T J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (0.063 in. (1.

Transcription

1 PD INSULATED GATE BIPOLAR TRANSISTOR IRG4BC30S-S Standard Speed IGBT Features Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design provides tight parameter distribution and high efficiency Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions G C E n-channel V CES = 600V V CE(on) typ. = GE = 15V, I C = 18A Absolute Maximum Ratings D 2 Pak Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 V I T C = 25 C Continuous Collector Current 34 I T C = 0 C Continuous Collector Current 18 A I CM Pulsed Collector Current 68 I LM Clamped Inductive Load Current 68 V GE Gate-to-Emitter Voltage ±20 V E ARV Reverse Voltage Avalanche Energy ƒ mj P T C = 25 C Maximum Power Dissipation 0 P T C = 0 C Maximum Power Dissipation 42 W T J Operating Junction and -55 to +150 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (0.063 in. (1.6mm) from case ) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.2 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient, typical socket mount 40 Wt Weight 1.44 g (oz) /28/00

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage 600 V V GE = 0V, I C = 250µA V (BR)ECS Emitter-to-Collector Breakdown Voltage 18 V V GE = 0V, I C = 1.0A V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage 0.75 V/ C V GE = 0V, I C = 1.0mA I C = 18A V GE = 15V V CE(ON) Collector-to-Emitter Saturation Voltage 1.84 I C = 34A See Fig. 2, 5 V 1.45 I C = 18A, T J = 150 C V GE(th) Gate Threshold Voltage V CE = V GE, I C = 250µA V GE(th) / T J Temperature Coeff. of Threshold Voltage -11 mv/ C V CE = V GE, I C = 250µA g fe Forward Transconductance S V CE = 0V, I C = 18A 250 V GE = 0V, V CE = 600V I CES Zero Gate Voltage Collector Current µa 2.0 V GE = 0V, V CE = V, T J = 25 C 00 V GE = 0V, V CE = 600V, T J = 150 C I GES Gate-to-Emitter Leakage Current ±0 na V GE = ±20V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 18A Q ge Gate - Emitter Charge (turn-on) nc V CC = 400V See Fig. 8 Q gc Gate - Collector Charge (turn-on) V GE = 15V t d(on) Turn-On Delay Time 22 t r Rise Time 18 T J = 25 C ns t d(off) Turn-Off Delay Time I C = 18A, V CC = 480V t f Fall Time V GE = 15V, R G = 23Ω E on Turn-On Switching Loss 0.26 Energy losses include "tail" E off Turn-Off Switching Loss 3.45 mj See Fig. 9,, 14 E ts Total Switching Loss t d(on) Turn-On Delay Time 21 T J = 150 C, t r Rise Time 19 I C = 18A, V CC = 480V ns t d(off) Turn-Off Delay Time 790 V GE = 15V, R G = 23Ω t f Fall Time 760 Energy losses include "tail" E ts Total Switching Loss 6.55 mj See Fig. 11, 14 L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 10 V GE = 0V C oes Output Capacitance 72 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 13 ƒ = 1.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature (See fig. 13b). V CC = 80%(V CES ), V GE = 20V, L = µh, R G = 23Ω, (See fig. 13a). ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. 2

3 50 Load Current ( A ) Square wave: 60% of rated voltage I For both: Duty cycle: 50% T J = 125 C T sink = 90 C Gate drive as specified Power Dissipation = 21W Triangular wave: I Clamp voltage: 80% of rated Ideal diodes 0 A f, Frequency (khz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) 0 0 I C, Collector-to-Emitter Current (A) T = 25 o T = 150 o V GE = 15V 20µs PULSE WIDTH 1 1 V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current (A) 1 T = 150 o T = 25 o V CC = 50V 5µs PULSE WIDTH V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 3

4 Maximum DC Collector Current(A) V CE, Collector-to-Emitter Voltage(V) V GE = 15V 80 us PULSE WIDTH I C = I C = 36 A 18 A I C = 9.09 A T C, Case Temperature ( C) T J, Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ) D = t SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t2 2. Peak T J = PDM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4

5 C, Capacitance (pf) VGE = 0V, f = 1MHz Cies = Cge + Cgc, C ce Cres = Cgc Coes = Cce + Cgc C ies C oes SHORTED V GE, Gate-to-Emitter Voltage (V) V CC = 400V I C = 18A C res V CE, Collector-to-Emitter Voltage (V) Q G, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) V CC = 480V V GE = 15V T = 25 I C = 18A Total Switching Losses (mj) 0 1 R G = 23Ohm Ω V GE = 15V V CC = 480V I C = I C = I C = 36 A 18 A A R G, Gate Resistance (Ohm) Ω T J, Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature 5

6 Total Switching Losses (mj) R G = 23Ohm Ω T J = 150 C V CC = 480V V GE = 15V I C, Collector-to-emitter Current (A) I C, Collector-to-Emitter Current (A) 00 0 V GE = 20V T = 125 o SAFE OPERATING AREA V CE, Collector-to-Emitter Voltage (V) Fig Typical Switching Losses vs. Collector-to-Emitter Current Fig Turn-Off SOA 6

7 50V 00V L V * C D.U.T V 480µF 960V 480V R L = 4 X I C@25 C * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit I C 50V 00V L Driver* D.U.T. V C ƒ Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V 90% ƒ % V C 90% t d(off) Fig. 14b - Switching Loss Waveforms I C 5% % td(on) tr E on t f Eoff t=5µs E ts = (E on +E off ) 7

8 D 2 Pak Package Outline 1.40 (.055) M AX..54 (.415).29 (.405) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048).16 (.400) REF (.255) 6.18 (.243) 1.78 (.070) 1.27 (.050) (.6) (.580) 2.79 (.1) 2.29 (.090) 5.28 (.208) 4.78 (.188) 2.61 (.3) 2.32 (.091) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 3X 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) 8.89 (.350) REF (.0) M B A M MINIMUM RECOMMENDED FOOTPRINT (.450) NOTES: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 3.81 (.150) (.700) 2.08 (.082) 2X 2.54 (.0) 2X D 2 Pak Part Marking Information INTERNATIONAL PART NUMBER RECTIFIER F530S LOGO B 1M DATE CODE (YYW W ) ASSEMBLY YY = YEAR LOT CODE WW = WEEK 8 A

9 D 2 Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065).90 (.429).70 (.421) (.457) (.449) 16. (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MAX. 4 Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.12/00 9

10 Note: For the most current drawings please refer to the IR website at: