Ultrafast Soft Recovery Diode, 60 A FRED Pt

Transcription

1 60EPU06PbF 60APU06PbF FEATURES Ultrafast recovery 175 C operating junction temperature Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level Cathode to base Cathode Anode TO-247AC modified PRODUCT SUMMARY t rr (typical) (AV) V R Cathode to base Anode Anode TO-247AC 34 ns 60 A 600 V BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V R 600 V Continuous forward current (AV) T C = 116 C 60 Single pulse forward current SM T C 600 A Maximum repetitive forward current RM Square wave, 20 khz 120 Operating junction and storage temperatures, T Stg - 55 to 175 C ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μa Forward voltage V F = 60 A, = 125 C = 60 A V = 60 A, = 175 C V R = V R rated Reverse leakage current I R = 150 C, V R = V R rated μa Junction capacitance C T V R = 600 V pf * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: For technical questions, contact: diodestech@vishay.com Revision: 09-Dec-09 1

2 DYNAMIC RECOVERY CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time t rr ns = 1 A, d /dt = 200 A/μs, V R = 30 V = 125 C Peak recovery current I RRM T = 60 A J d /dt = 200 A/μs = 125 C V R = 200 V A Reverse recovery charge Q rr = 125 C nc THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, R thjc junction to case K/W Thermal resistance, Mounting surface, flat, smooth R thcs case to heatsink and greased Weight Mounting torque Marking device Case style TO-247AC modified Case style TO-247AC g oz. 1.2 () - 60EPU06 60APU (20) N m (lbf in) For technical questions, contact: diodestech@vishay.com Document Number: Revision: 09-Dec-09

3 0 0 - Instantaneous Forward Current (A) = 175 C = 125 C I R - Reverse Current (µa) = 175 C = 125 C V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 0 C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) τ 1 Ci = τi/ri R 1 R 2 R 3 τ 2 τ 3 t on - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics T C Ri ( C/W) τi (s) Notes: 1. Duty factor D = t on /period 2. Peak = P DM x Z thjc + T C Document Number: For technical questions, contact: diodestech@vishay.com Revision: 09-Dec-09 3

4 Allowable Case Temperature ( C) DC Square wave (D = 0.50) 80 % rated V R applied 80 See note (1) t rr (ns) = 125 C = 30 A = 60 A 0 (AV) - Average Forward Current (A) d /dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. d /dt Average Power Loss (W) DC RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0. D = 0.20 D = 0.50 Q rr (nc) = 125 C = 30 A = 60 A (AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 0 0 d /dt (A/µs) Fig. 8 - Typical Stored Charge vs. d /dt Note (1) Formula used: T C = - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = (AV) x V FM at ((AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = 80 % rated V R For technical questions, contact: diodestech@vishay.com Document Number: Revision: 09-Dec-09

5 V R = 200 V L = 70 µh 0.01 Ω D.U.T. d /dt adjust G D IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 t a tb (2) I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) d /dt (1) d /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Document Number: For technical questions, contact: diodestech@vishay.com Revision: 09-Dec-09 5

6 ORDERING INFORMATION TABLE Device code 60 E P U 06 PbF Current rating (60 = 60 A) 2 - Circuit configuration: E = Single diode A = Single diode, 3 pins 3 - Package: P = TO-247AC (modified) 4 - Type of silicon: U = Ultrafast recovery 5 - Voltage rating (06 = 600 V) 6 - None = Standard production PbF = Lead (Pb)-free Dimensions Part marking information LINKS TO RELATED DOCUMENTS TO-247AC modified TO-247AC TO-247AC modified TO-247AC For technical questions, contact: diodestech@vishay.com Document Number: Revision: 09-Dec-09

7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 90 Revision: 18-Jul-08 1