IRGPH50FD2 Fast CoPack IGBT

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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency curve Description G E n-channel o-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications. PD IRGPH5FD2 Fast opack IGBT V ES = 2V V E(sat) GE = 5V, I = 25A Absolute Maximum Ratings Thermal Resistance TO-247A Parameter Max. Units V ES ollector-to-emitter Voltage 2 V T = 25 ontinuous ollector urrent 45 T = ontinuous ollector urrent 25 I M Pulsed ollector urrent 9 A I LM lamped Inductive Load urrent 9 I T = Diode ontinuous Forward urrent 6 I FM Diode Maximum Forward urrent 9 V GE Gate-to-Emitter Voltage ± 2 V P T = 25 Maximum Power Dissipation 2 W P T = Maximum Power Dissipation 78 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Parameter Min. Typ. Max. Units R θj Junction-to-ase - IGBT.64 R θj Junction-to-ase - Diode.83 /W R θs ase-to-sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz) -293 Revision

2 IRGPH5FD2 Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 2 V V GE = V, I = 25µA V (BR)ES/ T J Temperature oeff. of Breakdown Voltage. V/ V GE = V, I =.ma V E(on) ollector-to-emitter Saturation Voltage I = 25A V GE = 5V 2.5 V I = 45A See Fig. 2, 5 3. I = 25A, T J = 5 V GE(th) Gate Threshold Voltage V E = V GE, I = 25µA V GE(th) / T J Temperature oeff. of Threshold Voltage -4 mv/ V E = V GE, I = 25µA g fe Forward Transconductance S V E = V, I = 25A I ES Zero Gate Voltage ollector urrent 25 µa V GE = V, V E = 2V 65 V GE = V, V E = 2V, T J = 5 V FM Diode Forward Voltage Drop V I = 6A See Fig I = 6A, T J = 5 I GES Gate-to-Emitter Leakage urrent ± na V GE = ±2V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) 82 I = 25A Q ge Gate - Emitter harge (turn-on) 6 2 n V = 4V Q gc Gate - ollector harge (turn-on) 3 43 See Fig. 8 t d(on) Turn-On Delay Time 77 T J = 25 t r Rise Time 75 ns I = 25A, V = 8V t d(off) Turn-Off Delay Time V GE = 5V, R G = 5.Ω t f Fall Time Energy losses include "tail" and E on Turn-On Switching Loss 3.2 diode reverse recovery. E off Turn-Off Switching Loss 5.8 mj See Fig. 9,,, 8 E ts Total Switching Loss t d(on) Turn-On Delay Time 7 T J = 5, See Fig. 9,,, 8 t r Rise Time 7 ns I = 25A, V = 8V t d(off) Turn-Off Delay Time 66 V GE = 5V, R G = 5.Ω t f Fall Time 64 Energy losses include "tail" and E ts Total Switching Loss 6.2 mj diode reverse recovery. L E Internal Emitter Inductance 3 nh Measured 5mm from package ies Input apacitance 24 V GE = V oes Output apacitance 4 pf V = 3V See Fig. 7 res Reverse Transfer apacitance 28 ƒ =.MHz t rr Diode Reverse Recovery Time 9 35 ns T J = 25 See Fig T J = 25 4 I F = 6A I rr Diode Peak Reverse Recovery urrent 5.8 A T J = 25 See Fig T J = 25 5 V R = 2V Q rr Diode Reverse Recovery harge n T J = 25 See Fig T J = 25 6 di/dt = 2A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 2 A/µs T J = 25 See Fig. During t b 76 T J = 25 7 Notes: Repetitive rating; V GE =2V, pulse width limited by max. junction temperature. ( See fig. 2 ) V =8%(V ES ), V GE =2V, L=µH, R G = 5.Ω, ( See fig. 9 ) Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. -294

3 IRGPH5FD2 3 Load urrent (A) 2 6 % o f ra te d v o lta g e Duty cycle : 5% T J = 2 5 T s in k = 9 G a te d riv e a s s p e ci fie d T u rn -o n lo s s e s in clu d e effects of reverse recovery P o w e r D is s ip a tio n = 4 W A. f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (Load urrent = I RMS of fundamental) I, ollector-to-emitter urrent (A ) T J = 25 T J = 5 V G E = 5V 2 µs P U LS E W IDTH V E, ollector-to-em itter V oltage (V) I, ollector-to-emitter urrent (A ) T J = 5 T J = 2 5 V = V 5 µs P UL S E W IDTH V G E, G ate -to-e m itter V olta ge (V ) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics -295

4 IRGPH5FD2 M aximum D ollector urrent (A ) V G E = 5 V V E, olle ctor-to-em itte r Volta ge (V) V G E = 5 V 8 µs P UL S E W ID TH I = 5 A I = 25 A I = 3A T, ase Tem perature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, ase Tem perature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature T herma l R espo nse (Z thj ).. D = SIN G LE P U LSE (TH ER MA L R E SP O N SE ) N otes :. D uty fac tor D = t / t t, R ectangular Pulse Duration (sec) P D M t t 2 2. P ea k T J = P D M x Z thj + T Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-ase -296

5 IRGPH5FD2, apacitance (pf) V GE = V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V G E, Gate-to-Em itter Voltage (V ) V E = 4 V I = 2 5A V E, ollector-to-em itter V oltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Q, Total G ate harge (n) g Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V = 8V V GE = 5V T = 25 I = 25A Total Switching Losses (mj) R G = 5Ω V GE = 5V V = 8V I = 5A I = 25A I = 3A R G, Gate Resistance (Ω) A T, ase Temperature ( ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. ase Temperature -297

6 IRGPH5FD2 Total Switching Losses (mj) R G = 5Ω T = 5 V = 8V V GE = 5V I, o llec to r-to-e m itter urrent (A ) V G EE= 2 V T = 2 5 J S A FE O P E RA TING A RE A A I, ollector-to-emitter urrent (A) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent V E, o lle cto r-to-e m itte r V olta g e (V ) Fig. 2 - Turn-Off SOA Instantaneous Forward urrent - I F (A) T J = 5 T J = 25 T J = Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent -298

7 IRGPH5FD2 3 4 V R= 2V T J = 25 T J = 25 V R = 2V T J = 25 T J = trr - (ns) I F = 32A I F = 6A I F = 8.A I RRM - (A) 2 I F = 32A I F = 6A I F = 8.A di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µs) Fig. 5 - Typical Recovery urrent vs. di f /dt 2 V R = 2V T J = 25 T J = 25 V R= 2V T J = 25 T J = 25 9 Q RR - (n) 6 I F = 32A I F = 6A I F = 8.A di(rec)m/dt - (A/µs) I F =6A I F= 8.A I F= 32A 3 di f /dt - (A/µs) Fig. 6 - Typical Stored harge vs. di f /dt di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt -299

8 IRGPH5FD2 9% Vge Same type device as D.U.T. +Vge Vce 8% of Vce 43µF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig. 8a - Test ircuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µs Eoff = Vce ic dt t t Fig. 8b - Test Waveforms for ircuit of Fig. 8a, Defining E off, t d(off), t f t2 % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = ie dt Vce t t2 DUT VOLTAGE AND URRENT Vpk tx % Vcc Irr DIODE REVERSE REOVERY ENERGY % Irr DIODE REOVERY WAVEFORMS t4 Erec Vd id dt = t3 Vcc t3 t4 Fig. 8c - Test Waveforms for ircuit of Fig. 8a, Fig. 8d - Test Waveforms for ircuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr Refer to Section D for the following: Appendix H: Section D - page D- Fig. 8e - Macro Waveforms for Test ircuit Fig. 8a Fig. 9 - lamped Inductive Load Test ircuit Fig. 2 - Pulsed ollector urrent Test ircuit Package Outline 3 -JEDE Outline TO-247A Section D - page D-3-3

9 Note: For the most current drawings please refer to the IR website at:

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