V DSS V GS R DS(on) R DS(on) Q g tot Q gd Q gs2 Q rr Q oss V gs(th)
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1 Typical R S (on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (<0.7 mm) l ual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core C-C Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l % Rg tested pplicable irectfet Outline and Substrate Outline (see p.7,8 for details) irectfet Power MOSFET Typical values (unless otherwise specified) SQ SX ST MQ MX MT MP V SS V GS R S(on) R S(on) 30V max ±20V max.9mω@ V 2.7mΩ@ 4.5V MX irectfet ISOMETRIC escription The IRF8308MPbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced irectfet TM packaging to achieve the lowest onstate resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The irectfet package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note N-35 is followed regarding the manufacturing methods and processes. The irectfet package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF8308MPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency C-C converters that power the latest generation of processors operating at higher frequencies. The IRF8308MPbF has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dtinduced turn on immunity. The IRF8308MPbF offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. bsolute Maximum Ratings Parameter Max. Units V S rain-to-source Voltage 30 V V GS Gate-to-Source Voltage ±20 T = 25 C Continuous rain Current, V V e 27 T = 70 C Continuous rain Current, V V e 2 T C = 25 C Continuous rain Current, V V f 50 I M Pulsed rain Current g 22 E S Single Pulse valanche Energy h 2 mj I R valanche Currentg I = I = 2 IRF8308MPbF Q g tot Q gd Q gs2 Q rr Q oss V gs(th) 28nC 8.2nC 3.5nC 34nC 20nC.8V Orderable part number Package Type Standard Pack Form Quantity Note IRF8308MTRPbF irectfet Medium Can Tape and Reel 4800 "TR" suffix IRF8308MTRPbF irectfet Medium Can Tape and Reel 0 "TR" suffix EOL notice # 264 V S = 24V VS= 5V 4 2 T J = 25 C T J = 25 C V GS, Gate-to-Source Voltage (V) Fig. Typical On-Resistance Vs. Gate Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the irectfet Website. ƒ Surface mounted on in. square Cu board, steady state Q G Total Gate Charge (nc) Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage T C measured with thermocouple mounted to top (rain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.05mH, R G = 25Ω, I S = International Rectifier Submit atasheet Feedback February 24, 204
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250μ ΔΒV SS /ΔT J Breakdown Voltage Temp. Coefficient 22 mv/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance mω V GS = V, I = 27 i V GS = 4.5V, I = 2 i V GS(th) Gate Threshold Voltage V V S = V GS, I = μ ΔV GS(th) /ΔT J Gate Threshold Voltage Coefficient -6. mv/ C I SS rain-to-source Leakage Current.0 μ V S = 24V, V GS = 0V 50 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage n V GS = 20V Gate-to-Source Reverse Leakage - V GS = -20V gfs Forward Transconductance 30 S V S = 5V, I =2 Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 8.4 V S = 5V Q gs2 Post-Vth Gate-to-Source Charge 3.5 nc V GS = 4.5V Q gd Gate-to-rain Charge 8.2 I = 2 Q godr Gate Charge Overdrive 7.9 See Fig. 5 Q sw Switch Charge (Q gs2 Q gd ) 2 Q oss Output Charge 20 nc V S = 6V, V GS = 0V R G Gate Resistance Ω t d(on) Turn-On elay Time V = 5V, V GS = 4.5VÃi t r Rise Time 9 I = 2 t d(off) Turn-Off elay Time 23 ns R G =.8Ω t f Fall Time 6 C iss Input Capacitance 4404 V GS = 0V C oss Output Capacitance 885 pf V S = 5V C rss Reverse Transfer Capacitance 424 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current 50 ƒ =.0MHz Conditions MOSFET symbol (Body iode) showing the I SM Pulsed Source Current 22 integral reverse (Body iode)ãg p-n junction diode. V S iode Forward Voltage.0 V T J = 25 C, I S = 2, V GS = 0V i t rr Reverse Recovery Time ns T J = 25 C, I F =2 Q rr Reverse Recovery Charge 34 5 nc di/dt = 300/μs i Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400μs; duty cycle 2% International Rectifier Submit atasheet Feedback February 24, 204
3 bsolute Maximum Ratings Parameter Max. Units = 25 C Power issipation e 2.8 W = 70 C Power issipation e.8 C = 25 C Power issipation f 89 T P Peak Soldering Temperature 270 C Operating Junction and -40 to 50 T J T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θj Junction-to-mbient el 45 R θj Junction-to-mbient jl 2.5 R θj Junction-to-mbient kl 20 C/W R θjc Junction-to-Case fl.4 R θj-pcb Junction-to-PCB Mounted.0 Linear erating Factor e W/ C Thermal Response ( Z thj ) 0. = SINGLE PULSE Notes: ( THERML RESPONSE ). uty Factor = t/t2 2. Peak Tj = P dm x Zthja Tc 0.0 E-006 E t, Rectangular Pulse uration (sec) Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-mbient Notes: ˆ Used double sided cooling, mounting pad with large heatsink. Š R θ is measured at T J of approximately 90 C. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. τj τj τ τ Ci= τi/ri R R 2 R 3 R R 2 R 3 τ 2 τ 3 τ 2 τ 3 R4 R4 τ4 τ4 τa Ri ( C/W) τι (sec) ƒ Surface mounted on in. square Cu (still air). Mounted to a PCB with small clip heatsink (still air) Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) International Rectifier Submit atasheet Feedback February 24, 204
4 C, Capacitance(pF) Typical R S (on) (mω) I, rain-to-source Current (Α) Typical R S(on) (Normalized) I, rain-to-source Current () I, rain-to-source Current () IRF8308MPbF 0 VGS TOP V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V BOTTOM 2.5V 0 VGS TOP V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V BOTTOM 2.5V 2.5V 2.5V 60μs PULSE WITH Tj = 25 C V S, rain-to-source Voltage (V) Fig 4. Typical Output Characteristics 60μs PULSE WITH Tj = 50 C 0. V S, rain-to-source Voltage (V) Fig 5. Typical Output Characteristics I = 27 VGS = 4.5V V GS = V T J = 50 C T J = 25 C T J = -40 C.5.0 V S = V 60μs PULSE WITH V GS, Gate-to-Source Voltage (V) Fig 6. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 7. Normalized On-Resistance vs. Temperature V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd C iss Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = V 0 C oss 3 C rss 2 V S, rain-to-source Voltage (V) Fig 8. Typical Capacitance vs.rain-to-source Voltage I, rain Current () Fig 9. Typical On-Resistance Vs. rain Current and Gate Voltage International Rectifier Submit atasheet Feedback February 24, 204 T J = 25 C
5 I, rain Current () E S, Single Pulse valanche Energy (mj) Typical V GS(th) Gate threshold Voltage (V) I, rain-to-source Current () IRF8308MPbF OPERTION IN THIS RE LIMITE BY R S (on) I S, Reverse rain Current ().0 T J = 50 C T J = 25 C T J = -40 C.0.0 V GS = 0V V S, Source-to-rain Voltage (V) Fig. Typical Source-rain iode Forward Voltage msec μsec T = 25 C Tj = 50 C msec Single Pulse V S, rain-tosource Voltage (V) Fig. Maximum Safe Operating rea I = μ T C, Case Temperature ( C) Fig 2. Maximum rain Current vs. Case Temperature T J, Junction Temperature ( C ) Fig 3. Typical Threshold Voltage vs. Junction Temperature I TOP BOTTOM Starting T J, Junction Temperature ( C) Fig 4. Maximum valanche Energy Vs. rain Current International Rectifier Submit atasheet Feedback February 24, 204
6 Vds Id Vgs 0 K UT L VCC Vgs(th) Qgs Qgs2 Qgd Qgodr Fig 5a. Gate Charge Test Circuit Fig 5b. Gate Charge Waveform 5V tp V (BR)SS V S L RIVER VR GSG 20V tp.u.t I S 0.0Ω - V I S Fig 6a. Unclamped Inductive Test Circuit Fig 6b. Unclamped Inductive Waveforms V GS V S R.U.T. V S 90% R G VV GS - V % V GS Pulse Width µs uty Factor 0. % t d(on) t r t d(off) t f Fig 7a. Switching Time Test Circuit Fig 7b. Switching Time Waveforms International Rectifier Submit atasheet Feedback February 24, 204
7 -.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test V - Re-pplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 8. iode Reverse Recovery Test Circuit for N-Channel HEXFET Power MOSFETs irectfet Substrate and PCB Layout, MX Outline (Medium Size Can, X-esignation). Please see N-35 for irectfet assembly details and stencil and substrate design recommendations G = GTE = RIN S = SOURCE G S S Note: For the most current drawing please refer to IR website at: International Rectifier Submit atasheet Feedback February 24, 204
8 irectfet Outline imension, MX Outline (Medium Size Can, X-esignation) Please see N-35 for irectfet assembly details, stencil and substrate design recommendations IMENSIONS METRIC IMPERIL COE MIN 6.25 MX 6.35 MIN MX B C E F G H J K L M R P imensions are shown in millimeters (inches) irectfet Part Marking GTE MRKING LOGO PRT NUMBER BTCH NUMBER TE COE Line above the last character of the date code indicates "Lead-Free" Note: For the most current drawing please refer to IR website at: International Rectifier Submit atasheet Feedback February 24, 204
9 irectfet Tape & Reel imension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts (ordered as IRF8308MTRPBF). COE B C E F G H REEL IMENSIONS STNR OPTION (QTY 4800) METRIC MIN MX MIN IMPERIL MX LOE TPE FEE IRECTION NOTE: CONTROLLING IMENSIONS IN MM COE B C E F G H IMENSIONS METRIC MIN MX IMPERIL MIN MX Note: For the most current drawing please refer to IR website at: International Rectifier Submit atasheet Feedback February 24, 204
10 Qualification Information Qualification level Consumer (per JEEC JES47F guidelines) Comments: This family of products has passed JEEC s Industrial qualification. IR s Consumer qualification level is granted by extension of the higher Industrial level. Moisture Sensitivity Level RoHS Compliant FET2 MSL (per JEEC J-ST-020 ) Yes Qualification standards can be found at International Rectifier s web site Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: pplicable version of JEEC standard at the time of product release. Revision History ate 2/24/204 Comments Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #264) dded Qualification table on page Updated data sheet with new IR corporate template IR WORL HEQURTERS: N. Sepulveda Blvd., El Segundo, California 90245, US To contact International Rectifier, please visit International Rectifier Submit atasheet Feedback February 24, 204
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PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
Generation V Technology l l Ultra Low OnResistance l PChannel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
P-900 IRF7809V N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications % Tested for R
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationV DSS R DS(on) max Qg 30V GS = 10V 5.4nC
PD - 96227B Applications l Synchronous Buck Converter for Computer Processor Power l Isolated DC to DC Converters for Network and Telecom l Buck Converters for Set-Top Boxes l System/load switch Benefits
More informationIRLMS5703PbF. HEXFET Power MOSFET V DSS = -30V. R DS(on) = 0.18Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) Pchannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.8 C/W)
PD -97538A IRFH5025PbF HEXFET Power MOSFET V DS 250 V R DS(on) max (@V GS = V) 0 mω Q g (typical) 37 nc R G (typical).6 Ω I D (@T c(bottom) = 25 C) 25 A PQFN 5X6 mm Applications Secondary Side Synchronous
More informationIRLMS6702PbF HEXFET Power MOSFET
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) PChannel MOSFET LeadFree escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationIRF9910PbF HEXFET Power MOSFET R DS(on) max
Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
More information100% Rg tested Increased Reliability
V DS 20 V V gs max ± 12 V R DS(on) max (@V GS = 4.5V) 3.0 (@V GS = 2.5V) 4.0 Q g typ 44 nc 80i A I D (@T c(bottom) = 25 C) mω HEXFET Power MOSFET PQFN 5X6 mm Applications Battery Protection Switch Features
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationIRF7240PbF HEXFET Power MOSFET
l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount vailable in Tape & Reel Lead-Free P- 95253 IRF7240PbF HEXFET Power MOSFET V SS R S(on) max I -40V 0.05@V GS = -0V -0.5 0.025@V GS = -4.5V
More informationIRF7811AVPbF IRF7811AVPbF
P-9525 IRF78VPbF IRF78VPbF N-Channel pplication-specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications %
More informationIRLMS1503PbF. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
l l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET Lead-Free escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
l Generation V Technology l Ultra Low On-Resistance l ual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D
l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P - 93999 IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V 2.7 0.20@V
More informationV DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
More informationV DSS R DS(on) max I D. 20V GS = 10V 8.9A. 71 P A = 25 C Power Dissipation 2.0 P A = 70 C Power Dissipation Linear Derating Factor
Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box PD - 95858A IRF895 HEXFET Power MOSFET V DSS R DS(on) max I D 20V 8.3m:@V GS = V 8.9A
More informationBase part number Package Type IRFP4137PbF TO-247AC Tube 25 IRFP4137PbF
IRFP437PbF pplication High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D HEXFET Power MOSFET V DSS R
More informationIRF3709ZCS IRF3709ZCL
PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
More informationOrdering Information Base Part Number Package Type Standard Pack Complete Part Number 500 I D = 100A T J = 125 C 200 I D,
R DS(on), Drain-to -Source On Resistance (m Ω) I D, Drain Current (A) StrongIRFET TM Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge
More informationIRFR1018EPbF IRFU1018EPbF
PD - 9729A IRFR8EPbF IRFU8EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationLower Conduction Losses
IRFH420PbF HEXFET Power MOSFET V DSS 25 V R DS(on) max (@ V GS = 0V) 0.95 (@ V GS = 4.5V).25 m Qg (typical) 46.0 nc I D (@T C (Bottom) = 25 C) A PQFN 5X6 mm Applications Synchronous Rectifier MOSFET for
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationIRFHM9331PbF. HEXFET Power MOSFET. V DS -30 V R DS(on) max mω. Q g (typical) 32 nc I D -11 A. Absolute Maximum Ratings
P 9633 HEXFET Power MOFET V 3 V R (on) max (@V G = V) 4.6 mω Q g (typical) 32 nc I (@T A = 25 C) A 5 6 7 8 G 4 3 2 G 3mm x 3mm PQFN Applications l ystem/load switch Features and Benefits Features Benefits
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationAUTOMOTIVE GRADE. Orderable Part Number AUIRF7416Q SO-8 Tape and Reel 4000 AUIRF7416QTR
UTOMOTIVE GRE UIRF746Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
More informationIRF7821PbF. HEXFET Power MOSFET
Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l High Frequency C-C Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power P - 93843C
More informationV DSS R DS(on) max Qg. 560 P C = 25 C Maximum Power Dissipation g 140 P C = 100 C Maximum Power Dissipation g Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationAUTOMOTIVE GRADE. Top View
UTOMOTIVE GRE UIRF7207Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P-Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free,
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
HEXFET Power MOFET P - 9530 IRF7403PbF l Generation V Technology l Ultra Low On-Resistance 8 l N-Channel Mosfet 2 7 l urface Mount l vailable in Tape & Reel 3 6 l ynamic dv/dt Rating 4 5 G l Fast witching
More informationDirect Drive at High V GS. IRF9388PbF SO8 Tube/Bulk 95 IRF9388TRPbF SO8 Tape and Reel 4000
PD 9752 IRF9388PbF HEXFET Power MOSFET V DS 3 V V GS max ±25 V R DS(on) max (@V GS = V).9 mω I D (@T A = 25 C) 2 A * SO8 Applications Adaptor Input Switch for Notebook PC Features and Benefits Features
More informationN-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET SO-8
l Generation Technology l Ultra Low OnResistance l ual N and P Channel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching l LeadFree escription Fifth Generation HEXFETs
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l l Surface Mount (IRLR20N) Straight Lead (IRLU20N) dvanced Process Technology Fast Switching Fully valanche Rated Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
More informationV DSS R DS(on) max Qg. 30V 3.3m: 34nC
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationAUTOMOTIVE GRADE. Outline and Substrate Outline SB SC M2 M4 L4 L6 L8
UTOMOTIVE RE dvanced Process Technology Optimized for utomotive Motor rive, C-C and other Heavy Load pplications Exceptionally mall Footprint and Low Profile High Power ensity Low Parasitic Parameters
More information