Automotive N-Channel 40 V (D-S) 175 C MOSFET

Transcription

1 Automotive N-Channel 40 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 40 R DS(on) ( ) at V GS = 0 V I D (A) 20 Configuration TO-263 Single D FEATURES TrenchFET Power MOSFET Package with Low Thermal Resistance AEC-Q0 Qualified d 00% R g and UIS Tested Material categorization: For definitions of compliance please see G G D S Top View S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-263 -GE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 40 Gate-Source Voltage V GS ± 20 V T Continuous Drain Current a C = 25 C 20 I D T C = 25 C 20 Continuous Source Current (Diode Conduction) a I S 20 A Pulsed Drain Current b I DM 480 Single Pulse Avalanche Current I AS 84 L = 0. mh Single Pulse Avalanche Energy E AS 352 mj T Maximum Power Dissipation b C = 25 C 300 P D T C = 25 C 00 W Operating Junction and Storage Temperature Range T J, T stg - 55 to + 75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c R thja 40 Junction-to-Case (Drain) R thjc 0.5 C/W Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on " square PCB (FR-4 material). d. Parametric verification ongoing. S Rev. A, 09-Apr-2 Document Number: 6380

2 SPECIFICATIONS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = 0, I D = 250 μa V Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250 μa Gate-Source Leakage I GSS V DS = 0 V, V GS = ± 20 V - - ± 00 na Zero Gate Voltage Drain Current I DSS V GS = 0 V V DS = 40 V, T J = 25 C μa V GS = 0 V V DS = 40 V - - V GS = 0 V V DS = 40 V, T J = 75 C On-State Drain Current a I D(on) V GS = 0 V V DS 5 V A Notes a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = 0 V I D = 30 A Drain-Source On-State Resistance a R DS(on) V GS = 0 V I D = 30 A, T J = 25 C V GS = 0 V I D = 30 A, T J = 75 C Forward Transconductance b g fs V DS = 5 V, I D = 30 A S Dynamic b Input Capacitance C iss Output Capacitance C oss V GS = 0 V V DS = 25 V, f = MHz pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g Gate-Source Charge c Q gs V GS = 0 V V DS = 0 V, I D = 6 A nc Gate-Drain Charge c Q gd Gate Resistance R g f = MHz Turn-On Delay Time c t d(on) Rise Time c t r V DD = 20 V, R L = Turn-Off Delay Time c t d(off) I D 20 A, V GEN = 0 V, R g = ns Fall Time c t f Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM A Forward Voltage V SD I F = 85 A, V GS = V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S Rev. A, 09-Apr-2 2 Document Number: 6380

3 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) V GS =0Vthru5V I D - Drain Current (A) I D - Drain Current (A) T C = 25 C V GS =4V V DS - Drain-to-Source Voltage (V) T C = 25 C T C = - 55 C V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Transconductance (S) g fs T C = 25 C T C = - 55 C T C = 25 C R DS(on) - On-Resistance (Ω) V GS = 0 V I D - Drain Current (A) Transconductance I D - Drain Current (A) On-Resistance vs. Drain Current C iss I D =6A C - Capacitance (pf) C oss V GS - Gate-to-Source Voltage (V) V DS =0V 000 C rss V DS - Drain-to-Source Voltage (V) Capacitance Q g - Total Gate Charge (nc) Gate Charge S Rev. A, 09-Apr-2 3 Document Number: 6380

4 TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) R DS(on) - On-Resistance (Normalized) I D = 30 A V GS = 0 V I S - Source Current (A) T J = 50 C T J = 25 C T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage R DS(on) - On-Resistance (Ω) T J = 25 C T J = 50 C V GS(th) Variance (V) I D = 250 μa I D =5mA V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage T J - Temperature ( C) Threshold Voltage V DS - Drain-Source Breakdown I D =0mA T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature S Rev. A, 09-Apr-2 4 Document Number: 6380

5 THERMAL RATINGS (T A = 25 C, unless otherwise noted) μs 00 I DM Limited ms I D - Drain Current (A) 0 Limited by R DS(on) * I D Limited 0 ms 00 ms, s, 0 s, DC 0. T C = 25 C Single Pulse BVDSS Limited V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S Rev. A, 09-Apr-2 5 Document Number: 6380

6 THERMAL RATINGS (T A = 25 C, unless otherwise noted) Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 C) - Normalized Transient Thermal Impedance Junction to Case (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x 0.062", double sided with 2 oz. copper, 00 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S Rev. A, 09-Apr-2 6 Document Number: 6380

7 Ordering Information D 2 PAK / TO-263 and TO-262 Ordering codes for the SQ rugged series power MOSFETs in the D 2 PAK / TO-263 and TO-262 packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQM00N04-2m7 SQM00N04-2M7-GE3 SQM00N04-2M7_GE3 SQM00N0-0 SQM00N0-0-GE3 SQM00N0-0_GE3 SQM0N05-06L SQM0N05-06L-GE3 SQM0N05-06L_GE3 SQM0P06-8m9L SQM0P06-8M9L-GE3 SQM0P06-8M9L_GE3 SQM20N02-m3L SQM20N02-M3L-GE3 SQM20N02-M3L_GE3 SQM20N03-m5L SQM20N03-M5L-GE3 SQM20N03-M5L_GE3 SQM20N04-m7 SQM20N04-M7-GE3 SQM20N04-M7_GE3 SQM20N04-m7L SQM20N04-M7L-GE3 SQM20N04-M7L_GE3 SQM20N04-M9-GE3 SQM20N04-M9_GE3 SQM20N06-06 SQM20N06-06-GE3 SQM20N06-06_GE3 SQM20N06-3m5L SQM20N06-3M5L-GE3 SQM20N06-3M5L_GE3 SQM20N0-09 SQM20N0-09-GE3 SQM20N0-09_GE3 SQM20N0-3m8 SQM20N0-3M8-GE3 SQM20N0-3M8_GE3 SQM20P04-04L SQM20P04-04L-GE3 SQM20P04-04L_GE3 SQM20P06-07L SQM20P06-07L-GE3 SQM20P06-07L_GE3 SQM200N04-mL SQM200N04-ML-GE3 SQM200N04-ML_GE3 SQM200N04-m7L SQM200N04-M7L-GE3 SQM200N04-M7L_GE3 SQM200N04-m8 SQM200N04-M8-GE3 SQM200N04-M8_GE3 SQM25N5-52 SQM25N5-52-GE3 SQM25N5-52_GE3 SQM35N30-97 SQM35N30-97-GE3 SQM35N30-97_GE3 SQM40N0-30 SQM40N0-30-GE3 SQM40N0-30_GE3 SQM40N5-38 SQM40N5-38-GE3 SQM40N5-38_GE3 SQM40P0-40L SQM40P0-40L-GE3 SQM40P0-40L_GE3 SQM47N0-24L SQM47N0-24L-GE3 SQM47N0-24L_GE3 SQM50020EL - SQM50020EL_GE3 SQM50N04-4m0L SQM50N04-4M0L-GE3 SQM50N04-4M0L_GE3 SQM50N04-4m SQM50N04-4M-GE3 SQM50N04-4M_GE3 SQM50P03-07 SQM50P03-07-GE3 SQM50P03-07_GE3 SQM50P04-09L SQM50P04-09L-GE3 SQM50P04-09L_GE3 SQM50P06-5L SQM50P06-5L-GE3 SQM50P06-5L_GE3 SQM50P08-25L SQM50P08-25L-GE3 SQM50P08-25L_GE3 SQM60N06-5 SQM60N06-5-GE3 SQM60N06-5_GE3 SQM60N20-35 SQM60N20-35-GE3 SQM60N20-35_GE3 SQM85N5-9 SQM85N5-9-GE3 SQM85N5-9_GE3 SQV20N0-3m8 SQV20N0-3m8-GE3 SQV20N0-3m8_GE3 SQV20N06-4m7L - SQV20N06-4m7L_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 5-Oct-5 Document Number: 6764

8 TO-263 (D 2 PAK): 3-LEAD Package Information -B- E -A- L2 A c2 D4 D2 D3 E K 6 E3 D L3 L D A A e b2 b Detail A c E M A M 2 PL 0-5 L L4 DETAIL A (ROTATED 90 ) M b b SECTION A-A Notes. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. c c c* INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A b b b Thin lead Thick lead c Thin lead Thick lead c D D D D D E E E E e 0.00 BSC 2.54 BSC K L L L L L BSC BSC M ECN: T Rev. K, 30-Sep-3 DWG: 5843 Revison: 30-Sep-3 Document Number: 798

9 AN826 RECOMMENDED MINIMUM PADS FOR D 2 PAK: 3-Lead (0.668) (6.29) (9.07) 0.45 (3.683) 0.35 (3.429) (5.080) (.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: Apr-05

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