Ultrafast Rectifier, 30 A FRED Pt TM

Transcription

1 Base common cathode 2 FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 75 C operating junction temperature Lead (Pb)-free ( PbF suffix) Designed and qualified for industrial level Pb-free Available RoHS* COMPLIANT TO-247AC modified PRODUCT SUMMARY t rr (AV) V R 3 Cathode Anode 55 ns 30 A 300 V DESCRIPTION/APPLICATIONS 300 V series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V RRM 300 V Average rectified forward current (AV) T C = 43 C 30 Non-repetitive peak surge current SM 300 A Operating junction and storage temperatures, T Stg - 65 to 75 C ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 0 µa = 30 A Forward voltage V F = 30 A, V R = V R rated Reverse leakage current I R, V R = V R rated µa Junction capacitance C T V R = 300 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 9407 For technical questions, contact: diodes-tech@vishay.com Revision: 07-Apr-08

2 DYNAMIC RECOVERY CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time t rr ns =.0 A, d /dt = 50 A/µs, V R = 30 V Peak recovery current I RRM T = 30 A J d /dt = A/µs V R = 200 V A Reverse recovery charge Q rr nc THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range, T Stg C Thermal resistance, junction to case per leg R thjc Thermal resistance, junction to ambient Thermal resistance, case to heatsink Weight Mounting torque R thja Typical socket mount R thcs Mounting surface, flat, smooth and greased C/W g oz. Marking device Case style TO-247AC modified 30EPH (5.0) - 2 () kgf cm (lbf in) For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 07-Apr-08

3 Instantaneous Forward Current (A) 0 = 75 C I R - Reverse Current (µa) = 75 C = 50 C = 0 C V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 00 C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) Single pulse (thermal resistance) D = 0.50 D = 0.20 t D = 0. t 2 D = 0.05 D = 0.02 Notes: D = 0.0. Duty factor D = t /t Peak = P DM x Z thjc + T C P DM. t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Document Number: 9407 For technical questions, contact: diodes-tech@vishay.com Revision: 07-Apr-08 3

4 80 0 Allowable Case Temperature ( C) Square wave (D = 0.50) Rated V R applied See note () DC t rr (ns) = 30 A, = 30 A, 0 00 (AV) - Average Forward Current (A) d /dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. d /dt Average Power Loss (W) DC RMS limit D = 0.0 D = 0.02 D = 0.05 D = 0. D = 0.20 D = 0.50 Q rr (nc) 0 = 30 A, = 30 A, (AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 0 00 d /dt (A/µs) Fig. 8 - Typical Stored Charge vs. d /dt Note () Formula used: T C = - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = (AV) x V FM at ((AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = Rated V R For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 07-Apr-08

5 V R = 200 V L = 70 µh 0.0 Ω D.U.T. d /dt adjust G D IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () d /dt () d /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Document Number: 9407 For technical questions, contact: diodes-tech@vishay.com Revision: 07-Apr-08 5

6 ORDERING INFORMATION TABLE Device code 30 E P H 03 PbF Current rating (30 = 30A) 2 - Circuit configuration: E = Single diode 3 - Package: P = TO-247AC modified 4 - H = Hyperfast recovery 5 - Voltage rating (03 = 300V) 6 - None = Standard production PbF = Lead (Pb)-free Tube standard pack quantity: 25 pieces Dimensions Part marking information LINKS TO RELATED DOCUMENTS For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 07-Apr-08

7 Legal Disclaimer Notice Vishay Notice The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier s Power Control Systems (PCS) business, which closed in April Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below. Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. International Rectifier, IR, the IR logo, HEXFET, HEXSense, HEXDIP, DOL, INTERO, and POWIRTRAIN are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners. Document Number: Revision: 2-Mar-07