TO-247AC Absolute Maximum Ratings

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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, V CC = 72V,, V GE = 5V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes IRG4PH5KDPbF G C E n-channel PD Short Circuit Rated UltraFast IGBT V CES = 2V V CE(on) typ. = GE = 5V, 24A Lead-Free Benefits Latest generation 4 IGBT's offer highest power density motor controls possible HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGPH5KD2 and IRGPH5MD2 products For hints see design tip 973 TO-247AC Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 2 V I T C = 25 C Continuous Collector Current 45 I T C = C Continuous Collector Current 24 I CM Pulsed Collector Current 9 A I LM Clamped Inductive Load Current 9 I T C = C Diode Continuous Forward Current 6 I FM Diode Maximum Forward Current 9 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P T C = 25 C Maximum Power Dissipation 2 P T C = C Maximum Power Dissipation 78 W T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT.64 R θjc Junction-to-Case - Diode.83 C/W R θcs Case-to-Sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz) 4/26/4

2 IRG4PH5KDPbF Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 2 V V GE = V, 25µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage.9 V/ C V GE = V,.mA V CE(on) Collector-to-Emitter Saturation Voltage A V GE = 5V 3.28 V 45A See Fig. 2, A, T J = 5 C V GE(th) Gate Threshold Voltage V CE = V GE, 25µA V GE(th) / T J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, 25µA g fe Forward Transconductance 3 9 S V CE = V, 24A I CES Zero Gate Voltage Collector Current 25 µa V GE = V, V CE = 2V 65 V GE = V, V CE = 2V, T J = 5 C V FM Diode Forward Voltage Drop V 6A See Fig A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) A Q ge Gate - Emitter Charge (turn-on) nc V CC = 4V See Fig.8 Q gc Gate - Collector Charge (turn-on) 7 V GE = 5V t d(on) Turn-On Delay Time 87 t r Rise Time T J = 25 C ns t d(off) Turn-Off Delay Time A, V CC = 8V t f Fall Time 2 3 V GE = 5V, R G = 5.Ω E on Turn-On Switching Loss 3.83 Energy losses include "tail" E off Turn-Off Switching Loss.9 mj and diode reverse recovery E ts Total Switching Loss See Fig. 9,,8 t sc Short Circuit Withstand Time µs V CC = 72V, V GE = 5V, R G = 5.Ω t d(on) Turn-On Delay Time 67 T J = 5 C, See Fig.,,8 t r Rise Time 72 24A, V CC = 8V ns t d(off) Turn-Off Delay Time 3 V GE = 5V, R G = 5.Ω, t f Fall Time 39 Energy losses include "tail" E ts Total Switching Loss 8.36 mj and diode reverse recovery L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 28 V GE = V C oes Output Capacitance 4 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 53 ƒ =.MHz t rr Diode Reverse Recovery Time 9 35 ns T J = 25 C See Fig I F = 6A I rr Diode Peak Reverse Recovery Current 5.8 A T J = 25 C See Fig V R = 2V Q rr Diode Reverse Recovery Charge nc T J = 25 C See Fig di/dt = 2A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 2 A/µs T J = 25 C See Fig. During t b

3 IRG4PH5KDPbF 3 LOAD CURRENT (A) Square wave: 6% of rated voltage I For both: Duty cycle: 5% T sink = 9 C Gate drive as specified Power Dissipation = 4W 5 Ideal diodes. f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T J = 5 C T J = 25 C V GE = 5V 2µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T = 5 J C T = 25 J C V CC = 5V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 IRG4PH5KDPbF Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) V GE = 5V 8 us PULSE WIDTH 48A 24A 2A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ).. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J = PDM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4

5 IRG4PH5KDPbF C, Capacitance (pf) 4 VGE = V, f = MHz Cies = Cge + Cgc, C ce SHORTED Cres = Cgc Coes = Cce + Cgc 3 C ies 2 C oes C res V CE, Collector-to-Emitter Voltage (V) V GE, Gate-to-Emitter Voltage (V) 2 V CC = 4V 24A Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 8V 96V V GE = 5V T = 25 J C 24A Total Switching Losses (mj) R G = Ohm 5.Ω V GE = 5V V CC = 96V 8V 48A 24A 2A R G R, G Gate, Gate Resistance (Ohm) ( Ω ) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5

6 IRG4PH5KDPbF Total Switching Losses (mj) R G = 5.Ω Ohm T J = 5 C V CC = 8V 96V V GE = 5V I C, Collector Current (A) V GE = 2V T = 25 o J C I C, Collector Current (A) SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector Current Fig. 2 - Turn-Off SOA Instantaneous Forward Current ( A ) T J = 5 C T = 25 C J Forward Voltage Drop - V FM (V ) Fig. 3 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6

7 3 4 IRG4PH5KDPbF V R = 2V T J = 25 C V R = 2V T J = 25 C 3 2 trr - (ns) I F = 32A I F = 6A I F = 8.A I RRM - (A) 2 I F = 32A I F = 6A I F = 8.A di f /dt - (A/µ s) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/µ s) Fig. 5 - Typical Recovery Current vs. di f /dt 2 V R = 2V T J = 25 C V R = 2V T J = 25 C 9 Q - (nc) RR 6 I F = 32A I F = 6A I F = 8.A di(rec)m /dt - (A/µs) I F =6A I F = 8.A I F = 32A 3 di f /dt - (A/µ s) Fig. 6 - Typical Stored Charge vs. di f /dt di f /dt - (A/µ s) Fig. 7 - Typical di (rec)m /dt vs. di f /dt 7

8 IRG4PH5KDPbF +Vge 9% Vge Same type device as D.U.T. Vce Ic % Vce Ic 9% Ic 8% of Vce 43µF D.U.T. td(off) tf 5% Ic t+5µ S Eoff = Vce ic dt t Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr icdt id = tx Vcc % Ic td(on) t Vce tr 9% Ic 5% Vce Ipk Ic Vce ie dt t2 Eon = t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr DIODE RECOVERY W AVEFORMS t4 Erec Vd Vcicdt id = t3 Vcc t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8

9 IRG4PH5KDPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 48V R L = 96V 4 X I C 5V 6µF V Figure 9. Clamped Inductive Load Test Circuit Figure 2. Pulsed Collector Current Test Circuit 9

10 IRG4PH5KDPbF Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=µH, R G = 5.Ω (figure 9) ƒpulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE3 WITH AS S EMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S E MB LY LOT CODE IRFPE3 35H PART NUMBER DATE CODE YEAR = 2 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information. 4/4

11 Note: For the most current drawings please refer to the IR website at:

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