AUTOMOTIVE GRADE G D S. W/ C V GS Gate-to-Source Voltage ± 20. mj I AR. mj dv/dt Peak Diode Recovery f 27. V/ns T J

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1 Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description AUTOMOTIVE GRADE Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G D S D V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) G S D-Pak AUIRFR367 AUIRFR367 AUIRFU367 HEXFET Power MOSFET G DS I-Pak AUIRFU367 PD V 7.34mΩ 9.mΩ 8Ac 56A G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. Parameter Max. Units I T C = 25 C Continuous Drain Current, V (Silicon Limited) 8c I T C = C Continuous Drain Current, V V (Silicon Limited) 56c I T C = 25 C Continuous Drain Current, V V (Package Limited) 56 A I DM Pulsed Drain Current d 3 P C = 25 C Maximum Power Dissipation 14 W Linear Derating Factor.96 W/ C V GS Gate-to-Source Voltage ± 2 V E AS (Thermally limited) Single Pulse Avalanche Energy e 12 mj I AR Avalanche Currentd 46 A E AR Repetitive Avalanche Energy g 14 mj dv/dt Peak Diode Recovery f 27 V/ns T J Operating Junction and -55 to T STG Storage Temperature Range C 3(1.6mm from case) Soldering Temperature, for seconds Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case k 1.45 R θja Junction-to-Ambient j 5 R θja Junction-to-Ambient (PCB Mount) j 1 HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at C/W 6/22/11

2 Static Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 75 V ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient.96 V/ C R DS(on) Static Drain-to-Source On-Resistance mω V GS(th) Gate Threshold Voltage V gfs Forward Transconductance 115 S I DSS Drain-to-Source Leakage Current 2 μa 25 I GSS Gate-to-Source Forward Leakage na Gate-to-Source Reverse Leakage - Dynamic Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge nc I D = 46A Q gs Gate-to-Source Charge 13 V DS = 38V Q gd Gate-to-Drain ("Miller") Charge 16 V GS = V g Q sync Total Gate Charge Sync. (Q g - Q gd ) 4 I D = 46A, V DS =V, V GS = V R G(int) Internal Gate Resistance.55 Ω t d(on) Turn-On Delay Time 16 ns t r Rise Time 1 t d(off) Turn-Off Delay Time 43 t f Fall Time 96 C iss Input Capacitance 37 pf C oss Output Capacitance 28 C rss Reverse Transfer Capacitance 13 C oss eff. (ER) Effective Output Capacitance (Energy Related) 38 C oss eff. (TR) Effective Output Capacitance (Time Related) 6 Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 8c A Conditions V GS = V, I D = 25μA Reference to 25 C, I D = 5mAd V GS = V, I D = 46A g V DS = V GS, I D = μa V DS = 5V, I D = 46A V DS = 75V, V GS = V V DS = 6V, V GS = V, T J = 125 C V GS = 2V V GS = -2V V DD = 49V I D = 46A R G = 6.8Ω V GS = V g V GS = V V DS = 5V ƒ = 1.MHz V GS = V, V DS = V to 6V j V GS = V, V DS = V to 6V h Conditions MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current 3 integral reverse G (Body Diode)d p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 46A, V GS = V g t rr Reverse Recovery Time 33 5 ns T J = 25 C V R = 64V, T J = 125 C I F = 46A Q rr Reverse Recovery Charge nc T J = 25 C di/dt = A/μs g T J = 125 C I RRM Reverse Recovery Current 1.9 A T J = 25 C t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D Notes: I SD 46A, di/dt 192A/μs, V DD V (BR)DSS, T J 175 C. Calculated continuous current based on maximum allowable junction Pulse width 4μs; duty cycle 2%. temperature. Bond wire current limit is 56A. Note that current C oss eff. (TR) is a fixed capacitance that gives the same charging time limitations arising from heating of the device leads may occur with as C oss while V DS is rising from to 8% V DSS. some lead mounting arrangements. C oss eff. (ER) is a fixed capacitance that gives the same energy as Repetitive rating; pulse width limited by max. junction temperature. C oss while V DS is rising from to 8% V DSS. ƒ Limited by T ˆ When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994. Jmax, starting T J = 25 C, L =.12mH R G = 25Ω, I AS = 46A, V GS =V. Part not recommended for use R θ is measured at T J approximately 9 C. above this value. 2

3 Qualification Information Automotive (per AEC-Q1) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level 3L-D PAK MSL1 3L-I-PAK N/A Machine Model Class M4(+/- 6V ) ESD RoHS Compliant (per AEC-Q1-2) Human Body Model Class H1C(+/- 2V ) Charged Device Model (per AEC-Q1-1) Class C4(+/- V ) (per AEC-Q1-5) Yes Qualification standards can be found at International Rectifier s web site: http// Exceptions to AEC-Q1 requirements are noted in the qualification report. Highest passing voltage 3

4 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) AUIRFR/U367 VGS TOP 15V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V VGS TOP 15V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V 4.5V 4.5V 6μs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6μs PULSE WIDTH Tj = 175 C.1 1 V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D = 8A V GS = V T J = 175 C T J = 25 C V DS = 25V 6μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature V GS = V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd I D = 46A V DS = 24V V DS = 15V C iss 6. C oss 4. C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 4

5 Energy (μj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) AUIRFR/U367 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 175 C T J = 25 C 1 V GS = V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1msec msec μsec Tc = 25 C Tj = 175 C Single Pulse DC 1 1 V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 8 7 Limited By Package 95 Id = 5mA T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) Fig. Drain-to-Source Breakdown Voltage I D TOP 5.6A 11A BOTTOM 46A V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig 11. Typical C OSS Stored Energy Fig 12. Maximum Avalanche Energy vs. DrainCurrent 5

6 E AR, Avalanche Energy (mj) Avalanche Current (A) AUIRFR/U D =.5 Thermal Response ( Z thjc ) C/W R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci i Ri Notes: SINGLE PULSE 1. Duty Factor D = t1/t2 ( THERMAL RESPONSE ) 2. Peak Tj = P dm x Zthjc + Tc. 1E-6 1E t 1, Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case R 4 R 4 τ 4 τ 4 τ C τ Ri ( C/W) τi (sec) Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 15 C and Tstart =25 C (Single Pulse).5. 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤj = 25 C and Tstart = 15 C..1 1.E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 tav (sec) Fig 14. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM 1.% Duty Cycle I D = 46A Notes on Repetitive Avalanche Curves, Figures 14, 15: (For further info, see AN-5 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 22a, 22b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 14, 15). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 13) Starting T J, Junction Temperature ( C) Fig 15. Maximum Avalanche Energy vs. Temperature P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc I av = 2DT/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av 6

7 Q RR (A) I RR (A) Q RR (A) V GS(th), Gate Threshold Voltage (V) I RR (A) AUIRFR/U I F = 31A V R = 64V T J = 25 C T J = 125 C I D = μa I D = 25μA I D = 1.mA I D = 1.A T J, Temperature ( C ) Fig 16. Threshold Voltage vs. Temperature di F /dt (A/μs) Fig Typical Recovery Current vs. di f /dt 2 I F = 46A V R = 64V I F = 31A V R = 64V 15 T J = 25 C T J = 125 C 4 T J = 25 C T J = 125 C di F /dt (A/μs) di F /dt (A/μs) Fig Typical Recovery Current vs. di f /dt Fig Typical Stored Charge vs. di f /dt I F = 46A V R = 64V T J = 25 C T J = 125 C di F /dt (A/μs) Fig. 2 - Typical Stored Charge vs. di f /dt 7

8 + - D.U.T + ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG V DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test + - Re-Applied Voltage Body Diode Inductor Current Curent Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 2. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 15V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.1Ω + - V DD A I AS Fig 21a. Unclamped Inductive Test Circuit Fig 21b. Unclamped Inductive Waveforms L D V DS V DD + - V DS 9% D.U.T % V GS Pulse Width < 1μs Duty Factor <.1% V GS t d(on) t r t d(off) t f Fig 22a. Switching Time Test Circuit Fig 22b. Switching Time Waveforms Vds Id Vgs 1K DUT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 23a. Gate Charge Test Circuit Fig 23b. Gate Charge Waveform 8

9 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information Part Number IR Logo AUFR367 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at 9

10 I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information Part Number IR Logo AUFU367 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at

11 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm 11

12 Ordering Information Base part Package Type Standard Pack Complete Part Number Form Quantity AUIRFR367 DPak Tube 75 AUIRFR367 Tape and Reel 2 AUIRFR367TR Tape and Reel Left 3 AUIRFR367TRL Tape and Reel Right 3 AUIRFR367TRR AUIRFU367 IPak Tube 75 AUIRFU

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