AUTOMOTIVE GRADE. Base part number Package Type Standard Pack Complete Part Number
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1 AUTOMOTIVE GRADE AUIRFS843 AUIRFSL843 Features l Advanced Process Technology l New Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 75 C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. Applications l Electric Power Steering (EPS) l Battery Switch l Start/Stop Micro Hybrid l Heavy Loads l DC-DC Converter Ordering Information G D S HEXFET Power MOSFET G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. HEXFET is a registered trademark of International Rectifier. *Qualification standards can be found at D G S D 2 Pak AUIRFS843 V DSS R DS(on) typ. D max. I D (Silicon Limited) S D G TO-262 AUIRFSL843 Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRFSL843 TO-262 Tube 5 AUIRFSL843 AUIRFS843 D2Pak Tube 5 AUIRFS843 Tape and Reel Left 8 AUIRFS843TRL Tape and Reel Right 8 AUIRFS843TRR 4V 2.6mΩ 3.3mΩ 23A Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 23 I T C = C Continuous Drain Current, V V (Silicon Limited) 87 A I DM Pulsed Drain Current c 492 P C = 25 C Maximum Power Dissipation 99 W Linear Derating Factor.66 W/ C V GS Gate-to-Source Voltage ± 2 V T J Operating Junction and -55 to 75 T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) 3 C Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy d E AS (tested) Single Pulse Avalanche Energy Tested Value j 6 mj I AR Avalanche Currentc A See Fig. 4, 5, 24a, 24b E AR Repetitive Avalanche Energy c mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc Junction-to-Case i.52 R θja Junction-to-Ambient (PCB Mount) D2 Pak 4 C/W 23 International Rectifier May 8 23
2 AUIRFS/SL843 (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 4 V V GS = V, I D = 25μA Δ V (BR)DSS/ΔT J Breakdown Voltage Temp. Coefficient.33 V/ C Reference to 25 C, I D = 5mAc R DS(on) Static Drain-to-Source On-Resistance mω V GS = V, I D = 7A f V GS(th) Gate Threshold Voltage V V DS = V GS, I D = μa I DSS Drain-to-Source Leakage Current. V DS = 4V, V GS = V μa 5 V DS = 4V, V GS = V, I GSS Gate-to-Source Forward Leakage V GS = 2V na Gate-to-Source Reverse Leakage - V GS = -2V R G Internal Gate Resistance.6 Ω (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 269 S V DS = V, I D = 7A Q g Total Gate Charge I D = 7A Q gs Gate-to-Source Charge 6 V DS =2V nc Q gd Gate-to-Drain ("Miller") Charge 2 V GS = V f Q sync Total Gate Charge Sync. (Q g - Q gd) 42 I D = 7A, V DS =V, V GS = V t d(on) Turn-On Delay Time V DD = 26V t r Rise Time 77 I D = 7A ns t d(off) Turn-Off Delay Time 26 R G =Ω t f Fall Time 43 V GS = V f C iss Input Capacitance 383 V GS = V C oss Output Capacitance 475 V DS = 25V C rs s Reverse Transfer Capacitance 33 pf ƒ =. MHz, See Fig. 5 C oss eff. (ER) Effective Output Capacitance (Energy Related) 596 V GS = V, V DS = V to 32V h, See Fig. C oss eff. (TR) Effective Output Capacitance (Time Related) 688 V GS = V, V DS = V to 32V g Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 8 MOSFET symbol (Body Diode) showing the A G Pulsed Source Current integral reverse I SM (Body Diode)Ãc 472 V SD Diode Forward Voltage.9.3 V dv/dt Peak Diode RecoveryÃeà 7.6 V/ns p-n junction diode., I S = 7A, V GS = V f T J = 75 C, I S = 7A, V DS = 4V t rr Reverse Recovery Time 22 V R = 34V, ns 24 I F = 7A Q rr Reverse Recovery Charge 5 di/dt = A/μs f nc 5 I RRM Reverse Recovery Current. A D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by T Jmax, starting, L =.46mH,R G = 5Ω, I AS = 7A, V GS =V. ƒ I SD 7A, di/dt 74A/μs, V DD V (BR)DSS, T J 75 C. Pulse width 4μs; duty cycle 2%. C oss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. C oss eff. (ER) is a fixed capacitance that gives the same energy as C oss while V DS is rising from to 8% V DSS. R θ is measured at T J approximately 9 C. ˆ This value determined from sample failure population, starting, L=.46mH, R G = 5Ω, I AS = 7A, V GS =V International Rectifier May 8 23
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL843 VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V VGS TOP 5V V 8.V 7.V 6.V 5.5V 5.V BOTTOM 4.5V 4.5V 4.5V 6μs PULSE WIDTH Tj = 25 C.. V DS, Drain-to-Source Voltage (V) 6μs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.2 T J = 75 C.8 I D = 7A V GS = V.4 V DS = V 6μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = 7A V DS = 32V V DS = 2V C iss C oss C rss V DS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Q G, Total Gate Charge (nc) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage International Rectifier May 8 23
4 Energy (μj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) AUIRFS/SL843 OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C V GS = V V SD, Source-to-Drain Voltage (V) 25 Fig 7. Typical Source-Drain Diode Forward Voltage Tc = 25 C Tj = 75 C Single Pulse DC μsec msec msec.. V DS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Id = 5.mA T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature 5 T J, Temperature ( C ) Fig. Drain-to-Source Breakdown Voltage.5.4 V DS = V to 32V I D TOP 2A 23A BOTTOM 7A V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. DrainCurrent International Rectifier May 8 23
5 E AR, Avalanche Energy (mj) Avalanche Current (A) AUIRFS/SL843 Thermal Response ( Z thjc ) C/W.. D = SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 5 C and Tstart = 25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤj = 25 C and Tstart = 5 C...E-6.E-5.E-4.E-3.E-2.E- tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth TOP Single Pulse BOTTOM.% Duty Cycle I D = 7A Notes on Repetitive Avalanche Curves, Figures 4, 5 (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 24a, 24b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av International Rectifier May 8 23
6 I RRM (A) Q RR (nc) I RRM (A) Q RR (nc) V GS(th), Gate threshold Voltage (V) AUIRFS/SL843 R DS(on), Drain-to -Source On Resistance (m Ω) I D = 7A ID = μa ID = 25μA ID =.ma ID =.A V GS, Gate -to -Source Voltage (V) T J, Temperature ( C ) Fig 6. On-Resistance vs. Gate Voltage Fig 7. Threshold Voltage vs. Temperature I F = 46A V R = 34V I F = 46A V R = 34V di F /dt (A/μs) di F /dt (A/μs) Fig. 8 - Typical Recovery Current vs. di f /dt Fig. 9 - Typical Stored Charge vs. di f /dt 5 4 I F = 7A V R = 34V I F = 7A V R = 34V di F /dt (A/μs) di F /dt (A/μs) Fig. 2 - Typical Recovery Current vs. di f /dt Fig. 2 - Typical Stored Charge vs. di f /dt International Rectifier May 8 23
7 R DS (on), Drain-to -Source On Resistance ( mω) AUIRFS/SL VGS = 5.5V VGS = 6.V VGS = 7.V VGS = 8.V VGS = V I D, Drain Current (A) Fig 22. Typical On-Resistance vs. Drain Current International Rectifier May 8 23
8 AUIRFS/SL843 - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =V V DD * R G dv/dt controlled by RG V DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - Re-Applied Voltage Body Diode Inductor Current Curent Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω - V DD A I AS Fig 24a. Unclamped Inductive Test Circuit Fig 24b. Unclamped Inductive Waveforms V DS R D V DS V GS D.U.T. 9% R G - V DD VV GS Pulse Width µs Duty Factor. % % V GS t d(on) t r t d(off) t f Fig 25a. Switching Time Test Circuit Fig 25b. Switching Time Waveforms Current Regulator Same Type as D.U.T. Vds Id 5KΩ Vgs 2V.2μF.3μF V GS D.U.T. V - DS Vgs(th) 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 26a. Gate Charge Test Circuit Fig 26b. Gate Charge Waveform International Rectifier May 8 23
9 AUIRFS/SL843 D 2 Pak Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak Part Marking Information Part Number IR Logo AUIRFS843 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at International Rectifier May 8 23
10 AUIRFS/SL843 TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number IR Logo AUIRFSL843 YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at International Rectifier May 8 23
11 AUIRFS/SL843 D 2 Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches) TRR.6 (.63).5 (.59) 4. (.6) 3.9 (.53).6 (.63).5 (.59).368 (.45).342 (.35) FEED DIRECTION TRL.85 (.73).65 (.65).6 (.457).4 (.449) 5.42 (.69) 5.22 (.6) 24.3 (.957) 23.9 (.94).9 (.429).7 (.42) 6. (.634) 5.9 (.626).75 (.69).25 (.49) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.5 (.532) 2.8 (.54) 27.4 (.79) 23.9 (.94) (4.73) MAX. 6. (2.362) MIN. NOTES :. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.39) 24.4 (.96) (.97) MAX. 4 Note: For the most current drawing please refer to IR website at International Rectifier May 8 23
12 AUIRFS/SL843 Qualification Information Automotive (per AEC-Q) Qualification Level Comments: This part number(s) passed Automotive qualification. IR s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level 3L-D 2 PAK MSL 3L-TO-262-PAK N/A Machine Model Class M4 (/- 6) AEC-Q-2 ESD Human Body Model Class HC (/- 2) AEC-Q- Charged Device Model Class C5 (/- 2) AEC-Q-5 RoHS Compliant Yes Qualification standards can be found at International Rectifier s web site: http// Highest passing voltage International Rectifier May 8 23
13 IMPORTANT NOTICE AUIRFS/SL843 Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer s own risk and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 6949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR s Technical Assistance Center WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 9245 Tel: (3) International Rectifier May 8 23
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
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PD 97378A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
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PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationAUIRLS3034-7P AUTOMOTIVE GRADE. HEXFET Power MOSFET
Features Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS
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Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
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Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
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PD -9744A IRFS37PbF IRFSL37PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE GRADE. Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 1.32 R JA Junction-to-Ambient ( PCB Mount) 50 C/W
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More information1412 P C = 25 C Maximum Power Dissipation 300 Linear Derating Factor. V/ns T J. Thermal Resistance Symbol Parameter Typ. Max.
PD 9699A HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationAUTOMOTIVE GRADE. 68 P C = 25 C Power Dissipation 45 Linear Derating Factor. mj I AR Avalanche Currentc 10 E AR Repetitive Avalanche Energy c 4.
Features l Advanced Planar Technology l Low On-Resistance l ynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free,
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationAUTOMOTIVE MOSFET. 240 P C = 25 C Power Dissipation 110 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for
More informationAUTOMOTIVE GRADE. Base part number Package Type Standard Pack Orderable Part Number
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationV DSS. 40V R DS(on) typ. 1.4mΩ max. 1.8mΩ 250Ac. I D (Silicon Limited) I D (Package Limited) 195A. HEXFET Power MOSFET.
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationAUTOMOTIVE GRADE. Orderable Part Number AUIRFZ44Z TO-220 Tube 50 AUIRFZ44Z AUIRFZ44ZS D 2 Tube 50 AUIRFZ44ZS Tape and Reel Left 800 AUIRFZ44ZSTRL
Features Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * AUTOMOTIVE
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 27
PD 96329 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationAUIRFR540Z AUIRFU540Z
AUTOMOTIVE GRADE AUIRFR540Z AUIRFU540Z Application Automatic Voltage Regulator (AVR) Solenoid Injection Body Control Low Power Automotive Applications V DSS HEXFET Power MOSFET 0V R DS(on) typ. 22.5m I
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
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I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
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I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationStrongIRFET IRL60B216
I D, Drain Current (A) StrongIRFET IRL6B26 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationW/ C V GS Gate-to-Source Voltage ±20 dv/dt Peak Diode Recovery f 4.6. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b, E AR
PD 97363 IRLB334PbF Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationAUTOMOTIVE GRADE. Standard Pack Orderable Part Number AUIRL3705Z TO-220 Tube 50 AUIRL3705Z AUIRL3705ZL TO-262 Tube 50 AUIRL3705ZL AUIRL3705ZS D 2 -Pak
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationStrongIRFET IRFB7740PbF
I D, Drain Current (A) StrongIRFET IRFB774PbF Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationW/ C V GS Gate-to-Source Voltage ± 30 dv/dt Peak Diode Recovery e 57
PD 974 HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J. mj I AR
PD 9687 IRFS367PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationBase Part Number Package Type Standard Pack Orderable Part Number
V DSS R DS(on) typ. max. I D 300V 25.5m 32m 70A Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits
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PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationIR MOSFET StrongIRFET IRF60R217
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
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I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Halfbridge and fullbridge topologies l Synchronous rectifier applications
More informationW/ C V GS Gate-to-Source Voltage ±16 dv/dt Peak Diode Recovery f 8.0. V/ns T J. mj I AR. Avalanche Current d A See Fig. 14, 15, 22a, 22b E AR
PD 97357 Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 32
PD 9747 IRFS457PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
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