P C = 100 C Power Dissipation Linear Derating Factor

Transcription

1 PDP TRENH IGBT PD IRGP486PbF Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery ircuits in PDP Applications l Low V E(on) and Energy per Pulse (E PULSE TM ) for Improved Panel Efficiency l High Repetitive Peak urrent apability l Lead Free Package Key Parameters V E min 3 V V E(ON) I = 7A 1.9 V I RP T = 25 c 25 A T J max 15 G E n-channel TO-247A E G G E Gate ollector Em itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low V E(on) and low E PULSE TM rating per silicon area which improve panel efficiency. Additional features are 15 operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. Absolute Maximum Ratings Parameter Units V GE Gate-to-Emitter Voltage ±3 V T = 25 ontinuous ollector urrent, V 15V 7 A T = 1 ontinuous ollector, V 15V 4 I T = 25 Repetitive Peak urrent c 25 P = 25 Power Dissipation 16 W P = 1 Power Dissipation Linear Derating Factor W/ T J Operating Junction and -4 to + 15 T STG Storage Temperature Range Soldering Temperature for 1 seconds Mounting Torque, 6-32 or M3 Screw 3 1lbxin (1.1Nxm) N Thermal Resistance Parameter Typ. Max. Units R θj (IGBT) Thermal Resistance Junction-to-ase-(each IGBT) d.8 R θs ase-to-sink (flat, greased surface).24 /W R θja Junction-to-Ambient (typical socket mount) d 4 Weight 6. (.21) g (oz) Max /17/8

2 IRGP486PbF Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions BV ES ollector-to-emitter Breakdown Voltag 3 V V GE = V, I E = 1 ma ΔΒV ES /ΔT J Breakdown Voltage Temp. oefficient.29 V/ Reference to 25, I E = 1mA , I E = 25A e , I E = 4A e V E(on) Static ollector-to-emitter Voltage V, I E = 7A e , I E = 12A e 2.27, I E = 7A, T J = 15 V GE(th) Gate Threshold Voltage V V E = V GE, I E = 5μA ΔV GE(th) /ΔT J Gate Threshold Voltage oefficient -11 mv/ I ES ollector-to-emitter Leakage urrent μa V E = 3V, V GE = V 5. V E = 3V, V GE = V, T J = 1 1 V E = 3V, V GE = V, T J = 15 I GES Gate-to-Emitter Forward Leakage 1 na V GE = 3V Gate-to-Emitter Reverse Leakage -1 V GE = -3V g fe Forward Transconductance 29 S V E = 25V, I E = 25A Q g Total Gate harge 65 n V E = 2V, I = 25A, e Q gc Gate-to-ollector harge 22 t d(on) Turn-On delay time 36 I = 25A, V = 196V t r Rise time 31 ns R G = 1Ω, L=2μH, L S = 2nH t d(off) Turn-Off delay time 112 T J = 25 t f Fall time 65 t d(on) Turn-On delay time 3 I = 25A, V = 196V t r Rise time 33 ns R G = 1Ω, L=2μH, L S = 2nH t d(off) Turn-Off delay time 145 T J = 15 t f Fall time 98 t st Shoot Through Blocking Time 1 ns V = 24V,, R G = 5.1Ω L = 22nH, =.4μF, 175 E PULSE Energy per Pulse μj V = 24V, R G = 5.1Ω, T J = L = 22nH, =.4μF, V = 24V, R G = 5.1Ω, T J = 1 iss Input apacitance 225 V GE = V oss Output apacitance 11 pf V E = 3V rss Reverse Transfer apacitance 58 ƒ = 1.MHz, See Fig.13 L Internal ollector Inductance 5. Between lead, nh 6mm (.25in.) L E Internal Emitter Inductance 13 from package and center of die contact Notes: Half sine wave with duty cycle =.1, ton=2μsec. R θ is measured at T J of approximately 9. ƒ Pulse width 4μs; duty cycle 2%. 2

3 IRGP486PbF V GE = 1V V GE = 8.V V GE = 6.V V GE = 1V V GE = 8.V V GE = 6.V Fig 1. Typical Output 25 Fig 2. Typical Output V GE = 1V V GE = 8.V V GE = 6.V V GE = 1V V GE = 8.V V GE = 6.V Fig 3. Typical Output 125 Fig 4. Typical Output I = 25A T J = 25 T J = T J = 25 T J = V GE (V) V GE (V) Fig 5. Typical Transfer haracteristics Fig 6. V E(ON) vs. Gate Voltage 3

4 Energy per Pulse (μj) I (A) Energy per Pulse (μj) Energy per Pulse (μj) I, ollector urrent (A) Repetitive Peak urrent (A) IRGP486PbF T, ase Temperature ( ) Fig 7. Maximum ollector urrent vs. ase Temperature V = 24V L = 22nH = variable I, Peak ollector urrent (A) 25 1 ton= 2μs Duty cycle =.1 Half Sine Wave ase Temperature ( ) Fig 8. Typical Repetitive Peak urrent vs. ase Temperature L = 22nH =.4μF V E, ollector-to-emitter Voltage (V) Fig 9. Typical E PULSE vs. ollector urrent Fig 1. Typical E PULSE vs. ollector-to-emitter Voltage 2 V = 24V 1 16 L = 22nH t = 1μs half sine =.4μF μs 1 μs 8 =.3μF 1 1ms 4 =.2μF T J, Temperature (º) Fig 11. E PULSE vs. Temperature Fig 12. Forward Bias Safe Operating Area 4

5 apacitance (pf) V GE, Gate-to-Source Voltage (V) IRGP486PbF 1 25 I D = 25A 1 ies 2 15 V DS = 24V V DS = 2V V DS = 15V 1 1 oes res Q G Total Gate harge (n) Fig 13. Typical apacitance vs. ollector-to-emitter Voltage Fig 14. Typical Gate harge vs. Gate-to-Emitter Voltage 1 Thermal Response ( Z thj ) D = R 1 R 1 R 2 R 2 R 3 R 3 τ J τ J τ 1 τ 1 τ 2 τ 2 τ 3 τ 3 i= τi/ri i= τi/ri τ τ Ri ( /W) τι (sec) SINGLE PULSE ( THERMAL RESPONSE ) 1E-6 1E t 1, Rectangular Pulse Duration (sec) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-ase (IGBT) 5

6 IRGP486PbF A RG DRIVER PULSE A L V PULSE B B RG Ipulse DUT t ST Fig 16a. t st and E PULSE Test ircuit Fig 16b. t st Test Waveforms V E Energy I urrent 1K DUT L V Fig 16c. E PULSE Test Waveforms Fig Gate harge ircuit (turn-off) 6

7 IRGP486PbF TO-247A Package Outline Dimensions are shown in millimeters (inches) TO-247A Part Marking Information EXAMPLE: THIS IS AN IRFPE3 WIT H AS S EMBLY LOT ODE 5657 ASSEMBLED ON WW 35, 21 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RETIFIER LOGO ASSEMBLY LOT ODE IRFPE3 135H PART NUMBER DATE ODE YEAR 1 = 21 WEEK 35 LINE H TO-247A package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and Data and specifications subject to change without notice. procedures, which by their nature do not include qualification to This product has been designed for the Industrial market. all possible or even all widely used applications. Without Qualification Standards can be found on IR s Web site. limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. ustomers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, alifornia 9245, USA Tel: (31) TA Fax: (31) Visit us at for sales contact information.4/8 7