PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

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1 PD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Benefits Lower switching losses allow more cost-effective operation than power MOSFETs up to 50 khz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 50W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 khz) Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 V I T C = 25 C Continuous Collector Current 23 I T C = 0 C Continuous Collector Current 2 A I CM Pulsed Collector Current 92 I LM Clamped Inductive Load Current 92 V GE Gate-to-Emitter Voltage ± 20 V E ARV Reverse Voltage Avalanche Energy ƒ 80 mj P T C = 25 C Maximum Power Dissipation 0 P T C = 0 C Maximum Power Dissipation 42 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance G C E n-channel TO-220AB V CES = 600V V CE(on) max. = I C = 2A Parameter Typ. Max. Units R θjc Junction-to-Case.2 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient, typical socket mount 80 Wt Weight.44 g 7/28/97

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 8 V V GE = 0V, I C =.0A V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 0.34 V/ C V GE = 0V, I C =.0mA I C = 2A V CE(ON) Collector-to-Emitter Saturation Voltage 2.45 I C = 23A See Fig.2, 5 V.95 I C = 2A, T J = 50 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance 6 S V CE = 0 V, I C = 2A I 250 V GE = 0V, V CE = 600V CES Zero Gate Voltage Collector Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 00 V GE = 0V, V CE = 600V, T J = 50 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 5 76 I C = 2A Q ge Gate - Emitter Charge (turn-on) 7.6 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) 8 27 t d(on) Turn-On Delay Time 25 t r Rise Time 6 T J = 25 C ns t d(off) Turn-Off Delay Time I C = 2A, V CC = 480V t f Fall Time 67 0, R G = 23Ω E on Turn-On Switching Loss 3 Energy losses include "tail" E off Turn-Off Switching Loss 3 mj See Fig. 9,, 3, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time 24 T J = 50 C, t r Rise Time 7 I C = 2A, V CC = 480V ns t d(off) Turn-Off Delay Time 50, R G = 23Ω t f Fall Time 50 Energy losses include "tail" E ts Total Switching Loss 0.55 mj See Fig.,3, 4 L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 980 V GE = 0V C oes Output Capacitance 7 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 8 ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = 23Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor %. Pulse width 5.0µs, single shot.

3 Load Current ( A ) Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 C T sink = 90 C Gate drive as specified Power Dissipation = 2W Triangular wave: Clamp voltage: 80% of rated Ideal diodes 0 A 0 f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) 0 0 I C, Collector-to-Emitter Current (A) T J = 50 C T J = 25 C 20µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 50 C T J = 25 C V CC = 50V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

4 Maxim um D C Collector Current (A V CE, Collector-to-Emitter Voltage(V) us PULSE WIDTH 24A 2A 6A 0 A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) D = t SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t Peak T J = PDM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

5 C, Capacitance (pf) VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 400V I C = 2A 0 0 V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 480V T J = 25 C I C = 2A Total Switching Losses (mj) R G = Ohm 23Ω V CC = 480V I C = 24A 2A 6A R GR, G Gate, Gate Resistance (Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance T J, Junction Temperature ( C ) Fig. - Typical Switching Losses vs. Junction Temperature

6 Total Switching Losses (mj) R G = Ohm 23Ω T J = 50 C V CC = 480V I, C ollector-to-em itter Current (A) C 00 0 V GE = 20V T = 25 C J SAFE OPERATING AREA I C, Collector-to-emitter Current (A) 0 00 V CE, C olle cto r-to-e m itte r V o lta g e (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA

7 50V 00V L V * C D.U.T V 480µF 960V R L = 480V 4 X I C * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 50V 00V L Driver* D.U.T. V C ƒ Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V 90% ƒ % V C 90% t d(off) Fig. 4b - Switching Loss Waveforms I C 5% % td(on) tr E on t f E off t=5µs E ts = (E on +E off )

8 Case Outline and Dimensions TO-220AB 2.87 (.3) 2.62 (.3) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530).54 (.45).29 (.405) (.255) 6. (.240) 3.78 (.49) 3.54 (.39) - A -.5 (.045) MIN 3 X 4.06 (.60) 3.55 (.40) 3.96 (.60) 3.55 (.40) 4.69 (.85) 4.20 (.65) - B -.32 (.052).22 (.048) NOTES: DIMENSIONS & TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOWN MILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-220AB. LEAD ASSIGNMENTS - GATE 2 - COLLECTOR 3 - E M ITT E R 4 - COLLECTOR.40 (.055) 3 X.5 (.045) 2.54 (.0) 2X 0.93 (.037) 3 X 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3 X 0.46 (.08) 2.92 (.5) 2.64 (.4) CONFORMS TO JEDEC OUTLINE TO-220AB D imensions in Millimeters and (Inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: 732 Victoria Park Ave., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITALY: Via Liguria 49, 07 Borgaro, Torino Tel: IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEAST ASIA: 35 Outram Road, #-02 Tan Boon Liat Building, Singapore 036 Tel: Data and specifications subject to change without notice.7/97