IRG4BC30FD-SPbF. Fast CoPack IGBT. n-channel. Absolute Maximum Ratings Parameter Max. Units INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE

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1 INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features Fast: optimized for medium operating frequencies (1-5 khz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. Lead-Free IRG4BC30FD-SPbF G C E n-channel PD A Fast CoPack IGBT V CES = 600V V CE(on) typ. = GE = 15V, I C = 17A Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing. Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's. D 2 Pak Absolute Maximum Ratings Parameter Max. Units V CES Collector-to-Emitter Voltage 600 V I T C = 25 C Continuous Collector Current 31 I T C = 100 C Continuous Collector Current 17 A I CM Pulse Collector Current (Ref.Fig.C.T.5) c 124 I LM Clamped Inductive Load current d 124 I T C = 100 C Diode Continuous Forward Current 12 I FM Diode Maximum Forward Current 120 V GE Gate-to-Emitter Voltage ±20 V P T C = 25 C Maximum Power Dissipation 100 W P T C = 100 C Maximum Power Dissipation 42 T J Operating Junction and -55 to +150 C Storage Temperature Range T STG Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units R θjc Junction-to-Case- IGBT 1.2 C/W R θcs Case-to-Sink, flat, greased surface 0.50 R θja Junction-to-Ambient (PCB Mounted,steady state)g 40 Wt Weight 2.0 (0.07) g (oz.) /27/10

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltage e 600 V V GE = 0V, I C = 250µA V (BR)CES / T J Temperature Coeff. of Breakdown Voltage 0.69 V/ C V GE = 0V, I C = 1mA I C = 17A V GE = 15V V CE(on) Collector-to-Emitter Voltage 1.99 V I C = 31A See Fig. 2, I C = 17A, T J = 150 C V GE(th) Gate Threshold Voltage V V CE = V GE, I C = 250µA V GE(th) / T J Threshold Voltage temp. coefficient -11 mv/ C V CE = V GE, I C = 250µA gfe Forward Transconductance f S V CE = 100V, I C = 17A I CES Zero Gate Voltage Collector Current 250 µa V GE = 0V, V CE = 600V 2500 V GE = 0V, V CE = 600V, T J = 150 C V FM Diode Forward Voltage Drop V I F = 12A See Fig I F = 12A, T J = 150 C I GES Gate-to-Emitter Leakage Current ±100 na V GE = ±20V Switching T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) I C = 17A Q ge Gate-to-Emitter Charge (turn-on) nc V CC = 400V See Fig. 8 Q gc Gate-to-Collector Charge (turn-on) V GE = 15V t d(on) Turn-On delay time 42 T J = 25 C t r Rise time 26 ns I C = 17A, V CC = 480V t d(off) Turn-Off delay time V GE = 15V, R G = 23Ω t f Fall time Energy losses inlcude "tail" and E on Turn-On Switching Loss 0.63 diode reverse recovery. E off Turn-Off Switching Loss 1.39 mj See Fig. 9, 10, 11, 18 E ts Total Switching Loss t d(on) Turn-On delay time 42 T J = 150 C See Fig. 9,10,11,18 t r Rise time 27 ns I C = 17A, V CC = 480V t d(off) Turn-Off delay time 310 V GE = 15V, R G = 23Ω t f Fall time 310 Energy losses inlcude "tail" and E ts Total Switching Loss 3.2 mj diode reverse recovery. L E Internal Emitter Inductance 7.5 nh Measured 5mm from package C ies Input Capacitance 1100 V GE = 0V C oes Output Capacitance 74 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 14 f = 1.0MHz t rr Diode Reverse Recovery Time ns T J = 25 C See Fig T J = 125 C 14 I F = 12A I rr Diode Peak Reverse Recovery Current A T J = 25 C See Fig T J = 125 C 15 V R = 200V Q rr Diode Reverse Recovery Charge nc T J = 25 C See Fig T J = 125 C 16 di/dt 200A/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 180 A/µs T J = 25 C See Fig. During t b 120 T J = 125 C

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8 Same type device as D.U.T. +Vge 90% Vge Vce 80% of Vce 430µF D.U.T. Ic 10% Vce Ic 90% Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t1+5µs Eoff = Vce ic Ic dt dt t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining E off, t d(off), t f 10% +Vg GATE VOLTAGE D.U.T. +Vg Ic trr trr Qrr id Ic dt = tx 10% Ic Vcc td(on) t1 Vce tr 90% Ic 5% Vce Ipk Ic t2 Eon = Vce ie Ic dt dt Vce t1 t2 DUT VOLTAGE AND CURRENT Vpk tx 10% Vcc Irr DIODE REVERSE RECOVERY ENERGY 10% Irr Vcc DIODE RECOVERY WAVEFORMS t4 Erec Vd id Ic dt dt = t3 t3 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8

9 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig.18e - Macro Waveforms for Figure 18a's Test Circuit R L = VCC ICM L D.U.T. 50V 6000µF 100V 1000V V * c 0 - VCC 480µF Fig Clamped Inductive Load Test Circuit Pulsed Collector Current Test Circuit Fig Pulsed Collector Current Test Circuit 9

10 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'(,17(51$7,21$/ $66(0%/('21:: 5(&7,),(5,17+($66(0%/</,1(/ /2*2 $66(0%/< /27&2'( )6 3$57180%(5 '$7(&2'( <($5 :((. /,1(/ 25,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( )6 3$57180%(5 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( Note: For the most current drawing please refer to IR website at

11 D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) (.429) (.421) (.457) (.449) (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MAX. 4 Notes: Repetitive rating: V GE =20V; pulse width limited by maximum junction temperature (figure 20). V CC =80%(V CES ), V GE =20V, L=10µH, R G = 23Ω (figure 19). ƒpulse width 80µs; duty factor 0.1%. Pulse width 5.0µs, single shot. When mounted on 1" square PCB (FR-4 or G-10 Material). Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information. 01/