Hyperfast Rectifier, 15 A FRED Pt

Transcription

1 VS-ETX506S-M3, VS-ETX506--M3 Hyperfast Rectifier, 5 FRED Pt FETURES TO-263 (D 2 PK) ase cathode 2 TO Hyperfast recovery time, extremely low Q rr Low forward voltage drop 75 C operating junction temperature Low leakage current Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see N/C node N/C node VS-ETX506S-M3 VS-ETX506--M3 PRODUCT SUMMRY Package TO-263 (D 2 PK), TO-262 I F(V) 5 V R 600 V V F at I F.55 V t rr (typ.) 8 ns T J max. 75 C Diode variation Single die DESCRIPTION / PPLICTIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recover time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC oost stage in the C/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS MX. UNITS Repetitive peak reverse voltage V RRM 600 V verage rectified forward current I F(V) T C = 27 C 5 Non-repetitive peak surge current I FSM T C = 25 C 20 Operating junction and storage temperatures T J, T Stg -65 to +75 C ELECTRICL SPECIFICTIONS (T J = 25 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS reakdown voltage, blocking voltage V R, V R I R = 0 μ I F = Forward voltage V F I F = 5, T J = 50 C V R = V R rated Reverse leakage current I R T J = 50 C, V R = V R rated μ Junction capacitance C T V R = 600 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V Revision: 09-Jul-5 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

2 VS-ETX506S-M3, VS-ETX506--M3 DYNMIC RECOVERY CHRCTERISTICS (T J = 25 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS I F =, di F /dt = 0 /μs, V R = 30 V Reverse recovery time t rr I F = 5, di F /dt = 0 /μs, V R = 30 V T J = 25 C ns T J = 25 C Peak recovery current I RRM T J = 25 C I F = di F /dt = 200 /μs T J = 25 C V R = 390 V T J = 25 C Reverse recovery charge Q rr T J = 25 C nc Reverse recovery time t rr I F = ns Peak recovery current I RRM T J = 25 C di F /dt = 800 /μs Reverse recovery charge Q rr V R = 390 V nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg C Thermal resistance, junction to case R thjc C/W Thermal resistance, junction to ambient R thj Typical socket mount Thermal resistance, case to heatsink Weight Mounting torque Marking device R thcs Mounting surface, flat, smooth and greased Case style D 2 PK Case style TO g oz. 6 (5) - 2 () ETX506S ETX506- kgf cm (lbf in) Instantaneous Forward Current () I F - 0 T J = 75 C T J = 25 C T J = 50 C Reverse Current - I R (μ) C 50 C 25 C 0 C 75 C 50 C 25 C V FM - Forward Voltage Drop (V) Fig. - Typical Forward Voltage Drop Characteristics Reverse Voltage - V R (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 09-Jul-5 2 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

3 VS-ETX506S-M3, VS-ETX506--M3 0 Junction Capacitance - C T (pf) Reverse Voltage - V R (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) D = 0.5 D = 0.2 D = 0. D = 0.05 D = 0.02 D = 0.0 Single Pulse (Thermal Resistance) E-05 E-04 E-03 E-02 E-0 E+00 t - Rectangular Pulse Duration (s) Fig. 4 - Max. Thermal Impedance Z thjc Characteristics RMS Limit llowable Case Temperature ( C) DC verage Power Loss (W) D = 0.0 D = 0.02 D = 0.05 D = 0. D = 0.2 D = 0.5 DC verage Forward Current - I F(V) () I F(V) - verage Forward Current () Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 09-Jul-5 3 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

4 VS-ETX506S-M3, VS-ETX506--M I F = 5, 25 C t rr (ns) Q rr (nc) I F = 5, 25 C 25 I F = 5, 25 C 20 5 typical value I F = 5, 25 C 50 typical value di F dt (/μs) di F dt (/μs) Fig. 7 - Typical Reverse Recovery vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt V R = 200 V 0.0 Ω L = 70 μh D.U.T. di F /dt adjust G D IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 I F t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 09-Jul-5 4 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

5 VS-ETX506S-M3, VS-ETX506--M3 ORDERING INFORMTION TLE Device code VS- E T X 5 06 S TRL -M product 2 - Circuit configuration E = single diode 3 - T = TO X = hyperfast recovery time 5 - Current code (5 = 5 ) 6 - Voltage code (06 = 600 V) 7 - S = D 2 PK - - = TO None = tube (50 pieces) - TRL = tape and reel (left oriented, for D 2 PK package) - TRR = tape and reel (right oriented, for D 2 PK package) 9 - -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER TUE MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-ETX506S-M ntistatic plastic tube VS-ETX506--M ntistatic plastic tube VS-ETX506STRR-M " diameter reel VS-ETX506STRL-M " diameter reel LINKS TO RELTED DOCUMENTS Dimensions TO-263 (D 2 PK) TO Part marking information TO-263 (D 2 PK) TO Packaging information TO-263 (D 2 PK) Revision: 09-Jul-5 5 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

6 DIMENSIONS in millimeters and inches D 2 PK Outline Dimensions Conforms to JEDEC outline D 2 PK (SMD-220) (3) L (2)(3) E 4 c2 (E) (D) (3) Pad layout.00 MIN. (0.43) 9.65 MIN. (0.38) D L2 2 x e 2 3 H (2) 2 x b2 2 x b C Detail 0.0 M M c ± M E View - H (3) 7.90 (0.70) 5.00 (0.625) 2.32 MIN. (0.08) Plating 2.64 (0.3) 2.4 (0.096) (4) b, b3 3.8 MIN. (0.5) ase Metal Gauge plane Lead tip 0 to 8 L3 L L4 Detail Rotated 90 CW Scale: 8: Seating plane (c) (b, b2) Section - and C - C Scale: None c (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES D E , 3 b E b e 2.54 SC 0.0 SC b H b L c L c L c L SC 0.0 SC D L Notes () Dimensioning and tolerancing per SME Y4.5 M-994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-263 Revision: 08-Jul-5 Document Number: For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T

7 Outline Dimensions TO-262 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-262 (Datum ) (2) (3) E (3) L c2 E D Seating plane D(3) L2 2 C 3 C L (2) 2 x e 0.0 M M Lead tip 3 x b2 3 x b c Lead assignments Diodes. - node (two die)/open (one die) 2., 4. - Cathode 3. - node Plating c E Section - (4) ase b, b3 metal (b, b2) (3) c (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES b b b b c c c D D E , 3 E e 2.54 SC 0.0 SC L L L Notes () Dimensioning and tolerancing as per SME Y4.5M-994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.27 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-262 except (maximum), b (minimum) and D (minimum) where dimensions derived the actual package outline Document Number: 9549 For technical questions within your region, please contact one of the following: Revision: 04-Oct- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com

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