n-channel D 2 Pak 1
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- Ronald Blankenship
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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc V CE (start),, V GE = 5V Combines low conduction losses with high switching speed tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free G C E n-channel PD A Short Circuit Rated UltraFast IGBT V CES = 600V V CE(on) typ. = GE = 5V, I C = 6A Benefits Latest generation 4 IGBTs offer highest power density motor controls possible HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products For hints see design tip D 2 Pak Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I T C = 25 C Continuous Collector Current 28 I T C = C Continuous Collector Current 6 I CM Pulsed Collector Current 56 A I LM Clamped Inductive Load Current 56 I T C = C Diode Continuous Forward Current 2 I FM Diode Maximum Forward Current 58 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 20 V P T C = 25 C Maximum Power Dissipation P T C = C Maximum Power Dissipation 42 W T J Operating Junction and -55 to +50 T STG Storage Temperature Range C Soldering Temperature, for sec. 300 (0.063 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case - IGBT.2 R θjc Junction-to-Case - Diode 2.5 R θcs Case-to-Sink, Flat, Greased Surface 0.5 C/W R θja Junction-to-Ambient ( PCB Mounted,steady-state) 40 Wt Weight.44 g 02/08/
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 V V GE = 0V, I C = 250µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.54 V/ C V GE = 0V, I C =.0mA V CE(on) Collector-to-Emitter Saturation Voltage I C = 6A V GE = 5V 2.88 I C = 28A See Fig. 2, V I C = 6A, T J = 50 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -2 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance S V CE = V, I C = 6A I CES Zero Gate Voltage Collector Current 250 V GE = 0V, V CE = 600V µa 2500 V GE = 0V, V CE = 600V, T J = 50 C V FM Diode Forward Voltage Drop.4.7 I C = 2A See Fig. 3 V.3.6 I C = 2A, T J = 50 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±20V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 67 I C = 6A Q ge Gate - Emitter Charge (turn-on) 6 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) V GE = 5V t d(on) Turn-On Delay Time 60 t r Rise Time 42 T J = 25 C ns t d(off) Turn-Off Delay Time I C = 6A, V CC = 480V t f Fall Time V GE = 5V, R G = 23Ω E on Turn-On Switching Loss 0.60 Energy losses include "tail" E off Turn-Off Switching Loss 0.58 mj and diode reverse recovery E ts Total Switching Loss.8.6 See Fig. 9,,4 t sc Short Circuit Withstand Time µs V CC = 360V, V GE = 5V, R G = Ω, V CPK < 500V t d(on) Turn-On Delay Time 58 T J = 50 C, See Fig.,4 t r Rise Time 42 I C = 6A, V CC = 480V ns t d(off) Turn-Off Delay Time 2 V GE = 5V, R G = 23Ω t f Fall Time 60 Energy losses include "tail" E ts Total Switching Loss.69 mj and diode reverse recovery L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 920 V GE = 0V C oes Output Capacitance pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 27 ƒ =.0MHz t rr Diode Reverse Recovery Time ns T J = 25 C See Fig I F = 2A I rr Diode Peak Reverse Recovery Current T J = 25 C See Fig. A V R = 200V Q rr Diode Reverse Recovery Charge T J = 25 C See Fig. nc di/dt = 200Aµs di (rec)m /dt Diode Peak Rate of Fall of Recovery 80 T J = 25 C See Fig. A/µs During t b
3 2.5 For both: LOAD CURRENT (A) Square wave: 60% of rated voltage I Duty cycle: 50% T sink = 90 C 55 C Gate drive as specified Power Dissipation =.8W 0.5 Ideal diodes f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T = 25 o J C T = 50 o J C V GE = 5V 20µs PULSE WIDTH 0. V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) o T J = 50 C T = 25 o J C V CC = 50V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3
4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) V GE = 5V 80 us PULSE WIDTH I C = I C = I C = 32 A 6 A 8.0A 8 A T C, Case Temperature ( C) TT J, ( J, Junction Temperature ( C C) ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) 0. D = t2 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t Peak T J = PDM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4
5 C, Capacitance (pf) VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 400V I C = 6A C res 0 V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 480V V GE = 5V T = 25 J C I C = 6A Total Switching Losses (mj) R G = Ohm 23Ω V GE = 5V V CC = 480V I C = 32A I C = I C = 6A 8.0A 8A R R G G,, Gate Resistance ((Ohm) Ω ) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5
6 Total Switching Losses (mj) R G = 23Ω Ohm T J = 50 C V CC = 480V V GE = 5V I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) V GE = 20V oc SAFE OPERATING AREA 0 V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J = 50 C T J = 25 C Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6
7 60 V R = 200V T J = 25 C V R = 200V T J = 25 C 20 t rr - (ns) 80 I F = 24A I F = 2A I = 6.0A F I IRRM - (A) I F = 6.0A I F = 2A I = 24A F di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt 0 di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di f /dt 600 V R = 200V T J = 25 C 00 V R = 200V T J = 25 C Q RR - (nc) I F = 2A I F = 24A di(rec)m/dt - (A/µs) 0 I F = 6.0A I F = 2A I F = 6.0A I F = 24A 0 0 di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt 0 di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt 7
8 Same type device as D.U.T. 80% of Vce 430µF D.U.T. V ge % 90% VC 90% t d(off) Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f I 5% % C t d(on) tr E on t f E off t=5µs E ts = (E on +E off ) Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx % Ic Vcc td(on) t Vce tr 90% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8
9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t0 t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit R L = VCC ICM 0V L V * c D.U.T. 0 - VCC 480µF 50V 6000µF V Pulsed Collector Current Test Circuit Figure 9. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit 9
10 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information 7+,6,6$,5)6:,7+ /27&2'( $66(0%/('2::,7+($66(0%/</,(/ RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH OR,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( )6 3$5780%(5 '$7(&2'( <($5 :((. /,(/,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( )6 3$5780%(5 '$7(&2'( 3 '(6,*$7(6/($')5(( 352'8&7237,2$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at
11 Notes: Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20) V CC =80%(V CES ), V GE =20V, L=µH, R G = 23Ω (figure 9) ƒpulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. When mounted on " square PCB (FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #AN-994. D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION TRL.85 (.073).65 (.065).90 (.429).70 (.42).60 (.457).40 (.449) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 5.42 (.609) 5.22 (.60) (.957) (.94) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MAX (2.362) MIN. NOTES :. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.039) (.96) (.97) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.02/20
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Short Circuit Rated IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD
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INSULATED GATE BIPOLAR TRANSISTOR PD - 9.780 UltraFast IGBT Features Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency
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Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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INSULATED GATE BIPOLAR TRANSISTOR PD - 9.692 IRGP4S Standard Speed IGBT Features Switching-loss rating includes all "tail" losses Optimized for line frequency operation (to 4Hz) See Fig. for urrent vs.
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l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationFull Bridge IGBT MTP (Warp Speed IGBT), 50 A
Full Bridge IGBT MTP (Warp Speed IGBT), 50 A MTP PRIMARY CHARACTERISTICS V CES 600 V DC 69 A V CE(on) 2.22 V Speed 8 khz to 30 khz Package MTP Circuit configuration Full bridge FEATURES Gen 4 warp speed
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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
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Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
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PD - 95742 INSULATED GATE BIPOLAR TRANSISTOR IRG4BC20FPbF Fast Speed IGBT Features C Fast: Optimized fr medium perating frequencies ( -5 khz in hard switching, >20 khz in resnant mde). Generatin 4 IGBT
More informationV DSS R DS(on) max I D
Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationSoldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
INSULATED GATE BIPOLAR TRANSISTOR PD - 9587 IRG4PH40UPbF Ultra Fast Speed IGBT Features UltraFast: Optimized fr high perating frequencies up t 40 khz in hard switching, >200 khz in resnant mde New IGBT
More informationE n-channel. Parameter Min. Typ. Max. Units
INSULTED GTE BIPOLR TRNSISTOR Features Short circuit rated - µs @ 25, Switching-loss rating includes all "tail" losses Optimized for high operating frequency (over 5kHz) See Fig. for urrent vs. Frequency
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
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Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters
More informationTO-220AB. IRF3205ZPbF. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationTO-220AB. IRF540ZPbF A I DM. 140 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits
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More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationIRLR8103VPbF. Absolute Maximum Ratings. Thermal Resistance PD A DEVICE CHARACTERISTICS. IRLR8103V 7.9 mω Q G Q SW Q OSS.
PD - 95093A IRLR803VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 00%
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed
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SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
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More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
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Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
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Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
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AOD5B5N 5V, 5A Alpha IGBT TM With soft and fast recovery anti-parallel diode General Description Latest Alpha IGBT (α IGBT) technology 5V breakdown voltage Very low turn-off switching loss with softness
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Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
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SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
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