Hyperfast Rectifier, 30 A FRED Pt

Transcription

1 VS-3ETH6FP-F3, VS-3ETH6FP-N3 Hyperfast Rectifier, 3 A FRED Pt FEATURES 2 TO-22 FullPAK 3 Cathode Base cathode 2 3 Anode Reduced Q rr and soft recovery 75 C T J maximum For PFC CRM/CCM operation Fully isolated package (V INS = 25 V RMS ) UL E78996 approved Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance please see Available PRIMARY CHARACTERISTICS Package TO-22 FullPAK I F(AV) 3 A V R 6 V V F at I F.34 V t rr (typ.) 23 ns T J max. 75 C Circuit configuration Single DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V RRM 6 V Average rectified forward current I F(AV) T C = 37 C 3 Non-repetitive peak surge current I FSM 22 A Operating junction and storage temperatures T J, T Stg -65 to +75 C ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR, V R I R = μa I F = 3 A Forward voltage V F I F = 3 A, T J = 5 C V R = V R rated Reverse leakage current I R T J = 5 C, V R = V R rated μa Junction capacitance C T V R = 6 V pf Series inductance L S Measured lead to lead 5 mm from package body nh V Revision: 27-Oct-7 Document Number: 9343 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 VS-3ETH6FP-F3, VS-3ETH6FP-N3 DYNAMIC RECOVERY CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I F = A, di F /dt = 5 A/μs, V R = 3 V Reverse recovery time t rr I F = A, di F /dt = A/μs, V R = 3 V ns T J = 25 C Peak recovery current I RRM I F = 3 A di F /dt = 2 A/μs T J = 25 C V R = 2 V A Reverse recovery charge Q rr T J = 25 C nc THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T J, T Stg C Thermal resistance, junction-to-case per leg R thjc Thermal resistance, junction-to-ambient per leg R thja Typical socket mount C/W Thermal resistance, case-to-heatsink Weight Mounting torque R thcs Mounting surface, flat, smooth and greased g oz. Marking device Case style TO-22 FullPAK 3ETH6FP 6 (5) - 2 () kgf cm (lbf in) I F - Instantaneous Forward Current (A) T J = 75 C T J = 5 C I R - Reverse Current (ma)... T J = 75 C T J = 5 C T J = 25 C T J = C V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) 6 Fig. - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 27-Oct-7 2 Document Number: 9343 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 VS-3ETH6FP-F3, VS-3ETH6FP-N3 C T - Junction Capacitance (pf) V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W). Single pulse (thermal resistance) D =.5 D =.2 D =. D =.5 D =.2 D = t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics Allowable Case Temperature ( C) Square wave (D =.5) Rated V R applied See note () DC Average Power Loss (W) DC RMS limit D =. D =.2 D =.5 D =. D =.2 D = I F(AV) - Average Forward Current (A) I F(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 27-Oct-7 3 Document Number: 9343 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 VS-3ETH6FP-F3, VS-3ETH6FP-N I F = 3 A I F = 5 A 2 V R = 2 V T J = 25 C t rr (ns) Q rr (nc) 8 6 I F = 3 A I F = 5 A V R = 2 V T J = 25 C di F /dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. di F /dt 2 di F /dt (A/µs) Fig. 8 - Typical Stored Charge vs. di F /dt Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(AV) x V FM at (I F(AV) /D) (see fig. 6); Pd REV = Inverse power loss = V R x I R ( - D); I R at V R = Rated V R (3) t rr I F t a tb (2) I RRM (4) Q rr.5 I RRM di (rec)m /dt (5).75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through.75 I RRM and.5 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = 2 (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 27-Oct-7 4 Document Number: 9343 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 VS-3ETH6FP-F3, VS-3ETH6FP-N3 ORDERING INFORMATION TABLE Device code VS- 3 E T H 6 FP -F product 2 - Current rating (3 A) 3 - E = single 4 - T = TO H = hyperfast recovery 6 - Voltage rating (6 = 6 V) 7 - TO-22 FullPAK 8 - Environmental digit: -F3 = RoHS-compliant and totally lead (Pb)-free -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-3ETH6FP-F3 5 Antistatic plastic tube VS-3ETH6FP-N3 5 Antistatic plastic tube Dimensions Part marking information SPICE model LINKS TO RELATED DOCUMENTS Revision: 27-Oct-7 5 Document Number: 9343 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 Outline Dimensions DIMENSIONS in millimeters.6.4 Hole Ø R.7 (2 places) R TYP TYP Lead assignments Diodes Cathode 3 - Anode TYP. 5 ±.5 5 ±.5 Conforms to JEDEC outline TO-22 FULL-PAK Revision: 2-Jul- Document Number: 955 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

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