n-channel Base part number Package Type Standard Pack Complete Part Number

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1 AUTOMOTIVE GRADE AUIRGP5B6PD AUIRGP5B6PD-E WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications Automotive HEV and EV PFC and ZVS SMPS Circuits Features Low V CE(ON) NPT Technology, Positive Temperature Coefficient Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Lead-Free, RoHS Compliant Automotive Qualified * Benefits Parallel Operation for Higher Current Applications Lower Conduction Losses and Switching Losses Higher Switching Frequency up to 5kHz Ordering Information G C E n-channel TO-247AC AUIRGP5B6PD V CES = 6V V CE(on) typ. = V GE = 5V I C = 33A Equivalent MOSFET Parameters R CE(on) typ. = 6mΩ I D (FET equivalent) = 5A G C E Gate Collector Emitter Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRGP5B6PD TO-247AC Tube 25 AUIRGP5B6PD AUIRGP5B6PDE TO-247AD Tube 25 AUIRGP5B6PDE Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A ) is 25 C, unless otherwise specified. G C E G C E TO-247AD AUIRGP5B6PD-E Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 75 h I T C = C Continuous Collector Current 45 I CM Pulse Collector Current (Ref. Fig. C.T.4) 5 I LM Clamped Inductive Load Current d 5 A I T C = 25 C Diode Continous Forward Current 4 I T C = C Diode Continous Forward Current 5 I FRM Maximum Repetitive Forward Current e 6 V GE Gate-to-Emitter Voltage ±2 V P T C = 25 C Maximum Power Dissipation 39 W P T C = C Maximum Power Dissipation 56 T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Soldering Temperature for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc (IGBT) Thermal Resistance Junction-to-Case-(each IGBT).32 C/W R θjc (Diode) Thermal Resistance Junction-to-Case-(each Diode).7 R θcs Thermal Resistance, Case-to-Sink (flat, greased surface).24 R θja Thermal Resistance, Junction-to-Ambient (typical socket mount) 4 Weight 6. (.2) g (oz) *Qualification standards can be found at International Rectifier May 2, 23

2 Notes: AUIRGP5B6PD/AUIRGP5B6PD-E Dynamic Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V (BR)CES Collector-to-Emitter Breakdown Voltage 6 V V GE = V, I C = 5μA ΔV (BR)CES /ΔT J Temperature Coeff. of Breakdown Voltage.3 V/ C V GE = V, I C = ma (25 C-25 C) R G Internal Gate Resistance.7 Ω MHz, Open Collector I C = 33A, V GE = 5V 4, 5,6,8,9 V CE(on) Collector-to-Emitter Saturation Voltage V I C = 5A, V GE = 5V I C = 33A, V GE = 5V, I C = 5A, V GE = 5V, V GE(th) Gate Threshold Voltage V I C = 25μA 7,8,9 ΔV GE(th) /ΔTJ Threshold Voltage temp. coefficient - mv/ C V CE = V GE, I C =.ma gfe Forward Transconductance 4 S V CE = 5V, I C = 33A, PW = 8μs I CES Collector-to-Emitter Leakage Current 5. 5 μa V GE = V, V CE = 6V. ma V GE = V, V CE = 6V, V FM Diode Forward Voltage Drop.3.7 V I F = 5A, V GE = V.2.6 I F = 5A, V GE = V, I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V, V CE = V Static or Switching (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig Q g Total Gate Charge (turn-on) I C = 33A 7 Q gc Gate-to-Collector Charge (turn-on) 7 5 nc V CC = 4V CT Q ge Gate-to-Emitter Charge (turn-on) 3 45 V GE = 5V E on Turn-On Switching Loss I C = 33A, V CC = 39V CT3 E off Turn-Off Switching Loss μj V GE = +5V, R G = 3.3Ω, L = 2μH E total Total Switching Loss TJ = 25 C f t d(on) Turn-On delay time 3 4 I C = 33A, V CC = 39V CT3 t r Rise time 5 ns V GE = +5V, R G = 3.3Ω, L = 2μH t d(off) Turn-Off delay time 3 5 f t f Fall time 5 E on Turn-On Switching Loss 58 7 I C = 33A, V CC = 39V CT3 E off Turn-Off Switching Loss μj V GE = +5V, R G = 3.3Ω, L = 2μH,3 E total Total Switching Loss 6 25 f WF,WF2 t d(on) Turn-On delay time I C = 33A, V CC = 39V CT3 t r Rise time 3 2 ns V GE = +5V, R G = 3.3Ω, L = 2μH 2,4 t d(off) Turn-Off delay time f WF,WF2 t f Fall time 5 2 C ies Input Capacitance 3648 V GE = V 6 C oes Output Capacitance 322 V CC = 3V C res Reverse Transfer Capacitance 56 pf f = Mhz C oes eff. Effective Output Capacitance (Time Related) g 25 V GE = V, V CE = V to 48V 5 C oes eff. (ER) Effective Output Capacitance (Energy Related) g 63 T J = 5 C, I C = 5A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE V CC = 48V, Vp =6V CT2 Rg = 22Ω, V GE = +5V to V t rr Diode Reverse Recovery Time 42 6 ns I F = 5A, V R = 2V, di/dt = 2A/μs Q rr Diode Reverse Recovery Charge 8 8 nc I F = 5A, V R = 2V, di/dt = 2A/μs I rr Peak Reverse Recovery Current A I F = 5A, V R = 2V, 9,2,2, di/dt = 2A/μs CT5 R CE(on) typ. = equivalent on-resistance = V CE(on) typ./ I C, where V CE(on) typ.= 2.V and I C =33A. I D (FET Equivalent) is the equivalent MOSFET I D 25 C for applications up to 5kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. V CC = 8% (V CES ), V GE = 5V, L = 28 μh, R G = 22 Ω. ƒ Pulse width limited by max. junction temperature. Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 3ETH6. C oes eff. is a fixed capacitance that gives the same charging time as C oes while V CE is rising from to 8% V CES. C oes eff.(er) is a fixed capacitance that stores the same energy as C oes while V CE is rising from to 8% V CES. Calculated continuous current based on maximum allowable junction temperature. Package current limit is 6A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements International Rectifier May 2, 23

3 I CE (A) I CE (A) I C A) I CE (A) I C (A) P tot (W) AUIRGP5B6PD/AUIRGP5B6PD-E T C ( C) T C ( C) Fig. - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature V GE = 5V VGE = 2V VGE = V VGE = 8.V VGE = 6.V Fig. 3 - Reverse Bias SOA T J = 5 C; V GE =5V Fig. 4 - Typ. IGBT Output Characteristics T J = -4 C; tp = 8μs V GE = 5V VGE = 2V VGE = V VGE = 8.V VGE = 6.V V GE = 5V VGE = 2V VGE = V VGE = 8.V VGE = 6.V Fig. 5 - Typ. IGBT Output Characteristics ; tp = 8μs Fig. 6 - Typ. IGBT Output Characteristics ; tp = 8μs International Rectifier May 2, 23

4 Swiching Time (ns) I CE (A) AUIRGP5B6PD/AUIRGP5B6PD-E I CE = 5A I CE = 33A I CE = 5A V GE (V) V GE (V) Fig. 7 - Typ. Transfer Characteristics V CE = 5V; tp = μs Fig. 8 - Typical V CE vs. V GE I CE = 5A I CE = 33A I CE = 5A Instantaneous Forward Current - I (A) F T J = 5 C V GE (V) Fig. 9 - Typical V CE vs. V GE Forward Voltage Drop - V FM (V) Fig. - Typ. Diode Forward Characteristics tp = 8μs 2 Energy (μj) 8 E ON td OFF 6 E OFF 4 t F 2 td ON t R I C (A) I C (A) Fig. - Typ. Energy Loss vs. I C ; L = 2μH; V CE = 39V, R G = 3.3Ω; V GE = 5V. Diode clamp used: 3ETH6 (See C.T.3) Fig. 2 - Typ. Switching Time vs. I C ; L = 2μH; V CE = 39V, R G = 3.3Ω; V GE = 5V. Diode clamp used: 3ETH6 (See C.T.3) International Rectifier May 2, 23

5 V GE (V) Normalized V CE(on) (V) E oes (μj) Capacitance (pf) Energy (μj) Swiching Time (ns) AUIRGP5B6PD/AUIRGP5B6PD-E 9 8 E ON td OFF 7 6 E OFF 5 td ON 4 t F t R R G (Ω) R G (Ω) Fig. 3 - Typ. Energy Loss vs. R G ; L = 2μH; V CE = 39V, I CE = 33A; V GE = 5V Diode clamp used: 3ETH6 (See C.T.3) 4 Fig. 4 - Typ. Switching Time vs. R G ; L = 2μH; V CE = 39V, I CE = 33A; V GE = 5V Diode clamp used: 3ETH6 (See C.T.3) Cies 3 2 Coes Cres Fig. 5- Typ. Output Capacitance Stored Energy vs. V CE Fig. 6- Typ. Capacitance vs. V CE V GE = V; f = MHz V Q G, Total Gate Charge (nc) T J ( C) Fig. 7 - Typical Gate Charge vs. V GE I CE = 33A Fig. 8 - Normalized Typ. V CE(on) vs. Junction Temperature I C = 33A, V GE = 5V International Rectifier May 2, 23

6 AUIRGP5B6PD/AUIRGP5B6PD-E V R = 2V V R = 2V 8 I = 3A F t rr - (ns) 6 I F = 3A I F = 5A I IRRM - (A) I F = 5A 4 I = 5.A F I F = 5.A 2 di f /dt - (A/μs) Fig. 9 - Typical Reverse Recovery vs. di f /dt di f /dt - (A/μs) Fig. 2 - Typical Recovery Current vs. di f /dt 8 V R = 2V V R = 2V 6 Q RR - (nc) 4 I F = 5A I F = 5.A I F = 3A di(rec)m/dt - (A/μs) I F = 5.A I F = 5A I = 3A F 2 di f /dt - (A/μs) Fig. 2 - Typical Stored Charge vs. di f /dt di f /dt - (A/μs) Fig Typical di (rec)m /dt vs. di f /dt, International Rectifier May 2, 23

7 Thermal Response ( Z thjc ) AUIRGP5B6PD/AUIRGP5B6PD-E Thermal Response ( Z thjc ).. D = R R 2 R R 2 τ J τ J τ τ τ 2 τ 2 τ C τ Ri ( C/W) τi (sec) Ci= τi/ri Ci i/ri SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT).. D = SINGLE PULSE ( THERMAL RESPONSE ) R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 3 τ 2 τ 3 Ci= τi/ri Ci i/ri τ C τ Ri ( C/W) τi (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc. E-6 E t, Rectangular Pulse Duration (sec) Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) International Rectifier May 2, 23

8 AUIRGP5B6PD/AUIRGP5B6PD-E L K DUT L VCC 8 V Rg DUT 48V Fig.C.T. - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit PFC diode L R = VCC ICM Rg DUT / DRIVER VCC Rg DUT VCC Fig.C.T.3 - Switching Loss Circuit Fig.C.T.4 - Resistive Load Circuit REVERSE RECOVERY CIRCUIT V R = 2V. Ω dif/dt ADJUST L = 7μH G D IRFP25 D.U.T. S Fig. C.T.5 - Reverse Recovery Parameter Test Circuit International Rectifier May 2, 23

9 AUIRGP5B6PD/AUIRGP5B6PD-E VCE (V) tf % I CE % V CE 5 5 5% I CE -5 Eof f Time (μs) Fig. WF - Typ. Turn-off Loss using Fig. CT.3 ICE (A) VCE (V) tr % I CE 9% I CE TEST CURRENT 5% V CE Eon Loss Time(μs) Fig. WF2 - Typ. Turn-on Loss using Fig. CT.3 ICE (A) 3 I F t a trr t b Q rr 4 2 I RRM.5 I RRM di(rec)m/dt 5.75 I RRM di /dt f. di f/dt - Rate of change of current through zero crossing 2. I RRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and I RRM t rr X I RRM Q rr = 2 5. di (rec)m/dt - Peak rate of change of current during t b portion of t rr Fig. WF3 - Reverse Recovery Waveform and Definitions International Rectifier May 2, 23

10 AUIRGP5B6PD/AUIRGP5B6PD-E TO-247AC Package Outline Dimensions are shown in milimeters (inches) TO-247AC Part Marking Information Part Number IR Logo P5B6PD YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at International Rectifier May 2, 23

11 AUIRGP5B6PD/AUIRGP5B6PD-E TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information Part Number IR Logo 5B6PDE YWWA XX or XX Date Code Y= Year WW= Work Week A= Automotive, Lead Free Lot Code Note: For the most current drawing please refer to IR website at International Rectifier May 2, 23

12 AUIRGP5B6PD/AUIRGP5B6PD-E IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR s terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or enhanced plastic. Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 6949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements For technical support, please contact IR s Technical Assistance Center WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245 Tel: (3) International Rectifier May 2, 23