TO-247AC Absolute Maximum Ratings

Transcription

1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 khz, and Short Circuit Rated to 25 C, V GE = 5V Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than G Generation 3 IGBT co-packaged with HEXFRED TM ultrafast, E ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations Industry standard TO-247AC package Benefits Generation 4 IGBTs offer highest efficiencies available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs PD -9584A IRG4PC40KD Short Circuit Rated UltraFast IGBT V CES = 600V V CE(on) typ. = GE = 5V, I C = 25A TO-247AC Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I T C = 25 C Continuous Collector Current 42 I T C = 0 C Continuous Collector Current 25 I CM Pulsed Collector Current 84 A I LM Clamped Inductive Load Current 84 I T C = 0 C Diode Continuous Forward Current 5 I FM Diode Maximum Forward Current 84 t sc Short Circuit Withstand Time µs V GE Gate-to-Emitter Voltage ± 20 V P T C = 25 C Maximum Power Dissipation 60 P T C = 0 C Maximum Power Dissipation 65 W T J Operating Junction and -55 to +50 T STG Storage Temperature Range C Soldering Temperature, for sec. 300 (0.063 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case - IGBT 0.77 R θjc Junction-to-Case - Diode.7 C/W R θcs Case-to-Sink, flat, greased surface 0.24 R θja Junction-to-Ambient, typical socket mount 40 Wt Weight 6 (0.2) g (oz) 4/5/2000

2 Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 V V GE = 0V, I C = 250µA V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.46 V/ C V GE = 0V, I C =.0mA V CE(on) Collector-to-Emitter Saturation Voltage I C = 25A V GE = 5V 2.70 V I C = 42A See Fig. 2, I C = 25A, T J = 50 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -3 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance S V CE = 0V, I C = 25A I CES Zero Gate Voltage Collector Current 250 µa V GE = 0V, V CE = 600V 3500 V GE = 0V, V CE = 600V, T J = 50 C V FM Diode Forward Voltage Drop.3.7 V I C = 5A See Fig I C = 5A, T J = 50 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 25A Q ge Gate - Emitter Charge (turn-on) 6 24 nc V CC = 400V See Fig.8 Q gc Gate - Collector Charge (turn-on) 5 77 V GE = 5V t d(on) Turn-On Delay Time 53 t r Rise Time 33 ns t d(off) Turn-Off Delay Time 60 I C = 25A, V CC = 480V t f Fall Time 0 50 V GE = 5V, R G = Ω E on Turn-On Switching Loss 0.95 Energy losses include "tail" E off Turn-Off Switching Loss 0.76 mj See Fig. 9,,4 E ts Total Switching Loss t sc Short Circuit Withstand Time µs V CC = 360V, V GE = 5V, R G = Ω, V CPK < 500V t d(on) Turn-On Delay Time 52 T J = 50 C, t r Rise Time 37 I C = 25A, V CC = 480V ns t d(off) Turn-Off Delay Time 220 V GE = 5V, R G = Ω t f Fall Time 40 Energy losses include "tail" E ts Total Switching Loss 2.67 mj See Fig.,4 L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance 600 V GE = 0V C oes Output Capacitance 30 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 55 ƒ =.0MHz t rr Diode Reverse Recovery Time ns See Fig I F = 5A I rr Diode Peak Reverse Recovery Current A See Fig V R = 200V Q rr Diode Reverse Recovery Charge nc See Fig di/dt = 200Aµs di (rec)m /dt Diode Peak Rate of Fall of Recovery 88 A/µs See Fig. During t b

3 30 LOAD CURRENT (A) Square wave: 60% of rated voltage I For both: Duty cycle: 50% T sink = 90 C Gate drive as specified Power Dissipation = 35 W 5 Ideal diodes f, Frequency (KHz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 0 0 I C, Collector-to-Emitter Current (A) T = 50 o J C T = 25 o J C V GE = 5V 20µs PULSE WIDTH 0. V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) T J = 50 C V CC = 50V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) A Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) V GE = 5V 80 us PULSE WIDTH I C = 50 A I C = 25 A I C = 2.5 A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) 0. D = PDM t 0.02 t2 SINGLE PULSE 0.0 (THERMAL RESPONSE) Notes:. Duty factor D = t / t2 2. Peak T J = PDM x Z thjc + TC t, Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4

5 C, Capacitance (pf) VGE = 0V, f = MHz Cies = Cge + Cgc, C ce SHORTED Cres = Cgc Coes = Cce + Cgc C ies 500 C oes C res 0 0 V CE, Collector-to-Emitter Voltage (V) V GE, Gate-to-Emitter Voltage (V) 20 V CC = 400V I C = 25A Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 480V V GE = 5V T = 25 J C I C = 25A Total Switching Losses (mj) 0 R G = Ω Ohm V GE = 5V V CC = 480V I C = I C = 50A 25A I C = 2.5A R G R G, Gate Resistance ((Ohm) Ω ) T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5

6 Total Switching Losses (mj) R G = Ohm Ω T J = 50 C V CC = 480V V GE = 5V I C, Collector-to-emitter Current (A) Fig. - Typical Switching Losses vs. Collector-to-Emitter Current I C, Collector-to-Emitter Current (A) 00 V GE = 20V T = o J 25 CC 0 SAFE OPERATING AREA 0 00 V CE, Collector-to-Emitter Voltage (V) Fig. 2 - Turn-Off SOA 0 Instantaneous Forward Current - I F (A) T J = 50 C Forward Voltage Drop - V FM (V ) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6

7 0 0 IRG4PC40KD V R = 200V V R = 200V 80 I = 30A F t rr - (ns) 60 I F = 30A I F = 5A I IRRM - (A) I F = 5A 40 I F = 5.0A I = 5.0A F di f /dt - (A/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt 0 00 di f /dt - (A/µs) Fig. 5 - Typical Recovery Current vs. di f /dt V R = 200V V R = 200V 600 Q RR - (nc) 400 I F = 5A I F = 5.0A I F = 30A di(rec)m/dt - (A/µs) I F = 5.0A I F = 5A I = 30A F di f /dt - (A/µs) Fig. 6 - Typical Stored Charge vs. di f /dt di f /dt - (A/µs) Fig. 7 - Typical di (rec)m /dt vs. di f /dt 7

8 Same type device as D.U.T. +Vge 90% Vge Vce 80% of Vce 430µF D.U.T. Ic % Vce Ic 90% Ic 5% Ic td(off) tf Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t+5µ S Eoff = Vce ic Ic dt dt t t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx Vcc % Ic td(on) t Vce tr 90% Ic 5% Vce Ipk Ic Vce ie dt t2 Eon = Vce Ic dt t t2 DUT VOLTAGE AND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr Vcc DIODE RECOVERY W AVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8

9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D t0 t t2 Figure 8e. Macro Waveforms for Figure 8a's Test Circuit 00V L V * c D.U.T V R L = 480V 4 X I C 50V 6000µF 0V Figure 9. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit 9

10 Notes: Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20) V CC =80%(V CES ), V GE =20V, L=µH, R G = Ω (figure 9) ƒpulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. Case Outline TO-247AC * (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X 5.90 (.626) 5.30 (.602) - B (.43) 3.55 (.40) 0.25 (.0) M D B - A (.27) 2X - C (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77).40 (.056) 3X.00 (.039) 0.25 (.0) M C A S 3.40 (.33) 3.00 (.8) M - D (.209) 4.70 (.85) 2.50 (.089).50 (.059) (.03) 3X 0.40 (.06) 2.60 (.2) 2.20 (.087) NOTES: DIMENSIONS & TOLERANCING PER A NSI Y4.5M, CON TROLLIN G DIMEN SION : INCH. 3 DIME NSIONS A RE SHO W N MILLIMET ERS (INCH ES). 4 CON FORM S TO JEDEC O UTLINE TO-247AC. LEAD ASSIGNMENTS - GAT E 2 - COLLECTO R 3 - EMITT ER 4 - COLLECTO R * LO NGER LEADED (20m m ) VERSION AVAILABLE (TO-247AD) TO ORDER ADD "-E" SUFFIX TO PART NUMBER CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) Dimensions in Millimeters and (Inches) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CANADA: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: (0) IR ITALY: Via Liguria 49, 07 Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 7 Tel: 8 (0) IR SOUTHEAST ASIA: Kim Seng Promenade, Great World City West Tower, 3-, Singapore Tel: (0) IR TAIWAN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0) Data and specifications subject to change without notice. 4/00

11 Note: For the most current drawings please refer to the IR website at: