N-Channel 20-V (D-S) MOSFET

Transcription

1 New Product N-Channel 2-V (-S) MOSFET Si3Y PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.).2 at V GS = V 2 3 nc.25 at V GS =.5 V FEATURES Halogen-free According to IEC TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS OR-ing C/C S SO-8 8 S 2 7 S 3 G 5 G Top View S Ordering Information: Si3Y-T-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted Parameter Symbol Limit Unit rain-source Voltage V S 2 Gate-Source Voltage V GS ± 2 V T C = 25 C Continuous rain Current (T J = 5 C) T C = 7 C 37 I T A = 25 C 3 b, c T A = 7 C 2.7 b, c Pulsed rain Current I M 7 A Continuous Source-rain iode Current T C = 25 C 7 T I S A = 25 C 3. b, c Single Pulse Avalanche Current I L =. mh AS 3 Avalanche Energy E AS 5 mj T C = 25 C 7.8 Maximum Power issipation T C = 7 C 5 P T A = 25 C 3.5 b, c W T A = 7 C 2.2 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, d t s R thja C/W Maximum Junction-to-Foot (rain) Steady State R thjf 3 Notes: a. Based on T C = 25 C. b. Surface Mounted on " x " FR board. c. t = s. d. Maximum under Steady State conditions is 8 C/W. ocument Number: 78 S9-39-Rev. A, 2-Feb-9

2 Si3Y New Product SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rain-source Breakdown Voltage V S V GS = V, I = 25 µa 2 V V S Temperature Coefficient ΔV S /T J 9 I = 25 µa V GS(th) Temperature Coefficient ΔV GS(th) /T J - mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 25 µa. 2.2 V Gate-Source Leakage I GSS V S = V, V GS = ± 2 V ± na V S = 2 V, V GS = V Zero Gate Voltage rain Current I SS V S = 2 V, V GS = V, T J = 55 C µa On-State rain Current a I (on) V S 5 V, V GS = V 3 A V GS = V, I = 5 A rain-source On-State Resistance a.55.2 R S(on) V GS =.5 V, I = A Ω Forward Transconductance a g fs V S = V, I = 5 A 85 S ynamic b Input Capacitance C iss 5 Output Capacitance C oss V S = V, V GS = V, f = MHz 285 pf Reverse Transfer Capacitance C rss 55 V S = V, V GS = V, I = 2 A 73 Total Gate Charge Q g 3 5 nc Gate-Source Charge Q gs V S = V, V GS =.5 V, I = 2 A Gate-rain Charge Q gd 9 Gate Resistance R g f = MHz Ω Turn-On elay Time t d(on) 3 Rise Time t r V = V, R L = Ω 2 5 Turn-Off elay Time t d(off) I A, V GEN =.5 V, R g = Ω 5 9 Fall Time t f 23 Turn-On elay Time t d(on) 3 25 ns Rise Time t r V = V, R L = Ω 22 Turn-Off elay Time t d(off) I A, V GEN = V, R g = Ω 3 7 Fall Time t f 9 8 rain-source Body iode Characteristics Continuous Source-rain iode Current I S T C = 25 C 7 Pulse iode Forward Current a I SM 7 A Body iode Voltage V S I S = 2 A.9. V Body iode Reverse Recovery Time t rr 3 7 ns Body iode Reverse Recovery Charge Q rr 2 3 nc I F = A, di/dt = A/µs, T J = 25 C Reverse Recovery Fall Time t a 5.5 ns Reverse Recovery Rise Time t b 5.5 Notes a. Pulse test; pulse width 3 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 ocument Number: 78 S9-39-Rev. A, 2-Feb-9

3 New Product Si3Y TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 7 5 V GS =thru 3 V 8 I - rain Current (A) 2 28 I - rain Current (A) 2 T C = 25 C T C = 25 C V S - rain-to-source Voltage (V) Output Characteristics.3 T C = - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics - On-Resistance (Ω) R S(on) V GS =.5V V GS =V C - Capacitance (pf) C iss C oss C rss I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage V S - rain-to-source Voltage (V) Capacitance.8 - Gate-to-Source Voltage (V) 8 I =2A V S =V V S =5V V S =5V R S(on) - On-Resistance (Normalized)...2. I =5A V GS =V V GS =.5V V GS Q g - Total Gate Charge (nc) Gate Charge T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature ocument Number: 78 S9-39-Rev. A, 2-Feb-9 3

4 Si3Y New Product TYPICAL CHARACTERISTICS 25 C, unless otherwise noted.5 I =5A - Source Current (A) I S.. T J = 5 C T J = 25 C - On-Resistance (Ω) R S(on) T J = 25 C V S -Source-to-rain Voltage (V) Source-rain iode Forward Voltage.5 T J =25 C V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 2.2 Variance (V) V GS(th) I = 25 µa I =5mA Power (W) T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient Limited by R S(on) * ms - rain Current (A) I. T A = 25 C Single Pulse BVSS Limited ms ms s s C... V S - rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient ocument Number: 78 S9-39-Rev. A, 2-Feb-9

5 New Product Si3Y TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 5 I - rain Current (A) T C - Case Temperature ( C) Current erating* Power (W) Power (W) T C - Case Temperature ( C) Power erating, Junction-to-Case T A -Ambient Temperature ( C) Power erating, Junction-to-Ambient * The power dissipation P is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. ocument Number: 78 S9-39-Rev. A, 2-Feb-9 5

6 Si3Y New Product TYPICAL CHARACTERISTICS 25 C, unless otherwise noted uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2 Notes:.. P M.5 t t 2 t. uty Cycle, =.2 t 2 2. Per Unit Base = R thja = 8 C/W 3. T JM -T A =P M Z (t) thja Single Pulse. Surface Mounted Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Normalized Effective Transient Thermal Impedance. uty Cycle = Single Pulse -3-2 Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?78. ocument Number: 78 S9-39-Rev. A, 2-Feb-9

7 Package Information SOIC (NARROW): 8-LEA JEEC Part Number: MS E H 2 3 S A.25 mm (Gage Plane) h x 5 C All Leads e B A L q. mm." MILLIMETERS INCHES IM Min Max Min Max A A B C E e.27 BSC.5 BSC H h L q 8 8 S ECN: C-527-Rev. I, -Sep- WG: 598 ocument Number: 792 -Sep-

8 VISHAY SILICONIX TrenchFET Power MOSFETs Application Note 88 Mounting LITTLE FOOT, SO-8 Power MOSFETs Wharton Mcaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 82, Recommended Minimum Pad Patterns With Outline rawing Access for MOSFETs, ( for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. In the case of the SO-8 package, the thermal connections are very simple. Pins 5,, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are.2 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board Figure. Single MOSFET SO-8 Pad Pattern With Copper Spreading Figure 2. ual MOSFET SO-8 Pad Pattern With Copper Spreading The minimum recommended pad patterns for the single-mosfet SO-8 with copper spreading (Figure ) and dual-mosfet SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, thermal connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least.2 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. APPLICATION NOTE ocument Number: 77 Revision: 8-Jun-7

9 Application Note 82 RECOMMENE MINIMUM PAS FOR SO-8.72 (.39).28 (.7) APPLICATION NOTE.7 (.9).2 (.28).52 (3.8).22 (.559).5 (.27) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: Revision: 2-Jan-8

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