IRGB4086PbF IRGS4086PbF
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- Britton Neal
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1 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package PDP TRENCH IGBT IRGB486PbF IRGS486PbF Key Parameters V CE min 3 V V CE(ON) I C = 7A 1.9 V I RP T C = 25 C c 25 A T J max 15 C C PD G E C G E C G E n-channel TO-22AB IRGB486PbF D 2 Pak IRGS486PbF G C E Gate Collector Emitter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low V CE(on) and low E TM PULSE rating per silicon area which improve panel efficiency. Additional features are 15 C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Max. Units V GE Gate-to-Emitter Voltage ±3 V I T C = 25 C Continuous Collector Current, V 15V 7 A I T C = 1 C Continuous Collector, V 15V 4 I T C = 25 C Repetitive Peak Current c 25 P C = 25 C Power Dissipation 16 W P C = 1 C Power Dissipation Linear Derating Factor W/ C T J Operating Junction and -4 to + 15 C T STG Storage Temperature Range Soldering Temperature for 1 seconds Mounting Torque, 6-32 or M3 Screw 3 1lbxin (1.1Nxm) N Thermal Resistance Parameter Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) d.8 R θcs Case-to-Sink (flat, greased surface).24 C/W R θja Junction-to-Ambient (typical socket mount) df 4 Weight 6. (.21) g (oz) 1 2/2/9
2 IRGB/S486PbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units BV CES Collector-to-Emitter Breakdown Voltag 3 V ΒV CES / T J Breakdown Voltage Temp. Coefficient.29 V/ C V CE(on) Static Collector-to-Emitter Voltage V V GE(th) Gate Threshold Voltage V Gate-to-Emitter Reverse Leakage -1 g fe Forward Transconductance 29 S Q g Total Gate Charge 65 nc Conditions V GE = V, I CE = 1 ma Reference to 25 C, I CE = 1mA V GE = 15V, I CE = 25A e V GE = 15V, I CE = 4A e V GE = 15V, I CE = 7A e V GE = 15V, I CE = 12A e V GE = 15V, I CE = 7A, T J = 15 C V CE = V GE, I CE = 5µA V GE(th) / T J Gate Threshold Voltage Coefficient -11 mv/ C I CES Collector-to-Emitter Leakage Current µa V CE = 3V, V GE = V 5. V CE = 3V, V GE = V, T J = 1 C 1 V CE = 3V, V GE = V, T J = 15 C I GES Gate-to-Emitter Forward Leakage 1 na V GE = 3V V GE = -3V V CE = 25V, I CE = 25A V CE = 2V, I C = 25A, V GE = 15Ve Q gc Gate-to-Collector Charge 22 t d(on) Turn-On delay time 36 I C = 25A, V CC = 196V t r Rise time 31 ns R G = 1Ω, L=2µH, L S = 2nH t d(off) Turn-Off delay time 112 T J = 25 C t f Fall time 65 t d(on) Turn-On delay time 3 I C = 25A, V CC = 196V t r Rise time 33 ns R G = 1Ω, L=2µH, L S = 2nH t d(off) Turn-Off delay time 145 T J = 15 C t f Fall time 98 t st Shoot Through Blocking Time 1 ns V CC = 24V, V GE = 15V, R G = 5.1Ω L = 22nH, C=.4µF, V GE = 15V 175 E PULSE Energy per Pulse µj V CC = 24V, R G = 5.1Ω, T J = 25 C 1432 L = 22nH, C=.4µF, V GE = 15V V CC = 24V, R G = 5.1Ω, T J = 1 C C iss Input Capacitance 225 V GE = V C oss Output Capacitance 11 pf V CE = 3V C rss Reverse Transfer Capacitance 58 ƒ = 1.MHz, See Fig.13 L C Internal Collector Inductance 5. Between lead, nh 6mm (.25in.) L E Internal Emitter Inductance 13 from package and center of die contact Notes: Half sine wave with duty cycle =.1, ton=2µsec. R θ is measured at T J of approximately 9 C. ƒ Pulse width 4µs; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G-1 Material). For recomended footprint and soldering techniques refer to application note #AN
3 I CE (A) I CE (A) I CE (A) I CE (A) I CE (A) IRGB/S486PbF V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V Fig 1. Typical Output 25 C Fig 2. Typical Output 75 C V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V Fig 3. Typical Output 125 C Fig 4. Typical Output 15 C 24 1 I C = 25A T J = 25 C T J = 15 C 8 6 T J = 25 C T J = 15 C V GE (V) V GE (V) Fig 5. Typical Transfer Characteristics Fig 6. V CE(ON) vs. Gate Voltage 3
4 Energy per Pulse (µj) I C (A) Energy per Pulse (µj) Energy per Pulse (µj) I C, Collector Current (A) Repetitive Peak Current (A) IRGB/S486PbF T C, Case Temperature ( C) Fig 7. Maximum Collector Current vs. Case Temperature V CC = 24V L = 22nH C = variable 1 C I C, Peak Collector Current (A) 25 C 1 ton= 2µs Duty cycle =.1 Half Sine Wave Case Temperature ( C) Fig 8. Typical Repetitive Peak Current vs. Case Temperature L = 22nH C =.4µF 1 C 25 C V CE, Collector-to-Emitter Voltage (V) Fig 9. Typical E PULSE vs. Collector Current Fig 1. Typical E PULSE vs. Collector-to-Emitter Voltage 2 V CC = 24V 1 16 L = 22nH t = 1µs half sine C=.4µF µs 1 µs 8 C=.3µF 1 1ms 4 C=.2µF T J, Temperature (ºC) Fig 11. E PULSE vs. Temperature Fig 12. Forward Bias Safe Operating Area 4
5 Capacitance (pf) V GE, Gate-to-Source Voltage (V) IRGB/S486PbF 1 25 I D = 25A 1 Cies 2 15 V DS = 24V V DS = 2V V DS = 15V 1 1 Coes Cres Q G Total Gate Charge (nc) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 Thermal Response ( Z thjc ) D = R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri τ C τ Ri ( C/W) τι (sec) SINGLE PULSE ( THERMAL RESPONSE ) 1E-6 1E t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT) 5
6 IRGB/S486PbF A RG DRIVER C PULSE A L VCC PULSE B B RG Ipulse DUT t ST Fig 16a. t st and E PULSE Test Circuit Fig 16b. t st Test Waveforms V CE Energy I C Current 1K DUT L VCC Fig 16c. E PULSE Test Waveforms Fig Gate Charge Circuit (turn-off) 6
7 IRGB/S486PbF TO-22AB Package Outline Dimensions are shown in millimeters (inches) TO-22AB Part Marking Information (;$3/( 7+,6,6$1,5) /27&2'( $66(%/('21::,17+($66(%/</,1(& 1RWH3LQDVVHPEO\OLQHSRVLWLRQ LQGLFDWHV/HDG)UHH,17(51$7,21$/ 5(&7,),(5 /2*2 $66(%/< /27&2'( 3$5718%(5 '$7(&2'( <($5 :((. /,1(& TO-22AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: 7
8 IRGB/S486PbF D 2 Pak Package Outline (Dimensions are shown in millimeters (inches)) D 2 Pak Part Marking Information UCDTDT6IDSA$"TXDUC GPU8P9@'!# 6TT@H7G@9PIXX!! DIUC@6TT@H7G`GDI@G DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G` GPU8P9@ A$"T Q6SUIVH7@S 96U@8P9@ `@6S2! X@@F! GDI@G UCDTDT6IDSA$"TXDUC GPU8P9@'!# For GB Production 6TT@H7G@9PIXX!! DIUC@6TT@H7G`GDI@G DIU@SI6UDPI6G S@8UDAD@S GPBP A$"T Q6SUIVH7@S GPU8P9@ 96U@8P9@ Note: For the most current drawing please refer to IR website at: 8
9 IRGB/S486PbF D 2 Pak Tape & Reel Information TRR 1.6 (.63) 1.5 (.59) 4.1 (.161) 3.9 (.153) 1.6 (.63) 1.5 (.59).368 (.145).342 (.135) FEED DIRECTION TRL 1.85 (.73) 1.65 (.65) 11.6 (.457) 11.4 (.449) (.69) (.61) 24.3 (.957) 23.9 (.941) 1.9 (.429) 1.7 (.421) 16.1 (.634) 15.9 (.626) 1.75 (.69) 1.25 (.49) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.5 (.532) 12.8 (.54) 27.4 (1.79) 23.9 (.941) (14.173) MAX. 6. (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.39) 24.4 (.961) (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at: Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information.2/29 9
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET Power MOSFET R DS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l l
More informationFeatures. n-channel TO-220AB. 1
PD-95640 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications 2.5kV, 60s insulation voltage Industry-benchmark switching losses
More informationn-channel TO-220AB 1
PD -949A IRG4BC3KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, t sc =µs,
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationn-channel Features 1 TO-247AD Pulse Collector CurrentÃc 82 I LM
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFRED TM ultrafast
More informationIRF530NSPbF IRF530NLPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationA I T C = 25 C Continuous Drain Current, V 10V (Package Limited) 560 P C = 25 C Power Dissipation 330 Linear Derating Factor
PD - 95758A Features l Designed to support Linear Gate Drive Applications l 175 C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationFeatures. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @36V V CE (start), T J = 25 C, V GE = 5V Combines low conduction
More informationIRL3803VSPbF IRL3803VLPbF HEXFET Power MOSFET
l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationIRFR1018EPbF IRFU1018EPbF
PD - 9729A IRFR8EPbF IRFU8EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD - 96896 AUTOMOTIVE MOSFET Features llogic Level ladvanced Process Technology lultra Low On-Resistance l175 C Operating Temperature lfast Switching lrepetitive Avalanche Allowed up to Tjmax Description
More informationIRG7PH28UD1PbF IRG7PH28UD1MPbF
IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) trench IGBT technology Low switching
More informationAbsolute Maximum Ratings Max. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features Logic Level Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD -957 INSULTED GTE BIPOLR TRNSISTOR IRG4PC4SPbF Standard Speed IGBT Features C Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides
More informationG D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
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