IRG4BC10SD-SPbF IRG4BC10SD-LPbF
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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop 2A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. Very Tight Vce(on) distribution IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard D 2 Pak & TO-262 packages Lead-Free Benefits Generation 4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing Lower losses than MOSFET's conduction and Diode losses Absolute Maximum Ratings IRG4BCSD-SPbF IRG4BCSD-LPbF Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT 3.3 R θjc Junction-to-Case - Diode 7.0 C/W R θcs Case-to-Sink, flat, greased surface 0.50 R θja Junction-to-Ambient, typical socket mount 80 R θja Junction-to-Ambient (PCB Mount, steady state) 40 Wt Weight 2.0(0.07) g (oz) 1 G C E n-channel Standard Speed CoPack IGBT V CES = 600V V CE(on) typ. = GE = 15V, I C = 2.0A Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I T C = 25 C Continuous Collector Current 14 I T C = 0 C Continuous Collector Current 8.0 I CM Pulsed Collector Current 18 A I LM Clamped Inductive Load Current 18 I T C = 0 C Diode Continuous Forward Current 4.0 I FM Diode Maximum Forward Current 18 V GE Gate-to-Emitter Voltage ± 20 V P T C = 25 C Maximum Power Dissipation 38 P T C = 0 C Maximum Power Dissipation 15 W T J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for sec. 300 (0.063 in. (1.6mm) from case) Thermal Resistance D 2 Pak IRG4BCSD-S PD TO-262 IRG4BCSD-L 08/27/04
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 V V GE = 0V, I C = 250µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.64 V/ C V GE = 0V, I C = 1.0mA V CE(on) Collector-to-Emitter Saturation Voltage I C = 8.0A V GE = 15V 2.05 V I C = 14.0A See Fig. 2, I C = 8.0A, T J = 150 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -9.5 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance S V CE = 0V, I C =8.0A I CES Zero Gate Voltage Collector Current 250 µa V GE = 0V, V CE = 600V 00 V GE = 0V, V CE = 600V, T J = 150 C V FM Diode Forward Voltage Drop V I C =4.0A See Fig I C =4.0A, T J = 150 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 8.0A Qge Gate - Emitter Charge (turn-on) nc V CC = 400V See Fig. 8 Q gc Gate - Collector Charge (turn-on) V GE = 15V t d(on) Turn-On Delay Time 76 T J = 25 C t r Rise Time 32 ns I C = 8.0A, V CC = 480V t d(off) Turn-Off Delay Time V GE = 15V, R G = 0Ω t f Fall Time Energy losses include "tail" and E on Turn-On Switching Loss 0.31 diode reverse recovery. E off Turn-Off Switching Loss 3.28 mj See Fig. 9,, 18 E ts Total Switching Loss E ts Total Switching Loss mj I C = 5.0A t d(on) Turn-On Delay Time 70 T J = 150 C, See Fig.,11, 18 t r Rise Time 36 ns I C = 8.0A, V CC = 480V t d(off) Turn-Off Delay Time 890 V GE = 15V, R G = 0Ω t f Fall Time 890 Energy losses include "tail" and E ts Total Switching Loss 3.83 mj diode reverse recovery. L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 280 V GE = 0V C oes Output Capacitance 30 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 4.0 ƒ = 1.0MHz t rr Diode Reverse Recovery Time ns T J = 25 C See Fig T J = 125 C 14 I F =4.0A I rr Diode Peak Reverse Recovery Current A T J = 25 C See Fig T J = 125 C 15 V R = 200V Q rr Diode Reverse Recovery Charge nc T J = 25 C See Fig T J = 125 C 16 di/dt = 200A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 280 A/µs T J = 25 C See Fig. During t b 235 T J = 125 C 17 Details of note through are on the last page 2
3 Load Current ( A ) IRG4BCSD-S/LPbF % of rated voltage Duty cycle : 50% Tj = 125 C Tsink = 90 C Ta = 55 C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 9.2W for Heatsink Mount Power Dissipation = 1.8W for typical PCB socket Mount 4.0 Ideal diodes f, Frequency ( khz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 0 0 I C, Collector Current (A) T J = 25 C T J = 150 C V GE = 15V 80µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 150 C T J = 25 C V CC = 50V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3
4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) V GE = 15V 80 us PULSE WIDTH I C = I C = I C = 16 A 8 A 4 A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t Peak T J = PDM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4
5 C, Capacitance (pf) VGE = 0V, f = 1MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 400V I C = 8A V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 480V V GE = 15V T = 25 J C I C = 8A Total Switching Losses (mj) 0 1 R G = 0Ω Ohm V GE = 15V V CC = 480V I C= I C= I C= 16A 8A 4A R GR G, Gate, Gate Resistance (Ohm) (Ω) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5
6 Total Switching Losses (mj) R G = 0 Ω T J = 150 C V CC = 480V V GE = 15V I C, Collector Current (A) 0 V GE = 20V o T J = 125 C I C, Collector Current (A) SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig Typical Switching Losses vs. Collector Current 0 Fig Turn-Off SOA Instantaneous Forward Current ( A ) 1 T J = 150 C T = 125 C J T = 25 C J Forward Voltage Drop - V Forward Voltage Drop - V FM FM( V ) Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 (V)
7 I F = 8.0A I F = 4.0A V R = 200V T J = 125 C T J = 25 C I F = 8.0A I F = 4.0A trr- (nc) 35 Irr- ( A) V R = 200V T J = 125 C T J = 25 C 0 00 di f /dt - (A/µs) Fig Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig Typical Recovery Current vs. di f /dt 200 V R= 200V T J = 125 C T J = 25 C 00 V R = 200V T J = 125 C T J = 25 C 160 I F = 8.0A I F = 8.0A Qrr- (nc) I F = 4.0A di (rec) M/dt- (A /µs) I F = 4.0A di f /dt - (A/µs) Fig Typical Stored Charge vs. di f /dt di f /dt - (A/µs) Fig Typical di (rec)m /dt vs. di f /dt, A 7
8 Same type device as D.U.T. 80% of Vce 430µF D.U.T. 90% V ge % VC 90% t d(off) Fig. 18a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f I 5% % C t d(on) tr E on t f Eoff t=5µs E ts = (E on +E off ) Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt dt = tx % Ic Vcc td(on) t1 Vce tr 90% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t1 t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8
9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit 00V L V * c D.U.T V R L = 480V 4 X I C 50V 6000µF 0V Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit 9
10 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L INTERNATIONAL RECTIFIER LOGO AS S E MBL Y LOT CODE F530S PART NUMBER DATE CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = AS S E MBL Y S ITE CODE
11 TO-262 Package Outline Dimensions are shown in millimeters (inches) IRG4BCSD-S/LPbF TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL33L LOT CODE 1789 AS SEMBLE D ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" OR INT ERNATIONAL RECT IFIER LOGO AS S EMBL Y LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YE AR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE 11
12 D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065).90 (.429).70 (.421) (.457) (.449) 16. (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MAX. 4 Notes: Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20) V CC =80%(V CES ), V GE =20V, L=µH, R G = 0W (figure 19) ƒpulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. This only applies to TO-262 package. This applies to D 2 Pak, when mounted on 1" square PCB ( FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.08/
13 Note: For the most current drawings please refer to the IR website at:
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SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for Improved Panel Efficiency l High
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SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
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PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
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PDP TRENCH IGBT PD - 97484 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved
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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
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INT-A-PAK "Half-Bridge" IGBT INT-A-PAK FEATURES Vishay High Power Products Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 khz to 4 khz in hard switching, > 2 khz in resonant mode Very
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) trench IGBT technology Low switching
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PD-97014C HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE G300HHCK12P2 Product Summary Part Number V CE I C V CE(SAT) G300HHCK12P2 1200V 300A 2.2 HiRel TM INT-A-Pak 2 The HiRel TM INT-A-Pak series
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
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PD -90718B INSULATED GATE BIPOLAR TRANSISTOR IRGMC50F Fast Speed IGBT Features Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 khz - 8 khz Switching-loss
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95661 IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationFeatures TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free
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Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
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PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
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