Hyperfast Rectifier, 8 A FRED Pt TM

Transcription

1 Base cathode 2 FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Lead (Pb)-free ( PbF suffix) Designed and qualified for industrial level Pb-free Available RoHS* COMPLIANT TO-220AC PRODUCT SUMMARY t rr (AV) V R 1 3 Cathode Anode 35 ns 8 A 300 V DESCRIPTION/APPLICATIONS 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Repetitive peak reverse voltage V RRM 300 V Average rectified forward current (AV) T C = 155 C 8 Non-repetitive peak surge current SM T C 0 A Operating junction and storage temperatures, T Stg - 65 to 175 C ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = 0 µa = 8 A Forward voltage V F = 8 A, V R = V R rated Reverse leakage current I R, V R = V R rated µa Junction capacitance C T V R = 300 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: For technical questions, contact: diodes-tech@vishay.com Revision: 08-Apr-08 1

2 DYNAMIC RECOVERY CHARACTERISTICS (T C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time t rr ns = 1 A, d /dt = - 50 A/µs, V R = 30 V Peak recovery current I RRM T = 8 A J d /dt = A/µs V R = 200 V A Reverse recovery charge Q rr nc THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range, T Stg C Thermal resistance, junction to case per leg R thjc Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque R thja Typical socket mount R thcs Mounting surface, flat, smooth and greased C/W g oz. Marking device Case style TO-220AC 8ETH (5.0) - 12 () kgf cm (lbf in) For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 08-Apr-08

3 Instantaneous Forward Current (A) = 175 C I R - Reverse Current (µa) = 175 C = 150 C = 0 C V F - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics V R - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 1 D = D = 0.20 D = 0. t 2 D = 0.05 Notes: Single pulse D = Duty factor D = t 1 /t 2. (thermal resistance) D = Peak = P DM x Z thjc + T C t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM t 1. Document Number: For technical questions, contact: diodes-tech@vishay.com Revision: 08-Apr-08 3

4 180 0 Allowable Case Temperature ( C) Square wave (D = 0.50) Rated V R applied See note (1) DC t rr (ns) = 8 A, = 8 A, 0 00 (AV) - Average Forward Current (A) d /dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. d /dt 00 Average Power Loss (W) DC RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0. D = 0.20 D = 0.50 Q rr (nc) 0 = 8 A, = 8 A, (AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 0 00 d /dt (A/µs) Fig. 8 - Typical Stored Charge vs. d /dt Note (1) Formula used: T C = - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = (AV) x V FM at ((AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = Rated V R For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 08-Apr-08

5 V R = 200 V L = 70 µh 0.01 Ω D.U.T. d /dt adjust G D IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) d /dt (1) d /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Document Number: For technical questions, contact: diodes-tech@vishay.com Revision: 08-Apr-08 5

6 ORDERING INFORMATION TABLE Device code 8 E T H 03 PbF Current rating (8 = 8 A) 2 - E = Single diode 3 - Package: T = TO H = Hyperfast recovery 5 - Voltage rating (03 = 300 V) 6 - None = Standard production PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces Dimensions Part marking information LINKS TO RELATED DOCUMENTS For technical questions, contact: diodes-tech@vishay.com Document Number: Revision: 08-Apr-08

7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: Revision: 18-Jul-08 1