Features. n-channel TO-220AB. 1

Transcription

1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5 khz, and Short Circuit Rated to 25 C, V GE = 5V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-22AB package Lead-Free Benefits Latest generation 4 IGBTs offer highest power density motor controls possible HEXFRED TM diodes optimized for performance with IGBTs Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGBC2KD2 and IRGBC2MD2 products For hints see design tip 973 Absolute Maximum Ratings IRG4BC2KDPbF Parameter Max Units V CES Collector-to-Emitter Voltage 6 V I T C = 25 C Continuous Collector Current 6 I T C = C Continuous Collector Current 9 I CM Pulsed Collector Current 32 A I LM Clamped Inductive Load Current 32 I T C = C Diode Continuous Forward Current 7 I FM Diode Maximum Forward Current 32 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 2 V P T C = 25 C Maximum Power Dissipation 6 P T C = C Maximum Power Dissipation 24 W T J Operating Junction and-55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec 3 ( 63 in ( 6mm) from case) Mounting Torque, 6-32 or M3 Screw lbf in ( N m) Thermal Resistance Parameter Min Typ Max Units R θjc Junction-to-Case - IGBT 2 R θjc Junction-to-Case - Diode 3 5 C/W R θcs Case-to-Sink, flat, greased surface 5 R θja Junction-to-Ambient, typical socket mount 8 Wt Weight 2 ( 7) g (oz) G C E n-channel TO-22AB PD Short Circuit Rated UltraFast IGBT V CES = 6V V CE(on) typ = 2 GE = 5V, I C = 9 A 2/23/3

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min Typ Max Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 6 V V GE = V, I C = 25µA V (BR)CES/ T J Temperature Coeff of Breakdown Voltage 49 V/ C V GE = V, I C = ma V CE(on) Collector-to-Emitter Saturation Voltage I C = 9 A V GE = 5V 3 V I C = 6A See Fig 2, I C = 9 A, T J = 5 C V GE(th) Gate Threshold Voltage 3 6 V CE = V GE, I C = 25µA V GE(th) / T J Temperature Coeff of Threshold Voltage - mv/ C V CE = V GE, I C = 25µA g fe Forward Transconductance S V CE = V, I C = 9 A I CES Zero Gate Voltage Collector Current 25 µa V GE = V, V CE = 6V V GE = V, V CE = 6V, T J = 5 C V FM Diode Forward Voltage Drop 4 7 V I C = 8 A See Fig I C = 8 A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min Typ Max Units Conditions Q g Total Gate Charge (turn-on) 34 5 I C = 9 A Q ge Gate - Emitter Charge (turn-on) nc V CC = 4V See Fig 8 Q gc Gate - Collector Charge (turn-on) 4 2 V GE = 5V t d(on) Turn-On Delay Time 54 t r Rise Time 34 T J = 25 C ns t d(off) Turn-Off Delay Time 8 27 I C = 9 A, V CC = 48V t f Fall Time 72 V GE = 5V, R G = 5Ω E on Turn-On Switching Loss 34 Energy losses include "tail" E off Turn-Off Switching Loss 3 mj and diode reverse recovery E ts Total Switching Loss See Fig 9,,4 t sc Short Circuit Withstand Time µs V CC = 36V, T J = 25 C V GE = 5V, R G = 5Ω, V CPK < 5V t d(on) Turn-On Delay Time 5 T J = 5 C, See Fig,4 t r Rise Time 37 I C = 9 A, V CC = 48V ns t d(off) Turn-Off Delay Time 22 V GE = 5V, R G = 5Ω t f Fall Time 6 Energy losses include "tail" E ts Total Switching Loss 85 mj and diode reverse recovery L E Internal Emitter Inductance 7 5 nh Measured 5mm from package C ies Input Capacitance 45 V GE = V C oes Output Capacitance 6 pf V CC = 3V See Fig 7 C res Reverse Transfer Capacitance 4 ƒ = MHz t rr Diode Reverse Recovery Time ns T J = 25 C See Fig 55 9 T J = 25 C 4 I F = 8 A I rr Diode Peak Reverse Recovery Current A T J = 25 C See Fig T J = 25 C 5 V R = 2V Q rr Diode Reverse Recovery Charge nc T J = 25 C See Fig T J = 25 C 6 di/dt = 2Aµs di (rec)m /dt Diode Peak Rate of Fall of Recovery 24 A/µs T J = 25 C See Fig During t b 2 T J = 25 C 7 2

3 For both: LOAD CURRENT (A) Square wave: 6% of rated voltage I Duty cycle: 5% T J = 25 C T sink = 9 C Gate drive as specified Power Dissipation = 3 W 2 Ideal diodes. f, Frequency (KHz) Fig - Typical Load Current vs Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T = 25 o T = 5 o V GE = 5V 2µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T = 5 o T = 25 o V CC = 5V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig 2 - Typical Output Characteristics Fig 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) V GE = 5V 8 us PULSE WIDTH I C = 8 A I C = 9 A 9 A I C = 4.5 A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig 4 - Maximum Collector Current vs Case Temperature Fig 5 - Typical Collector-to-Emitter Voltage vs Junction Temperature Thermal Response (Z thjc ). D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t2. 2. Peak T J = PDM x Z thjc + TC..... t, Rectangular Pulse Duration (sec) PDM t t2 Fig 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4

5 C, Capacitance (pf) VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 4V I C = 9.A C res V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig 7 - Typical Capacitance vs Collector-to-Emitter Voltage Fig 8 - Typical Gate Charge vs Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 48V V GE = 5V T = 25 I C = 9.A Total Switching Losses (mj) R G 5Ω = Ohm V GE = 5V V CC = 48V I C= 8A I C= 9 A 9A I C= 4.5A R G, Gate Resistance ( (Ohm) Ω ) T J, Junction Temperature ( C ) Fig 9 - Typical Switching Losses vs Gate Resistance Fig - Typical Switching Losses vs Junction Temperature 5

6 Total Switching Losses (mj) R G = 5Ω Ohm T J = 5 C V CC = 48V V GE = 5V I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) V GE = 2V T = 25 o SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig - Typical Switching Losses vs Collector-to-Emitter Current Fig 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J = 5 C T J = 25 C T J = 25 C Forward Voltage Drop - V FM (V) Fig 3 - Maximum Forward Voltage Drop vs Instantaneous Forward Current 6

7 8 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C I F = 6A t rr - (ns) 6 4 I F = 8.A I IRRM - (A) I F = 8.A I F = 6A 2 I F = 4.A I = 4.A F di f /dt - (A/µs) Fig 4 - Typical Reverse Recovery vs di f /dt di f /dt - (A/µs) Fig 5 - Typical Recovery Current vs di f /dt 5 4 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C Q RR - (nc) 3 2 I F = 6A I F = 8.A di(rec)m/dt - (A/µs) I F = 4.A I F = 8.A I F = 6A I = 4.A F di f /dt - (A/µs) di f /dt - (A/µs) Fig 6 - Typical Stored Charge vs di f /dt Fig 7 - Typical di (rec)m /dt vs di f /dt 7

8 Same type device as D.U.T. +Vge 9% Vge Vce 8% of Vce 43µF D.U.T. Ic % Vce Ic 9% Ic 5% Ic td(off) tf Fig 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µs Eoff = Vce ic Ic dt dt t t t2 Fig 8b - Test Waveforms for Circuit of Fig 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig 8c - Test Waveforms for Circuit of Fig 8a, Fig 8d - Test Waveforms for Circuit of Fig 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8

9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t t t2 Figure 8e Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 48V R L = 48V 4 X I C 5V 6µF V Figure 9 Clamped Inductive Load Test Circuit Figure 2 Pulsed Collector Current Test Circuit 9

10 Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=µH, R G = 5Ω (figure 9) ƒpulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. TO-22AB Package Outline 2.87 (.3) 2.62 (.3).54 (.45).29 (.45) 3.78 (.49) 3.54 (.39) - A (.85) 4.2 (.65) - B -.32 (.52).22 (.48) 5.24 (.6) 4.84 (.584) 4.9 (.555) 3.47 (.53) (.255) 6. (.24).5 (.45) MIN 4.6 (.6) 3.55 (.4) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK - GATE - GATE 2 - DRAIN - GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR.4 (.55) 3X.5 (.45) 2.54 (.) 2X 3X.93 (.37).69 (.27).36 (.4) M B A M.55 (.22) 3X.46 (.8) 2.92 (.5) 2.64 (.4) NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-22AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-22AB Part Marking Information EXAMPLE: T HIS IS AN IRF LOT CODE 789 AS S EMB LED ON WW 9, 997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E RNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 997 WEEK 9 LINE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.2/3

11 Note: For the most current drawings please refer to the IR website at: