AUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 2.2 R JA Junction-to-Ambient ( PCB Mount) 50 C/W

Transcription

1 Features dvanced Planar Technology Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated Repetitive valanche llowed up to Tjmax Lead-Free, RoHS Compliant utomotive Qualified * UTOMOTIVE GRDE Description Specifically designed for utomotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in utomotive and a wide variety of other applications. V DSS UIRFR45 55V R DS(on) max. 45m I D (Silicon Limited) I D (Package Limited) D HEXFET Power MOSFET G D-Pak UIRFR G D S Gate Drain Source S Base part number UIRFR45 Package Type D-Pak Standard Pack Form Quantity Orderable Part Number Tube 75 UIRFR45 Tape and Reel Left 3000 UIRFR45TRL bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T) is 25 C, unless otherwise specified. Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 27 I T C = 0 C Continuous Drain Current, V V (Silicon Limited) 9 I T C = 25 C Continuous Drain Current, V V (Package Limited) 20 I DM Pulsed Drain Current 0 P C = 25 C Maximum Power Dissipation 68 W Linear Derating Factor 0.45 W/ C V GS Gate-to-Source Voltage ± 20 V E S Single Pulse valanche Energy (Thermally Limited) 65 E S (Tested) Single Pulse valanche Energy Tested Value 6 mj I R valanche Current 6.8 E R Repetitive valanche Energy 5.0 mj T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds (.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 2.2 R J Junction-to-mbient ( PCB Mount) 50 C/W R J Junction-to-mbient HEXFET is a registered trademark of Infineon. *Qualification standards can be found at

2 T J = 25 C (unless otherwise specified) UIRFR45 Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µ V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = m R DS(on) Static Drain-to-Source On-Resistance 45 m V GS = V, I D = 6 V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ gfs Forward Trans conductance 6.5 S V DS = 25V, I D = 6 I DSS Drain-to-Source Leakage Current 25 V µ DS = 55V, V GS = 0V 250 V DS = 44V,V GS = 0V,T J =50 C Gate-to-Source Forward Leakage 0 V I GSS n GS = 20V Gate-to-Source Reverse Leakage -0 V GS = -20V Dynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge 34 I D = 6 Q gs Gate-to-Source Charge 6.8 nc V DS = 44V Q gd Gate-to-Drain Charge 4 V GS = V, See Fig. 6 &3 t d(on) Turn-On Delay Time 7.0 V DD = 28V t r Rise Time 49 I D = 6 ns t d(off) Turn-Off Delay Time 3 R G = 8 t f Fall Time 40 R D =.8,See Fig. Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 240 pf V DS = 25V C rss Reverse Transfer Capacitance 0 ƒ =.0MHz, See Fig.5 Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S 27 (Body Diode) showing the Pulsed Source Current integral reverse I SM 0 (Body Diode) p-n junction diode. V SD Diode Forward Voltage.6 V T J = 25 C,I S = 6, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C,I F = 6 Q rr Reverse Recovery Charge nc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. ) V DD = 25V,, starting T J = 25 C, L = 4µH, R G = 25, I S = 6, V GS =V. (See fig. 2) I SD 6, di/dt 420/µs, V DD V (BR)DSS, T J 75 C. Pulse width 300µs; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 20. Limited by T Jmax, see Fig.2a, 2b, 5, 6 for typical repetitive avalanche performance. R is measured at T J approximately 90 C. When mounted on " square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #N

3 UIRFR45 I, Drain-to-Source Current () D 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I, Drain-to-Source Current () D 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH 0. T C = 25 C 0. 0 V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH 0. T C = 75 C 0. 0 V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics I D, Drain-to-Source Current () 0 T = 25 C J T = 75 C J V DS = 25V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D = 26 V GS = V T J, Junction Temperature ( C) Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance Vs. Temperature

4 UIRFR45 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTED C rss = Cgd C iss C oss = C ds + Cgd C oss C rss 0 0 V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage V, Gate-to-Source Voltage (V) GS I D = 6 V DS = 44V V DS = 28V FOR TEST CIRCUIT 0 SEE FIGURE Q, Total Gate Charge (nc) G Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage I SD, Reverse Drain Current () 00 0 T = 75 C J T = 25 C J V GS = 0V V SD, Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage I D, Drain Current () 00 OPERTION IN THIS RE LIMITED BY RDS(on) 0 µs 0µs ms T C = 25 C T J = 75 C Single Pulse 0 V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating rea

5 UIRFR LIMITED BY PCKGE I D, Drain Current () 20 5 Fig a. Switching Time Test Circuit T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6 UIRFR45 5V V L DS R G D.U.T I S 20V tp 0.0 DRIVER + - V DD Fig 2a. Unclamped Inductive Test Circuit E S, Single Pulse valanche Energy (mj) I D TOP 6.5 BOTTOM 6 V DD = 25V Starting T J, Junction Temperature ( C) tp V (BR)DSS Fig 2c. Maximum valanche Energy vs. Drain Current I S Fig 2b. Unclamped Inductive Waveforms Vds Id Vgs Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 3a. Gate Charge Waveform Fig 3b. Gate Charge Test Circuit

7 UIRFR45 Fig 4. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs

8 UIRFR45 D-Pak (TO-252) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252) Part Marking Information Part Number IR Logo UFR45 YWW XX XX Date Code Y= Year WW= Work Week Lot Code Note: For the most current drawing please refer to IR website at

9 UIRFR45 D-Pak (TO-252) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EI-48 & EI INCH NOTES :. OUTLINE CONFORMS TO EI mm Note: For the most current drawing please refer to IR website at

10 UIRFR45 Qualification Information utomotive (per EC-Q) Qualification Level Comments: This part number(s) passed utomotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level D-Pak MSL Machine Model Class M2 (+/- 200V) EC-Q-002 ESD Human Body Model Class HB (+/- 900V) EC-Q-00 Charged Device Model Class C5 (+/- 25V) EC-Q-005 RoHS Compliant Yes Highest passing voltage. Revision History Date Updated datasheet with corporate template 2//205 Corrected ordering table on page. Comments Published by Infineon Technologies G 8726 München, Germany Infineon Technologies G 205 ll Rights Reserved. IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WRNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury