AUTOMOTIVE GRADE. 56 I T C = 100 C Continuous Drain Current, V 10V. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)

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1 AUTOMOTIVE GRADE PD AUIRFR37Z Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * G D S V (BR)DSS HEXFET Power MOSFET R DS(on) max. I D (Silicon Limited) I D (Package Limited) V 18mΩ 56A 42A Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S G D-Pak AUIRFR37Z G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 56 I T C = C Continuous Drain Current, V V 39 A I T C = 25 C Continuous Drain Current, V V (Package Limited) 42 I DM Pulsed Drain Current c 220 P C = 25 C Power Dissipation 140 W Linear Derating Factor 0.95 W/ C V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche Energy (Thermally Limited)d 150 mj E AS (tested ) Single Pulse Avalanche Energy Tested Value h 200 I AR Avalanche Currentc See Fig.12a, 12b, 15, 16 A E AR Repetitive Avalanche Energy g mj T J Operating Junction and -55 to T STG Storage Temperature Range C 300 Soldering Temperature, for seconds (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case j 1.05 R θja Junction-to-Ambient (PCB mount) i 50 C/W R θja Junction-to-Ambient 1 HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at //20

2 AUIRFR37Z Static Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage V V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V gfs Forward Transconductance 39 S I DSS Drain-to-Source Leakage Current 20 µa 250 I GSS Gate-to-Source Forward Leakage 200 na Gate-to-Source Reverse Leakage -200 Dynamic Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 69 I D = 33A Q gs Gate-to-Source Charge 15 nc V DS = 80V Q gd Gate-to-Drain ("Miller") Charge 25 V GS = V e t d(on) Turn-On Delay Time 14 V DD = 50V t r Rise Time 43 I D = 33A t d(off) Turn-Off Delay Time 53 ns R G = 6.8 Ω t f Fall Time 42 V GS = V e L D Internal Drain Inductance 4.5 Between lead, nh 6mm (0.25in.) L S Internal Source Inductance 7.5 from package C iss Input Capacitance 2930 C oss Output Capacitance 290 C rss Reverse Transfer Capacitance 180 pf C oss Output Capacitance 1200 C oss Output Capacitance 180 C oss eff. Effective Output Capacitance 430 Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 56 Conditions V GS = 0V, I D = 250µA Reference to 25 C, I D = 1mA V GS = V, I D = 33A e V DS = V GS, I D = 250µA V DS = 25V, I D = 33A V DS = V, V GS = 0V V DS = V, V GS = 0V, T J = 125 C V GS = 20V V GS = -20V and center of die contact V GS = 0V V DS = 25V ƒ = 1.0MHz V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz V GS = 0V, V DS = 80V, ƒ = 1.0MHz V GS = 0V, V DS = 0V to 80V f Conditions MOSFET symbol D (Body Diode) A showing the I SM Pulsed Source Current 220 integral reverse G (Body Diode)Ãc p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 33A, V GS = 0V e t rr Reverse Recovery Time ns T J = 25 C, I F = 33A, V DD = 50V Q rr Reverse Recovery Charge nc di/dt = A/µs e t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) G D S 2

3 AUIRFR37Z Qualification Information Automotive (per AEC-Q1) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level ESD RoHS Compliant Machine Model Human Body Model Charged Device Model D-PAK MSL1 Class M4 AEC-Q1-002 Class H1C AEC-Q1-001 Class C3 AEC-Q1-005 Yes Qualification standards can be found at International Rectifier s web site: http// Exceptions to AEC-Q1 requirements are noted in the qualification report. 3

4 I D, Drain-to-Source Current (Α) G fs, Forward Transconductance (S) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) AUIRFR37Z 0 VGS TOP 15V V 6.0V 5.0V 4.8V 4.5V 4.3V BOTTOM 4.0V 0 VGS TOP 15V V 6.0V 5.0V 4.8V 4.5V 4.3V BOTTOM 4.0V 4.0V 4.0V 60µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 1 60µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 0 T J = 175 C 80 T J = 25 C 60 T J = 25 C 40 T J = 175 C 1.0 V DS = 25V 60µs PULSE WIDTH V DS = V V GS, Gate-to-Source Voltage (V) I D,Drain-to-Source Current (A) Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance vs. Drain Current 4

5 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) AUIRFR37Z V GS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd C iss I D = 33A V DS = 80V V DS = 50V V DS = 20V C oss C rss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on).00 T J = 175 C.00 µsec T J = 25 C 1.00 V GS = 0V V SD, Source-to-Drain Voltage (V) Tc = 25 C Tj = 175 C Single Pulse 1msec msec 1 0 V DS, Drain-to-Source Voltage (V) ce Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 5

6 I D, Drain Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) AUIRFR37Z Limited By Package I D = 56A V GS = V T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Normalized On-Resistance vs. Temperature Thermal Response ( Z thjc ) D = R 1 R 2 R 3 R 1 R 2 R 3 τ J τ J τ 1 τ τ 2 τ 3 1 τ 2 τ 3 Ci= τi/ri Ci i/ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-006 1E t 1, Rectangular Pulse Duration (sec) τ C τ Ri ( C/W) τi (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6

7 V GS(th) Gate threshold Voltage (V) E AS, Single Pulse Avalanche Energy (mj) AUIRFR37Z 15V 700 V DS L DRIVER I D TOP 3.4A 4.8A BOTTOM 33A R G 20V V GS tp D.U.T IAS 0.01Ω + - V DD A Fig 12a. Unclamped Inductive Test Circuit 200 V (BR)DSS tp Starting T J, Junction Temperature ( C) I AS Fig 12b. Unclamped Inductive Waveforms Fig 12c. Maximum Avalanche Energy vs. Drain Current Q G V Q GS Q GD 4.0 V G Charge 3.0 Fig 13a. Basic Gate Charge Waveform I D = 250µA K DUT L VCC T J, Temperature ( C ) Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage vs. Temperature 7

8 E AR, Avalanche Energy (mj) Avalanche Current (A) AUIRFR37Z 0 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25 C due to avalanche losses E E E E E E-01 tav (sec) Fig 15. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM 1% Duty Cycle I D = 33A Starting T J, Junction Temperature ( C) Notes on Repetitive Avalanche Curves, Figures 15, 16: (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 15, 16). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see figure 11) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc I av = 2DT/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av Fig 16. Maximum Avalanche Energy vs. Temperature 8

9 AUIRFR37Z + - D.U.T + ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG V DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test + - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs V DS R D R G V GS D.U.T. + - V DD V Pulse Width 1 µs Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit V DS 90% % V GS t d(on) t r t d(off) t f Fig 18b. Switching Time Waveforms 9

10 AUIRFR37Z D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak Part Marking Information Part Number IR Logo AUFR37Z YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, LeadFree Lot Code Note: For the most current drawing please refer to IR website at

11 AUIRFR37Z D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by T Jmax, starting T J = 25 C, L = 0.28mH R G = 25Ω, I AS = 33A, V GS =V. Part not recommended for use above this value. ƒ Pulse width 1.0ms; duty cycle 2%. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Limited by T Jmax, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population, starting T J = 25 C, L = 0.28mH, R G = 25Ω, I AS = 33A, V GS =V. When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. ˆ R θ is measured at TJ approximately 90 C. 11

12 AUIRFR37Z Ordering Information Base part Package Type Standard Pack Complete Part Number Form Quantity AUIRFR37Z Dpak Tube 75 AUIRFR37Z Tape and Reel 2000 AUIRFR37ZTR Tape and Reel Left 3000 AUIRFR37ZTRL Tape and Reel Right 3000 AUIRFR37ZTRR 12

13 AUIRFR37Z IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or enhanced plastic. Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR s Technical Assistance Center WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California Tel: (3)