Absolute Maximum Ratings Parameter Max. Units
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1 PD PDP Switch IRGP45 Features Key parameters optimized for PDP sustain & Energy recovery applications 4A continuous collector current rating reduces component count High pulse current rating makes it ideal for capacitive load circuits Low temperature co-efficient of V CE (ON) ensures reduced power dissipation at operating junction temperatures Reverse voltage avalanche rating improves the robustness in sustain driver application Short fall & rise times for fast switching G C E n-channel V CES = 25V V CE(on) typ. GE = 5V, I C = 3A Description This IGBT is specifically designed for sustain & energy recovery application in plasma display panels. This IGBT features low V CE (ON) and fast switching times to improve circuit efficiency and reliability. Low temperature co-efficient of V CE (ON) makes this IGBT an ideal device for PDP sustain driver application. TO-247AC Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 25 V I T C = 25 C Continuous Collector Current 4* A I T C = C Continuous Collector Current 56 I CM Pulse Collector CurrentÃc 28 I LM Clamped Inductive Load current d 29 V GE Gate-to-Emitter Voltage ±2 V E ARV Reverse Voltage Avalanche Energy e 24 mj P T C = 25 C Maximum Power Dissipation 33 W P T C = C Maximum Power Dissipation 3 T J Operating Junction and -55 to +5 T STG Storage Temperature Range C Solder Temperature Range, for sec. 3 (.63 in. (.6mm) from case) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT.38 C/W R θcs Case-to-Sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz.) *Package limited to 6A. 7/5/4
2 IRGP45 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 25 V V GE = V, I C = 25µA V (BR)ECS Emitter-to-Collector Breakdown Voltage f 8 V V GE = V, I C =.A V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 8.2 mv/ C V GE = V, I C = ma.64.9 I C = 3A V CE(on) Collector-to-Emitter Saturation Voltage 2.4 V I C = 56A V GE = 5V 2.6 I C = 4A, T J = 5 C See Fig. 2, 5 V GE(th) Gate Threshold Voltage V CE = V GE, I C = 25µA V GE(th) / T J Threshold Voltage temp. coefficient - mv/ C V CE = V GE, I C =.25mA gfe Forward Transconductance g 34 5 S V CE = V, I C = 56A I CES Zero Gate Voltage Collector Current 25 V GE = V, V CE = 25V 2. µa V GE = V, V CE = V 5 V GE = V, V CE = 25V, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 56A Q ge Gate-to-Emitter Charge (turn-on) nc V CC = 2V See Fig. 8 Q gc Gate-to-Collector Charge (turn-on) 78 2 V GE = 5V t d(on) Turn-On delay time 37 T J = 25 C t r Rise time 35 ns I C = 3A, V CC = 8V t d(off) Turn-Off delay time 2 8 V GE = 5V, R G = 5.Ω t f Fall time Energy losses include "tail" E on Turn-On Switching Loss 45 See Fig. 9,, 4 E off Turn-Off Switching Loss 25 µj E TS Total Switching Loss 7 t d(on) Turn-On delay time 35 T J = 5 C t r Rise time 35 ns I C = 3A, V CC = 8V t d(off) Turn-Off delay time 3 V GE = 5V, R G = 5.Ω t f Fall time 2 Energy losses include "tail" E TS Total Switching Loss 28 µj See Fig., 4 L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 465 V GE = V C oes Output Capacitance 48 pf V CC = 3V, See Fig. 7 C res Reverse Transfer Capacitance 92 f =.MHz Notes: Repetitive rating; V GE = 2V, pulse width limited by max. junction temperature. ( See fig. 3b ) V CC = 8%(V CES ), V GE = 2V, L = µh, R G = 5.Ω, (See fig. 3a). ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 2.5ms; duty factor.%. Pulse width 5.µs, single shot. 2
3 I C, Collector-to-Emitter Current (A) Load Current ( A ) I C, Collector-to-Emitter Current (A) IRGP Triangular wave: Clamp voltage: 8% of rated For both: Duty cycle : 5% Tj = 25 C Tsink = 9 C Gate drive as specified Power Dissipation = 73W 6 4 Square wave: 6% of rated voltage 2 Ideal diodes. f, Frequency ( khz ) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) T J = 5 C T J = 5 C T J = 25 C T J = 25 C V GE = 5V 2µs PULSE WIDTH.. V CE, Collecto-to-Emitter Voltage (V).. V CC = 5V 2µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3
4 Maximum DC Collector Current (A) V CE, Collector-to Emitter Voltage (V) IRGP45 2 LIMITED BY PACKAGE 4. V GE = 5V 8µs PULSE WIDTH 8 3. I C = 2A I C = 56A I C = 28A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response ( Z thjc ).... D = R R 2 R 3 R R 2 R 3 τ J τ J τ τ τ 2 τ 3 τ 2 τ 3 Ci= τi/ri Ci i/ri SINGLE PULSE ( THERMAL RESPONSE ) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc + Tc E-6 E t, Rectangular Pulse Duration (sec) τ C τ Ri ( C/W) τi (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4
5 Total Swiching Losses (µj) Total Swiching Losses (µj) Capacitance (pf) V GE, Gate-to-Emitter Voltage (V) IRGP45 V GS = V, f = MHZ C ies = C ge + C gd, C ce SHORTED C res = C gc C oes = C ce + C gc V CES = 2V I C = 56A Cies 8 Coes 6 4 Cres V CE, Collector-toEmitter-Voltage(V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CE = 2V V GE = 5V T J = 25 C I C = 56A R G = 5.ΩÃ V GE = 5V I C = 2A I C = 56A I C = 28A R G, Gate Resistance (Ω) T J, Juntion Temperature ( C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5
6 Total Swiching Losses (µj) I C, Collector-to-Emitter Current (A) IRGP R G = 5.Ω T J = 5 C V CE = 2V V GE = 2V T J = 25 4 V GE = 5V 3 2 SAFE OPERATING AREA I C, Collecto-to-Emitter (A) V DS, Drain-to-Source Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA 6
7 IRGP45 5V c V L V * C D.U.T. d - 48V 48µF 96V R L = 48V 4 X I C@25 C * Driver same type as D.U.T.; Vc = 8% of Vce(max) * Note: Due to the 5V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit I C 5V V c L Driver* d V C D.U.T. e Fig. 4a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 48V c d 9% e % V C 9% t d(off) Fig. 4b - Switching Loss Waveforms I C 5% % t d(on) tr E on t f E off t=5µs E ts = (E on +E off ) 7
8 IRGP45 TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information (;$3/( 7+,6,6$,5)3( :,7+$66(%/< /27&2'( $66(%/('2::,7+($66(%/</,(+ Note: "P" in assembly line position indicates "Lead-Free",7(5$7,2$/ 5(&7,),(5 /2*2 $66(%/<,5)3( Ã+ ÃÃÃÃÃÃÃÃÃÃÃ 3$578%(5 '$7(&2'( <($5 /27&2'( :((. /,(+ TO-247AC package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.6/4 8
9 Note: For the most current drawings please refer to the IR website at:
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More information5.0V 5.0V. 20µs PULSE WIDTH Tj = 25 C. Tj = 150 C. V DS, Drain-to-Source Voltage (V) T J = 150 C 1.5. V GS, Gate-to-Source Voltage (V)
9MT050XF "FULL-BRIDGE" FREDFET MTP HEXFET Power MOSFET Features Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationAUTOMOTIVE MOSFET. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop.4vtyp. @ A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives,
More informationTO-247AC Absolute Maximum Ratings
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to µs @ 25 C, V
More informationAUTOMOTIVE MOSFET TO-220AB IRF I DM. 890 P C = 25 C Power Dissipation 330 Linear Derating Factor. 2.2 V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More informationIRG4BC20FPbF Fast Speed IGBT
PD - 95742 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20FPbF Fast Speed IGBT Features C Fast: Optimized fr medium perating frequencies ( -5 khz in hard switching, >20 khz in resnant mde). Generatin 4 IGBT
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Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free S Benefits l Very Low R DS(on) at 4.5V l Low Gate Charge l Fully Characterized
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche
More informationIRFR3709ZPbF IRFU3709ZPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationBattery charger DC-DC converter G C E Gate Collector Emitter. Base part number Package Type Standard Pack Complete Part Number
AUTOMOTIVE GRADE AUIRGP462D AUIRGP462D-E INSULATED GATE BIPOLAR TRANSISTOR WITH C ULTRAFAST SOFT RECOVERY DIODE V CES = 6V Features Low V CE (on) Trench IGBT Technology I C(Nominal) = 24A Low Switching
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationT J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units V (BR)DSS DraintoSource Breakdown Voltage 24 V V (BR)DSS / T J
PD 97263B HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G
More informationC Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )
PD 9470F IRG4P50U INSULTED GTE BIPOLR TRNSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
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IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRIMARY CHARACTERISTICS OUTPUT CURRENT IN A TYPICAL 20 khz MOTOR DRIVE V CES 600 V I RMS per phase (3. kw total) with T C = 90 C A RMS T J 25
More informationFeatures TO-264 E. Symbol Description SGL50N60RUFD Units V CES Collector-Emitter Voltage 600 V V GES Gate-Emitter Voltage ± 20 V Collector T
Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationIRG4BC20KD. Short Circuit Rated UltraFast IGBT V CES = 600V. V CE(on) typ. = 2.27V. Thermal Resistance. GE = 15V, I C = 9.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5. khz, and Short Circuit Rated to µs @ 25 C, V GE
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
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PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET Power MOSFET V DSS R DSon) max Qg 30V 6.3m: 7nC Benefits l l l Low R DSon)
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Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationIRLS3036PbF IRLSL3036PbF HEXFET Power MOSFET
Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D S PD -97358
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