IRG7R313UPbF. Key Parameters V CE min 330 V V CE(ON) I C = 20A 1.35 V I RP T C = 25 C 160 A T J max 150 C

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1 PDP TRENCH IGBT PD Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications l Low V CE(on) and Energy per Pulse (E PULSE TM ) for improved panel efficiency l High repetitive peak current capability l Lead Free package Key Parameters V CE min 33 V V CE(ON) I C = 2A 1.35 V I RP T C = 25 C 16 A T J max 15 C C C G E C G Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low V CE(on) and low E PULSE TM rating per silicon area which improve panel efficiency. Additional features are 15 C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. E n-channel D-Pak G C E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V GE Gate-to-Emitter Voltage ±3 V I T C = 25 C Continuous Collector Current, V 15V 4 I T C = 1 C Continuous Collector, V 15V 2 A I T C = 25 C Repetitive Peak Current c 16 P C = 25 C Power Dissipation 78 W P C = 1 C Power Dissipation Linear Derating Factor T J Operating Junction and W/ C -4 to + 15 T STG Storage Temperature Range C Soldering Temperature for 1 seconds 3 Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case d 1.6 C/W 1 3/31/1

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV CES Collector-to-Emitter Breakdown Voltage 33 V V GE = V, I CE = 25μA ΔΒV CES /ΔT J Breakdown Voltage Temp. Coefficient.4 V/ C Reference to 25 C, I CE = 1mA V GE = 15V, I CE = 12A e 1.35 V GE = 15V, I CE = 2A e V CE(on) Static Collector-to-Emitter Voltage 1.75 V V GE = 15V, I CE = 4A e 2.14 V GE = 15V, I CE = 6A e 1.41 V GE = 15V, I CE = 2A, T J = 15 C e V GE(th) Gate Threshold Voltage V V CE = V GE, I CE = 1.mA ΔV GE(th) /ΔT J Gate Threshold Voltage Coefficient -1 mv/ C I CES Collector-to-Emitter Leakage Current 1. 1 V CE = 33V, V GE = V μa V CE = 33V, V GE = V, T J = 125 C 75 V CE = 33V, V GE = V, T J = 15 C I GES Gate-to-Emitter Forward Leakage 1 na V GE = 3V Gate-to-Emitter Reverse Leakage -1 V GE = -3V g fe Forward Transconductance 47 S V CE = 25V, I CE = 12A Q g Total Gate Charge 33 nc V CE = 24V, I C = 12A, V GE = 15Ve Q gc Gate-to-Collector Charge 12 t d(on) Turn-On delay time 1. I C = 12A, V CC = 196V t r Rise time 13 ns R G = 1Ω, L=21μH t d(off) Turn-Off delay time 65 T J = 25 C t f Fall time 68 t d(on) Turn-On delay time 11 I C = 12A, V CC = 196V t r Rise time 14 ns R G = 1Ω, L=2μH, L S = 15nH t d(off) Turn-Off delay time 86 T J = 15 C t f Fall time 19 t st Shoot Through Blocking Time 1 ns V CC = 24V, V GE = 15V, R G = 5.1Ω L = 22nH, C=.2μF, V GE = 15V 48 E PULSE Energy per Pulse μj V CC = 24V, R G = 5.1Ω, T J = 25 C 57 L = 22nH, C=.2μF, V GE = 15V V CC = 24V, R G = 5.1Ω, T J = 1 C ESD Human Body Model Class 1C (Per JEDEC standard JESD22-A114) Machine Model Class B (Per EIA/JEDEC standard EIA/JESD22-A115) C ies Input Capacitance 88 V GE = V C oes Output Capacitance 47 pf V CE = 3V C res Reverse Transfer Capacitance 26 ƒ = 1.MHz L C Internal Collector Inductance 4.5 Between lead, nh 6mm (.25in.) L E Internal Emitter Inductance 7.5 from package and center of die contact Notes: Half sine wave with duty cycle =.5, ton=2μsec. R θ is measured at T J of approximately 9 C. ƒ Pulse width 4μs; duty cycle 2%. 2

3 I CE (A) I CE (A) I CE (A) I CE (A) I CE (A) 2 16 V GE = 18V V GE = 15V V GE = 12V V GE = 1V 2 16 V GE = 18V V GE = 15V V GE = 12V V GE = 1V 12 V GE = 8.V V GE = 6.V 12 V GE = 8.V V GE = 6.V Fig 1. Typical Output 25 C Fig 2. Typical Output 75 C V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V V GE = 18V V GE = 15V V GE = 12V V GE = 1V V GE = 8.V V GE = 6.V Fig 3. Typical Output 125 C Fig 4. Typical Output 15 C 2 14 I C = 12A T J = 25 C T J = 15 C 8 6 T J = 25 C T J = 15 C V GE (V) V GE (V) Fig 5. Typical Transfer Characteristics Fig 6. V CE(ON) vs. Gate Voltage 3

4 Energy per Pulse (μj) I C (A) Energy per Pulse (μj) Energy per Pulse (μj) I C (A) Repetitive Peak Current (A) ton= 2μs Duty cycle =.5 Half Sine Wave T C ( C) Case Temperature ( C) Fig 7. Maximum Collector Current vs. Case Temperature Fig 8. Typical Repetitive Peak Current vs. Case Temperature V CC = 24V L = 22nH C = variable 1 C L = 22nH C =.4μF 1 C C C I C, Peak Collector Current (A) Fig 9. Typical E PULSE vs. Collector Current V CE, Collector-to-Emitter Voltage (V) Fig 1. Typical E PULSE vs. Collector-to-Emitter Voltage V CC = 24V L = 22nH t = 1μs half sine C=.4μF 1 1 μs μs 1 C=.3μF 1ms C=.2μF T J, Temperature (ºC) Fig 11. E PULSE vs. Temperature Fig 12. Forrward Bias Safe Operating Area 4

5 Capacitance (pf) V GE, Gate-to-Source Voltage (V) 1 2 I D = 12A 1 Cies V DS = 24V V DS = 15V V DS = 6V 8 1 Coes 4 1 Cres Q G Total Gate Charge (nc) Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage 1 1 D =.5 Thermal Response ( Z thjc ) SINGLE PULSE ( THERMAL RESPONSE ) τj τj τ1 τ1 Ci= τi/ri Ci i/ri R 1 R 2 R 3 R 1 R 2 R 3 τ 2 τ 3 τ 2 τ 3 1E-6 1E t 1, Rectangular Pulse Duration (sec) R4 R4 τ4 τ4 τc τ Ri ( C/W) τι (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5

6 A RG DRIVER C PULSE A L VCC PULSE B B RG Ipulse DUT t ST Fig 16a. t st and E PULSE Test Circuit Fig 16b. t st Test Waveforms V CE Energy I C Current 1K DUT L VCC Fig 16c. E PULSE Test Waveforms Fig Gate Charge Circuit (turn-off) 6

7 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR12 WITH ASSEMBLY LOT CODE 1234 ASSEMBLED ON WW 16, 21 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFR12 116A PART NUMBER DATE CODE YEAR 1 = 21 WEEK 16 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S EMB L Y LOT CODE IRFR PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO THE CONSUMER LEVEL (OPTIONAL) YEAR 1 = 21 WEEK 16 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at 7

8 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 (.641 ) 15.7 (.619 ) 16.3 (.641 ) 15.7 (.619 ) 12.1 (.476 ) 11.9 (.469 ) FEED DIRECTION 8.1 (.318 ) 7.9 (.312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA INCH NOTES : 1. OUTLINE CONFORMS TO EIA mm Note: For the most current drawing please refer to IR website at Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (31) TAC Fax: (31) Visit us at for sales contact information.3/21 8