IRGPC20MD2 Short Circuit Rated Fast CoPack IGBT
|
|
- Naomi Paulina Warner
- 6 years ago
- Views:
Transcription
1 INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT REOVERY DIODE Features Short circuit rated V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized for medium operating frequency ( to khz) See Fig. for urrent vs. Frequency curve G E n-channel Description o-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. bsolute Maximum Ratings Thermal Resistance PD IRGP2MD2 Short ircuit Rated Fast opack IGBT V ES = 6V V E(sat) GE = 5V, I = 8. TO-247 Parameter Max. Units V ES ollector-to-emitter Voltage 6 V T = 25 ontinuous ollector urrent 3 T = ontinuous ollector urrent 8. I M Pulsed ollector urrent 26 I LM lamped Inductive Load urrent 26 I T = Diode ontinuous Forward urrent 7. I FM Diode Maximum Forward urrent 6 t sc Short ircuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P T = 25 Maximum Power Dissipation 6 W P T = Maximum Power Dissipation 24 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Parameter Min. Typ. Max. Units R θj Junction-to-ase - IGBT 2. R θj Junction-to-ase - Diode 3.5 /W R θs ase-to-sink, flat, greased surface.24 R θj Junction-to-mbient, typical socket mount 4 Wt Weight 6 (.2) g (oz) -38 Revision 2
2 Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 6 V V GE = V, I = 25µ V (BR)ES/ T J Temp. oeff. of Breakdown Voltage.42 V/ V GE = V, I =.m V E(on) ollector-to-emitter Saturation Voltage I = 8. V GE = 5V 2.7 V I = 3 See Fig. 2, I = 8., T J = 5 V GE(th) Gate Threshold Voltage V E = V GE, I = 25µ V GE(th) / T J Temperature oeff. of Threshold Voltage - mv/ V E = V GE, I = 25µ g fe Forward Transconductance S V E = V, I = 8. I ES Zero Gate Voltage ollector urrent 25 µ V GE = V, V E = 6V 7 V GE = V, V E = 6V, T J = 5 V FM Diode Forward Voltage Drop.4.7 V I = 8. See Fig I = 8., T J = 5 I GES Gate-to-Emitter Leakage urrent ± n V GE = ±2V Switching (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) 6 24 I = 8. Qge Gate - Emitter harge (turn-on) n V = 4V Q gc Gate - ollector harge (turn-on) See Fig. 8 t d(on) Turn-On Delay Time 66 t r Rise Time 4 ns I = 8., V = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = 5Ω t f Fall Time Energy losses include "tail" and E on Turn-On Switching Loss.5 diode reverse recovery. E off Turn-Off Switching Loss. mj See Fig. 9,,, 8 E ts Total Switching Loss t sc Short ircuit Withstand Time µs V = 36V, V GE = 5V, R G = 5Ω, V PK < 5V t d(on) Turn-On Delay Time 65 T J = 5, See Fig. 9,,, 8 t r Rise Time 46 ns I = 8., V = 48V t d(off) Turn-Off Delay Time 52 V GE = 5V, R G = 5Ω t f Fall Time 56 Energy losses include "tail" and E ts Total Switching Loss 2.3 mj diode reverse recovery. L E Internal Emitter Inductance 3 nh Measured 5mm from package ies Input apacitance 365 V GE = V oes Output apacitance 47 pf V = 3V See Fig. 7 res Reverse Transfer apacitance 4.8 ƒ =.MHz t rr Diode Reverse Recovery Time ns See Fig I F = 8. I rr Diode Peak Reverse Recovery urrent See Fig V R = 2V Q rr Diode Reverse Recovery harge n See Fig di/dt = 2/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 24 /µs See Fig. During t b 2 7 Notes: Repetitive rating; V GE =2V, pulse width limited by max. junction temperature. ( See fig. 2 ) V =8%(V ES ), V GE =2V, L=µH, R G = 5Ω, ( See fig. 9 ) Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. -382
3 Load urrent () % o f ra te d v o lta g e D u ty cycle : 5 % T J = 2 5 T s in k = 9 G a te drive a s sp ec ifie d Turn -on losses include e ffec ts of re ve rse re co ve ry Po we r D is sipation = 5W 2. f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (Load urrent = I RMS of fundamental) I, ollector-to-emitter urrent () T J = 5 V GE = 5V 2µs PULSE WIDTH V E, ollector-to-emitter Voltage (V) I, ollector-to-emitter urrent () T J = 5 V = V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics -383
4 Maximum D ollector urrent () V GE = 5V V E, ollector-to-emitter Voltage (V) V GE = 5V 8µs PULSE WIDTH I = 6 I = 8. I = T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, ase Temperature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature Therm al Response (Z thj ). D = SIN G LE P U LS E (TH ER M L R E SP O N SE ) 2. P eak T J = P D M x Z th J + T t, R ectangular Pulse Duration (sec) N otes :. D uty fac tor D = t / t 2 P D M t t 2 Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-ase -384
5 , apacitance (pf) V GE = V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V GE, Gate-to-Emitter Voltage (V) V E = 4V I = 8. V E, ollector-to-emitter Voltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Q g, Total Gate harge (n) Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V = 48V V GE = 5V T = 25 I = 8. Total Switching Losses (mj) R G = 5Ω V GE = 5V V = 48V I = 6 I = 8. I = R G, Gate Resistance (Ω) W T, ase Temperature ( ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. ase Temperature -385
6 Total Switching Losses (mj) R G = 5Ω T = 5 V = 48V V GE = 5V I, ollector-to-emitter urrent () V GE = 2V SFE OPERTING RE I, ollector-to-emitter urrent () Fig. - Typical Switching Losses vs. ollector-to-emitter urrent V E, ollector-to-emitter Voltage (V) Fig. 2 - Turn-Off SO Instantaneous Forward urrent - I F () T J = Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward urrent -386
7 8 V R = 2V V R = 2V I F = 6 t rr - (ns) 6 4 I F = 8. I IRRM - () I F = 8. I F = 6 2 I F = 4. I = 4. F di f /dt - (/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (/µs) Fig. 5 - Typical Recovery urrent vs. di f /dt 5 4 V R = 2V V R = 2V Q RR - (n) 3 2 I F = 6 I F = 8. di(rec)m/dt - (/µs) I F = 4. I F = 8. I F = 6 I = 4. F di f /dt - (/µs) Fig. 6 - Typical Stored harge vs. di f /dt di f /dt - (/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt -387
8 9% Vge Same type device as D.U.T. +Vge Vce 8% of Vce 43µF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig. 8a - Test ircuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µs Eoff = Vce ic dt t t Fig. 8b - Test Waveforms for ircuit of Fig. 8a, Defining E off, t d(off), t f t2 % +Vg GTE VOLTGE D.U.T. +Vg Ic trr trr Qrr id dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = ie dt Vce t t2 DUT VOLTGE ND URRENT Vpk tx % Vcc Irr DIODE REVERSE REOVERY ENERGY % Irr DIODE REOVERY WVEFORMS t4 Erec Vd id dt = t3 Vcc Fig. 8c - Test Waveforms for ircuit of Fig. 8a, Defining E on, t d(on), t r Refer to Section D for the following: t3 Fig. 8d - Test Waveforms for ircuit of Fig. 8a, Defining E rec, t rr, Q rr, I rr t4 ppendix D: Section D - page D-6 Fig. 8e - Macro Waveforms for Test ircuit of Fig. 8a Fig. 9 - lamped Inductive Load Test ircuit Fig. 2 - Pulsed ollector urrent Test ircuit Package Outline 3 - JEDE Outline TO-247 Section D - page D-3-388
9 Note: For the most current drawings please refer to the IR website at:
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT REOVERY DIODE PD - 94938 IRG4B3FDPbF Fast opack IGBT Features Fast: Optimized for medium operating frequencies (-5 khz in hard switching, >2kHz in resonant
More informationIRGPH50FD2 Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized for medium operating frequency (
More informationIRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
More informationW T J Operating Junction and -55 to +150 T STG Storage Temperature Range C
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT REOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides
More informationIRGBC30M Short Circuit Rated Fast IGBT
INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, V GE = 5V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency ( to khz) See Fig. for urrent vs.
More informationE n-channel. Parameter Min. Typ. Max. Units
INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency
More informationFeatures. n-channel TO-247AC. 1
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides
More informationFeatures. n-channel TO-247AC. 1
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides
More informationIRG4PC50FD. Fast CoPack IGBT. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features. n-channel V CES = 600V
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features C Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design
More informationINSULATED GATE BIPOLAR TRANSISTOR. E n-channel
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.780 UltraFast IGBT Features Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD -9586 INSULTED GTE BIPOLR TRNSISTOR IRG4P50UPbF UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT
More informationFeatures. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @36V V CE (start), T J = 25 C, V GE = 5V Combines low conduction
More informationn-channel TO-220AB 1
PD -949A IRG4BC3KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, t sc =µs,
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD 9470F IRG4P50U INSULTED GTE BIPOLR TRNSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT
More informationIRGPC40S PD TO-247AC. Features V CES = 600V. V CE(sat) 1.8V. Description. Absolute Maximum Ratings. Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.692 IRGP4S Standard Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for line frequency operation (to 4Hz) See Fig. for urrent vs.
More informationFeatures. n-channel TO-220AB. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5 khz, and Short Circuit Rated to µs @ 25 C, V GE
More informationFeatures. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design
More informationTO-247AC Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, V CC = 72V,, V GE = 5V Combines low conduction losses with
More informationn-channel D 2 Pak 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @360V V CE (start),, V GE = 5V Combines low conduction losses
More informationn-channel Features 1 TO-247AD Pulse Collector CurrentÃc 82 I LM
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFRED TM ultrafast
More informationGA200TD120U PD D. Ultra-Fast TM Speed IGBT "HALF-BRIDGE" IGBT DUAL INT-A-PAK. Features V CES = 1200V. V CE(on) typ. = 2.3V.
"HALF-BRIDGE" IGBT DUAL INT-A-PAK Features Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-4 khz in hard switching, >2 khz in resonant mode Very low conduction and switching
More informationIGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD 946E RG4P30U NSULTED GTE BPOLR TRNSSTOR UltraFast Speed GBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design
More informationIRG4BC30FD-SPbF. Fast CoPack IGBT. n-channel. Absolute Maximum Ratings Parameter Max. Units INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features Fast: optimized for medium operating frequencies (1-5 khz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides
More informationPD IRG4PC30UPbF. UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC. 1
PD - 94923 NSULTED GTE BPOLR TRNSSTOR RG4P30UPbF UltraFast Speed GBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT
More informationTO-247AC Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V
More informationIRG4PC50KD PD B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Short Circuit Rated UltraFast IGBT.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @25 C, V GE
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD- 9788 IRG4PF5WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Optimized for use in Welding and Switch-Mode Power Supply applications V CES = 9V Industry benchmark switching
More informationIRG4BC10SD-SPbF IRG4BC10SD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives,
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD -957 INSULTED GTE BIPOLR TRNSISTOR IRG4PC4SPbF Standard Speed IGBT Features C Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides
More informationPRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units
PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High abort circuit
More informationIRG4BC20KD. Short Circuit Rated UltraFast IGBT V CES = 600V. V CE(on) typ. = 2.27V. Thermal Resistance. GE = 15V, I C = 9.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @ 25 C, V GE
More informationIRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. UltraFast Co-Pack IGBT V CES = 600V. Features. V CE(on) typ. = 2.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating up to 80 khz in hard switching, > 200 khz in resonant mode Generation 4 IGBT design
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design
More informationIRG4BC20KD-S. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V
More informationIRG4BC20SD. Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop.4vtyp. @ A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives,
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9452E RG4B30U NSULTED GTE BPOLR TRNSSTOR UltraFast Speed GBT Features UltraFast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design
More information"Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
INT-A-PAK "Half-Bridge" IGBT INT-A-PAK FEATURES Vishay High Power Products Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 khz to 4 khz in hard switching, > 2 khz in resonant mode Very
More informationPD IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, Generation 4 IGBT design provides higher
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP TRENH IGBT PD - 97132 IRGP486PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery ircuits in PDP Applications l Low V E(on) and Energy per Pulse (E PULSE TM )
More informationPD A IRG4PC60F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC. 1
PD - 94442A INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >20 khz in resonant mode). Generation 4 IGBT design
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 94443 INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast: Optimized for high operating frequencies up to 50 khz in hard switching, >200 khz in resonant mode. Generation 4
More informationHiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE
PD-97014C HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE G300HHCK12P2 Product Summary Part Number V CE I C V CE(SAT) G300HHCK12P2 1200V 300A 2.2 HiRel TM INT-A-Pak 2 The HiRel TM INT-A-Pak series
More informationPD IRG4PC30WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power
More informationPD IRG4PC50WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC. 1
INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power
More informationFeatures. n-channel TO-220AB. 1
PD-95640 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
More informationT J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.
PD - 94069 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30S-S Standard Speed IGBT Features Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications 2.5kV, 60s insulation voltage Industry-benchmark switching losses
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD - 94076 INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency
More informationN Channel Enhancement Mode Silicon Gate
SEMIONDUTOR TEHNIAL DATA Order this document by MGPN6ED/D N hannel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) is co packaged with a soft recovery ultra fast rectifier and
More information33 A I CM. 114 Gate-to-Emitter Voltage. mj P T C =25 Maximum Power Dissipation. Operating Junction and -55 to T STG
INSULATED GATE BIPOLAR TRANSISTOR Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides tighter parameter distribution and
More informationIRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3.
PD -9580A IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs, V CC = 720V, T J = 25 C, Combines low conduction losses with high switching
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9.629 PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses
More informationFeatures TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
More informationAbsolute Maximum Ratings Parameter Max. Units
PD-95882 PDP Switch IRGP45 Features Key parameters optimized for PDP sustain & Energy recovery applications 4A continuous collector current rating reduces component count High pulse current rating makes
More informationSUSPM TM SEPT LUH75G1201_Preliminary LUH75G1201Z*_Preliminary. SUSPM1 94 X 34 X 30mm. 1200V 75A 2-Pack IGBT Module. Features.
SEPT. 9 LUH75G121_Preliminary LUH75G121Z*_Preliminary SUSPM TM 1V 75A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast
More informationIRG4BH20K-S PD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features V CES = 1200V. V CE(on) typ. = 3.17V.
INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs @ V CC = 720V, T J = 25 C, Combines low conduction losses with high switching speed Latest generation
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V. Symbol V GE I C I CM I LM I F I FM. t SC P D T L. R θ JA R θ JC
AOTB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More informationIRG4PC40K Short Circuit Rated UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR PD - 9.585B IRG4PC40K Short Circuit Rated UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) Symbol V GE I C I CM I LM 6.6 I F 2.6 I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOD5B5N 5V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 5V breakdown voltage Very low turn-off switching loss with softness
More informationIRGB6B60KD IRGS6B60KD IRGSL6B60KD
PD - 93E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft
More informationV CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875
APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = 875A @ Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4
More informationIRGMC50F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 600V. V CE(on) max = 1.7V
PD -90718B INSULATED GATE BIPOLAR TRANSISTOR IRGMC50F Fast Speed IGBT Features Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 khz - 8 khz Switching-loss
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.6V TO-220F C. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTFB6M2 6V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 6V breakdown voltage Very fast and soft recovery freewheeling diode
More informationAOT15B65M1/AOB15B65M1
AOT5B65M/AOB5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AOTFBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
More informationMaximum Power Dissipation W C
PD- 57A INSULATED GATE BIPOLAR TRANSISTOR GA2SA6S Standard Speed IGBT Features C Standard : Optimized for minimum saturation voltage and low operating frequencies up to khz Lowest conduction losses available
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
PD -91656C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
More informationItem Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LVHG121_Preliminary LVHG121Z*_Preliminary Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching - High ruggedness Free wheeling diodes
More informationAOK20B65M1/AOT20B65M1/AOB20B65M1
OKB65M/OTB65M/OBB65M 65V, lpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest lpha IGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.94V. Symbol V GE I C I CM I LM I F 30 I FM. t SC P D T L. R θ JA R θ JC
AOKB5M 5V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage Very fast and soft recovery freewheeling diode High
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM. I F to 150 I FM P D T J, T STG T L
AOKBHAL V, A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (αigbt) Technology V Breakdown voltage Very fast and soft recovery freewheeling diode High
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.95V. Symbol V GE I C I CM I LM I F I FM P D T L. R θ JA R θ JC
AOKBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology V breakdown voltage Fast and soft recovery freewheeling diode High efficient
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.7V TO-220F C G E. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L.
AOTF5B65M 65V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology 65V breakdown voltage Very fast and soft recovery freewheeling diode
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.6V. Symbol. Symbol V GE I C I CM I LM 30 I F 15 I FM. t SC P D T J, T STG T L.
AOK5B6D 6V, 5A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability.
More informationSTGW40S120DF3, STGWA40S120DF3
STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop Features Datasheet - production data Figure 1. Internal schematic diagram 10 µs of short-circuit withstand time
More informationXI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
More informationFull Bridge IGBT MTP (Warp Speed IGBT), 50 A
Full Bridge IGBT MTP (Warp Speed IGBT), 50 A MTP PRIMARY CHARACTERISTICS V CES 600 V DC 69 A V CE(on) 2.22 V Speed 8 khz to 30 khz Package MTP Circuit configuration Full bridge FEATURES Gen 4 warp speed
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V TO-263 D 2 PAK C E E G E AOB5B65M1. Symbol V GE I C I CM I LM I F I FM. t SC P D T L.
AOTBM/AOBBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode
More informationV CE I C (T C =100 C) V CE(sat) (T J =25 C) 1.57V. Symbol V GE I C I CM I LM I F I FM. t SC P D T J, T STG T L. R θ JA R θ JC
AODBM V, A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest AlphaIGBT (α IGBT) technology V breakdown voltage Very fast and soft recovery freewheeling diode High
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol V GE. ±20 V 500ns 24 V V SPIKE I C I CM I LM I F 10 I FM. t SC P D T J, T STG T L
AOKB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
More informationUltrafast, Soft Recovery Diode BASE CATHODE 3 CATHODE
Bulletin PD -.34 rev. / HEXFRED TM HF5PB6 Ultrafast, Soft Recovery Diode Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Specified at Operating Conditions Benefits Reduced RFI
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD - 9790 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W-S Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.53V. Symbol V GE I C I CM I LM 20 I F 10 I FM. t SC P D T J, T STG T L. R θ JA
AOBB6D 6V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
More informationHigh Power Rugged Type IGBT Module
ug. 29 High Power Rugged Type IGBT Module Description DWIN S IGBT 7DM3 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 2.0V. Symbol
AOKS3BD V, 3A Alpha IGBT TM General Description Latest Alpha IGBT (α IGBT) technology High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching loss and softness Very
More informationFGL60N100BNTD 1000 V, 60 A NPT Trench IGBT
FGLNBNTD V, A NPT Trench IGBT Features High Speed Switching Low Saturation Voltage: V CE(sat) =.5 V @ = A High Input Impedance Built-in Fast Recovery Diode Applications UPS, Welder General Description
More informationHFA30TA60C HEXFRED TM. Ultrafast, Soft Recovery Diode TO-220AB. Bulletin PD rev. A 11/00. Features. Description
Bulletin PD -.335 rev. / HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Guaranteed valanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced
More informationInsulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), A VS-GASA6UP SOT-7 PRIMARY CHARACTERISTICS V CES 6 V V CE(on) (typical).9 V V GE 5 V I C A Speed 8 khz to 3 khz Package SOT-7 Circuit configuration
More informationItem Symbol Condition Value Units V C = 25 C 1200 V V C = 25 C ±20
LUHG121_Preliminary LUHG121Z*_Preliminary SEPT. 29 SUSPM TM 12V A 2-Pack IGBT Module Features Soft punch through IGBT(SPT + IGBT) - Low saturation voltage - Positive temperature coefficient - Fast switching
More informationV CE I C (T C =100 C) V CE(sat) (T C =25 C) 1.85V. Symbol. V ±20 V 500ns 24 V V GE V SPIKE I C I CM I LM I F 30 I FM. t SC P D T J, T STG T L
AOKBD V, A Alpha IGBT TM with Diode General Description The Alpha IGBT TM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They
More informationSymbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd
2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter
More informationAPT50GS60BRDQ2(G) APT50GS60SRDQ2(G)
APTGSBRDQ(G) APTGSSRDQ(G) V, A, (ON) =.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar
More informationAOKS40B65H1/AOTS40B65H1
AOKS4B5H/AOTS4B5H 5V, 4AAlpha IGBT TM General Description Latest AlphaIGBT (α IGBT) technology 5V breakdown voltage High efficient turn-on di/dt controllability Very high switching speed Low turn-off switching
More informationSKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant
SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast
More informationIRG7PH28UD1PbF IRG7PH28UD1MPbF
IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) trench IGBT technology Low switching
More informationV DSS R DS(on) max (mω)
Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
More informationIRG7R313UPbF. Key Parameters V CE min 330 V V CE(ON) I C = 20A 1.35 V I RP T C = 25 C 160 A T J max 150 C
PDP TRENCH IGBT PD - 97484 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved
More informationIGBT ECONO3 Module, 150 A
IGBT ECONO3 Module, 5 A VS-GB5YG2NT ECONO3 4 pack FEATURES Gen 5 non punch through (NPT) technology μs short circuit capability Square RBSOA HEXFRED low Q rr, low switching energy Positive temperature
More informationTrench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package
Datasheet Trench gate fieldstop, 2 V, 25 A, lowloss M series IGBT in a TO247 package Features TO247 3 2 Maximum junction temperature: T J = 75 C μs of shortcircuit withstand time Low V CE(sat) =.85 V (typ.)
More information