Automotive N-Channel 60 V (D-S) 175 C MOSFET

Transcription

1 Automotive N-Channel 6 V (D-S) 175 C MOSFET SQD5N6-9L PRODUCT SUMMARY V DS (V) 6 R DS(on) ( ) at V GS = 1 V.9 R DS(on) ( ) at V GS = 4.5 V.13 I D (A) 5 Configuration TO-252 Single D FEATURES Halogen-free According to IEC Definition TrenchFET Power MOSFET 1% R g and UIS Tested Compliant to RoHS Directive 22/95/EC AEC-Q11 Qualified d G G D S Drain Connected to Tab S Top View N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free TO-252 SQD5N6-9L-GE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 6 Gate-Source Voltage V GS ± 2 V Continuous Drain Current T C = 25 C a 5 I D T C = 125 C 49 Continuous Source Current (Diode Conduction) a I S 5 A Pulsed Drain Current b I DM 2 Single Pulse Avalanche Energy I AS 48 L =.1 mh Single Pulse Avalanche Current E AS 115 mj T Maximum Power Dissipation b C = 25 C 136 P D T C = 125 C 45 W Operating Junction and Storage Temperature Range T J, T stg - 55 to C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c R thja 5 Junction-to-Case (Drain) R thjc 1.1 C/W Notes a. Package limited. b. Pulse test; pulse width 3 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S Rev. B, 24-Oct-11 1 Document Number: 6891 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 SQD5N6-9L SPECIFICATIONS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 μa V Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25 μa Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V - - ± 1 na Zero Gate Voltage Drain Current I DSS V GS = V V DS = 6 V, T J = 125 C μa V GS = V V DS = 6 V V GS = V V DS = 6 V, T J = 175 C On-State Drain Current a I D(on) V GS = 1 V V DS 5 V A Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = 1 V I D = 2 A Drain-Source On-State Resistance a R DS(on) V GS = 1 V I D = 2 A, T J = 125 C V GS = 1 V I D = 2 A, T J = 175 C V GS = 4.5 V I D = 1 A Forward Transconductance b g fs V DS = 15 V, I D = 2 A S Dynamic b Input Capacitance C iss Output Capacitance C oss V GS = V V DS = 25 V, f = 1 MHz pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g Gate-Source Charge c Q gs V GS = 1 V V DS = 3 V, I D = 5 A nc Gate-Drain Charge c Q gd Gate Resistance R g f = 1 MHz Turn-On Delay Time c t d(on) Rise Time c t r V DD = 3 V, R L = Turn-Off Delay Time c t d(off) I D 5 A, V GEN = 1 V, R g = ns Fall Time c t f Source-Drain Diode Ratings and Characteristics b Pulsed Current a I SM A Forward Voltage V SD I F = 2 A, V GS = V V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S Rev. B, 24-Oct-11 2 Document Number: 6891 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 SQD5N6-9L TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) V GS =1Vthru5V 8 I D - Drain Current (A) V GS =4V V GS =3V V GS =2V I D - Drain Current (A) 6 4 T C = 25 C 2 T C = 125 C T C = - 55 C V DS - Drain-to-Source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics 1 12 I D - Drain Current (A) T C = 25 C - Transconductance (S) T C = 25 C T C = - 55 C 2 T C = 125 C g fs 2 T C = 125 C T C = - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics I D - Drain Current (A) Transconductance 4 R DS(on) - On-Resistance (Ω) V GS =4.5V V GS =1V C - Capacitance (pf) C iss C oss I D - Drain Current (A) On-Resistance vs. Drain Current C rss V DS - Drain-to-Source Voltage (V) Capacitance S Rev. B, 24-Oct-11 3 Document Number: 6891 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 SQD5N6-9L TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) I D =5A I D =2A V GS - Gate-to-Source Voltage (V) V DS =3V R DS(on) - On-Resistance (Normalized) V GS =1V V GS =4.5V Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.5 I S - Source Current (A) T J = 15 C T J = 25 C R DS(on) - On-Resistance (Ω) T J = 125 C T J = 25 C V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage.5 75 I D =1mA V GS(th) Variance (V) I D = 25 μa I D =5mA V DS - Drain-to-Source Voltage (V) T J - Temperature ( C) Threshold Voltage T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature S Rev. B, 24-Oct-11 4 Document Number: 6891 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 SQD5N6-9L THERMAL RATINGS (T A = 25 C, unless otherwise noted) 1 I DM Limited I D - Drain Current (A) Limited by R DS(on)* I D Limited 1 µs 1 ms 1 ms 1 ms, 1 s, 1 s, DC.1 T C = 25 C Single Pulse V DS - Drain-to-Source Voltage (V) * V GS minimum V GS at which R DS(on) is specified Safe Operating Area BVDSS Limited 2 Normalized Effective Transient Thermal Impedance 1.1 Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 1 S Rev. B, 24-Oct-11 5 Document Number: 6891 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 SQD5N6-9L THERMAL RATINGS (T A = 25 C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1.1 Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Case (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x.62", double sided with 2 oz. copper, 1 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S Rev. B, 24-Oct-11 6 Document Number: 6891 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Ordering Information DPAK / TO-252 and Reverse DPAK Ordering codes for the SQ rugged series power MOSFETs in the DPAK / TO-252 and Reverse DPAK packages: DATASHEET PART NUMBER OLD ORDERING CODE a NEW ORDERING CODE SQD7N25-35H SQD7N25-35H-GE3 SQD7N25-35H_GE3 SQD1N2-3m5L - SQD1N2-3m5L_GE3 SQD1N3-3m2L SQD1N3-3M2L-GE3 SQD1N3-3M2L_GE3 SQD1N3-3m4 SQD1N3-3M4-GE3 SQD1N3-3M4_GE3 SQD1N4-3m6 SQD1N4-3M6-GE3 SQD1N4-3M6_GE3 SQD1N4-3m6L SQD1N4-3M6L-GE3 SQD1N4-3M6L_GE3 SQD1N3-33H SQD1N3-33H-GE3 SQD1N3-33H_GE3 SQD15N6-42L SQD15N6-42L-GE3 SQD15N6-42L_GE3 SQD19P6-6L SQD19P6-6L-GE3 SQD19P6-6L_GE3 SQD23N6-31L SQD23N6-31L-GE3 SQD23N6-31L_GE3 SQD25N6-22L SQD25N6-22L-GE3 SQD25N6-22L_GE3 SQD25N15-52 SQD25N15-52-GE3 SQD25N15-52_GE3 SQD3N5-2L SQD3N5-2L-GE3 SQD3N5-2L_GE3 SQD4N6-14L SQD4N6-14L-GE3 SQD4N6-14L_GE3 SQD4N1-25 SQD4N1-25-GE3 SQD4N1-25_GE3 SQD4P1-4L SQD4P1-4L-GE3 SQD4P1-4L_GE3 SQD45P3-12 SQD45P3-12-GE3 SQD45P3-12_GE3 SQD5N4-5m6 SQD5N4-5M6-GE3 SQD5N4-5M6_GE3 SQD5N4-5m6L - SQD5N4-5m6L_GE3 SQD5N5-11L SQD5N5-11L-GE3 SQD5N5-11L_GE3 SQD5N6-9L SQD5N6-9L-GE3 SQD5N6-9L_GE3 SQD5N1-8m9L SQD5N1-8M9L-GE3 SQD5N1-8M9L_GE3 SQD5P3-7 SQD5P3-7-GE3 SQD5P3-7_GE3 SQD5P4-13L SQD5P4-13L-GE3 SQD5P4-13L_GE3 SQD5P4-9L SQD5P4-9L-GE3 SQD5P4-9L_GE3 SQD5P6-15L SQD5P6-15L-GE3 SQD5P6-15L_GE3 SQD5P8-25L SQD5P8-25L-GE3 SQD5P8-25L_GE3 SQD5P8-28 SQD5P8-28-GE3 SQD5P8-28_GE3 SQD714EL - SQD714EL_GE3 SQD9P4-9m4L SQD9P4-9M4L-GE3 SQD9P4-9M4L_GE3 SQD97N6-6m3L SQD97N6-6M3L-GE3 SQD97N6-6M3L_GE3 SQR4N1-25 SQR4N1-25-GE3 SQR4N1-25_GE3 SQR5N4-3m8 SQR5N4-3M8-GE3 SQR5N4-3M8_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 1-Jul-16 1 Document Number: For technical questions, contact: automostechsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 Package Information TO-252AA Case Outline E b3 A C2 MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. L3 A A b b D H b C C b e1 e b2 L4 L5 gage plane height (.5 mm) C A1 L D D E E H e 2.28 BSC.9 BSC e BSC.18 BSC L L D1 L L E1 ECN: T Rev. A, 2-Sep-13 DWG: 619 Note Dimension L3 is for reference only. Revision: 2-Sep-13 1 Document Number: For technical questions, contact: pmostechsupport@vishay.com ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Application Note 826 RECOMMENDED MINIMUM PADS FOR DPAK (TO-252).224 (5.69).9 (2.286).87 (2.22).42 (1.668).243 (6.18).18 (4.572).55 (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: Revision: 21-Jan-8 3

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11 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: SQD5N6-9L-GE3 SQD5N6-9L_GE3