IRG4PC50FD. Fast CoPack IGBT. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features. n-channel V CES = 600V

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1 INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features C Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation 3 E IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations Industry standard TO-247C package Benefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's bsolute Maximum Ratings Thermal Resistance IRG4PC5FD Fast CoPack IGBT TO-247C PD 9469B V CES = 6V V CE(on) typ. GE = 5V, I C = 39 Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 7 I T C = C Continuous Collector Current 39 I CM Pulsed Collector Current 28 I LM Clamped Inductive Load Current 28 I T C = C Diode Continuous Forward Current 25 I FM Diode Maximum Forward Current 28 V GE Gate-to-Emitter Voltage ± 2 V P T C = 25 C Maximum Power Dissipation 2 P T C = C Maximum Power Dissipation 78 W T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT R θjc Junction-to-Case - Diode C/W R θcs Case-to-Sink, flat, greased surface R θj Junction-to-mbient, typical socket mount Wt Weight (.2) g (oz) 2/3/

2 Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ V V GE = V, I C = 25µ V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage V/ C V GE = V, I C =.m V CE(on) Collector-to-Emitter Saturation Voltage I C = 39 V GE = 5V V I C = 7 See Fig. 2, I C = 39, T J = 5 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 25µ V GE(th) / T J Temperature Coeff. of Threshold Voltage mv/ C V CE = V GE, I C = 25µ g fe Forward Transconductance S V CE = V, I C = 39 I CES Zero Gate Voltage Collector Current µ V GE = V, V CE = 6V V GE = V, V CE = 6V, T J = 5 C V FM Diode Forward Voltage Drop V I C = 25 See Fig I C = 25, T J = 5 C I GES Gate-to-Emitter Leakage Current ± n V GE = ±2V Switching (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 39 Qge Gate - Emitter Charge (turn-on) nc V CC = 4V See Fig. 8 Q gc Gate - Collector Charge (turn-on) V GE = 5V t d(on) Turn-On Delay Time t r Rise Time ns I C = 39, V CC = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = 5.Ω t f Fall Time Energy losses include "tail" and E on Turn-On Switching Loss diode reverse recovery. E off Turn-Off Switching Loss mj See Fig. 9,,, 8 E ts Total Switching Loss t d(on) Turn-On Delay Time T J = 5 C, See Fig. 9,,, 8 t r Rise Time ns I C = 39, V CC = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = 5.Ω t f Fall Time Energy losses include "tail" and E ts Total Switching Loss mj diode reverse recovery. L E Internal Emitter Inductance nh Measured 5mm from package C ies Input Capacitance V GE = V C oes Output Capacitance pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance ƒ =.MHz t rr Diode Reverse Recovery Time ns See Fig I F = 25 I rr Diode Peak Reverse Recovery Current See Fig V R = 2V Q rr Diode Reverse Recovery Charge nc See Fig di/dt 2/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery /µs See Fig. During t b

3 5 Load Current ( ) 4 3 6% of rated voltage Duty cycle: 5% T sink = 9 C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 4W 2. f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current () T J = 5 C V GE = 5V 2µ s PULSE W IDTH. V CE, Collector-to-Emitter Voltag e (V ) I C, Collector-to-Emitter Current () T J = 5 C V CC = 5V 5µs PULSE W IDTH V GE, Gate-to-Emitter Voltage (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current () V GE = 5V V CE, Collector-to-Em itter Voltage (V) V GE = 5V 8µs PULSE WIDTH I C = 78 I C = 39 I C = T, Case Temperature ( C) C T, Junction Temperature ( C ) J Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ). D = SING LE PULSE (THERML RESPONSE) 2. Peak T J = P DM x Z th JC + T C t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 PDM t t 2 Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4

5 C, Capacitance (pf) C ies C oes C res V GE = V f = MHz Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc SHORTED V GE, Gate-to-Em itter Voltage (V) V CE I C = 4V = 39 V CE, Collector-to-Emitter Voltage (V) Q g, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switchig Losses (mj) V CC = 48V V GE = 5V I C = 39 Total Switchig Losses (mj) R G = 5. Ω V GE = 5V V CC = 48V I C = 78 I C = 39 I C = R G, Gate Resistance ( Ω) T, Junction Temperature ( C) J Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5

6 Total Switchig Losses (mj) R G = 5. Ω T J = 5 C V CC = 48V V GE = 5V I, Collector-to-Emitter Current () C V GE = 2V T = 25 C J SFE OPERTING RE I C, Collector-to-Emitter Current ( ) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current V CE, Collector-to-Emitter Voltage (V) Fig. 2 - Turn-Off SO Instantaneous Forward Current - I F () T J = 5 C Forward Voltage Drop - V FM (V ) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6

7 4 2 V R = 2V T J = 25 C T J = 25 C V R = 2V t rr - (ns) 8 6 I F = 5 I F = 25 I F = I IRRM - () I F = 5 I F = 25 I F = 4 2 di f /dt - (/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (/µs) Fig. 5 - Typical Recovery Current vs. di f /dt 5 2 V R = 2V V R = 2V Q - (nc) RR 9 6 I F = 5 I F = 25 di(rec)m/dt - (/µs) I = F 3 I F = 25 I F = di f /dt - (/µs) Fig. 6 - Typical Stored Charge vs. di f /dt I F = 5 di f /dt - (/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt 7

8 +Vge 9% Vge Same type device as D.U.T. Vce Ic % Vce Ic 9% Ic 8% of Vce 43µF D.U.T. td(off) tf 5% Ic Eoff = t+5µ S Vce ic dt t Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GTE VOLTGE D.U.T. +Vg Ic trr trr Qrr id dt = tx Vcc % Ic td(on) t Vce tr 9% Ic 5% Vce Ipk Ic Vce ie dt t2 Eon = t t2 DUT VOLTGE ND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr DIODE RECOVERY W VEFORMS t4 Erec Vd id dt = t3 Vcc t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8

9 Vg GTE SIGNL DEVICE UNDER TEST CURRENT D.U.T. VOLTGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 48V R L = 48V 4 X I C 5V 6µF V Figure 9. Clamped Inductive Load Test Circuit Figure 2. Pulsed Collector Current Test Circuit 9

10 Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=µH, R G = 5.Ω (figure 9) ƒpulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. Case Outline TO-247C * 2.3 (.8) 9.7 (.775) 4.8 (.583) 4.2 (.559) 2.4 (.94) 2. (.79) 2X 5.45 (.25) 2X 5.9 (.626) 5.3 (.62) - B (.33) 3. (.8) - - 2X 3.65 (.43) 3.55 (.4).25 (.) M 5.5 (.27) - C (.7) 3.7 (.45) 5.5 (.27) 4.5 (.77).4 (.56) 3X. (.39).25 (.) M C S D B M - D (.29) 4.7 (.85) 2.5 (.89).5 (.59) 4.8 (.3) 3X.4 (.6) 2.6 (.2) 2.2 (.87) NOTES: DIMENSIONS & TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION : INCH. 3 DIM ENSIONS RE SHO W N M ILLIM ETER S (INC HES). 4 CO NFO RM S TO JEDEC OU TLIN E TO-247C. LED SSIGNMENTS - G T E 2 - COLLECTOR 3 - EM ITTER 4 - COLLECTOR * LONGER LEDED (2mm) VERSION VILBLE (TO-247D) TO ORDER DD "-E" SUFFIX TO PRT NUMBER CONFORMS TO JEDEC OUTLINE TO-247C (TO-3P) Dimensions in Millimeters and (Inches) IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information. Data and specifications subject to change without notice. 2/

11 Note: For the most current drawings please refer to the IR website at: