IRG4BC20FPbF Fast Speed IGBT
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1 PD INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20FPbF Fast Speed IGBT Features C Fast: Optimized fr medium perating frequencies ( -5 khz in hard switching, >20 khz in resnant mde). Generatin 4 IGBT design prvides tighter parameter distributin and higher efficiency than Generatin 3 Industry standard TO-220AB package Lead-Free G E n-channel V CES = 600V V CE(n) typ. GE = 5V, I C = 9.0A Benefits Generatin 4 IGBTs ffer highest efficiency available IGBTs ptimized fr specified applicatin cnditins Designed t be a "drp-in" replacement fr equivalent industry-standard Generatin 3 IR IGBTs Abslute Maximum Ratings Parameter Max. Units V CES Cllectr-t-Emitter Breakdwn Vltage 600 V I T C = 25 C Cntinuus Cllectr Current 6 I T C = 0 C Cntinuus Cllectr Current 9.0 A I CM Pulsed Cllectr Current 64 I LM Clamped Inductive Lad Current 64 V GE Gate-t-Emitter Vltage ± 20 V E ARV Reverse Vltage Avalanche Energy ƒ 5.0 mj P T C = 25 C Maximum Pwer Dissipatin 60 P T C = 0 C Maximum Pwer Dissipatin 24 W T J Operating Junctin and -55 t + 50 T STG Strage Temperature Range C Sldering Temperature, fr secnds 300 (0.063 in. (.6mm) frm case ) Munting trque, 6-32 r M3 screw. lbf in (.N m) Thermal Resistance TO-220AB Parameter Typ. Max. Units R θjc Junctin-t-Case 2. R θcs Case-t-Sink, Flat, Greased Surface 0.5 C/W R θja Junctin-t-Ambient, typical scket munt 80 Wt Weight 2.0 (0.07) g (z) 8/23/04
2 Electrical T J = 25 C (unless therwise specified) Parameter Min. Typ. Max. Units Cnditins V (BR)CES Cllectr-t-Emitter Breakdwn Vltage 600 V V GE = 0V, I C = 250µA V (BR)ECS Emitter-t-Cllectr Breakdwn Vltage 8 V V GE = 0V, I C =.0A V (BR)CES / T J Temperature Ceff. f Breakdwn Vltage 0.72 V/ C V GE = 0V, I C =.0mA I C = 9.0A V GE = 5V V CE(ON) Cllectr-t-Emitter Saturatin Vltage 2.06 I C = 6A See Fig.2, 5 V.76 I C = 9.0A, T J = 50 C V GE(th) Gate Threshld Vltage V CE = V GE, I C = 250µA V GE(th) / T J Temperature Ceff. f Threshld Vltage - mv/ C V CE = V GE, I C = 250µA g fe Frward Transcnductance S V CE = 0V, I C = 9.0A 250 V GE = 0V, V CE = 600V I CES Zer Gate Vltage Cllectr Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 00 V GE = 0V, V CE = 600V, T J = 50 C I GES Gate-t-Emitter Leakage Current ±0 na V GE = ±20V Switching T J = 25 C (unless therwise specified) Parameter Min. Typ. Max. Units Cnditins Q g Ttal Gate Charge (turn-n) I C = 9.0A Q ge Gate - Emitter Charge (turn-n) nc V CC = 400V See Fig. 8 Q gc Gate - Cllectr Charge (turn-n) V GE = 5V t d(n) Turn-On Delay Time 24 t r Rise Time 7 T J = 25 C ns t d(ff) Turn-Off Delay Time I C = 9.0A, V CC = 480V t f Fall Time V GE = 5V, R G = 50Ω E n Turn-On Switching Lss 0.07 Energy lsses include "tail" E ff Turn-Off Switching Lss 0.60 mj See Fig. 9,, 4 E ts Ttal Switching Lss t d(n) Turn-On Delay Time 24 T J = 50 C, t r Rise Time 7 I C = 9.0A, V CC = 480V ns t d(ff) Turn-Off Delay Time 300 V GE = 5V, R G = 50Ω t f Fall Time 340 Energy lsses include "tail" E ts Ttal Switching Lss.30 mj See Fig., 4 L E Internal Emitter Inductance 7.5 nh Measured 5mm frm package C ies Input Capacitance 540 V GE = 0V C es Output Capacitance 37 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 7.0 ƒ =.0MHz Ntes: Repetitive rating; V GE = 20V, pulse width limited by max. junctin temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = 50Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junctin temperature. Pulse width 80µs; duty factr 0.%. Pulse width 5.0µs, single sht. 2
3 Lad Current ( A ) Square wave: 60% f rated vltage I Fr bth: Duty cycle: 50% T J = 25 C T sink = 90 C Gate drive as specified Pwer Dissipatin = 3W Triangular wave: I Clamp vltage: 80% f rated 5 Ideal dides 0 A 0. 0 f, Frequency (khz) Fig. - Typical Lad Current vs. Frequency (Lad Current = I RMS f fundamental) 0 0 I C, Cllectr-t-Emitter Current (A) T = 25 J C T = 50 J C V GE = 5V 20µs PULSE WIDTH V CE, Cllectr-t-Emitter Vltage (V) I C, Cllectr-t-Emitter Current (A) T = 50 J C T J = 25 C V CC = 50V 5µs PULSE WIDTH V GE, Gate-t-Emitter Vltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3
4 Maximum DC Cllectr Current(A) V CE, Cllectr-t-Emitter Vltage(V) V GE = 5V 80 us PULSE WIDTH I C = 8 A I C = A I C = 4.5 A T C, Case Temperature ( C) T J, Junctin Temperature ( C) Fig. 4 - Maximum Cllectr Current vs. Case Temperature Fig. 5 - Typical Cllectr-t-Emitter Vltage vs. Junctin Temperature Thermal Respnse (Z thjc ) SINGLE PULSE (THERMAL RESPONSE) Ntes:. Duty factr D = t / t2 2. Peak T J= PDM x Z thjc + TC t, Rectangular Pulse Duratin (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junctin-t-Case 4
5 C, Capacitance (pf) 00 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce SHORTED Cres = Cgc 800 Ces = Cce + Cgc 600 C ies C es C res 0 0 V CE, Cllectr-t-Emitter Vltage (V) V GE, Gate-t-Emitter Vltage (V) V CC = 400V I C = 9.0A Q G, Ttal Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Cllectr-t-Emitter Vltage Fig. 8 - Typical Gate Charge vs. Gate-t-Emitter Vltage Ttal Switching Lsses (mj) V CC = 480V V GE = 5V T = 25 J C I C = 9.0A Ttal Switching Lsses (mj) R G = 50Ohm Ω V GE = 5V V CC = 480V I C = 8A I C = 9.09 A I C = 4.5A R G, Gate Resistance (Ohm) Ω T J, Junctin Temperature ( C ) Fig. 9 - Typical Switching Lsses vs. Gate Resistance Fig. - Typical Switching Lsses vs. Junctin Temperature 5
6 Ttal Switching Lsses (mj) R G = 50Ohm Ω T J = 50 C V CC = 480V V GE = 5V I C, Cllectr-t-emitter Current (A) I C, Cllectr-t-Emitter Current (A) 0 V GE = 20V T J = 25 C SAFE OPERATING AREA 0 00 V CE, Cllectr-t-Emitter Vltage (V) Fig. - Typical Switching Lsses vs. Cllectr-t-Emitter Current Fig. 2 - Turn-Off SOA 6
7 50V c 00V L V * C D.U.T. d 0-480V 480µF 960V R L = 480V 4 X I C@25 C * Driver same type as D.U.T.; Vc = 80% f Vce(max) * Nte: Due t the 50V pwer supply, pulse width and inductr will increase t btain rated Id. Fig. 3a - Clamped Inductive Lad Test Circuit Fig. 3b - Pulsed Cllectr Current Test Circuit I C 50V 00V c L Driver* d V C D.U.T. e Fig. 4a - Switching Lss Test Circuit * Driver same type as D.U.T., VC = 480V c d 90% e % V C 90% t d(ff) Fig. 4b - Switching Lss Wavefrms I C 5% % t d(n) tr E n t f E ff t=5µs E ts = (E n +E ff ) 7
8 TO-220AB Package Outline Dimensins are shwn in millimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) - A (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530) (.255) 6. (.240).5 (.045) MIN 4.06 (.60) 3.55 (.40) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CPACK - GATE - GATE 2 - DRAIN - GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X.40 (.055).5 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) 2.54 (.0) 2X NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Infrmatin EXAMPLE: THIS IS AN IRF LOT CODE 789 AS S E MB LE D ON WW 9, 997 IN THE ASSEMBLY LINE "C" Nte: "P" in assembly line psitin indicates "Lead-Free" INTE RNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 997 WEEK 9 LINE C Data and specificatins subject t change withut ntice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segund, Califrnia 90245, USA Tel: (3) TAC Fax: (3) Visit us at fr sales cntact infrmatin. 08/04 8
9 Nte: Fr the mst current drawings please refer t the IR website at:
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
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PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationPRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units
PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High abort circuit
More informationV DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD -9586 INSULTED GTE BIPOLR TRNSISTOR IRG4P50UPbF UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT
More informationIGBT SIP Module (Short Circuit Rated Ultrafast IGBT)
IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationIRG7R313UPbF. Key Parameters V CE min 330 V V CE(ON) I C = 20A 1.35 V I RP T C = 25 C 160 A T J max 150 C
PDP TRENCH IGBT PD - 97484 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationInsulated Gate Bipolar Transistor Ultralow V CE(on), 250 A
Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT-7 600 V.33 V 50 A DC to khz SOT-7
More informationE n-channel. Parameter Min. Typ. Max. Units
INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationIRGB4086PbF IRGS4086PbF
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for Improved Panel Efficiency l High
More informationl Advanced Process Technology TO-220AB IRF640NPbF
查询 IRF640NLPBF 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD 9470F IRG4P50U INSULTED GTE BIPOLR TRNSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95661 IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationAbsolute Maximum Ratings
l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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PD - 94923 NSULTED GTE BPOLR TRNSSTOR RG4P30UPbF UltraFast Speed GBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationFeatures TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
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