N-Channel 30-V (D-S) MOSFET
|
|
- Abner Moore
- 5 years ago
- Views:
Transcription
1 Si5BC N-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).35 at V GS = V at V GS =.5 V 6. FEATURES Halogen-free According to IEC 69-- Available TrenchFET Power MOSFET 6-8 ChipFET S Bottom View G Marking Code A XXX Lot Traceability and ate Code Part # Code Ordering Information: Si5BC-T-E3 (Lead (Pb)-free) Si5BC-T-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol 5 s Steady State Unit rain-source Voltage V S 3 Gate-Source Voltage V GS ± V Continuous rain Current (T J = 5 C) a T A = 5 C I T A = 85 C A Pulsed rain Current I M Continuous Source Current (iode Conduction) a I S.. T A = 5 C Maximum Power issipation a.5.3 P T A = 85 C.3.7 W Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Soldering Recommendations (Peak Temperature) b, c 6 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t 5 s 5 5 R thja Steady State 8 95 C/W Maximum Junction-to-Foot (rain) Steady State R thjf 8 Notes: a. Surface Mounted on " x " FR board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ocument Number: 735 S-835-Rev. B, 9-ec-8
2 Si5BC SPECIFICATIONS Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage V GS(th) V S = V GS, I = 5 µa. 3. V Gate-Body Leakage I GSS V S = V, V GS = ± V ± na V S = 3 V, V GS = V Zero Gate Voltage rain Current I SS V S = 3 V, V GS = V, T J = 85 C 5 µa On-State rain Current a I (on) V S 5 V, V GS = V A V GS = V, I =.9 A rain-source On-State Resistance a.9.35 R S(on) V GS =.5 V, I =. A.35. Ω Forward Transconductance a g fs V S = V, I =.9 A 9 S iode Forward Voltage a V S I S =. A, V GS = V.8. V ynamic b Total Gate Charge Q g Gate-Source Charge Q gs V S = 5 V, V GS = V, I =.9 A.9 nc Gate-rain Charge Q gd.6 Gate Resistance R g f = MHz Ω Turn-On elay Time t d(on) 5 Rise Time t r V = 5 V, R L = 5 Ω 5 Turn-Off elay Time t d(off) I A, V GEN = V, R g = 6 Ω 7 ns Fall Time t f 5 Source-rain Reverse Recovery Time t rr I F =. A, di/dt = A/µs 6 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS T J = 5 C, unless otherwise noted V GS = thru V 6 6 I - rain Current (A) 8 I - rain Current (A) 8 T C = 5 C 3 V V S - rain-to-source Voltage (V) Output Characteristics 5 C - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics ocument Number: 735 S-835-Rev. B, 9-ec-8
3 Si5BC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted R S(on) - On-Resistance (Ω)..3.. V GS =.5 V V GS = V C - Capacitance (pf) C oss C iss C rss. 8 6 I - rain Current (A) On-Resistance vs. rain Current V S - rain-to-source Voltage (V) Capacitance.6 I =.9 A I =.9 A V GS - Gate-to-Source Voltage (V) 8 6 V S = 5 V R S(on) - On-Resistance (Normalized)....8 V GS = V 6 8 Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature T J = 5 C. I =.9 A I S - Source Current (A) T J = 5 C - On-Resistance (Ω) R S(on) V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage. 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage ocument Number: 735 S-835-Rev. B, 9-ec-8 3
4 Si5BC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted I = 5 µa Variance (V) V GS(th) Power (W) T J - Temperature ( C) Threshold Voltage Time (s) Single Pulse Power Limited by R S(on)* I M Limited - rain Current (A) I. I (on) Limited T A = 5 C Single Pulse BVSS Limited.. V S - rain-to-source Voltage (V) * V GS > minimum VGS at which R S(on) is specified Safe Operating Area P(t) =. P(t) =. P(t) =. P(t) =. P(t) = P(t) = C Normalized Effective Transient Thermal Impedance uty Cycle =.5. Notes:.. P M.5 t t. t. uty Cycle, = t. Per Unit Base = R thja = 8 C/W 3. T Single Pulse JM - T A = P M Z (t) thja. Surface Mounted Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient ocument Number: 735 S-835-Rev. B, 9-ec-8
5 Si5BC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted Normalized Effective Transient Thermal Impedance. uty Cycle = Single Pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?735. ocument Number: 735 S-835-Rev. B, 9-ec-8 5
6 Package Information 6-8 ChipFET L E E 3 3 S e b c x Backside View X./.3 R A C ETAIL X NOTES:. All dimensions are in millimeaters.. Mold gate burrs shall not exceed.3 mm per side. 3. Leadframe to molded body offset is horizontal and vertical shall not exceed.8 mm.. imensions exclusive of mold gate burrs. 5. No mold flash allowed on the top and bottom lead surface. MILLIMETERS INCHES im Min Nom Max Min Nom Max A b c c E E e.65 BSC.56 BSC L S.55 BSC. BSC 5 Nom ECN: C-358 Rev. F, 9-Jan- WG: Nom ocument Number: 75 5-Jan-
7 AN8 Single-Channel 6-8 ChipFET Power MOSFET Recommended Pad Pattern and Thermal Performance INTROUCTION New ChipFETs in the leadless 6-8 package feature the same outline as popular 6-8 resistors and capacitors but provide all the performance of true power semiconductor devices. The 6-8 ChipFET has the same footprint as the body of the LITTLE FOOT TSOP-6, and can be thought of as a leadless TSOP-6 for purposes of visualizing board area, but its thermal performance bears comparison with the much larger SO-8. This technical note discusses the single-channel ChipFET 6-8 pin-out, package outline, pad patterns, evaluation board layout, and thermal performance. 8 mil 68 mil PIN-OUT Figure shows the pin-out description and Pin identification for the single-channel 6-8 ChipFET device. The pin-out is similar to the TSOP-6 configuration, with two additional drain pins to enhance power dissipation and thermal performance. The legs of the device are very short, again helping to reduce the thermal path to the external heatsink/pcb and allowing a larger die to be fitted in the device if necessary. Single 6-8 ChipFET 6 mil 8 mil FIGURE. Footprint With Copper Spreading The pad pattern with copper spreading shown in Figure improves the thermal area of the drain connections (pins,,3,6.7,8) while remaining within the confines of the basic footprint. The drain copper area is.5 sq. in. or 3.5 sq. mm). This will assist the power dissipation path away from the device (through the copper leadframe) and into the board and exterior chassis (if applicable) for the single device. The addition of a further copper area and/or the addition of vias to other board layers will enhance the performance still further. An example of this method is implemented on the Evaluation Board described in the next section (Figure 3). S G THE VISHAY SILICONIX EVALUATION BOAR FOR THE SINGLE 6-8 ocument Number: 76 -ec-3 Bottom View FIGURE. For package dimensions see the 6-8 ChipFET package outline drawing ( BASIC PA PATTERNS The basic pad layout with dimensions is shown in Application Note 86, Recommended Minimum Pad Patterns With Outline rawing Access for MOSFETs, ( This is sufficient for low power dissipation MOSFET applications, but power semiconductor performance requires a greater copper pad area, particularly for the drain leads. The ChipFET 6-8 evaluation board measures.6 in by.5 in. Its copper pad pattern consists of an increased pad area around the six drain leads on the top-side approximately.8 sq. in. 3. sq. mm and vias added through to the underside of the board, again with a maximized copper pad area of approximately the board-size dimensions. The outer package outline is for the 8-pin IP, which will allow test sockets to be used to assist in testing. The thermal performance of the 6-8 on this board has been measured with the results following on the next page. The testing included comparison with the minimum recommended footprint on the evaluation board-size pcb and the industry standard one-inch square FR pcb with copper on both sides of the board.
8 AN8 Front of Board Back of Board ChipFET vishay.com FIGURE 3. THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 6-8 ChipFET measured as junction-to-foot thermal resistance is 5 C/W typical, C/W maximum for the single device. The foot is the drain lead of the device as it connects with the body. This is identical to the SO-8 package R jf performance, a feat made possible by shortening the leads to the point where they become only a small part of the total footprint area. Junction-to-Ambient Thermal Resistance (dependent on pcb size) The typical R ja for the single-channel 6-8 ChipFET is 8 C/W steady state, compared with 68 C/W for the SO-8. Maximum ratings are 95 C/W for the 6-8 versus 8 C/W for the SO-8. The results show that a major reduction can be made in the thermal resistance by increasing the copper drain area. In this example, a 5 C/W reduction was achieved without having to increase the size of the board. If increasing board size is an option, a further 33 C/W reduction was obtained by maximizing the copper from the drain on the larger square pcb. Thermal Resistance (C/W) 6 8 Min. Footprint Single EVB Square PCB Testing To aid comparison further, Figure illustrates ChipFET 6-8 thermal performance on two different board sizes and three different pad patterns. The results display the thermal performance out to steady state and produce a graphic account of how an increased copper pad area for the drain connections can enhance thermal performance. The measured steady state values of R ja for the single 6-8 ChipFET are : ) Minimum recommended pad pattern (see Figure ) on the evaluation board size of.5 in x.6 in. ) The evaluation board with the pad pattern described on Figure 3. 3) Industry standard square pcb with maximum copper both sides. 56 C/W C/W 78 C/W -5 SUMMARY Time (Secs) FIGURE. Single 6 8 ChipFET The thermal results for the single-channel 6-8 ChipFET package display similar power dissipation performance to the SO-8 with a footprint reduction of 8%. Careful design of the package has allowed for this performance to be achieved. The short leads allow the die size to be maximized and thermal resistance to be reduced within the confines of the TSOP-6 body size. ASSOCIATE OCUMENT 6-8 ChipFET ual Thermal performance, AN8 ( ocument Number: 76 -ec-3
9 Application Note 86 RECOMMENE MINIMUM PAS FOR 6-8 ChipFET.93 (.357) APPLICATION NOTE. (.559).8 (.3).36 (.9).6 (.65).6 (.6). (.) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: 7593 Revision: -Jan-8
10 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under irective /65/EU of The European Parliament and of the Council of June 8, on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS irective /95/EC. We confirm that all the products identified as being compliant to irective /95/EC conform to irective /65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEEC JS79A standards. Please note that some Vishay documentation may still make reference to the IEC 69-- definition. We confirm that all the products identified as being compliant to IEC 69-- conform to JEEC JS79A standards. Revision: -Oct- ocument Number: 9
N-Channel 30 V (D-S) MOSFET
Si5C N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) 3. at V GS = V 6.3 at V GS =.5 V 6 nc ChipFET 6-8 FEATURES TrenchFET Power MOSFET Material categorization: For definitions
More informationComplementary 20 V (D-S) MOSFET
Si555DC Complementary V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS =.5 V 5.9 N-Channel.5 at V GS =.5 V 5.6.5 at V GS =.8 V 5..86 at V GS = -.5 V -. P-Channel -. at V GS = -.5 V
More informationDual N-Channel 20 V (D-S) MOSFET
Si598DC Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS =.5 V 5.9.5 at V GS =.5 V 5.6.5 at V GS =.8 V 5. FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
More informationN-Channel 30-V (D-S) MOSFET
SiL N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A).48 at V GS = V 4.7 at V GS = 4.5 V.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFET Compliant to RoHS
More informationN- and P-Channel 20 V (D-S) MOSFET
N- and P-Channel V (D-S) MOSFET PRODUCT SUMMARY N-Channel P-Channel - V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 6-8 ChipFET.55 at V GS =.5 V g.6 nc.85 at V GS =.5 V g.5 at V GS = -.5 V - 3.7.55 at V GS
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-S) MOSFET SiBEK PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V PowerPAK SC-75-L-Single 5. mm S S G. mm.5 nc Part # code Marking Code A X
More informationP-Channel 20 V (D-S) MOSFET
SiSS23N P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2 3.3 mm.5 at V GS = -.5 V - 5 e.63 at V GS = - 2.5 V - 5 e.5 at V GS = -.8 V - 5 e 8 PowerPAK 22-8S 7 6 S S
More informationP-Channel 30 V (D-S) MOSFET
SiA483J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.2at V GS = - V - 2 a 2 nc.3 at V GS = - 4.5 V - 2 a PowerPAK SC-7-6L-Single 6 5 2.5 mm S 4 S 2 3 G 2.5 mm
More informationN-Channel 190-V (D-S) MOSFET
New Product N-Channel 9-V (-S) MOSFET SiB452K PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) 2.4 at V GS = 4.5 V.5 9 2. at V GS = 2.5 V.48 2.3 nc. at V GS =.8 V.4 PowerPAK SC-75-L-Single FEATURES
More informationN- and P-Channel 20 V (D-S) MOSFET
Si555CDC N- and P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel. at V GS =.5 V g 6.5 nc.36 at V GS =.5 V g.5 at V GS =.8 V g FEATURES Halogen-free According
More informationN-Channel 20-V (D-S) MOSFET
Si546U N-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) 2.5 at V GS = 4.5 V 2.7 at V GS = 2.5 V 2.2 at V GS =. V 2 PowerPAK ChipFET Single 7 6 5 S Bottom View Ordering Information:
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET Si545AEU PROUCT SUMMARY V S (V) R S(on) () (Max.) I (A) a Q g (Typ.) - 2.96 at V GS = - 4.5 V - 25.32 at V GS = - 2.5 V - 25.22 at V GS = -.8 V - 7 8 PowerPAK ChipFET Single 7
More informationN-Channel 150-V (D-S) MOSFET
Si4848Y N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).8 at V GS = V 3.7.9 at V GS = 6. V 3. FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs Compliant
More informationP-Channel 20 V (D-S) MOSFET
Si469H P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - SOT-363 SC-7 (6-LEAS).8 at V GS = - V -.7. at V GS = - 4.5 V -.7.55 at V GS = -.5 V -.7 5.5 nc FEATURES Halogen-free
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () I (A) b, c Q g (TYP.) 3.2 at V GS = V..24 at V GS = 4.5 V 9.2 PowerPAK SC-7-6L Single S 4 5 S 6 5.6 FEATURES TrenchFET power MOSFET Thermally
More informationN-Channel 100 V (D-S) MOSFET
SiAJ N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) a Q g (Typ.).83 at V GS = V.3.3 at V GS =.5 V 9 PowerPAK SC-7-L-Single 5 2.5 mm S S 2 3 G 2.5 mm Bottom View Ordering Information:
More informationP-Channel 30 V (D-S) MOSFET
SiA449J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.24 at V GS = - 4.5 V - 2 a 23. nc.2 at V GS = - V - 2 a.38 at V GS = - 2.5 V - 2 a PowerPAK SC-7-L-Single
More informationP-Channel 12-V (D-S) MOSFET
P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2.255 at V GS = -.5 V - 9 a.28 at V GS = - 3.7 V - 9 a.3 at V GS = - 2.5 V - 9 a. at V GS = -.8 V - 9 a.5 at V GS =
More informationP-Channel 60 V (D-S) MOSFET
P-Channel 6 V (-S) MOSFET TU4P6 PROUCT SUMMARY V S (V) R S(on) ( ) (A).45 at V GS = - V - 4-6 d.54 at V GS = - 4.5 V - 4 d FEATURES TrenchFET Power MOSFET Material categorization: APPLICATIONS Load Switch
More informationP-Channel 20 V (D-S) MOSFET
New Product SiEH P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) G -. at V GS = -.5 V -.5 at V GS = -.5 V -. at V GS = -.8 V - SOT-6 SC-7 (6-LEAS) Top View 6 5 S.5 nc Part
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel 2-V (-S) MOSFET Si3Y PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.).2 at V GS = V 2 3 nc.25 at V GS =.5 V FEATURES Halogen-free According to IEC 29-2-2 TrenchFET Power MOSFET
More informationN-Channel 12 V (D-S) MOSFET
New Product SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) SOT-363 SC-7 (6-LEAS).6 at V GS =.5 V.3 at V GS =.5 V.36 at V GS =.8 V 6 7.5 nc FEATURES Halogen-free According
More informationN-Channel 30 V (D-S) MOSFET
Si8EL N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) c Q g (Typ.). at V GS = V.5.44 at V GS = 4.5 V.4.4 nc.85 at V GS =.5 V. FEATURES TrenchFET Power MOSFET % R g Tested Typical
More informationP-Channel 1.2 V (G-S) MOSFET
Si99H P-Channel. V (G-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 8.78 at V GS = -.5 V -..95 at V GS = -.5 V -..5 at V GS = -.8 V -..5 at V GS = -.5 V -.. at V GS = -. V -. b SOT-
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () (MAX.) I (A) a Q g (TYP.) 3.84 at V GS = V 37.8.4 at V GS = 4.5 V 32.5 PowerPAK SC-7-6L Single S 4 5 6 8.2 nc FEATURES TrenchFET Gen IV power
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.49 at V GS = - V 6.6 a 2 nc.7 at V GS = - 4.5 V 5 a S FEATURES Halogen-free TrenchFET Power MOSFET % R g Tested APPLICATIONS
More informationP-Channel 2.5 V (G-S) MOSFET
Si63CY P-Channel 2.5 V (G-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) d Q g (Typ.).8 at V GS = - V - 8.6-2. at V GS = -.5 V - 6.6 5 nc. at V GS = - 2.5 V - FEATURES Halogen-free According to IEC
More informationP-Channel 20-V (D-S) MOSFET
SiB33EK P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 2.77 at V GS = - 2.5 V - 9 a 7. nc.58 at V GS = -.5 V - 9 a.5 at V GS = -.8 V - 5 PowerPAK SC-75-L-Single 5. mm S
More informationP-Channel 20 V (D-S) MOSFET
Si7655AN P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.).36 at V GS = - V - e - 2.8 at V GS = -.5 V - e 72 nc.9 at V GS = - 2.5 V - e PowerPAK 22-8S FEATURES TrenchFET
More informationN-Channel 40-V (D-S) MOSFET
N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).9 at V GS = V 9. at V GS =. V nc FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power MOSFET % R g Tested
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 60 V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) 60 R S(on) (Ω) at V GS = 0 V 20 R S(on) (Ω) at V GS = 4.5 V 50 I (A).7 Configuration Single Package SC-70 6 SOT-363 SC-70 Single (6 leads)
More informationN-Channel 20 V (D-S) MOSFET
SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A). at V GS =. V.9.7 at V GS =. V..9 at V GS =.8 V. SOT- SC-7 (-LEAS) FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V.42 R S(on) () at V GS = 4.5 V.3 I (A) 7 Configuration Single TSOP- Single S 4 5 Top View Marking Code: 8Axxx 2 3 G
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET Si38EL PROUCT SUMMARY V S (V) R S(on) (Ω) MAX. I (A) c Q g (TYP.) 3.3 at V GS = V.5.44 at V GS = 4.5 V.4.85 at V GS =.5 V.3 SOT-33 SC-7 (3 leads).4 nc FEATURES TrenchFET power
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).5 at V GS = V 7.9. at V GS = 6. V 7.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs 75 C Maximum Junction
More informationP-Channel 150 V (D-S) MOSFET
P-Channel 5 V (-S) MOSFET Si4H PROUCT SUMMARY V S (V) R S(on) () I (A) Q g (TYP.) -5.6 at V GS = - V -.5.7 at V GS = -6 V -.5 6 SOT-363 SC-7 Single (6 leads) S 4 5 4. nc FEATURES TrenchFET power MOSFETS
More informationAutomotive P-Channel 150 V (D-S) 175 C MOSFET
Automotive P-Channel 5 V (-S) 75 C MOSFET SQS8ENW. mm Top View Marking Code: Q6 PowerPAK -8W Single. mm 5 6 7 8 S G Bottom View S S FEATURES TrenchFET power MOSFET AEC-Q qualified d % R g and UIS tested
More informationP-Channel 30 V (D-S) MOSFET
New Product Si44EH P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - ocument Number: 67849 S-98-Rev. B, -Apr-.6 at V GS = - 4.5 V - 4 a 8.6 nc.54 at V GS = - V - 4 a G.85 at
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET SQ7AENW PROUCT SUMMARY V S (V) R S(on) (Ω) at V GS = V.3 R S(on) (Ω) at V GS =.5 V.8 I (A) 8 Configuration Single PowerPAK -8W Single 5 7 8 FEATURES TrenchFET power
More informationDual P-Channel 12-V (D-S) MOSFET
Dual P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -. at V GS = -.5 V -.5 a.5 nc. at V GS = -.5 V -.5 a. at V GS = -.8 V - 3.5 PowerPAK SC-7- Dual FEATURES Halogen-free
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET Si44H PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (TYP.) 3.46 at V GS = 4.5 V 4.5 at V GS =.5 V 4.57 at V GS =.8 V 4 6 SOT-363 SC-7 Single (6 leads) S 4 5 5.7 nc FEATURES TrenchFET
More informationN-Channel 30-V (D-S) MOSFET
N-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.).95 at V GS = V 8 3 9. nc.3 at V GS = 4.5 V 8 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFET
More informationN-Channel 20 V (D-S) MOSFET
Si3CDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES TrenchFET Power MOSFET Material categorization: For definitions
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET 3.3 mm mm Top View PROUCT SUMMARY PowerPAK -8S 3.3 mm 3 4 S G Bottom View V S (V) 3 R S(on) max. () at V GS = V.48 R S(on) max. () at V GS = 4.5 V.6 Q g typ. (nc) 4 I (A) 5 a
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) Q g (Typ.).8 at V GS = 1 V 46.5 6.1 at V GS = 6 V 41.6 9.3 nc.125 at V GS = 4.5 V 37.2 PowerPAK SO-8L 6.15 mm D 5.13 mm FEATURES
More informationN- and P-Channel 60-V (D-S), 175 C MOSFET
N- and P-Channel -V (D-S), 75 C MOSFET Si4559EY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel.55 at V GS = V ± 4.5.75 at V GS = 4.5 V ± 3.9 P-Channel -.2 at V GS = - V ± 3..5 at V GS = - 4.5
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (-S) 75 C MOSFET SQ75AENW PROUCT SUMMARY V S (V) -6 R S(on) (Ω) at V GS = - V.65 R S(on) (Ω) at V GS = -.5 V.9 I (A) -6 Configuration Single Package PowerPAK -W PowerPAK -W Single
More informationN- and P-Channel 20-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).8 at V GS =.5 V 3. N-Channel. at V GS =.5 V..8 at V GS =.8 V.3.5 at V GS = -.5 V -. P-Channel -. at V GS = -.5 V -.8.3 at
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET SiS45NT 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) -2 R S(on) max. () at V GS = - V.4 R S(on) max. () at V GS = -4.5 V.55 R S(on) max.
More informationDual P-Channel 30 V (D-S) MOSFET
SiA95DJ Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) - 3.87 at V GS = - V -.5 a 3. nc.5 at V GS = -.5 V -.5 a PowerPAK SC-7- Dual FEATURES Halogen-free According
More informationAutomotive N-Channel 30 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET SQ47AEH PROUCT SUMMARY V S (V) R S(on) () at V GS = 4.5 V.65 R S(on) () at V GS =.5 V.95 I (A).7 Configuration Single FEATURES TrenchFET power MOSFET AEC-Q qualified
More informationDual P-Channel 12-V (D-S) MOSFET
New Product Dual P-Channel -V (D-S) MOSFET SiA93ADJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -.8 at V GS = -.5 V -.5 a 8. nc. at V GS = -.5 V -.5 a.5 at V GS = -.8 V -.5 a PowerPAK SC-7-
More informationP-Channel 8 V (D-S) MOSFET
Si35CDS P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 8.35 at V GS = - 4.5 V - 5.8.48 at V GS = -.5 V - 5..65 at V GS = -.8 V - 4.3 TO-36 (SOT-3) nc FEATURES Halogen-free
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET 2.5 mm Top View Marking code: A5 PowerPAK SC-7-6L Single 2.5 mm S 4 S 7 5 6 2 3 G Bottom View FEATURES TrenchFET Gen IV power MOSFET Optimized Q g, Q gd, and Q gd /Q gs ratio
More informationDual N-Channel 20-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).8 at V GS = 4.5 V 8. at V GS =.5 V 8 nc SO-8 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power
More informationDual P-Channel 20-V (D-S) MOSFET
Dual P-Channel 2-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = - 4.5 V - 4-2 8.94 at V GS = - 2.5 V - 4 FEATURES Halogen-free Option Available TrenchFET Power
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationDual N-Channel 20 V (D-S) MOSFET
Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition
More informationP-Channel 20 V (D-S) MOSFET with Schottky Diode
P-Channel 20 V (D-S) MOSFET with Schottky Diode Si4823DY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 20 0.08 at V GS = - 4.5 V - 4. 0.75 at V GS = - 2.5 V - 3.3 SCHOTTKY PRODUCT SUMMARY
More informationN-Channel 250 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) 25 R S(on) max. ( ) at V GS = V.73 R S(on) max. ( ) at V GS = 7.5 V.9 Q g typ. (nc) 8. I (A)
More informationDual N-Channel 20-V (D-S) MOSFET
New Product Dual N-Channel -V (D-S) MOSFET SiA9EDJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =. V.. at V GS =. V.. nc PowerPAK SC-7- Dual FEATURES Halogen-free According to IEC
More informationN-Channel 20 V (D-S) MOSFET
N-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) a Q g (Typ.) 2.3 at V GS = 4.5 V 7.5 4.3 nc.27 at V GS = V 8 d.49 at V GS = 2.5 V 6. TSOP-6 Top View 6 FEATURES TrenchFET Power MOSFET
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET 6 Marking code: BQ TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) -2 R S(on) max. ( ) at V GS = -4.5 V.24 R S(on) max. ( ) at V GS = -2.5 V.32 R S(on) max. ( ) at V GS =
More informationN-Channel 60-V (D-S) MOSFET
N7K N-Channel 6-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (ma) 6 at V GS = V G S T O-6 SOT - Top View N7K (7K)* * Marking Code Ordering Information: N7K-T N7K-T-E (Lead (Pb)-free) N7K-T-GE
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET SiRA32P 6.5 mm Top View PROUCT SUMMARY PowerPAK SO-8 Single 8 5.5 mm 4 G Bottom View V S (V) 25 R S(on) max. () at V GS = V.2 R S(on) max. () at V GS = 4.5 V.83 Q g typ. (nc)
More informationN-Channel 60-V (D-S) MOSFET
N-Channel 6-V (-S) MOSFET TS7 PROUCT SUMMARY V S (V) R S(on) (Ω) I (ma) 6.5 at V GS = V SOT -5 G FEATURES Halogen-free According to IEC 69-- efinition Low On-Resistance:.5 Ω Low Threshold: V (typ.) Low
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (-S) MOSFET Si343V PROUCT SUMMARY V S (V) R S(on) () I (A).7 at V GS = V.4.85 at V GS = V.3 TSOP- Single S 4 5 FEATURES High-efficiency PWM optimized % R g tested Material categorization: for
More informationP-Channel 20-V (D-S) MOSFET
P-Channel -V (D-S) MOSFET DTE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V -. -.7 at V GS = -.5 V - 3.6 FEATURES Halogen-free RoHS COMPLIANT TO-6AA (TO-9) S* S G G D 3 Top View D P-Channel
More informationN- and P-Channel 30-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free
More informationP-Channel 2.5-V (G-S) MOSFET
New Product SiL P-Channel.-V (G-S) MOSFET PROUCT SUMMARY V S (V) r S(on) (Ω) I 8 at V GS = -. V ±. -. at V GS = -.6 V ±..6 at V GS = -. V ±. FEATURES TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT
More informationN- and P-Channel 20-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A). at V GS =. V. N-Channel. at V GS =. V.. at V GS =. V.. at V GS = -. V -. P-Channel -. at V GS = -. V -.. at V GS = -.V -. FEATURES
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant
More informationDual N-Channel 20 V (D-S) MOSFET
Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).35 at V GS = 4.5 V..36 at V GS =.5 V SOT-363 SC-7 (6-LEADS).9 FEATURES Halogen-free According to IEC 649-- Definition
More informationP-Channel 30-V (D-S) MOSFET
i4483ey P-Channel 30-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) 0.0085 at V G = - 0 V - 4-30 0.04 at V G = - 4.5 V - FEATURE Halogen-free According to IEC 649-- Available TrenchFET Power MOFET E
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET SiSH4N 3.3 mm Top View PowerPAK -8SH 3.3 mm.9 mm 5 6 7 8 4 G Bottom View 3 S S S FEATURES TrenchFET power MOSFET % R g and UIS tested Material categorization: for definitions
More informationN- and P-Channel 20-V (D-S) MOSFET
SiA59EDJ N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) N-Channel P-Channel -. at V GS =.5 V.5 a 3.7 nc.5 at V GS =.5 V.5 a.9 at V GS = -.5 V -.5 a 5.3 nc.37
More informationN-Channel 100 V (D-S) MOSFET
Si49DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 4 5 D FEATURES
More informationAutomotive P-Channel 12 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (-S) 75 C MOSFET SQ453EY PROUCT SUMMARY V S (V) -2 R S(on) (Ω) at V GS = -4.5 V.65 R S(on) (Ω) at V GS = -2.5 V.8 R S(on) (Ω) at V GS = -.8 V.3 I (A) -25 Configuration Single Package
More informationDual N-Channel 60-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).38 at V GS = V 7..3 at V GS =. V.8 9. nc SO-8 FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
More informationN-Channel 20 V (D-S) MOSFET
Si3DDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) Max. I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES Halogen-free According to IEC 69-- Definition TrenchFET
More informationP-Channel 30-V (D-S) MOSFET
Si357BDV P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A).5 at V GS = - V - 5. - 3. at V GS = -.5 V - 3.7 FEATURES Halogen-free According to IEC 69-- Available TrenchFET Power MOSFETs
More informationP-Channel 20 V (D-S) MOSFET
Si30CDS P-Channel 0 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 0 0. at V GS = - 4.5 V - 3. 0.4 at V GS = -.5 V -.7 3.3 nc TO-36 (SOT-3) FEATURES Halogen-free According
More informationDual P-Channel 30-V (D-S) MOSFET
Dual P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = - V - 7. - 3.4 at V GS = - 4.5 V - 5.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power
More informationDual P-Channel 60-V (D-S) 175 MOSFET
Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationP-Channel 40 V (D-S) MOSFET
P-Channel 4 V (-S) MOSFET Si44FY 8 7 6 SO-8 Single 5 FEATURES TrenchFET Gen III p-channel power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationFEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600
DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) MAX. I D (A) a Q g (TYP.) 5.77 at V GS = V 7.7.85 at V GS = 7.5 V 7.6.25 at V GS = 6 V 4 PowerPAK SC-7-6L Single 4.3 nc 2 D 3 D G Top View
More informationComplementary N- and P-Channel 20 V (D-S) MOSFET
Complementary N- and P-Channel V (D-S) MOSFET Si6CX PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).396 at V GS =.5 V.5 N-Channel.56 at V GS =.5 V..56 at V GS =.8 V..75 nc.76 at V GS =.5 V.5.756
More informationAutomotive P-Channel 40 V (D-S) 175 C MOSFET
Automotive P-Channel 4 V (-S) 75 C MOSFET SQ44EY PROUCT SUMMARY V S (V) - 4 R S(on) ( ) at V GS = - V.4 R S(on) ( ) at V GS = - 4.5 V.23 I (A) - 7.3 Configuration Single FEATURES Halogen-free According
More informationN-Channel 30-V (D-S) MOSFET
Si36BDS N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).7 at V GS = V. 3 3..65 at V GS =.5 V 3.5 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).95 at V GS = V. 3. at V GS = 4.5 V 9.4 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g Tested APPLICATIONS DC/DC
More informationN-Channel 40-V (D-S) MOSFET
SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V 2 R S(on) () at V GS = 4.5 V 5 I (A).7 Configuration Single Package SC-7 SOT-33 SC-7 Single ( leads) S 4 5 FEATURES
More informationP-Channel 60-V (D-S) MOSFET
New Product P-Channel 60-V (D-S) MOSFET Si309CDS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 60 0.345 at V GS = - 0 V -.6 0.450 at V GS = - 4.5 V -.4 TO-36 (SOT-3).7 nc FEATURES Halogen-free
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET DTS4 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).58 at V GS = V.6.7 at V GS = 4.5 V.6 TO-6 (SOT-). nc FEATURES Halogen-free According to IEC 649-- Definition TrenchFET
More informationP-Channel 2.5-V (G-S) MOSFET
Si3443BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.060 at V GS = - 4.5 V - 4.7-0 0.090 at V GS = -.7 V - 3.8 0.00 at V GS = -.5 V - 3.7 FEATURES Halogen-free According
More informationN- and P-Channel 20-V (D-S) MOSFET
Si557DU N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS R DS(on) (Ω) I D (A) a Q g N-Channel.39 at V GS =.5 V.5 at V GS =.5 V.55 at V GS =. V.7 at V GS = -.5 V - P-Channel -. at V GS = -.5 V -.3
More informationN- and P-Channel 1.8 V (G-S) MOSFET
Si7DH N- and P-Channel.8 V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A). at V GS =. V. N-Channel.8 at V GS =. V.. at V GS =.8 V.. at V GS = -. V -.86 P-Channel -.88 at V GS = -. V -.67.6 at V
More informationP-Channel 8 V (D-S) MOSFET
Si9DS P-Channel 8 V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) - 8. at V GS = - 4.5 V - 6 e.6 at V GS = -.5 V - 6 e.48 at V GS = -.8 V - 5.9.68 at V GS = -.5 V - 5.
More informationComplementary 20 V (D-S) MOSFET
SiDL Complementary V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).9 at V GS =. V. N-Channel.7 at V GS =.7 V..7. at V GS =. V..99 at V GS = -. V -. P-Channel -.6 at V GS = -.7 V
More information