n-channel D 2 Pak 1

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1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc V CE (start),, V GE = 5V Combines low conduction losses with high switching speed tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFRED TM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free G C E n-channel PD A Short Circuit Rated UltraFast IGBT V CES = 600V V CE(on) typ. = GE = 5V, I C = 6A Benefits Latest generation 4 IGBTs offer highest power density motor controls possible HEXFRED TM diodes optimized for performance with IGBTs. Minimized recovery characteristic reduce noise, EMI and switching losses This part replaces the IRGBC30KD2-S and IRGBC30MD2-S products For hints see design tip D 2 Pak Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I T C = 25 C Continuous Collector Current 28 I T C = C Continuous Collector Current 6 I CM Pulsed Collector Current 56 A I LM Clamped Inductive Load Current 56 I T C = C Diode Continuous Forward Current 2 I FM Diode Maximum Forward Current 58 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 20 V P T C = 25 C Maximum Power Dissipation P T C = C Maximum Power Dissipation 42 W T J Operating Junction and -55 to +50 T STG Storage Temperature Range C Soldering Temperature, for sec. 300 (0.063 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case - IGBT.2 R θjc Junction-to-Case - Diode 2.5 R θcs Case-to-Sink, Flat, Greased Surface 0.5 C/W R θja Junction-to-Ambient ( PCB Mounted,steady-state) 40 Wt Weight.44 g 02/08/

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 V V GE = 0V, I C = 250µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.54 V/ C V GE = 0V, I C =.0mA V CE(on) Collector-to-Emitter Saturation Voltage I C = 6A V GE = 5V 2.88 I C = 28A See Fig. 2, V I C = 6A, T J = 50 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -2 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance S V CE = V, I C = 6A I CES Zero Gate Voltage Collector Current 250 V GE = 0V, V CE = 600V µa 2500 V GE = 0V, V CE = 600V, T J = 50 C V FM Diode Forward Voltage Drop.4.7 I C = 2A See Fig. 3 V.3.6 I C = 2A, T J = 50 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±20V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 67 I C = 6A Q ge Gate - Emitter Charge (turn-on) 6 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) V GE = 5V t d(on) Turn-On Delay Time 60 t r Rise Time 42 T J = 25 C ns t d(off) Turn-Off Delay Time I C = 6A, V CC = 480V t f Fall Time V GE = 5V, R G = 23Ω E on Turn-On Switching Loss 0.60 Energy losses include "tail" E off Turn-Off Switching Loss 0.58 mj and diode reverse recovery E ts Total Switching Loss.8.6 See Fig. 9,,4 t sc Short Circuit Withstand Time µs V CC = 360V, V GE = 5V, R G = Ω, V CPK < 500V t d(on) Turn-On Delay Time 58 T J = 50 C, See Fig.,4 t r Rise Time 42 I C = 6A, V CC = 480V ns t d(off) Turn-Off Delay Time 2 V GE = 5V, R G = 23Ω t f Fall Time 60 Energy losses include "tail" E ts Total Switching Loss.69 mj and diode reverse recovery L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 920 V GE = 0V C oes Output Capacitance pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 27 ƒ =.0MHz t rr Diode Reverse Recovery Time ns T J = 25 C See Fig I F = 2A I rr Diode Peak Reverse Recovery Current T J = 25 C See Fig. A V R = 200V Q rr Diode Reverse Recovery Charge T J = 25 C See Fig. nc di/dt = 200Aµs di (rec)m /dt Diode Peak Rate of Fall of Recovery 80 T J = 25 C See Fig. A/µs During t b

3 2.5 For both: LOAD CURRENT (A) Square wave: 60% of rated voltage I Duty cycle: 50% T sink = 90 C 55 C Gate drive as specified Power Dissipation =.8W 0.5 Ideal diodes f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T = 25 o J C T = 50 o J C V GE = 5V 20µs PULSE WIDTH 0. V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) o T J = 50 C T = 25 o J C V CC = 50V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) V GE = 5V 80 us PULSE WIDTH I C = I C = I C = 32 A 6 A 8.0A 8 A T C, Case Temperature ( C) TT J, ( J, Junction Temperature ( C C) ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) 0. D = t2 0.0 SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D = t / t Peak T J = PDM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4

5 C, Capacitance (pf) VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 400V I C = 6A C res 0 V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 480V V GE = 5V T = 25 J C I C = 6A Total Switching Losses (mj) R G = Ohm 23Ω V GE = 5V V CC = 480V I C = 32A I C = I C = 6A 8.0A 8A R R G G,, Gate Resistance ((Ohm) Ω ) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5

6 Total Switching Losses (mj) R G = 23Ω Ohm T J = 50 C V CC = 480V V GE = 5V I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) V GE = 20V oc SAFE OPERATING AREA 0 V CE, Collector-to-Emitter Voltage (V) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J = 50 C T J = 25 C Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6

7 60 V R = 200V T J = 25 C V R = 200V T J = 25 C 20 t rr - (ns) 80 I F = 24A I F = 2A I = 6.0A F I IRRM - (A) I F = 6.0A I F = 2A I = 24A F di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt 0 di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di f /dt 600 V R = 200V T J = 25 C 00 V R = 200V T J = 25 C Q RR - (nc) I F = 2A I F = 24A di(rec)m/dt - (A/µs) 0 I F = 6.0A I F = 2A I F = 6.0A I F = 24A 0 0 di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt 0 di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt 7

8 Same type device as D.U.T. 80% of Vce 430µF D.U.T. V ge % 90% VC 90% t d(off) Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f I 5% % C t d(on) tr E on t f E off t=5µs E ts = (E on +E off ) Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx % Ic Vcc td(on) t Vce tr 90% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8

9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t0 t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit R L = VCC ICM 0V L V * c D.U.T. 0 - VCC 480µF 50V 6000µF V Pulsed Collector Current Test Circuit Figure 9. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit 9

10 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information 7+,6,6$,5)6:,7+ /27&2'( $66(0%/('2::,7+($66(0%/</,(/ RWH3LQDVVHPEO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH OR,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( )6 3$5780%(5 '$7(&2'( <($5 :((. /,(/,7(5$7,2$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( )6 3$5780%(5 '$7(&2'( 3 '(6,*$7(6/($')5(( 352'8&7237,2$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at

11 Notes: Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20) V CC =80%(V CES ), V GE =20V, L=µH, R G = 23Ω (figure 9) ƒpulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. When mounted on " square PCB (FR-4 or G- Material ). For recommended footprint and soldering techniques refer to application note #AN-994. D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR.60 (.063).50 (.059) 4. (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION TRL.85 (.073).65 (.065).90 (.429).70 (.42).60 (.457).40 (.449) 6. (.634) 5.90 (.626).75 (.069).25 (.049) 5.42 (.609) 5.22 (.60) (.957) (.94) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MAX (2.362) MIN. NOTES :. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (.039) (.96) (.97) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.02/20

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