IRG4BC20FPbF Fast Speed IGBT

Size: px
Start display at page:

Download "IRG4BC20FPbF Fast Speed IGBT"

Transcription

1 PD INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20FPbF Fast Speed IGBT Features C Fast: Optimized fr medium perating frequencies ( -5 khz in hard switching, >20 khz in resnant mde). Generatin 4 IGBT design prvides tighter parameter distributin and higher efficiency than Generatin 3 Industry standard TO-220AB package Lead-Free G E n-channel V CES = 600V V CE(n) typ. GE = 5V, I C = 9.0A Benefits Generatin 4 IGBTs ffer highest efficiency available IGBTs ptimized fr specified applicatin cnditins Designed t be a "drp-in" replacement fr equivalent industry-standard Generatin 3 IR IGBTs Abslute Maximum Ratings Parameter Max. Units V CES Cllectr-t-Emitter Breakdwn Vltage 600 V I T C = 25 C Cntinuus Cllectr Current 6 I T C = 0 C Cntinuus Cllectr Current 9.0 A I CM Pulsed Cllectr Current 64 I LM Clamped Inductive Lad Current 64 V GE Gate-t-Emitter Vltage ± 20 V E ARV Reverse Vltage Avalanche Energy ƒ 5.0 mj P T C = 25 C Maximum Pwer Dissipatin 60 P T C = 0 C Maximum Pwer Dissipatin 24 W T J Operating Junctin and -55 t + 50 T STG Strage Temperature Range C Sldering Temperature, fr secnds 300 (0.063 in. (.6mm) frm case ) Munting trque, 6-32 r M3 screw. lbf in (.N m) Thermal Resistance TO-220AB Parameter Typ. Max. Units R θjc Junctin-t-Case 2. R θcs Case-t-Sink, Flat, Greased Surface 0.5 C/W R θja Junctin-t-Ambient, typical scket munt 80 Wt Weight 2.0 (0.07) g (z) 8/23/04

2 Electrical T J = 25 C (unless therwise specified) Parameter Min. Typ. Max. Units Cnditins V (BR)CES Cllectr-t-Emitter Breakdwn Vltage 600 V V GE = 0V, I C = 250µA V (BR)ECS Emitter-t-Cllectr Breakdwn Vltage 8 V V GE = 0V, I C =.0A V (BR)CES / T J Temperature Ceff. f Breakdwn Vltage 0.72 V/ C V GE = 0V, I C =.0mA I C = 9.0A V GE = 5V V CE(ON) Cllectr-t-Emitter Saturatin Vltage 2.06 I C = 6A See Fig.2, 5 V.76 I C = 9.0A, T J = 50 C V GE(th) Gate Threshld Vltage V CE = V GE, I C = 250µA V GE(th) / T J Temperature Ceff. f Threshld Vltage - mv/ C V CE = V GE, I C = 250µA g fe Frward Transcnductance S V CE = 0V, I C = 9.0A 250 V GE = 0V, V CE = 600V I CES Zer Gate Vltage Cllectr Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 00 V GE = 0V, V CE = 600V, T J = 50 C I GES Gate-t-Emitter Leakage Current ±0 na V GE = ±20V Switching T J = 25 C (unless therwise specified) Parameter Min. Typ. Max. Units Cnditins Q g Ttal Gate Charge (turn-n) I C = 9.0A Q ge Gate - Emitter Charge (turn-n) nc V CC = 400V See Fig. 8 Q gc Gate - Cllectr Charge (turn-n) V GE = 5V t d(n) Turn-On Delay Time 24 t r Rise Time 7 T J = 25 C ns t d(ff) Turn-Off Delay Time I C = 9.0A, V CC = 480V t f Fall Time V GE = 5V, R G = 50Ω E n Turn-On Switching Lss 0.07 Energy lsses include "tail" E ff Turn-Off Switching Lss 0.60 mj See Fig. 9,, 4 E ts Ttal Switching Lss t d(n) Turn-On Delay Time 24 T J = 50 C, t r Rise Time 7 I C = 9.0A, V CC = 480V ns t d(ff) Turn-Off Delay Time 300 V GE = 5V, R G = 50Ω t f Fall Time 340 Energy lsses include "tail" E ts Ttal Switching Lss.30 mj See Fig., 4 L E Internal Emitter Inductance 7.5 nh Measured 5mm frm package C ies Input Capacitance 540 V GE = 0V C es Output Capacitance 37 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 7.0 ƒ =.0MHz Ntes: Repetitive rating; V GE = 20V, pulse width limited by max. junctin temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = 50Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junctin temperature. Pulse width 80µs; duty factr 0.%. Pulse width 5.0µs, single sht. 2

3 Lad Current ( A ) Square wave: 60% f rated vltage I Fr bth: Duty cycle: 50% T J = 25 C T sink = 90 C Gate drive as specified Pwer Dissipatin = 3W Triangular wave: I Clamp vltage: 80% f rated 5 Ideal dides 0 A 0. 0 f, Frequency (khz) Fig. - Typical Lad Current vs. Frequency (Lad Current = I RMS f fundamental) 0 0 I C, Cllectr-t-Emitter Current (A) T = 25 J C T = 50 J C V GE = 5V 20µs PULSE WIDTH V CE, Cllectr-t-Emitter Vltage (V) I C, Cllectr-t-Emitter Current (A) T = 50 J C T J = 25 C V CC = 50V 5µs PULSE WIDTH V GE, Gate-t-Emitter Vltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Cllectr Current(A) V CE, Cllectr-t-Emitter Vltage(V) V GE = 5V 80 us PULSE WIDTH I C = 8 A I C = A I C = 4.5 A T C, Case Temperature ( C) T J, Junctin Temperature ( C) Fig. 4 - Maximum Cllectr Current vs. Case Temperature Fig. 5 - Typical Cllectr-t-Emitter Vltage vs. Junctin Temperature Thermal Respnse (Z thjc ) SINGLE PULSE (THERMAL RESPONSE) Ntes:. Duty factr D = t / t2 2. Peak T J= PDM x Z thjc + TC t, Rectangular Pulse Duratin (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junctin-t-Case 4

5 C, Capacitance (pf) 00 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce SHORTED Cres = Cgc 800 Ces = Cce + Cgc 600 C ies C es C res 0 0 V CE, Cllectr-t-Emitter Vltage (V) V GE, Gate-t-Emitter Vltage (V) V CC = 400V I C = 9.0A Q G, Ttal Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Cllectr-t-Emitter Vltage Fig. 8 - Typical Gate Charge vs. Gate-t-Emitter Vltage Ttal Switching Lsses (mj) V CC = 480V V GE = 5V T = 25 J C I C = 9.0A Ttal Switching Lsses (mj) R G = 50Ohm Ω V GE = 5V V CC = 480V I C = 8A I C = 9.09 A I C = 4.5A R G, Gate Resistance (Ohm) Ω T J, Junctin Temperature ( C ) Fig. 9 - Typical Switching Lsses vs. Gate Resistance Fig. - Typical Switching Lsses vs. Junctin Temperature 5

6 Ttal Switching Lsses (mj) R G = 50Ohm Ω T J = 50 C V CC = 480V V GE = 5V I C, Cllectr-t-emitter Current (A) I C, Cllectr-t-Emitter Current (A) 0 V GE = 20V T J = 25 C SAFE OPERATING AREA 0 00 V CE, Cllectr-t-Emitter Vltage (V) Fig. - Typical Switching Lsses vs. Cllectr-t-Emitter Current Fig. 2 - Turn-Off SOA 6

7 50V c 00V L V * C D.U.T. d 0-480V 480µF 960V R L = 480V 4 X I C@25 C * Driver same type as D.U.T.; Vc = 80% f Vce(max) * Nte: Due t the 50V pwer supply, pulse width and inductr will increase t btain rated Id. Fig. 3a - Clamped Inductive Lad Test Circuit Fig. 3b - Pulsed Cllectr Current Test Circuit I C 50V 00V c L Driver* d V C D.U.T. e Fig. 4a - Switching Lss Test Circuit * Driver same type as D.U.T., VC = 480V c d 90% e % V C 90% t d(ff) Fig. 4b - Switching Lss Wavefrms I C 5% % t d(n) tr E n t f E ff t=5µs E ts = (E n +E ff ) 7

8 TO-220AB Package Outline Dimensins are shwn in millimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) - A (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530) (.255) 6. (.240).5 (.045) MIN 4.06 (.60) 3.55 (.40) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CPACK - GATE - GATE 2 - DRAIN - GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X.40 (.055).5 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) 2.54 (.0) 2X NOTES: DIMENSIONING & TOLERANCING PER ANSI Y4.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Infrmatin EXAMPLE: THIS IS AN IRF LOT CODE 789 AS S E MB LE D ON WW 9, 997 IN THE ASSEMBLY LINE "C" Nte: "P" in assembly line psitin indicates "Lead-Free" INTE RNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 997 WEEK 9 LINE C Data and specificatins subject t change withut ntice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segund, Califrnia 90245, USA Tel: (3) TAC Fax: (3) Visit us at fr sales cntact infrmatin. 08/04 8

9 Nte: Fr the mst current drawings please refer t the IR website at:

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) INSULATED GATE BIPOLAR TRANSISTOR PD - 9587 IRG4PH40UPbF Ultra Fast Speed IGBT Features UltraFast: Optimized fr high perating frequencies up t 40 khz in hard switching, >200 khz in resnant mde New IGBT

More information

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) PD - 9586A IRG4PC30S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features C Standard: Optimized fr minimum saturatin vltage and lw perating frequencies ( < khz) Generatin 4 IGBT design prvides

More information

Features. n-channel TO-220AB. 1

Features. n-channel TO-220AB.  1 PD-95640 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve

More information

PD IRG4PC50WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC. 1

PD IRG4PC50WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power

More information

PD IRG4PC30WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC. 1

PD IRG4PC30WPbF. INSULATED GATE BIPOLAR TRANSISTOR Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency of all power

More information

PD IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC

PD IRG4PC40KPbF INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, Generation 4 IGBT design provides higher

More information

T J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.

T J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (0.063 in. (1. PD - 94069 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30S-S Standard Speed IGBT Features Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design

More information

PD A IRG4PC60F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC. 1

PD A IRG4PC60F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC.   1 PD - 94442A INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features C Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >20 khz in resonant mode). Generation 4 IGBT design

More information

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) PD - 94076 INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve efficiency

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) INSULATED GATE BIPOLAR TRANSISTOR Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications 2.5kV, 60s insulation voltage Industry-benchmark switching losses

More information

Features. n-channel TO-220AB. 1

Features. n-channel TO-220AB.  1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5 khz, and Short Circuit Rated to µs @ 25 C, V GE

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD - 94443 INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features C UltraFast: Optimized for high operating frequencies up to 50 khz in hard switching, >200 khz in resonant mode. Generation 4

More information

33 A I CM. 114 Gate-to-Emitter Voltage. mj P T C =25 Maximum Power Dissipation. Operating Junction and -55 to T STG

33 A I CM. 114 Gate-to-Emitter Voltage. mj P T C =25 Maximum Power Dissipation. Operating Junction and -55 to T STG INSULATED GATE BIPOLAR TRANSISTOR Features Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides tighter parameter distribution and

More information

PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD - 9.629 PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses

More information

IRG4PC40K Short Circuit Rated UltraFast IGBT

IRG4PC40K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 9.585B IRG4PC40K Short Circuit Rated UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit

More information

IRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3.

IRG4PH30K PD A. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 1200V. V CE(on) typ. = 3. PD -9580A IRG4PH30K INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs, V CC = 720V, T J = 25 C, Combines low conduction losses with high switching

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) PD -91656C INSULATED GATE BIPOLAR TRANSISTOR IRG4PC40W Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve

More information

Maximum Power Dissipation W C

Maximum Power Dissipation W C PD- 57A INSULATED GATE BIPOLAR TRANSISTOR GA2SA6S Standard Speed IGBT Features C Standard : Optimized for minimum saturation voltage and low operating frequencies up to khz Lowest conduction losses available

More information

IRG4BH20K-S PD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features V CES = 1200V. V CE(on) typ. = 3.17V.

IRG4BH20K-S PD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features V CES = 1200V. V CE(on) typ. = 3.17V. INSULATED GATE BIPOLAR TRANSISTOR Features High short circuit rating optimized for motor control, t sc =µs @ V CC = 720V, T J = 25 C, Combines low conduction losses with high switching speed Latest generation

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD - 9790 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30W-S Features Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve

More information

Absolute Maximum Ratings Parameter Max. Units

Absolute Maximum Ratings Parameter Max. Units PD-95882 PDP Switch IRGP45 Features Key parameters optimized for PDP sustain & Energy recovery applications 4A continuous collector current rating reduces component count High pulse current rating makes

More information

Features. n-channel TO-247AC. 1

Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @36V V CE (start), T J = 25 C, V GE = 5V Combines low conduction

More information

TO-247AC Absolute Maximum Ratings

TO-247AC Absolute Maximum Ratings INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, V CC = 72V,, V GE = 5V Combines low conduction losses with

More information

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD -957 INSULTED GTE BIPOLR TRNSISTOR IRG4PC4SPbF Standard Speed IGBT Features C Standard: Optimized for minimum saturation voltage and low operating frequencies ( < khz) Generation 4 IGBT design provides

More information

n-channel D 2 Pak 1

n-channel D 2 Pak   1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @360V V CE (start),, V GE = 5V Combines low conduction losses

More information

n-channel TO-220AB 1

n-channel TO-220AB   1 PD -949A IRG4BC3KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C High short circuit rating optimized for motor control, t sc =µs,

More information

Features. n-channel TO-247AC. 1

Features. n-channel TO-247AC.  1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design

More information

IRGMC50F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 600V. V CE(on) max = 1.7V

IRGMC50F. Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. n-channel. Features V CES = 600V. V CE(on) max = 1.7V PD -90718B INSULATED GATE BIPOLAR TRANSISTOR IRGMC50F Fast Speed IGBT Features Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 khz - 8 khz Switching-loss

More information

IRG4BC10SD-SPbF IRG4BC10SD-LPbF

IRG4BC10SD-SPbF IRG4BC10SD-LPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives,

More information

n-channel Features 1 TO-247AD Pulse Collector CurrentÃc 82 I LM

n-channel Features   1 TO-247AD Pulse Collector CurrentÃc 82 I LM INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFRED TM ultrafast

More information

Features. n-channel TO-247AC. 1

Features. n-channel TO-247AC.   1 INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) PD- 9788 IRG4PF5WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Optimized for use in Welding and Switch-Mode Power Supply applications V CES = 9V Industry benchmark switching

More information

GA200TD120U PD D. Ultra-Fast TM Speed IGBT "HALF-BRIDGE" IGBT DUAL INT-A-PAK. Features V CES = 1200V. V CE(on) typ. = 2.3V.

GA200TD120U PD D. Ultra-Fast TM Speed IGBT HALF-BRIDGE IGBT DUAL INT-A-PAK. Features V CES = 1200V. V CE(on) typ. = 2.3V. "HALF-BRIDGE" IGBT DUAL INT-A-PAK Features Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-4 khz in hard switching, >2 khz in resonant mode Very low conduction and switching

More information

INSULATED GATE BIPOLAR TRANSISTOR. E n-channel

INSULATED GATE BIPOLAR TRANSISTOR. E n-channel INSULATED GATE BIPOLAR TRANSISTOR PD - 9.780 UltraFast IGBT Features Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency

More information

Features. n-channel TO-247AC. 1

Features. n-channel TO-247AC.   1 INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides

More information

IRGPC40S PD TO-247AC. Features V CES = 600V. V CE(sat) 1.8V. Description. Absolute Maximum Ratings. Thermal Resistance

IRGPC40S PD TO-247AC. Features V CES = 600V. V CE(sat) 1.8V. Description. Absolute Maximum Ratings. Thermal Resistance INSULATED GATE BIPOLAR TRANSISTOR PD - 9.692 IRGP4S Standard Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for line frequency operation (to 4Hz) See Fig. for urrent vs.

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to

More information

IRG4PC50KD PD B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Short Circuit Rated UltraFast IGBT.

IRG4PC50KD PD B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. Short Circuit Rated UltraFast IGBT. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @25 C, V GE

More information

IRGB6B60KD IRGS6B60KD IRGSL6B60KD

IRGB6B60KD IRGS6B60KD IRGSL6B60KD PD - 93E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. µs Short Circuit Capability. Square RBSOA. Ultrasoft

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case ) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 4 khz in hard switching, >2 khz in resonant mode New IGBT design

More information

IRG4PC50FD. Fast CoPack IGBT. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features. n-channel V CES = 600V

IRG4PC50FD. Fast CoPack IGBT. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features. n-channel V CES = 600V INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features C Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω

More information

IRFB260NPbF HEXFET Power MOSFET

IRFB260NPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance

More information

IRG4BC20KD. Short Circuit Rated UltraFast IGBT V CES = 600V. V CE(on) typ. = 2.27V. Thermal Resistance. GE = 15V, I C = 9.

IRG4BC20KD. Short Circuit Rated UltraFast IGBT V CES = 600V. V CE(on) typ. = 2.27V. Thermal Resistance.  GE = 15V, I C = 9. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @ 25 C, V GE

More information

IRG4BC20SD. Standard Speed IGBT

IRG4BC20SD. Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop.4vtyp. @ A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives,

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits

More information

TO-247AC Absolute Maximum Ratings

TO-247AC Absolute Maximum Ratings INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V

More information

TO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

TO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry. l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses

More information

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), A VS-GASA6UP SOT-7 PRIMARY CHARACTERISTICS V CES 6 V V CE(on) (typical).9 V V GE 5 V I C A Speed 8 khz to 3 khz Package SOT-7 Circuit configuration

More information

SMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.

SMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits

More information

IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. UltraFast Co-Pack IGBT V CES = 600V. Features. V CE(on) typ. = 2.

IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. UltraFast Co-Pack IGBT V CES = 600V. Features. V CE(on) typ. = 2. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating up to 80 khz in hard switching, > 200 khz in resonant mode Generation 4 IGBT design

More information

IRG4BC30FD-SPbF. Fast CoPack IGBT. n-channel. Absolute Maximum Ratings Parameter Max. Units INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

IRG4BC30FD-SPbF. Fast CoPack IGBT. n-channel. Absolute Maximum Ratings Parameter Max. Units INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features Fast: optimized for medium operating frequencies (1-5 khz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides

More information

l Advanced Process Technology TO-220AB IRF630N

l Advanced Process Technology TO-220AB IRF630N l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation

More information

IRG4BC20KD-S. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel.

IRG4BC20KD-S. Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V

More information

SMPS MOSFET. V DSS Rds(on) max I D

SMPS MOSFET. V DSS Rds(on) max I D Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche

More information

IRG7PH28UD1PbF IRG7PH28UD1MPbF

IRG7PH28UD1PbF IRG7PH28UD1MPbF IRG7PH28UD1PbF IRG7PH28UD1MPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features Low V CE (ON) trench IGBT technology Low switching

More information

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

AUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C

More information

V DSS R DS(on) max I D

V DSS R DS(on) max I D PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low

More information

PRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units

PRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High abort circuit

More information

V DSS Rds(on) max I D

V DSS Rds(on) max I D Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD -9586 INSULTED GTE BIPOLR TRNSISTOR IRG4P50UPbF UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT

More information

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT)

IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC

More information

IRG7R313UPbF. Key Parameters V CE min 330 V V CE(ON) I C = 20A 1.35 V I RP T C = 25 C 160 A T J max 150 C

IRG7R313UPbF. Key Parameters V CE min 330 V V CE(ON) I C = 20A 1.35 V I RP T C = 25 C 160 A T J max 150 C PDP TRENCH IGBT PD - 97484 Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved

More information

V DSS R DS(on) max I D

V DSS R DS(on) max I D Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note

More information

Insulated Gate Bipolar Transistor Ultralow V CE(on), 250 A

Insulated Gate Bipolar Transistor Ultralow V CE(on), 250 A Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT-7 600 V.33 V 50 A DC to khz SOT-7

More information

E n-channel. Parameter Min. Typ. Max. Units

E n-channel. Parameter Min. Typ. Max. Units INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency

More information

AUTOMOTIVE MOSFET. I D = 140A Fast Switching

AUTOMOTIVE MOSFET. I D = 140A Fast Switching IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω

More information

SMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20

SMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20 SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested

More information

IRGB4086PbF IRGS4086PbF

IRGB4086PbF IRGS4086PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for Improved Panel Efficiency l High

More information

l Advanced Process Technology TO-220AB IRF640NPbF

l Advanced Process Technology TO-220AB IRF640NPbF 查询 IRF640NLPBF 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to

More information

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) PD 9470F IRG4P50U INSULTED GTE BIPOLR TRNSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT

More information

AUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor

AUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor

More information

IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRGBC20KD2-S PD Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT REOVERY DIODE Features Short circuit rated -µs @25, V GE = 5V Switching-loss rating includes all "tail" losses HEXFRED TM soft ultrafast diodes Optimized

More information

IRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A

IRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor

More information

IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF

IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95661 IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC

More information

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A

SMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the

More information

AUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)

AUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited) Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor

More information

Absolute Maximum Ratings

Absolute Maximum Ratings l Logic-Level Gate Drive l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free Description Fifth

More information

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units

Description Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay

More information

V DSS R DS(on) max Qg

V DSS R DS(on) max Qg Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Consumer Use l Lead-Free

More information

IRL3714Z IRL3714ZS IRL3714ZL

IRL3714Z IRL3714ZS IRL3714ZL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low

More information

IRL1404SPbF IRL1404LPbF

IRL1404SPbF IRL1404LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power

More information

AUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20

AUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20 Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive

More information

SMPS MOSFET. V DSS R DS(on) max I D

SMPS MOSFET. V DSS R DS(on) max I D SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,

More information

C Soldering Temperature, for 10 seconds 300 (1.6mm from case )

C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax

More information

AUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16

AUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16 AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically

More information

AUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control

AUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits

More information

PD IRG4PC30UPbF. UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC. 1

PD IRG4PC30UPbF. UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR. Features. n-channel TO-247AC.  1 PD - 94923 NSULTED GTE BPOLR TRNSSTOR RG4P30UPbF UltraFast Speed GBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT

More information

l Advanced Process Technology TO-220AB IRF640NPbF

l Advanced Process Technology TO-220AB IRF640NPbF l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth

More information

Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T

Features TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD

More information