Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V
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1 General escription These N-Channel enhancement mode power field effect transistors are using trench MO technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. BV RON I 30V 6m 20A Features 30V, 20A, R(ON)=6mΩ@VG = 0V Improved dv/dt capability Fast switching Green evice Available OP8 Pin Configuration Applications Notebook Load witch LE applications Hand-Held evice G G Absolute Maximum Ratings Tc=25 unless otherwise noted ymbol Parameter Rating Units V rain-ource Voltage 30 V V G Gate-ource Voltage ±20 V I rain Current Continuous (T C=25 ) 20 A rain Current Continuous (T C=00 ) 2.6 A I M rain Current Pulsed 80 A P Power issipation (T C=25 ) 5.4 W Power issipation erate above W/ T TG torage Temperature Range -55 to 50 T J Operating Junction Temperature Range -55 to 50 Thermal Characteristics ymbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction to ambient /W R θjc Thermal Resistance Junction to Case /W
2 Electrical Characteristics (T J =25, unless otherwise noted) Off Characteristics ymbol Parameter Conditions Min. Typ. Max. Unit BV rain-ource Breakdown Voltage V G=0V, I =250uA V BV / T J BV Temperature Coefficient Reference to 25, I =ma V/ I V =30V, V G=0V, T J= ua rain-ource Leakage Current V =24V, V G=0V, T J= ua I G Gate-ource Leakage Current V G=±20V, V =0V ±00 na On Characteristics R (ON) tatic rain-ource On-Resistance V G=0V, I =0A m V G=4.5V, I =5A m V G(th) Gate Threshold Voltage V G=V, I =250uA V V G(th) V G(th) Temperature Coefficient mv/ gfs Forward Transconductance V =0V, I =0A ynamic and switching Characteristics Q g Total Gate Charge 2, Q gs Gate-ource Charge 2, 3 V =5V, V G=4.5V, I =20A nc Q gd Gate-rain Charge 2, T d(on) Turn-On elay Time 2, T r Rise Time 2, 3 V =5V, V G=0V, R G= T d(off) Turn-Off elay Time 2, 3 I =5A ns T f Fall Time 2, C iss Input Capacitance C oss Output Capacitance V =25V, V G=0V, F=MHz pf C rss Reverse Transfer Capacitance R g Gate resistance V G=0V, V =0V, F=MHz rain-ource iode Characteristics and Maximum Ratings ymbol Parameter Conditions Min. Typ. Max. Unit I Continuous ource Current V G=V =0V, Force Current A I M Pulsed ource Current A V iode Forward Voltage V G=0V, I =A, T J= V Note :. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width 300us, duty cycle 2%. 3. Essentially independent of operating temperature. 2
3 I, Continuous rain Current (A) Normalized On Resistance (m ) T C, Case Temperature ( ) Fig. Continuous rain Current vs. T C T J, Junction Temperature ( ) Fig.2 Normalized RON vs. T J Normalized Gate Threshold Voltage (V) T J, Junction Temperature ( ) Fig.3 Normalized V th vs. T J VG, Gate to ource Voltage (V) Qg, Gate Charge (nc) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) I, Continuous rain Current (A) quare Wave Pulse uration (s) Fig.5 Normalized Transient Impedance V, rain to ource Voltage (V) Fig.6 Maximum afe Operation Area 3
4 V 90% EA= 2 L x I A 2 x BV BV -V BV V 0% I A V G T d(on) T r T d(off) T f T on T off V G Fig.7 witching Time Waveform Fig.8 EA Waveform 4
5 OP8 PACKAGE INFORMATION ymbol imensions In Millimeters imensions In Inches MAX MIN MAX MIN A A A b C E E e.27bc 0.05BC L θ
Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
More informationG : GATE S : SOURCE D : DRAIN. Symbol VDS VGS. Avalanche Current EAS EAR TSTG
M25N3Q-HF N-hannel RoH evice Halogen Free Features - ingle rive Requirement..2(5.).5(4.7).(.25).7(.7) - Low On-resistance. - Fast witching haracteristic. - ynamic dv/dt rating..57(4.).5(3.).244(6.2).22(5.)
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P83GMT-HF Halogen-Free Product dvanced Power N-CHNNEL ENHNCEMENT MOE Electronics Corp. POWER MOFET imple rive Requirement BV 3V O-8 Compatible R (ON) 8.5mΩ Low On-resistance I 5 G RoH Compliant escription
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P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.) - 3.65 at V G = - V - 35 nc 8 7 6 PowerPAK O-8 5 6.5 mm 5.5 mm Bottom View 3 G 4 Ordering Information: i7447ap-t-e3 (Lead (Pb)-free)
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Features Product ummary Ultra Low Qg & Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating RoH Compliant G 3 G 5 7 V 5 V Q g 9. nc Q gd.5 nc R (on) =.5V. mω =V 3. mω V th. V Halogen Free
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationSMC4732PA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 60A APPLICATIONS PART NUMBER INFORMATION
MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
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More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
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MC86NA ingle N-Channel MOFET DECRIPTION MC86 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
More informationSymbol. Maximum Drain-Source Voltage 600 Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current B Peak diode recovery dv/dt V DS V GS
6,.34A NChannel MOFET eneral escription The is fabricated using an advanced high voltage MOFET process that is designed to deliver high levels of performance and robustness in popular ACC applications.
More informationV DS I D (at V GS =10V) R DS(ON) (at V GS =10V) < 6.0mΩ (< 5.7mΩ ) R DS(ON) (at V GS =6V) < 7.9mΩ (< 7.6mΩ ) 100% UIS Tested 100% R g Tested G S G
AOT86L/AOB86L 8V NChannel MOSFET eneral escription The AOT86L/AOB86L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction
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Is Now Part of To learn more about ON emiconductor, please visit our website at www.onsemi.com ON emiconductor and the ON emiconductor logo are trademarks of emiconductor Components Industries, LLC dba
More informationFEATURES. Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ± 25
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More informationPin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 33 A TA=70 C 26 A
MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
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General Description Product Summery Description The WSD20L75DN uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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