TO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
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1 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on) in TO-22 l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability G D S V DSS IRFB431 IRFS431 IRFSL431 HEXFET Power MOSFET R DS(on) typ. max. I D PD A 1V 5.6m: 7.m: 14A TO-22AB IRFB431 G D S G D S D 2 Pak IRFS431 G D S TO-262 IRFSL431 Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V 1V 14c A I T C = 1 C Continuous Drain Current, V 1V 97 c I DM Pulsed Drain Current d 55 P C = 25 C Maximum Power Dissipation 33 W Linear Derating Factor 2.2 W/ C V GS Gate-to-Source Voltage ± 2 V dv/dt Peak Diode Recovery f 14 V/ns Operating Junction and -55 to C T STG Storage Temperature Range Soldering Temperature, for 1 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 3 1lbxin (1.1Nxm) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 98 mj I AR Avalanche Currentc See Fig. 14, 15, 22a, 22b, A E AR Repetitive Avalanche Energy g mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc Junction-to-Case k.45 R θcs Case-to-Sink, Flat Greased Surface, TO-22.5 C/W R θja Junction-to-Ambient, TO-22 k 62 R θja Junction-to-Ambient (PCB Mount), D 2 Pak jk /2/6
2 IRF/B/S/SL431 = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS Drain-to-Source Breakdown Voltage 1 V V (BR)DSS / Breakdown Voltage Temp. Coefficient.64 V/ C Reference to 25 C, I D = 1mAd R DS(on) Static Drain-to-Source On-Resistance mω V GS = 1V, I D = 75A g V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µA I DSS Drain-to-Source Leakage Current 2 µa V DS = 1V, V GS = V 25 V DS = 1V, V GS = V, = 125 C I GSS Gate-to-Source Forward Leakage 2 na V GS = 2V Gate-to-Source Reverse Leakage -2 V GS = -2V R G Gate Input Resistance 1.4 Ω f = 1MHz, open drain = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance 16 S Q g Total Gate Charge nc Q gs Gate-to-Source Charge 46 Q gd Gate-to-Drain ("Miller") Charge 62 t d(on) Turn-On Delay Time 26 ns t r Rise Time 11 t d(off) Turn-Off Delay Time 68 t f Fall Time 78 C iss Input Capacitance 767 pf C oss Output Capacitance 54 C rss Reverse Transfer Capacitance 28 C oss eff. (ER) Effective Output Capacitance (Energy Related)i 65 C oss eff. (TR) Effective Output Capacitance (Time Related)h 72.1 Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 14c A Conditions V GS = V, I D = 25µA Conditions V DS = 5V, I D = 75A I D = 75A V DS = 8V V GS = 1V g V DD = 65V I D = 75A R G = 2.6Ω V GS = 1V g V GS = V V DS = 5V ƒ = 1.MHz V GS = V, V DS = V to 8V j, See Fig.11 V GS = V, V DS = V to 8V h, See Fig. 5 Conditions MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current 55 integral reverse G (Body Diode)di p-n junction diode. V SD Diode Forward Voltage 1.3 V = 25 C, I S = 75A, V GS = V g t rr Reverse Recovery Time ns = 25 C V R = 85V, = 125 C I F = 75A Q rr Reverse Recovery Charge nc = 25 C di/dt = 1A/µs g = 125 C I RRM Reverse Recovery Current 3.3 A = 25 C t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D S Notes: Calculated continuous current based on maximum allowable junction C oss eff. (TR) is a fixed capacitance that gives the same charging time temperature. Package limitation current is 75A as C oss while V DS is rising from to 8% V DSS. Repetitive rating; pulse width limited by max. junction C oss eff. (ER) is a fixed capacitance that gives the same energy as temperature. C oss while V DS is rising from to 8% V DSS. ƒ Limited by max, starting = 25 C, L =.35mH ˆ When mounted on 1" square PCB (FR-4 or G-1 Material). For recom R G = 25Ω, I AS = 75A, V GS =1V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994. above this value. R θ is measured at approximately 9 C I SD 75A, di/dt 55A/µs, V DD V (BR)DSS, 175 C. Pulse width 4µs; duty cycle 2%. 2
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (Α) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF/B/S/SL VGS TOP 15V 1V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V 1 VGS TOP 15V 1V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V V 6µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 1 4.5V 6µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 75A V GS = 1V 1 = 175 C 2. 1 = 25 C 1.5 V DS = 5V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics , Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature V GS = V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd Ciss I D = 75A V DS = 8V VDS= 5V VDS= 2V Coss Crss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3
4 I SD, Reverse Drain Current (A) Energy (µj) E AS, Single Pulse Avalanche Energy (mj) I D, Drain Current (A) V (BR)DSS, Drain-to-Source Breakdown Voltage I D, Drain-to-Source Current (A) IRF/B/S/SL = 175 C 1 1 OPERATION IN THIS AREA LIMITED BY R DS (on) µsec = 25 C V GS = V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage LIMITED BY PACKAGE 1 Tc = 25 C 1msec Tj = 175 C 1msec Single Pulse DC V DS, Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature , Junction Temperature ( C) Fig 1. Drain-to-Source Breakdown Voltage I D TOP 12A 17A BOTTOM 75A V DS, Drain-to-Source Voltage (V) Starting, Junction Temperature ( C) Fig 11. Typical C OSS Stored Energy Fig 12. Maximum Avalanche Energy Vs. DrainCurrent 4
5 E AR, Avalanche Energy (mj) Avalanche Current (A) Thermal Response ( Z thjc ) IRF/B/S/SL431 1 D = R 1 R 2 R 1 R 2 τ J τ J τ 1 τ τ 2 1 τ 2 τ C τ Ri ( C/W) τi (sec) SINGLE PULSE ( THERMAL RESPONSE ) Ci= τi/ri Ci= i/ri 1E-6 1E t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1 Duty Cycle = Single Pulse.1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 15 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Τ j = 25 C and Tstart = 15 C E-6 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 TOP Single Pulse BOTTOM 1% Duty Cycle I D = 75A Starting, Junction Temperature ( C) Fig 15. Maximum Avalanche Energy vs. Temperature tav (sec) Fig 14. Typical Avalanche Current vs.pulsewidth Notes on Repetitive Avalanche Curves, Figures 14, 15: (For further info, see AN-15 at 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither T jmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 14, 15). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 13) P D (ave) = 1/2 ( 1.3 BV I av ) = DT/ Z thjc I av = 2DT/ [1.3 BV Z th ] E AS (AR) = P D (ave) t av 5
6 Q RR - (nc) I RRM - (A) Q RR - (nc) V GS (th) Gate threshold Voltage (V) I RRM - (A) IRF/B/S/SL I D = 1.A I D = 1.mA I D = 25µA , Temperature ( C ) Fig 16. Threshold Voltage Vs. Temperature I F = 3A 4 V R = 85V = 125 C = 25 C di f / dt - (A / µs) Fig Typical Recovery Current vs. di f /dt I F = 45A 4 V R = 85V = 125 C = 25 C di f / dt - (A / µs) Fig Typical Recovery Current vs. di f /dt 2 I F = 3A 1 V R = 85V = 125 C = 25 C di f / dt - (A / µs) Fig Typical Stored Charge vs. di f /dt I F = 45A V 1 R = 85V = 125 C = 25 C di f / dt - (A / µs) Fig. 2 - Typical Stored Charge vs. di f /dt 6
7 IRF/B/S/SL D.U.T + ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =1V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD + - Re-Applied Voltage Body Diode Inductor Curent Current Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 15V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.1Ω + - V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms L D V DS V DD + - V DS 9% D.U.T 1% V GS Pulse Width < 1µs Duty Factor <.1% V GS t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Vds Id Vgs 1K DUT L VCC Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 7
8 IRF/B/S/SL431 TO-22AB Package Outline Dimensions are shown in millimeters (inches) TO-22AB Part Marking Information EXAMPLE: THIS IS AN IRF11 LOT CODE 1789 AS SEMBLED ON WW 19, 2 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead - Free" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER YEAR = 2 DAT E CODE WEEK 19 LINE C TO-22AB packages are not recommended for Surface Mount Application. 8
9 IRF/B/S/SL431 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL313L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE 9
10 IRF/B/S/SL431 D 2 Pak (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D 2 Pak (TO-263AB) Part Marking Information THIS IS AN IRF53S WITH LOT CODE 824 AS S EMBLED ON WW 2, 2 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASS EMBLY LOT CODE F53S PART NUMBER DATE CODE YEAR = 2 WEEK 2 LINE L OR INTERNATIONAL RECTIFIER LOGO ASS EMBLY LOT CODE PART NUMBER DATE CODE P = DES IGNAT E S LE AD - F REE PRODUCT (OPTIONAL) YEAR = 2 WEEK 2 A = AS S E MB LY S ITE CODE 1 F53S
11 IRF/B/S/SL431 D 2 Pak (TO-263AB) Tape & Reel Information TRR 1.6 (.63) 1.5 (.59) 4.1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEED DIRECTION TRL 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) (.69) (.61) 24.3 (.957) 23.9 (.941) 1.9 (.429) 1.7 (.421) 16.1 (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.39) 24.4 (.961) (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information. 1/6 11
12 Note: For the most current drawings please refer to the IR website at:
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PD 97363 IRLB334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationW/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 57
PD 974 HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14. V/ns T J. mj I AR. Thermal Resistance Symbol Parameter Typ. Max.
PD 9728 IRFP336PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationW/ C V GS Gate-to-Source Voltage ±16 dv/dt Peak Diode Recovery f 8.0. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b E AR
PD 97357 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 57
PD 9736A IRFB427PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 32
PD 9747 IRFS457PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 2.0
PD 97323 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationOrdering Information Base Part Number Package Type Standard Pack Complete Part Number 500 I D = 100A T J = 125 C 200 I D,
R DS(on), Drain-to -Source On Resistance (m Ω) I D, Drain Current (A) StrongIRFET TM Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationIRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More information