Base Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF

Transcription

1 IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S Gate Drain Source Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dv/dt and di/dt Capability Lead-Free Base Part Number Package Type Standard Pack Orderable Part Number Form Quantity IRFP36PbF TO-247 Tube 25 IRFP36PbF Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 27 A I T C = C Continuous Drain Current, V V(Silicon Limited) 9 I T C = 25 C Continuous Drain Current, V V (Wire Bond Limited) 95 I DM Pulsed Drain Current 8 P C = 25 C Maximum Power Dissipation 375 W Linear Derating Factor 2.5 W/ C V GS Gate-to-Source Voltage ± 2 V dv/dt Peak Diode Recovery V/ns Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 3 (.6mm from case) Mounting torque, 6-32 or M3 screw lbf in (.N m) Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy 32 mj I AR Avalanche Current See Fig. 4, 5, 22a, 22b A E AR Repetitive Avalanche Energy mj Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case.4 R CS Case-to-Sink, Flat Greased Surface.24 C/W R JA Junction-to-Ambient International Rectifier September 6, 23

2 IRFP36PbF = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 6 V V GS = V, I D = 25µA V (BR)DSS / Breakdown Voltage Temp. Coefficient.7 V/ C Reference to 25 C, I D = 5mA R DS(on) Static Drain-to-Source On-Resistance m V GS = V, I D = 7A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 25µA I DSS Drain-to-Source Leakage Current 2 µa V DS = 6V, V GS = V 25 V DS = 6V, V GS = V, = 25 C I GSS Gate-to-Source Forward Leakage na V GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V R G Internal Gate Resistance 2. = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 28 S V DS = 25V, I D = 7A Q g Total Gate Charge 2 3 I D = 7A Q gs Gate-to-Source Charge 37 V DS =3V nc Q gd Gate-to-Drain ("Miller") Charge 6 V GS = V Q sync Total Gate Charge Sync. (Q g - Q gd ) 4 I D = 7A, V DS =V, V GS = V t d(on) Turn-On Delay Time 6 V DD = 39V t r Rise Time 82 I D = 7A ns t d(off) Turn-Off Delay Time 8 R G = 2.7 t f Fall Time 89 V GS = V C iss Input Capacitance 897 V GS = V C oss Output Capacitance 2 V DS = 5V C rss Reverse Transfer Capacitance 534 ƒ =. MHz, See Fig. 5 pf C oss eff. (ER) Effective Output Capacitance 48 V GS = V, V DS = V to 48V (Energy Related) See Fig. C oss eff. (TR) Effective Output Capacitance 92 V GS = V, V DS = V to 48V (Time Related) Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 257 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 28 S (Body Diode) p-n junction diode. V SD Diode Forward Voltage.3 V = 25 C, I S = 7A, V GS = V t rr Reverse Recovery Time 44 ns = 25 C 48 = 25 C Q rr Reverse Recovery Charge 63 nc = 25 C 77 = 25 C I RRM Reverse Recovery Current 2.4 A = 25 C V R = 5V, I F = 7A di/dt = A/µs Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 95A.Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-4) Repetitive rating; pulse width limited by max. Junction temperature. Limited by max, starting = 25 C, L =.22mH, R G = 5, I AS = 7A,V GS =V. Part not Recommended for use above this value. ISD 7A, di/dt 36A/µs, V DD V (BR)DSS, 75 C. Pulse width 4µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from to 8% V DSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while V DS is rising from to 8% V DSS. R is measured at approximately 9 C. * All spec data and curves based on (TO-22 Pak -IRFB36PbF) Datasheet International Rectifier September 6, 23

3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current ) (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFP36PbF VGS TOP 5V V 8.V 6.V 5.V 4.5V 4.V BOTTOM 3.5V VGS TOP 5V V 8.V 6.V 5.V 4.5V 4.V BOTTOM 3.5V 3.5V 6µs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics 3.5V 6µs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics R DS(on), Drain-to-Source On Resistance 2.5 I D = 7A V GS = V = 75 C 2. = 25 C V DS = 25V 6µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics , Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 6 2 V GS = V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 6 2 I D = 7A V DS = 48V V DS = 3V C iss C oss 4 C rss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage International Rectifier September 6, 23

4 Energy (µj) I D, Drain Current (A) I SD, Reverse Drain Current (A) E AS, Single Pulse Avalanche Energy (mj) I D, Drain-to-Source Current (A) IRFP36PbF = 75 C OPERATION IN THIS AREA LIMITED BY R DS (on) µsec = 25 C LIMITED BY PACKAGE msec V GS = V V SD, Source-to-Drain Voltage (V) msec Tc = 25 C Tj = 75 C DC Single Pulse.. V DS, Drain-toSource Voltage (V) Fig 7. Typical Source-to-Drain Diode Forward Voltage V (BR)DSS, Drain-to-Source Breakdown Voltage Fig 8. Maximum Safe Operating Area 3 LIMITED BY PACKAGE 8 I D = 5mA T C, Case Temperature ( C) , Junction Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig. Drain-to-Source Breakdown Voltage I D TOP 2A 27A BOTTOM 7A V DS, Drain-to-Source Voltage (V) Starting, Junction Temperature ( C) Fig. Typical Coss Stored Energy Fig 2. Maximum Avalanche Energy vs. Drain Current International Rectifier September 6, 23

5 E AR, Avalanche Energy (mj) Avalanche Current (A) IRFP36PbF Thermal Response ( Z thjc ).. D = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc E-6 E t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 5 C and Tstart =25 C (Single Pulse)..5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25 C and Tstart = 5 C..E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 4. Typical Avalanche Current vs. Pulsewidth TOP Single Pulse BOTTOM % Duty Cycle I D = 7A Starting, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = tav f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) P D (ave) = /2 (.3 BV I av ) = T/ Z thjc I av = 2 T/ [.3 BV Z th ] E AS (AR) = P D (ave) t av International Rectifier September 6, 23

6 Q RR - (nc) I RRM - (A) Q RR - (nc) V GS (th) Gate threshold Voltage (V) I RRM - (A) IRFP36PbF 4. 2 I D =.A 3.5 I D =.ma I D = 25µA I F = 2A.5 4 V R = 5V = 25 C = 25 C , Temperature ( C ) di f / dt - (A / µs) Fig. 6 Threshold Voltage vs. Temperature Fig. 7 Typical Recovery Current vs. di f /dt I F = 7A 2 I F = 2A 4 V R = 5V = 25 C V R = 5V = 25 C = 25 C = 25 C di f / dt - (A / µs) di f / dt - (A / µs) Fig 8. Typical Recovery Current vs. di f /dt Fig 9. Typical Stored Charge vs. di f /dt I F = 7A V R = 5V = 25 C = 25 C di f / dt - (A / µs) Fig 2. Typical Stored Charge vs. di f /dt International Rectifier September 6, 23

7 IRFP36PbF Fig 2. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform International Rectifier September 6, 23

8 IRFP36PbF TO-247AC Package Outline (Dimensions are shown in millimeters (inches)) TO-247AC Part Marking Information TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at International Rectifier September 6, 23

9 IRFP36PbF Qualification information Qualification level Industrial (per JEDEC JESD47F ) Moisture Sensitivity Level TO-247AC N/A RoHS compliant Yes Qualification standards can be found at International Rectifier s web site Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: N Sepulveda Blvd, El Segundo, California 9245, USA To contact Interna onal Rec fier, please visit h p:// call/ International Rectifier September 6, 23