P-Channel Enhancement-Mode MOSFET Transistors. I D(on) Min (ma) r DS(on) Max ( ) 3N to N to

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1 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V (BR)DSS Min (V) V GS(th) (V) r DS(on) Max ( ) I D(on) Min (ma) C rss Max (pf) t ON Typ (ns) 3N to N to Features Benefits Applications Ultra-Low Input Leakage:.2 pa Typ. High Gate Breakdown Voltage: 25 V Normally Off Description High Input Impedance Isolation Minimize Handling ESD Problems High Off Isolation without Power Ultra-High Input Impedance Amplifier Smoke Detectors Electrometers Analog Switching Digital Switching The 3N63/64 are lateral p-channel MOSFETs designed for analog switch and preamplifier applications where high speed and low parasitic capacitances are required. The hermetic TO-26AF package is compatible with military processing per military standards (see Military information). TO-26AF (TO-72) D S 4 G 2 3 Top View Case Substrate Absolute Maximum Ratings (T A = 25 C Unless Otherwise Noted) 4 Continuous Drain Current ma Lead Temperature ( / 6 from case for seconds) C Storage Temperature to 2 C Operating Junction Temperature to 5 C Power Dissipation a mw Notes: a. Derate 3 mw/ C above 25 C Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, Please request FaxBack document #7228. Siliconix P-3744 Rev. D, 4-Jul-94

2 3N63 3N64 Static Drain-Source Breakdown Voltage V (BR)DSS I D = A, V DS = V Source-Drain Breakdown Voltage V (BR)SDS I S = A, V GD = V BD = V Gate-Threshold Voltage V GS(th) I D = A, V GS = V DS Gate-Source Voltage V GS I D =.5 ma, V DS = 5 V V GS = 4 V, V DS = V < Gate-Body Leakage I GSS V GS = 3 V, V DS = V < pa T A = 25 C d T A = 25 C d V DS = 5 V, V GS = V Zero-Gate Voltage Drain Current I DSS T A = 25 C d 2 na V Zero-Gate Voltage Source Current I SDS T A = 25 C d 25 na V GD = V BD = V, V SD = 2 V 4 8 pa On-State Drain Current c I D(on) V DS = 5 V, V GS = V ma V GS = 2 V, I D = A Drain-Source On-Resistance r DS(on) T A = 25 C d 27 Dynamic Forward Transconductance c g fs VDS = 5 V, I D = ma ms S Common-Source Output Conductance c g f = khz os S Input Capacitance C iss V Output Capacitance C DS = 5 V, I D = ma oss f = MHz pf Reverse Transfer Capacitance C rss Switching e t d(on) Turn-On Time V DD = 5 V, R L = 5 t r I D ma, V GEN = 2 V R G =5 Turn-Off Time t d(off) ns Notes: a. T A = 25 C unless otherwise noted. MRA b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW 3 s duty cycle 3%. d. This parameter not registered with JEDEC. e. Switching time is essentially independent of operating temperature. 2 Siliconix P-3744 Rev. D, 4-Jul-94

3 Typical Characteristics 5 4 Output Characteristics V GS = 2 V 8 V 5 4 V DS = V GS Transfer Characteristics Drain Current (ma) V 4 V 2 V V Drain Current (ma) 3 2 I D 8 V 6 V I D I D Drain Current ( A) Low-Level Output Characteristics V GS = V 9 V 8 V 7 V 6 V 5 V 4 V A) gfs Forward Transconductance ( k k Common-Source Forward Transconductance vs. Drain Current V DS = 5 V f= khz T A = 25 C 25 C rds(on) Drain-Source On-Resistance ( k k k Drain-Source On-Resistance vs. Gate-Source Voltage T A = 25 C T A = 25 C I D = A 2 Drain-Source Voltage (V) VDS I D Drain Current (ma) Low-Level Drain-Source On-Voltage vs. Gate-Source Voltage I D =. ma ma ma 2 Siliconix P-3744 Rev. D, 4-Jul-94 3

4 Typical Characteristics (Cont d) Capacitance vs. Gate-Source Voltage 3. na Drain-Source Leakage Current vs. Temperature C (pf) C iss C oss V DS = 5 V f= MHz C rss Leakage I S(off), I D(off) na na pa I S(off) I D(off) pa T A Temperature ( C) gos Output Conductance ( S) k k Common-Source Output Conductance vs. Drain Voltage ma f= khz I D(on) = ma gos Output Conductance ( S) Common-Source Output Conductance vs. Drain Current V DS = 5 V f= khz I D Drain Current (ma) Switching Time Test Circuit To Scope V DD V 5 R L V OUT To Scope V IN 2 V 5% V IN 5 Input pulse: t d, t r < ns Pulse width: ns Rep rate: MHz Sampling Scope t r < 36 ps R IN = M C IN = 2 pf BW = 5 MHz t d(on) V V OUT V DD t r % t f t d(off) 9% 4 Siliconix P-3744 Rev. D, 4-Jul-94

5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 9 Revision: 8-Jul-8

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