Insulated Gate Bipolar Transistor Ultralow V CE(on), 250 A

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1 Insulated Gate Bipolar Transistor Ultralow V CE(on), 50 A VS-GA50SA60S PRODUCT SUMMARY V CES V CE(on) (typical) at 00 A, 5 C I C at T C = 90 C () Speed Package Circuit SOT V.33 V 50 A DC to khz SOT-7 Single switch no diode Note () Maximum collector current admitted 00 A to do not exceed the maximum temperature of terminals FEATURES Standard: optimized for minimum saturation voltage and low speed Lowest conduction losses available Fully isolated package (500 V AC ) Very low internal inductance (5 nh typical) Industry standard outline Designed and qualified for industrial level UL approved file E78996 Material categorization: for definitions of compliance please see BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, TIG welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-7 packages ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 600 V Continuous collector current I () T C = 5 C 400 C T C = 90 C 50 Repetitive rating; V A Pulsed collector current I GE = 0 V, pulse width limited by CM 400 maximum junction temperature Clamped Inductive load current I LM V CC = 80 % (V CES ), V GE = 0 V, L = 0 μh, R g = Gate to emitter voltage V GE ± 0 V T C = 5 C 96 Power dissipation P D T C = 90 C 46 W Isolation voltage V ISOL Any terminal to case, t = min 500 V Note () Maximum collector current admitted 00 A to do not exceed the maximum temperature of terminals THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg C Thermal resistance junction to case R thjc Thermal resistance case to heatsink R thcs Flat, greased surface C/W Weight g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink (.5) Nm (lbf.in) Case style SOT-7 Revision: 0-May-6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-GA50SA60S ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V (BR)CES V GE = 0 V, I C = ma Emitter to collector breakdown voltage V (BR)ECS () V GE = 0 V, I C =.0 A Collector to emitter voltage Notes () Pulse width 80 μs; duty factor 0. % V CE(on) I C = 00 A I C = 00 A I C = 00 A, T J = 5 C V GE = 5 V I C = 00 A, T J = 5 C I C = 00 A, T J = 50 C I C = 00 A, T J = 50 C V GE(th) V CE = V GE, I C = 50 μa Gate threshold voltage V CE = V GE, I C = 50 μa, T J = 5 C Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma, 5 C to 5 C mv/ C Collector to emitter leakage current I CES V GE = 0 V, V CE = 600 V, T J = 5 C V GE = 0 V, V CE = 600 V, T J = 50 C ma V GE = 0 V, V CE = 600 V μa Gate to emitter leakage current I GES V GE = ± 0 V - - ± 50 na V SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise specified) switching loss PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g Gate-to-emitter charge (turn-on) Q ge I C = 00 A, V CC = 600 V, V GE = 5 V nc Gate-to-collector charge (turn-on) Q gc Turn-on switching loss E on Turn-off switching loss E off T J = 5 C mj Total switching loss E tot I C = 00 A V CC = 480 V Turn-on delay time t d(on) V GE = 5 V Rise time t r R g = Turn-off delay time t d(off) L = 500 μh Energy ns Fall time t f losses Turn-on E on include tail and diode Turn-off switching loss E off TJ = 5 C recovery mj I C = 00 A Diode used Total switching loss E tot V CC = 480 V 60APH Turn-on delay time t d(on) V GE = 5 V Rise time t r R g = 5.0 L = 500 μh Turn-off delay time t d(off) ns Fall time t f Between lead and Internal emitter inductance L E center of die contact nh Input capacitance C ies Output capacitance C oes V GE = 0 V, V CC = 30 V, f =.0 MHz pf Reverse transfer capacitance C res Revision: 0-May-6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-GA50SA60S 60 0 Allowable Case Temperature ( C) I CES - Collector Current (ma) T J = 50 C 0. T J = 5 C 0.0 T J = 5 C I C - Continuous Collector Current (A) Fig. - Maximum DC IGBT Collector Current vs. Case Temperature V CE - Collector-to-Emitter Voltage (V) Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current I C - Collector to Emitter Current (A) 000 V GE = 5 V 00 T J = 50 C T J = 5 C 0 T J = 5 C V CE - Collector to Emitter Voltage (V) Fig. - Typical Collector to Emitter Current Output Characteristics V GEth - Threshold Voltage (V) T J = 5 C T J = 5 C I C - Continuous Collector Current (ma) Fig. 5 - Typical IGBT Threshold Voltage I C - Collector to Emitter Current (A) T J = 50 C T J = 5 C 0 T J = 5 C V CE - Collector-to-Emitter Voltage (V).5.5 Ic = 400 A Ic = 00 A Ic = 00 A V GE - Gate to Emitter Voltage (V) T J - Junction Temperature ( C) Fig. 3 - Typical IGBT Transfer Characteristics Fig. 6 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V Revision: 0-May-6 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-GA50SA60S Switching Energy (mj) 00 0 E off E on Energy Losses (mj) 00 0 E off E on I C - Collector Current (A) R g (Ω) Fig. 7 - Typical IGBT Energy Losses vs. I C, T J = 5 C, V CC = 480 V, V GE = 5 V, L = 500 μh, R g = 5, Diode used: 60APH06 Fig. 9 - Typical IGBT Energy Losses vs. R g, T J = 5 C, I C = 00 A, V CC = 480 V, V GE = 5 V, L = 500 μh, Diode used: 60APH06 0 t f t d(off) Switching Time (μs) 0. t d(on) t r Switching Time (μs) 0. t f t r t d(on) t d(off) I C - Collector Current (A) R g (Ω) Fig. 8 - Typical IGBT Switching Time vs. I C, T J = 5 C, V CC = 480 V, V GE = 5 V, L = 500 μh, R g = 5, Diode used: 60APH06 Fig. 0 - Typical IGBT Switching Time vs. R g, T J = 5 C, I C = 00 A, V CC = 480 V, V GE = 5 V, L = 500 μh, Diode used: 60APH06 Z thjc - Thermal Impedance Junction to Case ( C/W) DC Rectangular Pulse Duration (s) Fig. - Maximum Thermal Impedance Z thjc Characteristics Revision: 0-May-6 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-GA50SA60S Load Current (A) Square wave: 60 % of rated voltage I For both: Duty cycle: 50 % T J = 5 C T sink = 90 C Gate drive as specified Power dissipation = 40 W Triangular wave: I Clamp voltage: 80 % of rated 50 Ideal diodes f - Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of Fundamental) C - Capacitance (pf) C ies C res C oes V GE = 0 V, f = MHz C ies = C ge + C gc, C ce shorted C res = C gc C oes = C ce + C gc V CE - Collector to Emitter Voltage (V) Fig. 3 - Typical Capacitance vs. Collector to Emitter Voltage VGE - Gate to Emitter Voltage (V) V CC = 400 V I C = 00 A Q G - Total Gate Charge (nc) Fig. 4 - Typical Gate Charge vs. Gate to Emitter Voltage 000 I C - Collector Current (A) 00 0 V GE = 0 V T J = 5 C Safe operating area V CE - Collector to Emitter Voltage (V) Fig. 5 - Turn-Off SOA Revision: 0-May-6 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 VS-GA50SA60S 50 V 000 V L V C * D.U.T. 0 V to 480 V 480 µf 960 V R L = 480 V 4 x I C at 5 C * Driver same type as D.U.T.; V C = 80 % of V CE (max) Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain rated I d Fig. 6a - Clamped Inductive Load Test Circuit Fig. 6b - Pulsed Collector Current Test Circuit I C Driver* L V C D.U.T. 50 V 000 V 3 * Driver same type as D.U.T., V C = 480 V Fig. 7a - Switching Lost Test Circuit 90 % 3 0 % V C 90 % t d (off) I C 0 % 5 % t r t f t d (on) t = 5 µs E on E off E ts = (E on + E off ) Fig. 7b - Switching Loss Waveforms Revision: 0-May-6 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 VS-GA50SA60S ORDERING INFORMATION TABLE Device code VS- G A 50 S A 60 S product - Insulated Gate Bipolar Transistor (IGBT) - Gen 4, IGBT silicon - Current rating (50 = 50 A) - Circuit configuration (S = single switch, without antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating (60 = 600 V) - Speed/type (S = standard speed) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Lead Assignment 4 3 Single switch, no antiparallel diode S (G), 4 (E) N-channel Dimensions Packaging information LINKS TO RELATED DOCUMENTS Revision: 0-May-6 7 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

8 Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø 4.0 (0.6) Ø 4.30 (0.69) (.508) (.488) -A- 4 x M4 nuts.50 (0.49) 3.00 (0.5) 6.5 (0.46) 6.50 (0.56) 5.70 (.0) 4.70 (0.97) -B (0.93) 7.60 (0.99) (.00) 9.80 (.73) 4.90 (0.587) 5.0 (0.598) R full.0 (0.083).0 (0.087) 3.50 (.40) 3.0 (.64) 8.30 (0.37) 4 x 7.70 (0.303) 0.5 (0.00) M C A M B M.0 (0.087).90 (0.075) 4.0 (0.6) 4.50 (0.77) -C- 0.3 (0.005).30 (0.484).70 (0.460) 5.00 (0.984) 5.50 (.004) Note Controlling dimension: millimeter Revision: 0-Aug- Document Number: 9543 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 07 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-7 Document Number: 9000

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