UFB200FA40. Insulated Ultrafast Rectifier Module. Bulletin PD rev. C 10/02. t rr = 60ns I F(AV) = T C = 90 C V R = 400V

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1 Insulated Ultrafast Rectifier Module Features Two Fully Independent Diodes Ceramic Fully Insulated Package (V ISOL = 2500V AC) Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Optimized for Power Conversion: Welding and Industrial SMPS Applications Industry Standard Outline Plug-in Compatible with other SOT-227 Packages Easy to Assemble Direct Mounting to Heatsink UFB200FA40 t rr = 60ns I F(AV) = T C = 90 C V R = 400V Description The UFB200FA40 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping lifetime control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC- DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) and EMI/ RFI. Absolute Maximum Ratings Parameters Max Units V R Cathode-to-Anode Voltage 400 V I F Continuous Forward Current, T C = 90 C Per Diode 5 A I FSM Single Pulse Forward Current, T C = 25 C Per Diode 300 P D Max. Power Dissipation, T 90 C Per Module 240 W V ISOL RMS Isolation Voltage, Any Terminal to Case, t = min 2500 V T, T STG Operating unction and Storage Temperatures - 55 to 50 C Case Styles UFB200FA40 4 SOT

2 Electrical T = 25 C (unless otherwise specified) per diode Parameters Min Typ Max Units Test Conditions V BR Cathode Anode V I R = µa Breakdown Voltage V FM Forward Voltage V I F = A V I F = A, T = 50 C I RM Reverse Leakage Current µa V R = V R Rated ma T = 50 C, V R = V R Rated C T unction Capacitance - - pf V R = 400V Dynamic Recovery T = 25 C (unless otherwise specified) per diode Parameters Min Typ Max Units Test Conditions t rr Reverse Recovery Time ns I F =.0A, di F /dt = 200A/µs, V R = 30V T = 25 C T = 25 C I RRM Peak Recovery Current A T = 25 C I F = 50A V R = 200V di F /dt = 200A/µs T = 25 C Q rr Reverse Recovery Charge nc T = 25 C T = 25 C Thermal - Mechanical Characteristics Parameters Min Typ Max Units R thc unction to Case, Single Leg Conducting 0.5 C/W Both Leg Conducting 0.25 K/W R thcs Case to Heat Sink, Flat, Greased Surface 0.05 Wt Weight 30 g T Mounting Torque.3 (N m) 2

3 0 0 Instantaneous Forward Current - I F (A) 0 T = 50 C T = 25 C T = 25 C Reverse Current - I R (µa) unction Capacitance - C T (pf) Reverse Voltage - V R (V) 00 0 Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage T = 25 C Tj = 50 C 25 C 25 C Forward Voltage Drop - V F (V) Fig. - Typical Forward Voltage Drop Characteristics (per diode) Reverse Voltage - V R (V) Fig. 3 - Typical unction Capacitance Vs. Reverse Voltage Thermal Impedance Z thc ( C/W) 0. Single Pulse (Thermal Resistance) P DM t t 2 Notes:. Duty factor D = t/ t2 2. Peak Tj = Pdm x ZthC + Tc t, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thc Characteristics (per diode) 3

4 50 60 Allowable Case Temperature ( C) Square wave (D = 0.50) Rated Vr applied see note (3) DC Average Forward Current - I F(AV) (A) Average Power Loss ( W ) DC RMS Limit D = 0.0 D = 0.02 D = 0.05 D = 0.0 D DC = 0.20 D = Average Forward Current - I F(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current (per leg) Fig. 6 - Forward Power Loss Characteristics (per leg) trr ( ns ) Vr = 200V Tj = 25 C Tj = 25 C IF = 50A IF = 75A Qrr ( nc ) Vr = 200V Tj = 25 C Tj = 25 C IF = 50A IF = 75A di F /dt (A/µs ) 0 Fig. 7 - Typical Reverse Recovery time vs. di F /dt 0 0 di F /dt (A/µs ) Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: T C = T - (Pd + Pd REV ) x R thc ; Pd = Forward Power Loss = I F(AV) x V (I F(AV) / D) (see Fig. 6); Pd REV = Inverse Power Loss = V R x I R ( - D); I V R = 80% rated V R 4

5 3 V R = 200V 0 IF ta trr t b Q rr 4 L = 70µH 0.0 Ω D.U.T. di f /dt 2 I RRM 0.75 I RRM 0.5 I RRM di(rec)m/dt 5 dif/dt ADUST G D S IRFP250. dif/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. t rr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Q rr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 0 - Reverse Recovery Waveform and Definitions SOT-227 Package Details LEAD ASSIGNMENTS FRED Notes:. Dimensioning & tolerancing per ANSI Y4.5M Controlling dimension: millimeter. 3. Dimensions are shown in millimeters (inches). 5

6 SOT-227 Package Details Tube QUANTITY PER TUBE IS 0 M4 SCREW AND WASHER INCLUDED Ordering Information Table Device Code UF B 200 F A ULTRAFAST RECTIFIER 2 - Ultrafast Pt diffused 3 - Current Rating (200 = 200A) 4 - Circuit Configuration (2 separate Diodes, parallel pin-out) 5 - Package Indicator (SOT-227 Standard Isolated Base) 6 - Voltage Rating (40 = 400V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. 0/02 6