C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )

Transcription

1 PD IRG4PF5WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Optimized for use in Welding and Switch-Mode Power Supply applications V CES = 9V Industry benchmark switching losses improve efficiency of all power supply topologies G V CE(on) typ. = 2.25V 5% reduction of Eoff parameter Low IGBT conduction losses Latest technology IGBT design offers tighter GE = 5V, 28A parameter distribution coupled with n-channel exceptional reliability IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to khz HEXFRED TM diodes optimized for performance with IGBTs. TO-247AC Minimized recovery characteristics reduce noise, EMI and switching losses Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 9 V I T C = 25 C Continuous Collector Current 5 I T C = C Continuous Collector Current 28 A I CM Pulsed Collector Current 24 I LM Clamped Inductive Load Current 24 I T C = C Diode Continuous Forward Current 6 I FM Diode Maximum Forward Current 24 V GE Gate-to-Emitter Voltage ± 2 V W T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Soldering Temperature, for seconds 3 (.63 in. (.6mm) from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT.64 R θjc Junction-to-Case - Diode.83 C/W R θcs Case-to-Sink, flat, greased surface.24 R θja Junction-to-Ambient, typical socket mount 4 Wt Weight 6 (.2) g (oz) P T C = 25 C Maximum Power Dissipation 2 P T C = C Maximum Power Dissipation 78

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 9 V V GE = V, 25µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage.295 V/ C V GE = V, 3.5mA V CE(on) Collector-to-Emitter Saturation Voltage A V GE = 5V 2.74 V 6A See Fig. 2, A, T J = 5 C V GE(th) Gate Threshold Voltage V CE = V GE, 25µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -3 mv/ C V CE = V GE, 25µA g fe Forward Transconductance S V CE = 5V, 28A I CES Zero Gate Voltage Collector Current 5 µa V GE = V, V CE = 9V 2. V GE = V, V CE = V, T J = 25 C 6.5 ma V GE = V, V CE = 9V, T J = 5 C V FM Diode Forward Voltage Drop V 6A See Fig A, T J = 5 C I GES Gate-to-Emitter Leakage Current ± na V GE = ±2V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) A Qge Gate - Emitter Charge (turn-on) 9 29 nc V CC = 4V See Fig. 8 Q gc Gate - Collector Charge (turn-on) 53 8 V GE = 5V t d(on) Turn-On Delay Time 7 T J = 25 C t r Rise Time 5 ns 28A, V CC = 72V t d(off) Turn-Off Delay Time 5 22 V GE = 5V, R G = 5.Ω t f Fall Time 7 Energy losses include "tail" and E on Turn-On Switching Loss 2.63 diode reverse recovery. E off Turn-Off Switching Loss.34 mj See Fig. 9,, 8 E ts Total Switching Loss t d(on) Turn-On Delay Time 69 T J = 5 C, See Fig., 8 t r Rise Time 52 ns 28A, V CC = 72V t d(off) Turn-Off Delay Time 27 V GE = 5V, R G = 5.Ω t f Fall Time 9 Energy losses include "tail" and E ts Total Switching Loss 6. mj diode reverse recovery. L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 33 V GE = V C oes Output Capacitance 2 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 45 ƒ =.MHz t rr Diode Reverse Recovery Time 9 35 ns T J = 25 C See Fig T J = 25 C 4 I F = 6A I rr Diode Peak Reverse Recovery Current 5.8 A T J = 25 C See Fig T J = 25 C 5 V R = 2V Q rr Diode Reverse Recovery Charge nc T J = 25 C See Fig T J = 25 C 6 di/dt = 2A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 2 A/µs T J = 25 C See Fig. During t b 76 T J = 25 C 7 2

3 4 For both: LOAD CURRENT (A) 3 2 Square wave: 6% of rated voltage I Duty cycle: 5% T J = 25 C T sink = 9 C Gate drive as specified Power Dissipation = 4 W Ideal diodes. f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current (A) T J = 25 C T = 5 J C V GE = 5V 2µs PULSE WIDTH V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 5 C T J = 25 C V CC = 5V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) V GE = 5V 8 us PULSE WIDTH 56 A 28 A 4 A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ).. D = SINGLE PULSE (THERMAL RESPONSE) Notes:. Duty factor D =t / t2 2. Peak T J= PDM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4

5 C, Capacitance (pf) VGE = V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 4V 28A V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 72V V GE = 5V T = 25 J C 28A Total Switching Losses (mj) R G = 5.Ω V GE = 5V V CC = 72V 56 A 28 A 4 A R G, Gate Resistance ( Ω ) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Fig. - Typical Switching Losses vs. Resistance Junction Temperature 5

6 Total Switching Losses (mj) R G = 5.Ω T J = 5 C V CC = 72V V GE = 5V I C, Collector Current (A) V GE = 2V o T J = 25 C I C, Collector Current (A) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig. 2 - Turn-Off SOA Instantaneous Forward Current - I F (A) T J= 5 C T J= 25 C T J= 25 C Forward Voltage Drop - V FM (V) Fig. 3 - Typical Forward Voltage Drop vs. Instantaneous Forward Current 6

7 3 4 IRG4PF5WD V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C 3 2 trr - (ns) I F = 32A I F = 6A I F = 8.A I RRM - (A) 2 I F = 32A I F = 6A I F = 8.A di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (A /µs) Fig. 5 - Typical Recovery Current vs. di f /dt 2 V R = 2V T J = 25 C T J = 25 C V R = 2V T J = 25 C T J = 25 C 9 Q RR - (nc) 6 I F = 32A I F = 6A I F = 8.A di(rec)m/dt - (A/µs) I F =6A I F = 8.A I F = 32A 3 di f /dt - (A/µs) di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt Fig. 7 - Typical di (rec)m /dt vs. di f /dt 7

8 Same type device as D.U.T. 8% of Vce 43µF D.U.T. V ge % 9% VC 9% t d(off) Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f I 5% % C t d(on) tr E on t f E off t=5µs E ts = (E on +E off ) Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx Vcc % Ic td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8

9 V g GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit V L V * c D.U.T. - 72V R L = 72V 4 X I C 5V 6µF V Figure 9. Clamped Inductive Load Test Circuit Figure 2. Pulsed Collector Current Test Circuit 9

10 Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=µH, R G = 5.Ω (figure 9) ƒpulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. Case Outline and Dimensions TO-247AC * 2.3 (.8) 9.7 (.775) 4.8 (.583) 4.2 (.559) 2.4 (.94) 2. (.79) 2X 5.45 (.25) 2X 5.9 (.626) 5.3 (.62) - B A - 2X 3.65 (.43) 3.55 (.4).25 (.) M 5.5 (.27) - C (.7) 3.7 (.45) 5.5 (.27) 4.5 (.77) 3X.4 (.56). (.39).25 (.) M C A S 3.4 (.33) 3. (.8) D B M - D (.29) 4.7 (.85) 2.5 (.89).5 (.59) 4.8 (.3) 3X.4 (.6) 2.6 (.2) 2.2 (.87) NOTES: DIMENSIONS & TOLERANCING PER ANSI Y4.5M, CONTROLLING DIM ENSION : INCH. 3 DIMENSIONS ARE SHOWN M ILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-247AC. LEAD ASSIGNMENTS - G ATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR * LONGER LEADED (2mm) VERSION AVAILABLE (TO-247AD) TO ORDER ADD "-E" SUFFIX TO PART NUMBER CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dimensions in Millimeters and (Inches) WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, Tel: (3) IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (95) IR GERMANY: Saalburgstrasse 57, 635 Bad Homburg Tel: IR ITALY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FAR EAST: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEAST ASIA: 35 Outram Road, #-2 Tan Boon Liat Building, Singapore 36 Tel: IR TAIWAN:6 Fl. Suite D. 27, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Tel: Data and specifications subject to change without notice. 7/98

11 Note: For the most current drawings please refer to the IR website at: