Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case )

Transcription

1 PD E RG4B30U NSULTED GTE BPOLR TRNSSTOR UltraFast Speed GBT Features UltraFast: optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 GBT design provides tighter parameter distribution and higher efficiency than Generation 3 ndustry standard TO-220B package G E n-channel ES = 600 E(on) typ. GE = 5, = 2 Benefits Generation 4 GBTs offer highest efficiency available GBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 R GBTs bsolute Maximum Ratings Parameter Max. Units ES ollector-to-emitter Breakdown oltage T = 25 ontinuous ollector urrent T = 0 ontinuous ollector urrent 2 M Pulsed ollector urrent 92 LM lamped nductive Load urrent 92 GE Gate-to-Emitter oltage ± 20 E R Reverse oltage valanche Energy ƒ mj P T = 25 Maximum Power Dissipation 0 P T = 0 Maximum Power Dissipation 42 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. lbf in (.N m) Thermal Resistance TO-220B Parameter Typ. Max. Units R θj Junction-to-ase.2 R θs ase-to-sink, Flat, Greased Surface 0.50 /W R θj Junction-to-mbient, typical socket mount 80 Wt Weight 2 (0.07) g (oz) 4/7/2000

2 RG4B30U Electrical T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions (BR)ES ollector-to-emitter Breakdown oltage 600 GE = 0, = 250µ (BR)ES Emitter-to-ollector Breakdown oltage 8 GE = 0, =.0 (BR)ES / T J Temperature oeff. of Breakdown oltage 0.63 / GE = 0, =.0m = 2 GE = 5 E(ON) ollector-to-emitter Saturation oltage 2.52 = 23 See Fig.2, = 2, T J = 50 GE(th) Gate Threshold oltage E = GE, = 250µ GE(th) / T J Temperature oeff. of Threshold oltage -3 m/ E = GE, = 250µ g fe Forward Transconductance S E = 0, = GE = 0, E = 600 ES Zero Gate oltage ollector urrent µ 2.0 GE = 0, E =, T J = GE = 0, E = 600, T J = 50 GES Gate-to-Emitter Leakage urrent ±0 n GE = ±20 Switching T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) = 2 Q ge Gate - Emitter harge (turn-on) 8. 2 n = 400 See Fig.8 Q gc Gate - ollector harge (turn-on) 8 27 GE = 5 t d(on) Turn-On Delay Time 7 t r Rise Time 9.6 T J = 25 ns t d(off) Turn-Off Delay Time = 2, = 480 t f Fall Time GE = 5, R G = 23Ω E on Turn-On Switching Loss 0.6 Energy losses include "tail" E off Turn-Off Switching Loss 0.20 mj See Fig.,, 3, 4 E ts Total Switching Loss t d(on) Turn-On Delay Time 20 T J = 50, t r Rise Time 3 = 2, = 480 ns t d(off) Turn-Off Delay Time 80 GE = 5, R G = 23Ω t f Fall Time 40 Energy losses include "tail" E ts Total Switching Loss 0.73 mj See Fig. 3, 4 L E nternal Source nductance 7.5 nh Measured 5mm from package ies nput apacitance 0 GE = 0 oes Output apacitance 73 pf = 30 See Fig.7 res Reverse Transfer apacitance 4 ƒ =.0MHz Notes: Repetitive rating; GE = 20, pulse width limited by max. junction temperature. ( See fig. 3b ) = 80%( ES ), GE = 20, L = µh, R G = 23Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2

3 RG4B30U Load urrent ( ) For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power D issipation = 2W Triangular wave: lamp voltage: 80% of rated 20 5 Square wave: 60% of rated voltage 5 deal diodes f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, = RMS of fundamental; for triangular wave, = PK ) 0 0, ollector-to-emitter urrent () T J = 25 T J = 50 = 5 GE = 20µ s PULSE W DTH 0. 5 µ s PULSE W DTH E, ollector-to-em itter oltag e () GE, Gate-to-Em itter oltag e (), ollector-to-emitter urrent () T = 50 J T = 25 J Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics 3

4 RG4B30U Maximum D ollector urrent ( GE = 5 E, ollector-to-emitter oltage () GE = 5 80µ s PULSE W DTH = 24 = 2 = T, ase Temperature ( ) T, Junction Temperature ( ) J Fig. 4 - Maximum ollector urrent vs. ase Temperature Fig. 5 - ollector-to-emitter oltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = SN G LE P ULSE (THERML RESPONSE) 2. Peak T J = P DM x Z thj + T t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal mpedance, Junction-to-ase 4

5 RG4B30U, apacitance (pf) GE = 0, f = MHz ies = ge + gc, ce SHORTED res = gc oes = ce + gc ies oes res GE, Gate-to-Em itter oltage () E = 400 = E, ollector-to-emitter oltage () Q g, Total Gate harg e (n) Fig. 7 - Typical apacitance vs. ollector-to-emitter oltage Fig. 8 - Typical Gate harge vs. Gate-to-Emitter oltage Total Switching Losses (mj) = 480 GE = 5 T J = 25 = 2 Total Switching Losses (mj) R G GE = 23 Ω = 5 = 480 = 2 4 = 2 = R G, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance T J, Junction Temperature ( ) Fig. - Typical Switching Losses vs. Junction Temperature 5

6 RG4B30U Total Switching Losses (mj) R G = 23 Ω T J = 50 = 480 GE = 5, ollector-to-emitter urrent () 00 0 GE = 20 T = 25 J SFE OPERTNG RE , ollector-to-emitter urrent () , ollector-to-emitter oltage () E Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SO 6

7 RG4B30U L * D.U.T µF 960 R L = * Driver same ty pe as D.U.T.; c = 80% of ce(max) * Note: Due to the 50 power supply, pulse width and inductor w ill increase to obtain rated d. Fig. 3a - lamped nductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit L Driver* D.U.T. ƒ Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., = % ƒ % 90% t d(off) Fig. 4b - Switching Loss Waveforms 5% % t d(on) t r E on t f E off t=5µs E ts = (E on +E off ) 7

8 RG4B30U ase Outline and Dimensions TO-220B 2.87 (.3) 2.62 (.3) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530).54 (.45).29 (.405) (.49) 3.54 (.39) (.255) 6. (.240).5 (.045) MN 3 X 4.06 (.60) 3.55 (.40) 3.96 (.60) 3.55 (.40) 4.69 (.85) 4.20 (.65) - B -.32 (.052).22 (.048) NOTES: DMENSONS & TOLERNNG PER NS Y4.5M, ONTROLLNG DMENSON : NH. 3 DM ENSONS RE SHO W N M LLM ETER S (NHES). 4 ONFORMS TO JEDE OUTLNE TO-220B. LED SSGNMENTS - GTE 2 - OLLE TO R 3 - EM TTER 4 - OLLE TO R.40 (.055) 3 X.5 (.045) 2.54 (.0) 2X 0.93 (.037) 3 X 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3 X 0.46 (.08) 2.92 (.5) 2.64 (.4) ONFORMS TO JEDE OUTLNE TO-220B D im ens ions in M illim eters and (nc hes) R WORLD HEDQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (3) R EUROPEN REGONL ENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey R3 OBL, UK Tel: (0) R ND: 5 Lincoln ourt, Brampton, Ontario L6T3Z2, Tel: (905) R GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: (0) R TLY: ia Liguria 49, 07 Borgaro, Torino Tel: R JPN: K&H Bldg., 2F, 30-4 Nishi-kebukuro 3-home, Toshima-Ku, Tokyo 7 Tel: 8 (0) R SOUTHEST S: Kim Seng Promenade, Great World ity West Tower, 3-, Singapore Tel: (0) R TWN:6 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0) Data and specifications subject to change without notice. 4/00 8

9 Note: For the most current drawings please refer to the R website at: