AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Complete Part Number

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1 AUTOMOTIVE GRADE AUIRFS843 AUIRFSL843 Features l Advanced Process Technology l New Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 75 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Applications l Electric Power Steering (EPS) l Battery Switch l Start/Stop Micro Hybrid l Heavy Loads l DC-DC Converter Ordering Information G D S HEXFET Power MOSFET G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at D G S D 2 Pak AUIRFS843 V DSS R DS(on) typ. D max. I D (Silicon Limited) S D G TO-262 AUIRFSL843 Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRFSL843 TO-262 Tube 5 AUIRFSL843 AUIRFS843 D2Pak Tube 5 AUIRFS843 Tape and Reel Left 8 AUIRFS843TRL Tape and Reel Right 8 AUIRFS843TRR 4V 2.6mΩ 3.3mΩ 23A Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 23 I T C = C Continuous Drain Current, V V (Silicon Limited) 87 A I DM Pulsed Drain Current c 492 P C = 25 C Maximum Power Dissipation 99 W Linear Derating Factor.66 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) 3 C Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy d E AS (tested) Single Pulse Avalanche Energy Tested Value j 6 mj I AR Avalanche Currentc A See Fig. 4, 5, 24a, 24b E AR Repetitive Avalanche Energy c mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc Junction-to-Case i.52 R θja Junction-to-Ambient (PCB Mount) D2 Pak 4 C/W 23 International Rectifier May 8 23

2 AUIRFS/SL843 (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 4 V V GS = V, I D = 25μA Δ V (BR)DSS/ΔT J Breakdown Voltage Temp. Coefficient.33 V/ C Reference to 25 C, I D = 5mAc R DS(on) Static Drain-to-Source On-Resistance mω V GS = V, I D = 7A f V GS(th) Gate Threshold Voltage V V DS = V GS, I D = μa I DSS Drain-to-Source Leakage Current. V DS = 4V, V GS = V μa 5 V DS = 4V, V GS = V, I GSS Gate-to-Source Forward Leakage V GS = 2V na Gate-to-Source Reverse Leakage - V GS = -2V R G Internal Gate Resistance.6 Ω (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 269 S V DS = V, I D = 7A Q g Total Gate Charge I D = 7A Q gs Gate-to-Source Charge 6 V DS =2V nc Q gd Gate-to-Drain ("Miller") Charge 2 V GS = V f Q sync Total Gate Charge Sync. (Q g - Q gd) 42 I D = 7A, V DS =V, V GS = V t d(on) Turn-On Delay Time V DD = 26V t r Rise Time 77 I D = 7A ns t d(off) Turn-Off Delay Time 26 R G =Ω t f Fall Time 43 V GS = V f C iss Input Capacitance 383 V GS = V C oss Output Capacitance 475 V DS = 25V C rs s Reverse Transfer Capacitance 33 pf ƒ =. MHz, See Fig. 5 C oss eff. (ER) Effective Output Capacitance (Energy Related) 596 V GS = V, V DS = V to 32V h, See Fig. C oss eff. (TR) Effective Output Capacitance (Time Related) 688 V GS = V, V DS = V to 32V g Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 8 MOSFET symbol (Body Diode) showing the A G Pulsed Source Current integral reverse I SM (Body Diode)Ãc 472 V SD Diode Forward Voltage.9.3 V dv/dt Peak Diode RecoveryÃeà 7.6 V/ns p-n junction diode., I S = 7A, V GS = V f T J = 75 C, I S = 7A, V DS = 4V t rr Reverse Recovery Time 22 V R = 34V, ns 24 I F = 7A Q rr Reverse Recovery Charge 5 di/dt = A/μs f nc 5 I RRM Reverse Recovery Current. A D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L =.46mH,R G = 5Ω, I AS = 7A, V GS =V. ƒ I SD 7A, di/dt 74A/μs, V DD V (BR)DSS, T J 75 C. Pulse width 4μs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. R θ is measured at T J approximately 9 C. ˆ This value determined from sample failure population, starting, L=.46mH, R G = 5Ω, I AS = 7A, V GS =V International Rectifier May 8 23

3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL843 VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 4.5V 6μs PULSE WIDTH Tj = 25 C.. V DS, Drain-to-Source Voltage (V) 6μs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.2 T J = 75 C.8 I D = 7A V GS = V.4 V DS = V 6μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = 7A V DS = 32V V DS = 2V C iss C oss C rss V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage International Rectifier May 8 23

4 Energy (μj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL843 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C V GS = V V SD, Source-to-Drain Voltage (V) 25 Fig 7. Typical Source-Drain Diode Forward Voltage Tc = 25 C Tj = 75 C Single Pulse DC μsec msec msec.. V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Id = 5.mA T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature 5 T J, Temperature ( C ) Fig. Drain-to-Source Breakdown Voltage.5.4 V DS = V to 32V I D TOP 2A 23A BOTTOM 7A V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. DrainCurrent International Rectifier May 8 23

5 E AR, Avalanche Energy (mj) Avalanche Current (A) AUIRFS/SL843 Thermal Response ( Z thjc ) C/W.. D = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 5 C and Tstart = 25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤj = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM.% Duty Cycle I D = 7A Notes on Repetitive Avalanche Curves, Figures 4, 5 (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 24a, 24b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av International Rectifier May 8 23

6 I RRM (A) Q RR (nc) I RRM (A) Q RR (nc) V GS(th), Gate threshold Voltage (V) AUIRFS/SL843 R DS(on), Drain-to -Source On Resistance (m Ω) I D = 7A ID = μa ID = 25μA ID =.ma ID =.A V GS, Gate -to -Source Voltage (V) T J, Temperature ( C ) Fig 6. On-Resistance vs. Gate Voltage Fig 7. Threshold Voltage vs. Temperature I F = 46A V R = 34V I F = 46A V R = 34V di F /dt (A/μs) di F /dt (A/μs) Fig. 8 - Typical Recovery Current vs. di f /dt Fig. 9 - Typical Stored Charge vs. di f /dt 5 4 I F = 7A V R = 34V I F = 7A V R = 34V di F /dt (A/μs) di F /dt (A/μs) Fig. 2 - Typical Recovery Current vs. di f /dt Fig. 2 - Typical Stored Charge vs. di f /dt International Rectifier May 8 23

7 R DS (on), Drain-to -Source On Resistance ( mω) AUIRFS/SL VGS = 5.5V VGS = 6.V VGS = 7.V VGS = 8.V VGS = V I D, Drain Current (A) Fig 22. Typical On-Resistance vs. Drain Current International Rectifier May 8 23

8 AUIRFS/SL843 - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG V DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - Re-Applied Voltage Body Diode Inductor Current Curent Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω - V DD A I AS Fig 24a. Unclamped Inductive Test Circuit Fig 24b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G - V DD VV GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 25a. Switching Time Test Circuit Fig 25b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 5KΩ Vgs 2V.2μF.3μF V GS D.U.T. V - DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 26a. Gate Charge Test Circuit Fig 26b. Gate Charge Waveform International Rectifier May 8 23

9 AUIRFS/SL843 D 2 Pak Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak Part Marking Information Part Number IR Logo AUIRFS843 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at International Rectifier May 8 23

10 AUIRFS/SL843 TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number IR Logo AUIRFSL843 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at International Rectifier May 8 23

11 AUIRFS/SL843 D 2 Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR.6 (.63).5 (.59) 4. (.6) 3.9 (.53).6 (.63).5 (.59).368 (.45).342 (.35) FEED DIRECTION TRL.85 (.73).65 (.65).6 (.457).4 (.449) 5.42 (.69) 5.22 (.6) 24.3 (.957) 23.9 (.94).9 (.429).7 (.42) 6. (.634) 5.9 (.626).75 (.69).25 (.49) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.5 (.532) 2.8 (.54) 27.4 (.79) 23.9 (.94) (4.73) MAX. 6. (2.362) MIN. NOTES :. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.39) 24.4 (.96) (.97) MAX. 4 Note: For the most current drawing please refer to IR website at International Rectifier May 8 23

12 AUIRFS/SL843 Qualification Information Automotive (per AEC-Q) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level 3L-D 2 PAK MSL 3L-TO-262-PAK N/A Machine Model Class M4 (/- 6) AEC-Q-2 ESD Human Body Model Class HC (/- 2) AEC-Q- Charged Device Model Class C5 (/- 2) AEC-Q-5 RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: http// Highest passing voltage International Rectifier May 8 23

13 IMPORTANT NOTICE AUIRFS/SL843 Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 6949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR s Technical Assistance Center WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245 Tel: (3) International Rectifier May 8 23

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