HFA30TA60C HEXFRED TM. Ultrafast, Soft Recovery Diode TO-220AB. Bulletin PD rev. A 11/00. Features. Description

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1 Bulletin PD rev. / HEXFRED TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Q rr Guaranteed valanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count Description International Rectifier's HF3T6C is a state of the art center tap ultra fast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 6 volts and 5 amps per Leg continuous current, the HF3T6C is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (I RRM) and does not exhibit any tendency to "snap-off" during the t b portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED HF3T6C is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. bsolute Maximum Ratings HF3T6C Ultrafast, Soft Recovery Diode V R = 6V V F (typ.)* =.V I F(V) = 5 Q rr (typ.)= 8nC I RRM (typ.) = 4. t rr (typ.) = 9ns di (rec)m /dt (typ.)* = 6/µs Parameter Max Units V R Cathode-to-node Voltage 6 V I T C = 5 C Continuous Forward Current I T C = C Continuous Forward Current 5 I FSM Single Pulse Forward Current 5 I FRM Maximum Repetitive Forward Current 6 P T C = 5 C Maximum Power Dissipation 74 P T C = C Maximum Power Dissipation 9 W T J Operating Junction and T STG Storage Temperature Range -55 to +5 C * 5 C 3 TO-B

2 HF3T6C Bulletin PD rev. / Electrical (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions V BR Cathode node Breakdown Voltage 6 V I R = µ.3.7 I F = 5 V FM Max Forward Voltage.5. V I F = 3 See Fig...6 I F = 5, I RM Max Reverse Leakage Current. V R = V R Rated See Fig. µ 4, V R =.8 x V R Rated D Rated C T Junction Capacitance 5 5 pf V R = V See Fig. 3 L S Series Inductance 8 nh Measured lead to lead 5mm from package body Dynamic Recovery (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions t rr Reverse Recovery Time 9 I F =., di f/dt = /µs, V R = 3V t rr See Fig. 5, 4 6 ns t rr 7 I F = 5 I RRM Peak Recovery Current I RRM See Fig V R = V Q rr Reverse Recovery Charge 8 8 nc Q rr See Fig. 7 6 di f/dt = /µs di (rec)m/dt Peak Rate of Fall of Recovery Current 5 /µs di (rec)m/dt During t b See Fig. 8 6 Thermal - Mechanical Characteristics Parameter Min. Typ. Max. Units T lead! Lead Temperature 3 C R thjc Junction-to-Case, Single Leg Conducting.7 Junction-to-Case, Both Legs Conducting.85 R thj" Thermal Resistance, Junction to mbient 4 K/W R thcs# Thermal Resistance, Case to Heat Sink.5 Wt Weight 6. g. (oz) Mounting Torque 6. Kg-cm 5. lbf in!.63 in. from Case (.6mm) for sec " Typical Socket Mount # Mounting Surface, Flat, Smooth and Greased

3 HF3T6C Bulletin PD rev. / Instantaneous Forward Current - I F () T J= 5 C T J= 5 C T J = 5 C Forward Voltage Drop -- V FM (V) ( V ) Fig. - Maximum Forward Voltage Drop vs. Instantaneous Forward Current, Junction Capacitance -C T (pf) Reverse Current - I R (µ) Reverse Voltage - V R (V) Fig. - Typical Reverse Current vs. Reverse Voltage, T J = 5 C T = 5 C J Reverse Voltage - V R(V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage, Thermal Response (Z thjc ) D = SINGLE PULSE t (THERML RESPONSE) Notes:. Duty factor D = t / t. Peak T J = P x Z + TC DM thjc t, Rectangular Pulse Duration (sec) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics, PDM t 3

4 HF3T6C Bulletin PD rev. / 8 I F = 3 I F = 5 I F = 5. 5 V R= V I F = 3 I F = 5 I F = 5. trr- (ns) 6 Irr- ( ) V R = V di f /dt - (/µs) Fig. 5 - Typical Reverse Recovery Time vs. di f /dt, 8 V R = V di f/dt - (/µs) Fig. 6 - Typical Recovery Current vs. di f /dt, V R= V 6 I F = 3 Qrr- (nc) 4 I F = 5 I F = 5. di (rec) M/dt- ( /µs) I F = 3 I F = 5 I F = 5. di f /dt - (/µs) Fig. 7 - Typical Stored Charge vs. di f /dt, di f /dt - (/µs) Fig. 8 - Typical di (rec)m /dt vs. di f /dt, 4

5 HF3T6C Bulletin PD rev. / 3 REVERSE RECOVERY CIRCUIT IF ta trr t b V R = V. Ω I RRM Q rr.5 I RRM di(rec)m/dt 5 4 L = 7µH.75 I RRM D.U.T. di f /dt dif/dt DJUST G D S IRFP5. dif/dt - Rate of change of current through zero crossing. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through.75 IRRM and.5 IRRM extrapolated to zero current 4. Qrr - rea under curve defined by trr and IRRM trr X IRRM Qrr = 5. di(rec)m/dt - Peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. - Reverse Recovery Waveform and Definitions L = µh I L(PK) DUT Rg = 5 ohm HIGH-SPEED SWITCH FREE-WHEEL DIODE + CURRENT MONITOR Vd = 5V DECY TIME V (VL) VR(RTED) Fig. - valanche Test Circuit and Waveforms 5

6 HF3T6C Bulletin PD rev. / 5.4 (.6) 4.84 (.58).54 (.4) MX (.5) DI (.4).9 (.).54 (.) TERM 6.48 (.5) 6.3 (.4).3 (.5). (.5) 4.9 (.55) 3.47 (.53) 3.96 (.6) 3.55 (.4). (.4).4 (.5).5 (.4).4 (.8) MX..94 (.4).69 (.3).89 (.).64 (.) 4.57 (.8) 4.3 (.7) 3.6 (.) MX. 5.8 (.) REF. Conforms to JEDEC Outline TO-B Dimensions in millimeters and inches WORLD HEDQURTERS: 33 Kansas St., El Segundo, California 945 U.S.. Tel: (3) Fax: (3) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: Fax: IR CND: 5 Lincoln Court, Brampton, Markham, Ontario L6T3Z. Tel: (95) 453. Fax: (95) IR GERMNY: Saalburgstrasse 57, 635 Bad Homburg. Tel: Fax: IR ITLY: Via Liguria 49, 7 Borgaro, Torino. Tel: Fax: IR FR EST: K&H Bldg., F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 7. Tel: IR SOUTHEST SI: Kim Seng Promenade, Great World City West Tower,3-, Singapore Tel: IR TIWN: 6 Fl. Suite D.7, Sec., Tun Haw South Road, Taipei, 673, Taiwan. Tel: Fax-On-Demand: Data and specifications subject to change without notice. 6