halogen-free According to IEC 69-- Definition TrenchFET

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET Si369DS P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) - 3.9 at V GS = - V - 7.6.34 at V GS = - 6 V - 7.4 at V GS = - 4.5 V - 6.5 G TO-36 (SOT-3) 3 D.4 nc FEATURES

More information

Automotive P-Channel 20 V (D-S) 175 C MOSFET

Automotive P-Channel 20 V (D-S) 175 C MOSFET Automotive P-Channel 2 V (D-S) 75 C MOSFET SQ23ES PRODUCT SUMMARY V DS (V) - 2 R DS(on) ( ) at V GS = - 4.5 V.2 R DS(on) ( ) at V GS = - 2.5 V.8 I D (A) - 3.9 Configuration Single FEATURES Halogen-free

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET P-Channel 2 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) - 2.32 at V GS = - 4.5 V - 5.9.4 at V GS = - 2.5 V - 5.2.675 at V GS = -.8 V - 4.3 G TO-236 (SOT-23) 3.8 nc FEATURES

More information

P-Channel 8 V (D-S) MOSFET

P-Channel 8 V (D-S) MOSFET Si9DS P-Channel 8 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 8. at V GS = - 4.5 V - 6 e.6 at V GS = -.5 V - 6 e.48 at V GS = -.8 V - 5.9.68 at V GS = -.5 V - 5.

More information

P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET Si33DS P-Channel 0-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.039 at V GS = - 4.5 V - 4.7-0 0.05 at V GS = -.5 V - 4. 0.068 at V GS = -.8 V - 3.5 FEATURES Halogen-free According to

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si36BDS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).7 at V GS = V. 3 3..65 at V GS =.5 V 3.5 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g

More information

P-Channel 20 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si8DS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A).5 at V GS = V.5 FEATURES Halogen-free According to IEC 649-- Definition % R g and UIS Tested TrenchFET Power MOSFET Compliant

More information

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 4 R DS(on) ( ) at V GS = V.35 R DS(on) ( ) at V GS = 4.5 V.48 I D (A) 8 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q

More information

N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET Si3CDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES TrenchFET Power MOSFET Material categorization: For definitions

More information

N-Channel 30-V (D-S) MOSFET

N-Channel 30-V (D-S) MOSFET Si6BDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ).5 at V GS = V 4.5.8 at V GS = 4.5 V.4.6 nc FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel 6 V (D-S) 75 C MOSFET TO-263 7-Lead D S FEATURES TrenchFET power MOSFET Package with low thermal resistance % R g and UIS tested AEC-Q qualified Material categorization: for definitions

More information

Automotive P-Channel 80 V (D-S) 175 C MOSFET

Automotive P-Channel 80 V (D-S) 175 C MOSFET Automotive P-Channel 8 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) () at V GS = - 1 V.25 R DS(on) () at V GS = - 4.5 V.31 I D (A) - 5 Configuration Single FEATURES TrenchFET Power MOSFET

More information

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET Automotive P-Channel 4 V (D-S) 75 C MOSFET SQ349EEV PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - V.5 R DS(on) ( ) at V GS = - 4.5 V.78 I D (A) - 7.4 Configuration Single FEATURES Halogen-free

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 60 V (D-S) 75 C MOSFET SQ3427AEEV PRODUCT SUMMARY V DS (V) -60 R DS(on) () at V GS = -0 V 0.095 R DS(on) () at V GS = -4.5 V 0.35 I D (A) -5.3 Configuration Single Package TSOP-6 D

More information

Automotive N-Channel 300 V (D-S) 175 C MOSFET

Automotive N-Channel 300 V (D-S) 175 C MOSFET Automotive N-Channel 300 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = V 0.330 I D (A) Configuration Single TO-252 D FEATURES TrenchFET power MOSFET Package with low thermal

More information

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET Automotive P-Channel 4 V (D-S) 75 C MOSFET SQ39ES PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - V.75 R DS(on) ( ) at V GS = - 4.5 V.45 I D (A) - 4.6 Configuration Single FEATURES Halogen-free According

More information

Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET SQ9EEH Automotive Dual N-Channel V (D-S) 75 C MOSFET D 6 SOT-363 SC-7 Dual (6 leads) S 4 G 5 S Top View G 3 D FEATURES TrenchFET power MOSFET AEC-Q qualified % R g tested Typical ESD protection: 8 V Material

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -6 R DS(on) (Ω) at V GS = - V.93 R DS(on) (Ω) at V GS = -4.5 V.33 I D (A) - Configuration Single TO-22AB FEATURES TrenchFET power MOSFET

More information

Automotive N-Channel 40 V (D-S) 175 C MOSFET

Automotive N-Channel 40 V (D-S) 175 C MOSFET Automotive N-Channel 40 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 40 R DS(on) () at V GS = 10 V 0.0063 R DS(on) () at V GS = 4.5 V 0.0075 I D (A) 58 Configuration Single PowerPAK SO-8L Single D FEATURES

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 60 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -60 R DS(on) () at V GS = - V 0.0250 R DS(on) () at V GS = -4.5 V 0.0350 I D (A) -36 Configuration Single Package PowerPAK SO-8L FEATURES

More information

N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET N-Channel 60 V (D-S) MOSFET N700K Marking code: 7K D 3 SOT-3 (TO-36) G Top View PRODUCT SUMMARY V DS (V) 60 R DS(on) max. ( ) at V GS = 0 V Q g typ. (nc) 0.4 I D (ma) 300 Configuration Single S FEATURES

More information

Automotive N-Channel 300 V (D-S) 175 C MOSFET

Automotive N-Channel 300 V (D-S) 175 C MOSFET Automotive N-Channel 300 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = 0 V 0.097 I D (A) 35 Configuration Single Package TO-263 D TO-263 FEATURES TrenchFET power MOSFET Package

More information

P-Channel 8 V (D-S) MOSFET

P-Channel 8 V (D-S) MOSFET Si35CDS P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 8.35 at V GS = - 4.5 V - 5.8.48 at V GS = -.5 V - 5..65 at V GS = -.8 V - 4.3 TO-36 (SOT-3) nc FEATURES Halogen-free

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) at V GS = V.38 I D (A) 2 Configuration TO-263 Single D FEATURES TrenchFET Power MOSFET Package with Low Thermal Resistance

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel 0 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 0 R DS(on) ( ) at V GS = V 0.038 R DS(on) ( ) at V GS = 4.5 V 0.050 I D (A) 23 Configuration Single Package PowerPAK SO-8L PowerPAK SO-8L

More information

N-Channel 240 V (D-S) MOSFET

N-Channel 240 V (D-S) MOSFET N-Channel 40 V (D-S) MOSFET TN404K/TN404KL/BS07KL PRODUCT SUMMARY Part Number TN404K TN404K, BS07KL TO-6AA (TO-9) V DS (V) R DS(on) ( ) V GS(th) (A) 40 4 at V GS = 0 V 0.8 to I D (A) 0. 0. TO-9-8RM (TO-8

More information

Automotive N-Channel 200 V (D-S) 175 C MOSFET

Automotive N-Channel 200 V (D-S) 175 C MOSFET Automotive N-Channel 2 V (D-S) 75 C MOSFET SQM942E FEATURES TO-263 Top View G D S TrenchFET power MOSFET Package with low thermal resistance AEC-Q qualified % R g and UIS tested Material categorization:

More information

Automotive P-Channel 200 V (D-S) 175 C MOSFET

Automotive P-Channel 200 V (D-S) 175 C MOSFET Automotive P-Channel 2 V (D-S) 75 C MOSFET SQJ43AEP 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for

More information

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET Automotive P-Channel 4 V (D-S) 75 C MOSFET SQM43EL TO-263 S G S D G Top View D P-Channel MOSFET PRODUCT SUMMARY V DS (V) -4 R DS(on) () at V GS = - V.3 R DS(on) () at V GS = -4.5 V.38 I D (A) -2 Configuration

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel V (D-S) 75 C MOSFET SQM76EL PRODUCT SUMMARY V DS (V) R DS(on) () at V GS = V.59 R DS(on) () at V GS = 4.5 V.8 I D (A) 75 Configuration Single Package TO-263 D TO-263 FEATURES TrenchFET

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 75 C MOSFET SQM2P6-7L PRODUCT SUMMARY V DS (V) - 6 R DS(on) () at V GS = - V.67 R DS(on) () at V GS = - 4.5 V.88 I D (A) - 2 Configuration TO-263 Single S FEATURES TrenchFET

More information

Complementary (N- and P-Channel) MOSFET

Complementary (N- and P-Channel) MOSFET Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS

More information

Automotive P-Channel 40 V (D-S) 175 C MOSFET

Automotive P-Channel 40 V (D-S) 175 C MOSFET Automotive P-Channel 4 V (D-S) 175 C MOSFET SQD5P4-9L PRODUCT SUMMARY V DS (V) - 4 R DS(on) ( ) at V GS = - 1 V.94 R DS(on) ( ) at V GS = - 4.5 V.19 I D (A) - 5 Configuration TO-252 Single S FEATURES Halogen-free

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET N7K N-Channel 6-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 6 at V GS = V G S T O-6 SOT - Top View N7K (7K)* * Marking Code Ordering Information: N7K-T N7K-T-E (Lead (Pb)-free) N7K-T-GE

More information

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).8 at V GS = 4.5 V 8. at V GS =.5 V 8 nc SO-8 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power

More information

Automotive N-Channel 100 V (D-S) 175 C MOSFET

Automotive N-Channel 100 V (D-S) 175 C MOSFET Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () at V GS = V.34 R DS(on) () at V GS = 4.5 V.4 I D (A) 35 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single

More information

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET Dual P-Channel 2-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = - 4.5 V - 4-2 8.94 at V GS = - 2.5 V - 4 FEATURES Halogen-free Option Available TrenchFET Power

More information

Automotive N-Channel 40 V (D-S) 175 C MOSFET

Automotive N-Channel 40 V (D-S) 175 C MOSFET Automotive N-Channel 4 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 4 R DS(on) ( ) at V GS = 1 V.41 R DS(on) ( ) at V GS = 4.5 V.52 I D (A) 32 Configuration Single PowerPAK SO-8L Single D FEATURES TrenchFET

More information

P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET Si34DV P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) d,e Q g (Typ.).9 at V GS = - V -8-3.3 at V GS = -6 V -8 nc.7 at V GS = -4.5 V -8 FEATURES TrenchFET Power MOSFET % R

More information

N-Channel 150-V (D-S) MOSFET

N-Channel 150-V (D-S) MOSFET Si3440DV N-Channel 50-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 50 0.375 at V GS = 0 V.5 0.400 at V GS = 6.0 V.4 TSOP-6 Top View FEATURES Halogen-free According to IEC 649-- Definition

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si49DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 4 5 D FEATURES

More information

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET

Automotive Dual N-Channel 40 V (D-S) 175 C MOSFET Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D 2 D 4 G 2 3 S 2 2 G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:

More information

Automotive N-Channel 80 V (D-S) 175 C MOSFET

Automotive N-Channel 80 V (D-S) 175 C MOSFET Automotive N-Channel 8 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 8 R DS(on) () at V GS = V.3 I D (A) 5 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single FEATURES TrenchFET power MOSFET

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 6 R DS(on) (Ω) at V GS = - 1 V.85 R DS(on) (Ω) at V GS = - 4.5 V 15 I D (A) - 8 Configuration Single FEATURES Halogen-free According

More information

Automotive P-Channel 80 V (D-S) 175 C MOSFET

Automotive P-Channel 80 V (D-S) 175 C MOSFET Automotive P-Channel 8 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) (Ω) at V GS = - V.25 R DS(on) (Ω) at V GS = - 6 V.29 I D (A) - 32 Configuration Single PowerPAK SO-8L Single S FEATURES

More information

Automotive N-Channel 40 V (D-S) 175 C MOSFET

Automotive N-Channel 40 V (D-S) 175 C MOSFET Automotive N-Channel 40 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 40 R DS(on) ( ) at V GS = 10 V 0.0041 I D (A) 50 Configuration Single TO-263 FEATURES TrenchFET Power MOSFET Package with Low Thermal

More information

N- and P-Channel 60-V (D-S), 175 C MOSFET

N- and P-Channel 60-V (D-S), 175 C MOSFET N- and P-Channel -V (D-S), 75 C MOSFET Si4559EY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel.55 at V GS = V ± 4.5.75 at V GS = 4.5 V ± 3.9 P-Channel -.2 at V GS = - V ± 3..5 at V GS = - 4.5

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET Si9DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 5 D FEATURES

More information

Dual P-Channel 30 V (D-S) MOSFET

Dual P-Channel 30 V (D-S) MOSFET Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) - 3 R DS(on) () at V GS = - V.4 R DS(on) () at V GS = - 4.5 V.78 I D (A) per leg -5.4 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q Qualified

More information

P-Channel 2.5-V (G-S) MOSFET

P-Channel 2.5-V (G-S) MOSFET Si3443BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.060 at V GS = - 4.5 V - 4.7-0 0.090 at V GS = -.7 V - 3.8 0.00 at V GS = -.5 V - 3.7 FEATURES Halogen-free According

More information

Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET

Automotive Dual P-Channel 30 V (D-S) 175 C MOSFET Automotive Dual P-Channel 3 V (D-S) 75 C MOSFET D 6 Marking Code: 9B TSOP-6 Dual D S 5 G Top View S 3 G FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for

More information

P-Channel 30-V (D-S) MOSFET

P-Channel 30-V (D-S) MOSFET New Product P-Channel 3-V (D-S) MOSFET Si357CDV PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).7 at V GS = - V - 5. - 3.3 at V GS = -.5 V -. 5. nc FEATURES Halogen-free According to IEC 69--

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions

More information

N- and P-Channel 30 V (D-S) MOSFET

N- and P-Channel 30 V (D-S) MOSFET N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.47 at V GS = V 6..65 at V GS = 4.5 V 5.2 2.75 P-Channel - 3.89 at V GS = - V - 4.3.4 at V GS = -

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (D-S) MOSFET SUA76E PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.).6 at V GS = V 56.6.7 at V GS = 7.5 V 54.4 53.5 nc Thin-Lead TO-22 FULLPAK FEATURES ThunderFET power MOSFET Q

More information

Automotive P-Channel 12 V (D-S) 175 C MOSFET

Automotive P-Channel 12 V (D-S) 175 C MOSFET Automotive P-Channel 2 V (D-S) 75 C MOSFET SQJ4EP 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for definitions

More information

N- and P-Channel 30-V (D-S) MOSFET

N- and P-Channel 30-V (D-S) MOSFET Si355DV N- and P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 3.5 at V GS = V.5.75 at V GS =.5 V. P-Channel - 3. at V GS = - V -..3 at V GS = -.5 V -. FEATURES Halogen-free

More information

P-Channel 20 V (D-S) MOSFET with Schottky Diode

P-Channel 20 V (D-S) MOSFET with Schottky Diode P-Channel 20 V (D-S) MOSFET with Schottky Diode Si4823DY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 20 0.08 at V GS = - 4.5 V - 4. 0.75 at V GS = - 2.5 V - 3.3 SCHOTTKY PRODUCT SUMMARY

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel 60 V (D-S) 75 C MOSFET 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified Material categorization: for definitions of compliance please

More information

N-Channel 60 V (D-S), MOSFET

N-Channel 60 V (D-S), MOSFET N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

Dual P-Channel 60-V (D-S) 175 MOSFET

Dual P-Channel 60-V (D-S) 175 MOSFET Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET

More information

N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material

More information

Dual N-Channel 25 V (D-S) MOSFETs

Dual N-Channel 25 V (D-S) MOSFETs Dual N-Channel 25 V (D-S) MOSFETs 3 mm mm Top View PRODUCT SUMMARY PowerPAIR 3 x 3 3 mm D Bottom View CHANNEL- CHANNEL-2 V DS (V) 25 25 R DS(on) max. ( ) at V GS = V.83.424 R DS(on) max. ( ) at V GS =

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Si9DV Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).58 at V GS = V.7.7 at V GS =.5 V. TSOP-6 Top View.8 nc FEATURES Halogen-free According to IEC 69-- Definition

More information

Dual P-Channel 40 V (D-S) MOSFET

Dual P-Channel 40 V (D-S) MOSFET Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) d Q g (Typ.) -.27 at V GS = - V - 8.3 at V GS = -.5 V - 7.2 2.7 nc SO-8 S 8 D G 2 7 D S 2 3 D 2 G 2 5 D 2 FEATURES Halogen-free

More information

N-Channel 250 V (D-S) 175 C MOSFET

N-Channel 250 V (D-S) 175 C MOSFET N-Channel 25 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 25.35 at V GS = V 63.325 at V GS = 7.5 V 62 TO-22AB Top View S D G Ordering Information: -GE3 (lead (Pb)-free

More information

P-Channel 100-V (D-S) 175 C MOSFET

P-Channel 100-V (D-S) 175 C MOSFET P-Channel -V (D-S) 75 C MOSFET SUD5P-43L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).43 at V GS = - V - 37-54 nc.48 at V GS = - 4.5 V - 35 FEATURES TrenchFET Power MOSFET Compliant to RoHS

More information

N-Channel 100-V (D-S) 175 C MOSFET

N-Channel 100-V (D-S) 175 C MOSFET N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested

More information

N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) d Q g (TYP.).4 at V GS = V 2.46 at V GS = 7.5 V 2 TO-263 Top View S D G Ordering Information: -GE3 (Lead (Pb)-free and halogen-free)

More information

Dual N-Channel 20-V (D-S) MOSFET

Dual N-Channel 20-V (D-S) MOSFET Si99CDY Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V nc SO- FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power

More information

N-Channel 60-V (D-S) MOSFET

N-Channel 60-V (D-S) MOSFET Si8DS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V.. at V GS = 4.5 V.7 FEATURES Halogen-free According to IEC 4-- Available TrenchFET Power MOSFET % R g Tested TO-

More information

N- and P-Channel 20-V (D-S) MOSFET

N- and P-Channel 20-V (D-S) MOSFET N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).8 at V GS =.5 V 3. N-Channel. at V GS =.5 V..8 at V GS =.8 V.3.5 at V GS = -.5 V -. P-Channel -. at V GS = -.5 V -.8.3 at

More information

Dual N-Channel 30 V (D-S) MOSFET

Dual N-Channel 30 V (D-S) MOSFET Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition

More information

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET New Product Dual P-Channel 2-V (D-S) MOSFET Si9933CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = -.5 V - - 2 8.9 at V GS = - 2.5 V - FEATURES Halogen-free Option Available

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V 2 R S(on) () at V GS = 4.5 V 5 I (A).7 Configuration Single Package SC-7 SOT-33 SC-7 Single ( leads) S 4 5 FEATURES

More information

Dual N-Channel 30-V (D-S) MOSFET

Dual N-Channel 30-V (D-S) MOSFET Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant

More information

Dual P-Channel 30-V (D-S) MOSFET

Dual P-Channel 30-V (D-S) MOSFET Dual P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = - V - 7. - 3.4 at V GS = - 4.5 V - 5.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power

More information

Dual N-Channel 30 V (D-S) MOSFETs

Dual N-Channel 30 V (D-S) MOSFETs Dual N-Channel 3 V (D-S) MOSFETs PRODUCT SUMMARY Channel- 3 Channel-2 3 V DS (V) R DS(on) ( ) (Max.) I D (A) Q g (Typ.).2 at V GS = V 6 a 6.8 nc.5 at V GS =.5 V 6 a.37 at V GS = V 28 a 32 nc.5 at V GS

More information

Complementary 30 V (G-S) MOSFET

Complementary 30 V (G-S) MOSFET Si39DL Complementary 3 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) ( ) I D (A) N-Channel 3.8 at V GS = V 3.7 at V GS =. V. P-Channel - 3.9 at V GS = - V -..7 at V GS = -. V -.33 FEATURES TrenchFET Power MOSFET

More information

N-Channel 40-V (D-S) MOSFET

N-Channel 40-V (D-S) MOSFET SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition

More information

N-Channel 40 V (D-S) MOSFET

N-Channel 40 V (D-S) MOSFET N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a, g Q g (Typ.) 4.235 at V GS = V 6.32 at V GS = 4.5 V 6 32 nc PowerPAK SO-8L Single FEATURES TrenchFET Gen IV power MOSFET

More information

Automotive P-Channel 60 V (D-S) 175 C MOSFET

Automotive P-Channel 60 V (D-S) 175 C MOSFET Automotive P-Channel 6 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 6 R DS(on) ( ) at V GS = - V.55 R DS(on) ( ) at V GS = - 4.5 V I D (A) - 2 Configuration TO-252 Single S FEATURES Halogen-free According

More information

Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET New Product Dual P-Channel 2-V (D-S) MOSFET Si93CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) - 2.92 at V GS = - V - 8.33 at V GS = -.5 V - 8 2 SO-8 S 8 D G 2 7 D FEATURES Halogen-free

More information

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode Si468DY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) Channel- 3 Channel-2 3.7 at V GS = V 8..95 at V GS = 4.5 V 7.5. at V GS = V 5.2.5

More information

Automotive P-Channel 150 V (D-S) 175 C MOSFET

Automotive P-Channel 150 V (D-S) 175 C MOSFET Automotive P-Channel 5 V (-S) 75 C MOSFET SQS8ENW. mm Top View Marking Code: Q6 PowerPAK -8W Single. mm 5 6 7 8 S G Bottom View S S FEATURES TrenchFET power MOSFET AEC-Q qualified d % R g and UIS tested

More information

P-Channel 40 V (D-S) 175 C MOSFET

P-Channel 40 V (D-S) 175 C MOSFET P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC

More information

Automotive N-Channel 60 V (D-S) 175 C MOSFET

Automotive N-Channel 60 V (D-S) 175 C MOSFET Automotive N-Channel 6 V (D-S) 175 C MOSFET SQD5N6-9L PRODUCT SUMMARY V DS (V) 6 R DS(on) ( ) at V GS = 1 V.9 R DS(on) ( ) at V GS = 4.5 V.13 I D (A) 5 Configuration TO-252 Single D FEATURES Halogen-free

More information