IRGPC40S PD TO-247AC. Features V CES = 600V. V CE(sat) 1.8V. Description. Absolute Maximum Ratings. Thermal Resistance

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1 INSULATED GATE BIPOLAR TRANSISTOR PD IRGP4S Standard Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for line frequency operation (to 4Hz) See Fig. for urrent vs. Frequency curve G V ES = 6V V E(sat).8V E GE = 5V, I = 3A Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high-current applications. Absolute Maximum Ratings TO-247A Parameter Max. Units V ES ollector-to-emitter Voltage 6 V T = 25 ontinuous ollector urrent 5 T = ontinuous ollector urrent 3 A I M Pulsed ollector urrent 24 I LM lamped Inductive Load urrent 24 V GE Gate-to-Emitter Voltage ±2 V E ARV Reverse Voltage Avalanche Energy ƒ 5 mj P T = 25 Maximum Power Dissipation 6 W P T = Maximum Power Dissipation 65 T J Operating Junction and -55 to +5 T STG Storage Temperature Range Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θj Junction-to-ase R θs ase-to-sink, flat, greased surface /W R θja Junction-to-Ambient, typical socket mount Wt Weight (.2) g (oz)

2 IRGP4S Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage V V GE = V, I = 25µA V (BR)ES Emitter-to-ollector Breakdown Voltage V V GE = V, I =.A V (BR)ES / T J Temperature oeff. of Breakdown Voltage V/ V GE = V, I =.ma V E(on) ollector-to-emitter Saturation Voltage I = 3A V GE = 5V V I = 6A See Fig. 2, I = 3A, T J = 5 V GE(th) Gate Threshold Voltage V E = V GE, I = 25µA V GE(th) / T J Temperature oeff. of Threshold Voltage mv/ V E = V GE, I = 25µA g fe Forward Transconductance S V E = V, I = 3A I ES Zero Gate Voltage ollector urrent µa V GE = V, V E = 6V V GE = V, V E = 6V, T J = 5 I GES Gate-to-Emitter Leakage urrent ± na V GE = ±2V Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) I = 3A Q ge Gate - Emitter harge (turn-on) n V = 4V See Fig. 8 Q gc Gate - ollector harge (turn-on) V GE = 5V t d(on) Turn-On Delay Time T J = 25 t r Rise Time ns I = 3A, V = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = Ω t f Fall Time Energy losses include "tail" E on Turn-On Switching Loss E off Turn-Off Switching Loss mj See Fig. 9,,, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time T J = 5, t r Rise Time ns I = 3A, V = 48V t d(off) Turn-Off Delay Time V GE = 5V, R G = Ω t f Fall Time Energy losses include "tail" E ts Total Switching Loss mj See Fig., 4 L E Internal Emitter Inductance nh Measured 5mm from package ies Input apacitance V GE = V oes Output apacitance pf V = 3V See Fig. 7 res Reverse Transfer apacitance ƒ =.MHz Notes: Repetitive rating; V GE =2V, pulse width limited by max. junction temperature. ( See fig. 3b ) V =8%(V ES ), V GE =2V, L=µH, R G = Ω, ( See fig. 3a ) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 8µs; duty factor.%. Pulse width 5.µs, single shot.

3 IRGP4S 8 LOAD URRENT (A) Square wave: 6% of rated voltage For both: Duty cycle: 5% T J = 25 T sink = 9 Gate drive as specified Power Dissipation = 35W Triangular wave: lamp voltage: 8% of rated Ideal diodes. f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) I, ollector-to-emitter urrent (A) T J = 25 T J = 5 V GE= 5V 2µs PULSE WIDTH. V E, ollector-to-emitter Voltage (V) I, ollector-to-emitter urrent (A) T = 25 J T = 5 J V = V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics

4 IRGP4S Maximum D ollector urrent (A) V GE = 5V LIMITED BY PAKAGE V E, ollector-to-emitter Voltage (V) V GE = 5V 8µs PULSE WIDTH I = 62A I = 3A I = 6A T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature T, ase Temperature ( ) Fig. 5 - ollector-to-emitter Voltage vs. ase Temperature Thermal Response (Z thj ). D = SINGLE PULSE.2 (THERMAL RESPONSE) Notes:.. Duty factor D = t / t 2 2. Peak T J = P DMx Z thj + T t, Rectangular Pulse Duration (sec) P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-ase

5 IRGP4S, apacitance (pf) 3 2 V GE = V, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res V GE, Gate-to-Emitter Voltage (V) V E = 4V I = 3A V E, ollector-to-emitter Voltage (V) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Q, Total Gate harge (n) g Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V = 48V V GE = 5V T = 25 I = 3A Total Switching Losses (mj) R G = Ω V GE= 5V V = 48V I = 62A I = 3A I = 6A R G, Gate Resistance ( Ω) W T, ase Temperature ( ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. ase Temperature

6 IRGP4S Total Switching Losses (mj) R G = Ω T = 5 V = 48V V GE = 5V I, ollector-to-emitter urrent (A) V GE = 2V T = 25 J SAFE OPERATING AREA I, ollector-to-emitter urrent (A) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent V E, ollector-to-emitter Voltage (V) Fig. 2 - Turn-Off SOA * 2.3 (.8) 9.7 (.775) 4.8 (.583) 4.2 (.559) 2.4 (.94) 2. (.79) 2X 5.45 (.25) 2X 5.9 (.626) 5.3 (.62) - B (.33) 3. (.8) - A (.43) 3.55 (.4).25 (.) M 5.5 (.27) 2X (.7) 3.7 (.45) 5.5 (.27) 4.5 (.77).4 (.56) 3X. (.39).25 (.) M A S D B M - D (.29) 4.7 (.85) 2.5 (.89).5 (.59) 4.8 (.3) 3X.4 (.6) 2.6 (.2) 2.2 (.87) NOTES: DIMENSIONS & TOLERANING PER ANSI Y4.5M, ONTROLLING DIMENSION : INH. 3 DIMENSIO NS ARE SHOW N MILLIMETERS (INHES). 4 ONFORM S TO JEDE OUTLINE TO-247A. LEAD ASSIGNMENTS - GATE 2 - O LLETO R 3 - EMITTER 4 - O LLETO R * LONGER LEADED (2mm) VERSION AVAILABLE (TO-247AD) TO ORDE R ADD "-E " SUFFIX TO PART NUMBER ONFORMS TO JEDE OUTLINE TO-247A (TO-3P) Dimensions in Millimeters and (Inches)

7 IRGP4S 5V V L V * D.U.T. - 48V 48µF 96V R L = 48V 4 X * Driver same type as D.U.T.; Vc = 8% of Vce(max) * Note: Due to the 5V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - lamped Inductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit I 5V V L Driver* D.U.T. V ƒ Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., V = 48V 9% ƒ V 9% % t d(off) Fig. 4b - Switching Loss Waveforms I 5% % t d(on) tr E on t f E off t=5µs E ts = (E on +E off )

8 Note: For the most current drawings please refer to the IR website at: