AUIRF7739L2TR AUIRF7739L2TR1

Transcription

1 Applicable irectfet Outline and ubstrate Outline AUTOMOTIVE GRAE Features Advanced Process Technology Optimized for Automotive Motor rive, C-C and other Heavy Load Applications Exceptionally mall Footprint and Low Profile High Power ensity Low Parasitic Parameters ual ided Cooling 175 C Operating Temperature Repetitive Avalanche Capability for Robustness and Reliability Lead free, RoH Compliant and Halogen free Automotive Qualified* AUIRF7739L2TR AUIRF7739L2TR1 Automotive irectfet Power MOFET V (BR) R (on) typ. max. I (ilicon Limited) Q g irectfet IOMETRIC B C M2 M4 L4 L6 L8 escription The AUIRF7739L2TR(1) combines the latest Automotive HEXFET Power MOFET ilicon technology with the advanced irectfet packaging to achieve the lowest on-state resistance in a package that has the footprint of a Pak (TO-252AA) and only.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN- 35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET Power MOFET is designed for applications where efficiency and power density are essential. The advanced irectfet packaging platform coupled with the latest silicon technology allows the AUIRF7739L2TR(1) to offer substantial system level savings and performance improvement specifically in motor drive, high frequency C-C and other heavy load applications on ICE, HEV and EV platforms. This MOFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOFET are 175 C operating junction temperature and high repetitive peak current capability. These features combine to make this MOFET a highly efficient, robust and reliable device for high current automotive applications. Parameter Typ. Max. Units R JA Junction-to-Ambient e 4 R JA Junction-to-Ambient j 12.5 R JA Junction-to-Ambient k 2 C/W R JCan Junction-to-Can fl 1.2 R J-PCB Junction-to-PCB Mounted.5 Linear erating Factor f.83 W/ C HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at /1/2 L8 4V 7μ μ 27A 22nC Absolute Maximum Ratings tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Parameter Max. Units V rain-to-ource Voltage 4 V V G Gate-to-ource Voltage ± 2 T C = 25 C Continuous rain Current, V V (ilicon Limited)f 27 T C = C Continuous rain Current, V V (ilicon Limited)f 19 A T A = 25 C Continuous rain Current, V V (ilicon Limited)e 46 T C = 25 C Continuous rain Current, V V (Package Limited) 375 I M Pulsed rain Current f 7 C = 25 C Power issipation f 125 A = 25 C Power issipation e 3.8 W E A ingle Pulse Avalanche Energy (Thermally Limited) h 27 mj E A (tested) ingle Pulse Avalanche Energy Tested Value g 16 I AR Avalanche Currentg ee Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy g mj T P Peak oldering Temperature 27 T J Operating Junction and -55 to 175 C torage Temperature Range T TG Thermal Resistance P B

2 tatic T J = 25 C (unless otherwise stated) Parameter Min. Typ. Max. Units V (BR) rain-to-ource Breakdown Voltage 4 V V (BR)/ T J Breakdown Voltage Temp. Coefficient.8 V/ C R (on) tatic rain-to-ource On-Resistance 7 μ V G(th) Gate Threshold Voltage V V G(th)/ T J Gate Threshold Voltage Coefficient -6.7 mv/ C gfs Forward Transconductance 28 R G Gate Resistance 1.5 I rain-to-ource Leakage Current 5. μa 25 I G Gate-to-ource Forward Leakage Gate-to-ource Reverse Leakage - na ynamic T J = 25 C (unless otherwise stated) Parameter Min. Typ. Max. Units Q g Total Gate Charge Conditions V = 2V, V G = V Q gs1 Pre-Vth Gate-to-ource Charge 46 I = 16A Q gs2 Post-Vth Gate-to-ource Charge 19 nc ee Fig. 11 Q gd Gate-to-rain ("Miller") Charge 81 Q godr Gate Charge Overdrive 74 Q sw witch Charge (Q gs2 Q gd) Q oss Output Charge 83 nc t d(on) Turn-On elay Time 21 t r Rise Time 71 ns t d(off) Turn-Off elay Time 56 t f Fall Time 42 C iss Input Capacitance 1188 C oss Output Capacitance 25 C rs s Reverse Transfer Capacitance 124 pf C oss Output Capacitance 86 C oss Output Capacitance 223 C oss eff. Effective Output Capacitance 34 iode T J = 25 C (unless otherwise stated) Parameter Min. Typ. Max. Units I Continuous ource Current 27 (Body iode) A I M Pulsed ource Current 7 (Body iode)ãg V iode Forward Voltage 1.3 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc Conditions V G = V, I = 25μA Reference to 25 C, I = 1mA V G = V, I = 16A i V = V G, I = 25μA V = V, I = 16A V = 4V, V G = V V = 4V, V G = V, T J = 125 C V G = 2V V G = -2V V = 16V, V G = V V = 2V, V G = VÃi I = 16A R G = 1.8 V G = V V = 25V ƒ = 1.MHz V G = V, V = 1.V, f=1.mhz V G = V, V = 32V, f=1.mhz V G = V, V = V to 32V MOFET symbol showing the integral reverse Conditions p-n junction diode. I = 16A, V G = V i I F = 16A, V = 2V di/dt = A/μs i ƒ urface mounted on 1 in. square Cu (still air). Notes through Š are on page Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) 2

3 Qualification Information Automotive (per AEC-Q1) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture ensitivity Level E RoH Compliant Machine Model Human Body Model Charged evice Model FET2 ML1 Class M4 (8V) AEC-Q1-2 Class H3A (7V) AEC-Q1-1 N/A AEC-Q1-5 Yes Qualification standards can be found at International Rectifier s web site: Exceptions to AEC-Q1 requirements are noted in the qualification report. 3

4 I, rain-to-ource Current (A) R (on), rain-to-ource On Resistance (Normalized) R (on), rain-to -ource On Resistance (m ) R (on), rain-to-ource On Resistance (m ) I, rain-to-ource Current (A) I, rain-to-ource Current (A) AUIRF7739L2TR/TR1 VG TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VG TOP 15V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 1 6μs PULE WITH Tj = 25 C 4.5V V, rain-to-ource Voltage (V) Fig 1. Typical Output Characteristics 4.5V 6μs PULE WITH Tj = 175 C.1 1 V, rain-to-ource Voltage (V) Fig 2. Typical Output Characteristics 8 I = 16A V G = V T J = 125 C T J = 25 C V G, Gate -to -ource Voltage (V) Fig 3. Typical On-Resistance vs. Gate Voltage I, rain Current (A) Fig 4. Typical On-Resistance vs. rain Current 2. I = 16A V G = V T J = 175 C 1.5 T J = 25 C 1 1. V = 25V 6μs PULE WITH V T J, Junction Temperature ( C) G, Gate-to-ource Voltage (V) Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature 4

5 V G, Gate-to-ource Voltage (V) I, rain Current (A) G fs, Forward Transconductance () C, Capacitance (pf) V G(th), Gate threshold Voltage (V) I, Reverse rain Current (A) 5. AUIRF7739L2TR/TR T J = 175 C I = 25μA I = 1.mA I = 1.A T J, Temperature ( C ) Fig 7. Typical Threshold Voltage vs. Junction Temperature T J = 25 C T J = 25 C V G = V V, ource-to-rain Voltage (V) Fig 8. Typical ource-rain iode Forward Voltage V G = V, f = 1 MHZ C iss = C gs C gd, C ds HORTE C rss = C gd C oss = C ds C gd 75 T J = 175 C C iss 5 C oss 25 V = V 2μs PULE WITH I,rain-to-ource Current (A) Fig 9. Typical Forward Transconductance vs. rain Current C rss 1 V, rain-to-ource Voltage (V) Fig. Typical Capacitance vs.rain-to-ource Voltage I = 16A V = 32V V = 2V Q G, Total Gate Charge (nc) T C, Case Temperature ( C) Fig.11 Typical Gate Charge vs.gate-to-ource Voltage Fig 12. Maximum rain Current vs. Case Temperature 5

6 I, rain-to-ource Current (A) E A, ingle Pulse Avalanche Energy (mj) AUIRF7739L2TR/TR1 C OPERATION IN THI AREA LIMITE BY R (on) msec 1msec μsec Tc = 25 C Tj = 175 C ingle Pulse 1 1 V, rain-to-ource Voltage (V) Fig 13. Maximum afe Operating Area I TOP 29A 46A BOTTOM 16A tarting T J, Junction Temperature ( C) Fig 14. Maximum Avalanche Energy vs. Temperature Thermal Response ( Z thjc ) C/W = INGLE PULE ( THERMAL REPONE ) R 1 R 1 R 2 R 2 R 3 R 3 J J Ci= i Ri Ci i Ri Notes: 1. uty Factor = t1/t2 2. Peak Tj = P dm x Zthjc Tc.1 1E-6 1E t 1, Rectangular Pulse uration (sec) Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case R 4 R C Ri ( C/W) i (sec) e uty Cycle = ingle Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 15 C and Tstart =25 C (ingle Pulse) Avalanche Current (A).5. 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 15 C..1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 16. Typical Avalanche Current vs.pulsewidth 6

7 E AR, Avalanche Energy (mj) TOP ingle Pulse BOTTOM 1.% uty Cy cle I = 16A tarting T J, Junction Temperature ( C) Fig 17. Maximum Avalanche Energy vs. Temperature AUIRF7739L2TR/TR1 Notes on Repetitive Avalanche Curves, Figures 13, 14: (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. afe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. P (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. = uty cycle in avalanche = t av f Z thjc (, t av ) = Transient thermal resistance, see figure 11) P (ave) = 1/2 ( 1.3 BV I av ) = T/ Z thjc I av = 2T/ [1.3 BV Z th ] E A (AR) = P (ave) t av 15V tp V (BR) V L RIVER R G V G 2V tp.u.t I A.1 - V A I A Fig 18a. Unclamped Inductive Test Circuit Fig 18b. Unclamped Inductive Waveforms Id Vds 2K 1K UT L VCC Vgs Vgs(th) Fig 19a. Gate Charge Test Circuit Qgodr Qgd Qgs2 Qgs1 Fig 19b. Gate Charge Waveform V G V R.U.T. V 9% R G - V V Pulse Width µs uty Factor % V G t d(on) t r t d(off) t f Fig 2a. witching Time Test Circuit Fig 2b. witching Time Waveforms 7

8 - R G.U.T * ƒ - Circuit Layout Considerations Low tray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by RG river same type as.u.t. I controlled by uty Factor "".U.T. - evice Under Test V ** - Reverse Recovery Current Re-Applied Voltage river Gate rive Period P.W..U.T. I Waveform Body iode Forward Current di/dt.u.t. V Waveform iode Recovery dv/dt Inductor Curent Body iode Forward rop = P.W. Period *** V G =V V Ripple 5% I * Use P-Channel river for P-Channel Measurements ** Reverse Polarity for P-Channel *** V G = 5V for Logic Level evices Fig 21. iode Reverse Recovery Test Circuit for HEXFET Power MOFETs Automotive irectfet Board Footprint, L8 (Large ize Can). Please see AN-35 for irectfet assembly details and stencil and substrate design recommendations G = GATE = RAIN = OURCE G Note: For the most current drawing please refer to IR website at 8

9 Automotive irectfet Outline imension, L8 Outline (Largeize Can). Please see AN-35 for irectfet assembly details and stencil and substrate design recommendations Automotive irectfet Part Marking Note: For the most current drawing please refer to IR website at 9

10 Automotive irectfet Tape & Reel imension (howing component orientation). Note: For the most current drawing please refer to IR website at Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the irectfet Website. ƒ urface mounted on 1 in. square Cu board, steady state. T C measured with thermocouple mounted to top (rain) of part. Repetitive rating; pulse width limited by max. junction temperature. tarting T J = 25 C, L =.21mH, R G = 25, I A = 16A. Pulse width 4μs; duty cycle 2%. ˆ Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. Š R is measured at T J of approximately 9 C.

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