IRFHM9331PbF. HEXFET Power MOSFET. V DS -30 V R DS(on) max mω. Q g (typical) 32 nc I D -11 A. Absolute Maximum Ratings

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1 P 9633 HEXFET Power MOFET V 3 V R (on) max (@V G = V) 4.6 mω Q g (typical) 32 nc I (@T A = 25 C) A G G 3mm x 3mm PQFN Applications l ystem/load switch Features and Benefits Features Benefits Low Thermal Resistance to PCB (<6. C/W) Enable better thermal dissipation Compatible with Existing urface Mount Techniques results in Easier Manufacturing RoH Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier ML, Consumer Qualification Increased Reliability Orderable part number Package Type tandard Pack Form Quantity IRFHM933TRPBF PQFN 3mm x 3mm Tape and Reel 4 Note Absolute Maximum Ratings Parameter V raintoource Voltage V G Gatetoource Voltage T A = 25 C Continuous rain Current, V V T A = 7 C Continuous rain Current, V V T C = 25 C Continuous rain Current, V V T C = 7 C Continuous rain Current, V V I M Pulsed rain Current c A = 25 C Power issipation f T A = 7 C Power issipation f T J T TG Linear erating Factor Operating Junction and torage Temperature Range Max. 3 ± i to 5 Units V A W W/ C C Notes through are on page 2 6/3/

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV raintoource Breakdown Voltage 3 V ΒV / T J Breakdown Voltage Temp. Coefficient.2 V/ C R (on). tatic raintoource OnResistance mω V G(th) Gate Threshold Voltage V V G(th) Gate Threshold Voltage Coefficient 5. mv/ C I I G raintoource Leakage Current Gatetoource Forward Leakage. Gatetoource Reverse Leakage 5 µa µa gfs Forward Transconductance 6 V = V, I = 9.A Q g Total Gate Charge h 6 nc V = 5V,V G = 4.5V,I = 9.A Q g Total Gate Charge h V G = V Q gs Gatetoource Charge h 4.4 nc V = 5V Q gd Gatetorain Charge h 8 I = 9.A R G Gate Resistance h 6 Ω t d(on) TurnOn elay Time V = 5V, V G = 4.5V e t r Rise Time 27 I =.A ns t d(off) TurnOff elay Time 72 R G = 6.8Ω t f Fall Time 6 ee Figs. 9a & 9b C iss Input Capacitance 543 V G = V C oss Output Capacitance 3 pf V = 25V C rss Reverse Transfer Capacitance 28 ƒ =.KHz Avalanche Characteristics Parameter Typ. Max. Units E A ingle Pulse Avalanche Energy d 76 mj I AR Avalanche Current c 9. A iode Characteristics Parameter Min. Typ. Max. Units I Continuous ource Current (Body iode) 2.8 I M Pulsed ource Current (Body iode)c 9 A V iode Forward Voltage.2 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc Thermal Resistance Conditions V G = V, I = 25µA Reference to 25 C, I = ma V G = 2V, I = A e V G = V, I = A e V = V G, I = 25µA V = 24V, V G = V V = 24V, V G = V, T J = 25 C V G = 25V V G = 25V Conditions MOFET symbol showing the G integral reverse pn junction diode. T J = 25 C, I = 2.8A, V G = V e T J = 25 C, I F = 2.8A, V = 24V di/dt = /µs e Parameter Typ. Max. Units R θjc JunctiontoCase g 6 R θja JunctiontoAmbient f 45 C/W R θja JunctiontoAmbient (t<s) f 3 Notes: Repetitive rating; pulse width limited by max. junction temperature. tarting T J = 25 C, L =.94mH, R G = 5Ω, I A = 9A. ƒ Pulse width 4µs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J of approximately 9 C. For EIGN AI ONLY, not subject to production testing. Current limited by package.. 2

3 C, Capacitance (pf) V G, Gatetoource Voltage (V) I, raintoource Current (A) R (on), raintoource On Resistance (Normalized) I, raintoource Current (A) I, raintoource Current (A) VG TOP V 5.V 4.5V 3.5V 3.3V 3.V 2.9V BOTTOM 2.7V 6µs PULE WITH Tj = 5 C VG TOP V 5.V 4.5V 3.5V 3.3V 3.V 2.9V BOTTOM 2.7V 2.7V 2.7V 6µs PULE WITH Tj = 25 C.. V, raintoource Voltage (V) Fig. Typical Output Characteristics. V, raintoource Voltage (V) Fig 2. Typical Output Characteristics.6 I = A V G = V.4 T J = 5 C T J = 25 C V = 5V 6µs PULE WITH V G, Gatetoource Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V G = V, f = KHZ C iss = C gs C gd, C ds HORTE C rss = C gd C oss = C ds C gd 4 2 I = 9A V = 24V V = 5V V= 6V C iss 8 6 C oss C rss V, raintoource Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs.raintoource Voltage Fig 6. Typical Gate Charge vs.gatetoource Voltage 3

4 I, V G(th), rain Current (A) Gate threshold Voltage (V) I, Reverse rain Current (A) I, raintoource Current (A) OPERATION IN THI AREA LIMITE BY R (on) µsec msec T J = 5 C T J = 25 C C msec V G = V V, ourcetorain Voltage (V) Fig 7. Typical ourcerain iode Forward Voltage 2. Tj = 5 C ingle Pulse. V, raintoource Voltage (V) Fig 8. Maximum afe Operating Area 2.5 T A = 25 C I = 25uA T A, Ambient Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum rain Current vs. Ambient Temperature Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thja ) C/W = INGLE PULE ( THERMAL REPONE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja T A. E6 E5.... t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoAmbient 4

5 E A, ingle Pulse Avalanche Energy (mj) Power (W) R (on), rainto ource On Resistance (mω) R (on), rainto ource On Resistance (m Ω) 3 I = A T J = 25 C Vgs = 4.5V T J = 25 C 2 Vgs = V V G, Gate to ource Voltage (V) Fig 2. OnResistance vs. Gate Voltage I, rain Current (A) Fig 3. Typical OnResistance vs. rain Current I TOP.9A 2.9A BOTTOM 9.A tarting T J, Junction Temperature ( C) Fig 4. Maximum Avalanche Energy vs. rain Current E5 E4 E3 E2 E E Time (sec) Fig 5. Typical Power vs. Time.U.T * ƒ Circuit Layout Considerations Low tray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current river Gate rive Period P.W..U.T. I Waveform Body iode Forward Current di/dt.u.t. V Waveform iode Recovery dv/dt = P.W. Period V G =V V * R G di/dt controlled by R G river same type as.u.t. I controlled by uty Factor "".U.T. evice Under Test V ReApplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I * Reverse Polarity of.u.t for PChannel * V G = 5V for Logic Level evices Fig 6. iode Reverse Recovery Test Circuit for PChannel HEXFET Power MOFETs 5

6 Id Vds Vgs 2K K UT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 7a. Gate Charge Test Circuit Fig 7b. Gate Charge Waveform V L I A R G.U.T V V 2V G tp IA.Ω RIVER A tp V (BR) 5V Fig 8a. Unclamped Inductive Test Circuit Fig 8b. Unclamped Inductive Waveforms R V R G V G.U.T. V G t d(on) t r t d(off) t f % V V G Pulse Width µs uty Factor. % 9% V Fig 9a. witching Time Test Circuit Fig 9b. witching Time Waveforms 6

7 PQFN Package etails PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 ATE COE AEMBLY ITE COE (Per COP 22) PIN IENTIFIER XXXX XYWWX XXXXX PART NUMBER MARKING COE (Per Marking pec.) LOT COE (Eng Mode Min. last 4 digits of EATI #) (Prod Mode 4 digits PN code) TOP MARKING (LAER) Note: For the most current drawing please refer to IR website at: 7

8 PQFN Tape and Reel Qualification information Qualification level Moisture ensitivity Level RoH compliant Cons umer (per JEEC JE 47F guidelines ) M L PQFN 3mm x 3mm (per IPC/JEE C J T 2 ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: Applicable version of JEEC standard at the time of product release. ata and specifications subject to change without notice. IR WORL HEAQUARTER: 233 Kansas t., El egundo, California 9245, UA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.6/2 8