Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A

Transcription

1 Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), A VS-GASA6UP SOT-7 PRIMARY CHARACTERISTICS V CES 6 V V CE(on) (typical).9 V V GE 5 V I C A Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single switch no diode FEATURES Ultrafast: optimized for minimum saturation voltage and speed up to 3 khz in hard switching, > khz in resonant mode Very low conduction and switching losses Fully isolate package (5 V AC/RMS ) Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Lower overall losses available at frequencies = khz Easy to assemble and parallel Direct mounting to heatsink Lower EMI, requires less snubbing Plug-in compatible with other SOT-7 packages ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter breakdown voltage V CES 6 V T C = 5 C Continuous collector current I C T C = C Pulsed collector current I CM 4 A Clamped inductive load current I LM V CC = 8 % (V CES ), V GE = V, L = μh, R g =., see fig. 3a 4 Gate to emitter voltage V GE ± V Repetitive rating; pulse width limited by Reverse voltage avalanche energy E ARV maximum junction temperature 6 mj RMS isolation voltage V ISOL Any terminal to case, t = min 5 V T C = 5 C 5 Maximum power dissipation P D T C = C W Operating junction and storage temperature range T J, T Stg -55 to +5 C Mounting torque 6-3 or M3 screw.3 () Nm (lbf.in) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg Thermal resistance, junction to case R thjc C/W Thermal resistance case to heatsink R thcs Flat, greased, surface Weight g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink (5.9) Nm (lbf.in) Case style SOT-7 Revision: 3-Oct-7 Document Number: 94364

2 VS-GASA6UP ELECTRICAL SPECIFICATIONS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V (BR)CES V GE = V, I C = 5 μa V GE = V, I C =. A V Emitter to collector breakdown voltage V (BR)ECS Pulse width 8 μs; duty factor. % Temperature coefficient of breakdown voltage V (BR)CES / T J V GE = V, I C = ma V/ C I C = A V GE = 5 V Collector to emitter saturation voltage V CE(on) I C = A See fig., 5 V I C = A, T J = 5 C Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C =. ma mv/ C V CE = V, I C = A Forward transconductance g fe Pulse width 5. μs, single shot S V GE = V, V CE = 6 V - -. Zero gate voltage collector current I CES ma V GE = V, V CE = 6 V, T J = 5 C - - Gate to emitter leakage current I GES V GE = ± V - - ± 5 na SWITCHING CHARACTERISTICS (T J = 5 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g I C = A - 77 Gate-emitter charge (turn-on) Q ge V CC = 4 V - 5 nc Gate-collector charge (turn-on) Q gc V GE = 5 V; See fig Turn-on delay time t d(on) TJ = 5 C Rise time t r I C = A Turn-off delay time t d(off) V CC = 48 V - 3 ns Fall time t f V GE = 5 V Turn-on switching loss E on R g = Turn-off switching loss E off Energy losses include tail mj Total switching loss E ts See fig. 9,, Turn-on delay time t d(on) TJ = 5 C Rise time t r I C = A, V CC = 48 V Turn-off delay time t d(off) V GE = 5 V, R g = ns Fall time t f Energy losses include tail Total switching loss E ts See fig.,, mj Internal emitter inductance L E Measured 5 mm from package nh Input capacitance C ies VGE = V Output capacitance C oes V CC = 3 V - - pf Reverse transfer capacitance C res f =. MHz; See fig Revision: 3-Oct-7 Document Number: 94364

3 VS-GASA6UP Load Current (A) 6 8 Triangular wave: Clamp voltage: 8 % of rated Square wave: I 6 % of rated voltage I For both: Duty cycle: 5 % T J = 5 C T sink = 9 C Gate drive as specified Power dissipation = 4 W 4 Ideal diodes. f - Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of Fundamental) I C - Collector to Emitter Current (A) T J = 5 C T J = 5 C V GE = 5 V µs pulse width Maximum DC Collector Current (A) V CE - Collector to Emitter Voltage (V) T C - Case Temperature ( C) Fig. - Typical Output Characteristics Fig. 4 - Maximum Collector Current vs. Case Temperature I C - Collector to Emitter Current (A) T J = 5 C T J = 5 C V GE = 5 V 5 µs pulse width V CE - Collector to Emitter Voltage (V) 3 V GE = 5 V 8 µs pulse width I C = 4 A I C = A I C = A V GE - Gate to Emitter Voltage (V) T J - Junction Temperature ( C) Fig. 3 - Typical Transfer Characteristics Fig. 5 - Typical Collector to Emitter Voltage vs. Junction Temperature Revision: 3-Oct-7 3 Document Number: 94364

4 VS-GASA6UP Z thjc - Thermal Response.. D =.5 D =. D =. D =.5 D =. D =. Single pulse (thermal resistance) P DM Notes:. Duty factor D = t /t. Peak T J = P DM x Z thjc + T C t t t - Rectangular Pulse Duration (s) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case C - Capacitance (pf) C ies C res C oes V GE = V, f = MHz C ies = C ge + C gc, C ce shorted C res = C gc C oes = C ce + C gc Total Switching Losses (mj) V CC = 48 V V GE = 5 V T J = 5 C I C = A V CE - Collector to Emitter Voltage (V) R G - Gate Resistance (Ω) Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 9 - Typical Switching Losses vs. Gate Resistance VGE - Gate to Emitter Voltage (V) V CC = 4 V I C = A Total Switching Losses (mj) I C = 35 A I C = A I C = A R G =. Ω V GE = 5 V V CC = 48 V Q G - Total Gate Charge (nc) T J - Junction Temperature ( C) Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage Fig. - Typical Switching Losses vs. Junction Temperature Revision: 3-Oct-7 4 Document Number: 94364

5 VS-GASA6UP Total Switching Losses (mj) I C - Collector Current (A) R G =. Ω T J = 5 C V CC = 48 V V GE = 5 V 3 4 I C - Collector Current (A) Fig. - Typical Switching Losses vs. Collector Current V GE = V T J = 5 C Safe operating area V CE - Collector to Emitter Voltage (V) Fig. - Turn-Off SOA 5 V 5 V V Fig. 3a - Clamped Inductive Load Test Circuit Fig. 3b - Pulsed Collector Current Test Circuit Fig. 4a - Switching Loss Test Circuit L V C * D.U.T. * Driver same type as D.U.T.; V C = 8 % of V CE (max) Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain rated I d V to 48 V 48 µf 96 V V Driver* L * Driver same type as D.U.T., V C = 48 V R L = V C 48 V 4 x I C at 5 C I C D.U.T. 3 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E on E off E ts = (E on + E off ) Fig. 4b - Switching Loss Waveforms Revision: 3-Oct-7 5 Document Number: 94364

6 VS-GASA6UP ORDERING INFORMATION TABLE Device code VS- G A S A 6 U P product - Insulated gate bipolar transistor (IGBT) 3 - Generation 4, IGBT silicon, DBC construction 4 - Current rating ( = A) 5 - Single switch no diode 6 - SOT Voltage rating (6 = 6 V) 8 - Speed/type (U = ultrafast) 9 - None = standard production P = lead (Pb)-free CIRCUIT CONFIGURATION 3 (C) Lead assignment E C (G) 4 3 E G, 4 (E) n-channel Dimensions Packaging information LINKS TO RELATED DOCUMENTS Revision: 3-Oct-7 6 Document Number: 94364

7 Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts.5 (.49) 3. (.5) 6.5 (.46) 6.5 (.56) 5.7 (.) 4.7 (.97) -B (.93) 7.6 (.99) 3.5 (.) 9.8 (.73) 4.9 (.587) 5. (.598) R full. (.83). (.87) 3.5 (.4) 3. (.64) 8.3 (.37) 4 x 7.7 (.33).5 (.) M C A M B M. (.87).9 (.75) 4. (.6) 4.5 (.77) -C-.3 (.5).3 (.484).7 (.46) 5. (.984) 5.5 (.4) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 9543

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